《美丽教师在线 意大利》电影完整版免费播放 - 5G影院《美丽教师在线观看》全集电影在线观看-苍南电影网
当然，我们也不能忽视其他因素对财运的影响。比如个人的努力程度、家庭背景、社会环境等等。但是，从生肖和出生月份的角度来看，二月虎和十月虎在财运上的确存在着明显的差异。这也许是命运的一种安排吧！
2024年12月12日，生完孩子后的李丽娟并没有完全清醒过来。她的眼神依旧呆滞，只能无声地躺在病床上，张着嘴巴，仿佛在无声地诉说着什么。高昂的住院费用如同一座大山，压得这个家庭喘不过气来。经过深思熟虑，李丽娟的父母不得不做出一个艰难的决定：将她接回家中继续照顾。
《美丽教师在线 意大利》电影完整版免费播放 - 5G影院《美丽教师在线观看》全集电影在线观看-苍南电影网
原创2024-07-12 10:09·每日经济新闻
我们的生活虽平凡，却充满了爱与温暖。瘦归瘦，但佟丽娅看上去一点也不干瘪。
7测耻别9谤颈，产辞锄丑耻蔼驳补辞箩颈补苍濒颈肠丑别苍驳蝉丑辞耻箩颈诲补辞濒颈补辞测颈濒颈补苍驳丑耻苍锄丑耻补苍驳测辞耻驳耻补苍肠丑别诲别肠丑别辫补颈丑补辞，飞别颈“箩颈贰5476奥”，濒颈测辞苍驳诲颈苍驳飞别颈辫颈苍驳迟补颈肠丑补虫耻苍肠丑耻濒颈补辞驳补颈丑耻辞肠丑别虫颈苍驳肠丑别驳耻颈箩颈。箩颈别尘颈补苍虫颈苍飞别苍锄颈测别苍别颈谤别苍蝉丑颈肠丑耻诲别诲补辞濒颈补辞诲耻颈锄丑别濒别颈办补颈测耻补苍辫颈苍驳迟补颈驳耻颈箩颈锄丑耻苍辩耻别虫颈苍驳诲别辩耻别谤别苍。驳补颈丑耻辞肠丑别产补苍苍颈补苍苍别颈测颈箩颈苍驳锄补颈产耻迟辞苍驳诲别蝉丑颈测辞苍驳测辞耻肠丑补苍驳箩颈补丑别尘别颈锄丑颈测辞耻肠丑补苍驳箩颈补锄丑颈箩颈补苍肠丑耻补苍蝉耻辞测耻苍蝉丑耻，辩颈锄丑辞苍驳产补辞办耻辞濒颈补辞锄丑颈尘颈苍驳辫颈苍辫补颈箩颈苍濒辞苍驳测耻丑别箩颈苍濒辞苍驳测耻辩颈虫颈补诲别测颈丑补颈箩颈补濒颈。7测耻别10谤颈，箩耻诲颈测颈肠补颈箩颈苍驳，箩颈苍濒辞苍驳测耻蹿补苍驳尘颈补苍诲耻颈丑耻辞肠丑别驳耻颈箩颈测颈蝉丑颈锄耻辞肠丑耻丑耻颈测颈苍驳，产颈补辞蝉丑颈驳补颈肠丑别锄别苍驳锄补颈箩颈迟耻补苍辩颈虫颈补飞耻丑补苍、蝉丑补苍虫颈驳辞苍驳肠丑补苍驳虫颈别丑耻辞，箩颈耻肠颈迟别产颈别蝉丑耻辞尘颈苍驳。驳耻颈尘辞丑耻补测颈苍驳测辞苍驳肠丑颈虫耻迟耻颈箩颈苍
3号(贬补辞)线(齿颈补苍):鸡(闯颈)鸣(惭颈苍驳)寺(厂颈)，夫(贵耻)子(窜颈)庙(惭颈补辞)，秦(蚕颈苍)淮(贬耻补颈)河(贬别)，科(碍别)举(闯耻)博(叠辞)物(奥耻)馆(骋耻补苍)，老(尝补辞)门(惭别苍)东(顿辞苍驳)，南(狈补苍)京(闯颈苍驳)科(碍别)技(闯颈)馆(骋耻补苍)、大(顿补)行(齿颈苍驳)宫(骋辞苍驳)、九(闯颈耻)龙(尝辞苍驳)湖(贬耻)、鸡(闯颈)鸣(惭颈苍驳)寺(厂颈)、武(奥耻)定(顿颈苍驳)门(惭别苍)。
辩耻苍颈补苍3测耻别，尘别颈驳耻辞锄辞苍驳迟辞苍驳产补颈诲别苍驳箩颈肠丑耻尘别颈驳耻辞蝉丑颈蝉丑补苍驳锄耻颈诲补驳耻颈尘辞诲别1.8测颈迟辞苍驳蝉丑颈测辞耻肠丑耻产别颈蝉丑颈蹿补苍驳，测颈锄补颈别飞耻肠丑辞苍驳迟耻产补辞蹿补、测辞耻箩颈补锄耻辞蝉丑别苍驳锄丑颈尘别颈迟辞苍驳肠丑补辞驳耻辞100尘别颈测耻补苍锄丑颈箩颈，箩颈补苍驳诲颈测辞耻箩颈补。尘别颈驳耻辞锄丑别苍驳蹿耻箩颈苍箩颈蝉丑颈蹿补苍驳诲别锄丑补苍濒耻别蝉丑颈测辞耻肠丑耻产别颈箩颈补驳别飞别颈尘别颈迟辞苍驳测耻别96尘别颈测耻补苍。丑别锄补颈7谤别苍“箩颈”濒颈补辞11谤别苍，锄颈产辞驳补辞辩颈苍驳箩颈补辞箩颈苍驳肠丑补丑耻辞测颈辩颈尘颈补苍产补辞肠丑别肠丑补辞测耻补苍飞别颈蹿补虫颈苍驳飞别颈
收(Shou)藏(Cang)｜半(Ban)导(Dao)体(Ti)一(Yi)些(Xie)术(Shu)语(Yu)的(De)中(Zhong)英(Ying)文(Wen)对(Dui)照(Zhao)2018-12-03 04:20·芯(Xin)榜(Bang)芯(Xin) 片(Pian) 圈(Quan)芯(Xin)片(Pian)半(Ban)导(Dao)体(Ti)人(Ren)的(De)圈(Quan)子(Zi)！100000+关(Guan)注(Zhu)精(Jing)彩(Cai)推(Tui)荐(Jian)来(Lai)源(Yuan)：ittbank常(Chang)用(Yong)半(Ban)导(Dao)体(Ti)中(Zhong)英(Ying)对(Dui)照(Zhao)表(Biao)常(Chang)用(Yong)的(De)离(Li)子(Zi)注(Zhu)入(Ru)机(Ji)：ion implanterLSS理(Li)论(Lun)：Lindhand Scharff and Schiott theory，又(You)称(Cheng)“林(Lin)汉(Han)德(De)-斯(Si)卡(Ka)夫(Fu)-斯(Si)高(Gao)特(Te)理(Li)论(Lun)”。沟(Gou)道(Dao)效(Xiao)应(Ying)：channeling effect射(She)程(Cheng)分(Fen)布(Bu)：range distribution深(Shen)度(Du)分(Fen)布(Bu)：depth distribution投(Tou)影(Ying)射(She)程(Cheng)：projected range阻(Zu)止(Zhi)距(Ju)离(Li)：stopping distance阻(Zu)止(Zhi)本(Ben)领(Ling)：stopping power标(Biao)准(Zhun)阻(Zu)止(Zhi)截(Jie)面(Mian)：standard stopping cross section退(Tui)火(Huo)：annealing激(Ji)活(Huo)能(Neng)：activation energy等(Deng)温(Wen)退(Tui)火(Huo)：isothermal annealing激(Ji)光(Guang)退(Tui)火(Huo)：laser annealing应(Ying)力(Li)感(Gan)生(Sheng)缺(Que)陷(Xian)：stress-induced defect择(Ze)优(You)取(Qu)向(Xiang)：preferred orientation制(Zhi)版(Ban)工(Gong)艺(Yi)：mask-making technology图(Tu)形(Xing)畸(Ji)变(Bian)：pattern distortion初(Chu)缩(Suo)：first minification精(Jing)缩(Suo)：final minification母(Mu)版(Ban)：master mask铬(Ge)版(Ban)：chromium plate干(Gan)版(Ban)：dry plate乳(Ru)胶(Jiao)版(Ban)：emulsion plate透(Tou)明(Ming)版(Ban)：see-through plate高(Gao)分(Fen)辨(Bian)率(Lv)版(Ban)：high resolution plate, HRP超(Chao)微(Wei)粒(Li)干(Gan)版(Ban)：plate forultra-microminiaturization掩(Yan)模(Mo)：mask掩(Yan)模(Mo)对(Dui)准(Zhun)：mask alignment对(Dui)准(Zhun)精(Jing)度(Du)：alignment precision光(Guang)刻(Ke)胶(Jiao)：photoresist，又(You)称(Cheng)“光(Guang)致(Zhi)抗(Kang)蚀(Shi)剂(Ji)”。负(Fu)性(Xing)光(Guang)刻(Ke)胶(Jiao)：negative photoresist正(Zheng)性(Xing)光(Guang)刻(Ke)胶(Jiao)：positive photoresist无(Wu)机(Ji)光(Guang)刻(Ke)胶(Jiao)：inorganic resist多(Duo)层(Ceng)光(Guang)刻(Ke)胶(Jiao)：multilevel resist电(Dian)子(Zi)束(Shu)光(Guang)刻(Ke)胶(Jiao)：electron beam resistX射(She)线(Xian)光(Guang)刻(Ke)胶(Jiao)：X-ray resist刷(Shua)洗(Xi)：scrubbing甩(Shuai)胶(Jiao)：spinning涂(Tu)胶(Jiao)：photoresist coating后(Hou)烘(Hong)：postbaking光(Guang)刻(Ke)：photolithographyX射(She)线(Xian)光(Guang)刻(Ke)：X-ray lithography电(Dian)子(Zi)束(Shu)光(Guang)刻(Ke)：electron beam lithography离(Li)子(Zi)束(Shu)光(Guang)刻(Ke)：ion beam lithography深(Shen)紫(Zi)外(Wai)光(Guang)刻(Ke)：deep-UV lithography光(Guang)刻(Ke)机(Ji)：mask aligner投(Tou)影(Ying)光(Guang)刻(Ke)机(Ji)：projection mask aligner曝(Pu)光(Guang)：exposure接(Jie)触(Chu)式(Shi)曝(Pu)光(Guang)法(Fa)：contact exposure method接(Jie)近(Jin)式(Shi)曝(Pu)光(Guang)法(Fa)：proximity exposure method光(Guang)学(Xue)投(Tou)影(Ying)曝(Pu)光(Guang)法(Fa)：optical projection exposure method电(Dian)子(Zi)束(Shu)曝(Pu)光(Guang)系(Xi)统(Tong)：electron beam exposure system分(Fen)步(Bu)重(Zhong)复(Fu)系(Xi)统(Tong)：step-and-repeat system显(Xian)影(Ying)：development线(Xian)宽(Kuan)：linewidth去(Qu)胶(Jiao)：stripping of photoresist氧(Yang)化(Hua)去(Qu)胶(Jiao)：removing of photoresist by oxidation等(Deng)离(Li)子(Zi)［体(Ti)］去(Qu)胶(Jiao)：removing of photoresist by plasma刻(Ke)蚀(Shi)：etching干(Gan)法(Fa)刻(Ke)蚀(Shi)：dry etching反(Fan)应(Ying)离(Li)子(Zi)刻(Ke)蚀(Shi)：reactive ion etching,：RIE各(Ge)向(Xiang)同(Tong)性(Xing)刻(Ke)蚀(Shi)：isotropic etching各(Ge)向(Xiang)异(Yi)性(Xing)刻(Ke)蚀(Shi)：anisotropic etching反(Fan)应(Ying)溅(Jian)射(She)刻(Ke)蚀(Shi)：reactive sputter etching离(Li)子(Zi)铣(Xi)：ion beam milling，又(You)称(Cheng)“离(Li)子(Zi)磨(Mo)削(Xiao)”。等(Deng)离(Li)子(Zi)［体(Ti)］刻(Ke)蚀(Shi)：plasma etching钻(Zuan)蚀(Shi)：undercutting剥(Bao)离(Li)技(Ji)术(Shu)：lift-off technology，又(You)称(Cheng)“浮(Fu)脱(Tuo)工(Gong)艺(Yi)”。终(Zhong)点(Dian)监(Jian)测(Ce)：endpoint monitoring金(Jin)属(Shu)化(Hua)：metallization互(Hu)连(Lian)：interconnection多(Duo)层(Ceng)金(Jin)属(Shu)化(Hua)：multilevel metallization电(Dian)迁(Qian)徙(Zuo)：electromigration回(Hui)流(Liu)：reflow磷(Lin)硅(Gui)玻(Bo)璃(Li)：phosphorosilicate glass硼(Peng)磷(Lin)硅(Gui)玻(Bo)璃(Li)：boron-phosphorosilicate glass钝(Dun)化(Hua)工(Gong)艺(Yi)：passivation technology多(Duo)层(Ceng)介(Jie)质(Zhi)钝(Dun)化(Hua)：multilayer dielectric passivation划(Hua)片(Pian)：scribing电(Dian)子(Zi)束(Shu)切(Qie)片(Pian)：electron beam slicing烧(Shao)结(Jie)：sintering印(Yin)压(Ya)：indentation热(Re)压(Ya)焊(Han)：thermocompression bonding热(Re)超(Chao)声(Sheng)焊(Han)：thermosonic bonding冷(Leng)焊(Han)：cold welding点(Dian)焊(Han)：spot welding球(Qiu)焊(Han)：ball bonding楔(Xie)焊(Han)：wedge bonding内(Nei)引(Yin)线(Xian)焊(Han)接(Jie)：inner lead bonding外(Wai)引(Yin)线(Xian)焊(Han)接(Jie)：outer lead bonding梁(Liang)式(Shi)引(Yin)线(Xian)：beam lead装(Zhuang)架(Jia)工(Gong)艺(Yi)：mounting technology附(Fu)着(Zhuo)：adhesion封(Feng)装(Zhuang)：packaging金(Jin)属(Shu)封(Feng)装(Zhuang)：metallic packaging陶(Tao)瓷(Ci)封(Feng)装(Zhuang)：ceramic packaging扁(Bian)平(Ping)封(Feng)装(Zhuang)：flat packaging塑(Su)封(Feng)：plastic package玻(Bo)璃(Li)封(Feng)装(Zhuang)：glass packaging微(Wei)封(Feng)装(Zhuang)：micropackaging，又(You)称(Cheng)“微(Wei)组(Zu)装(Zhuang)”。管(Guan)壳(Ke)：package管(Guan)芯(Xin)：die引(Yin)线(Xian)键(Jian)合(He)：lead bonding引(Yin)线(Xian)框(Kuang)式(Shi)键(Jian)合(He)：lead frame bonding带(Dai)式(Shi)自(Zi)动(Dong)键(Jian)合(He)：tape automated bonding, TAB激(Ji)光(Guang)键(Jian)合(He)：laser bonding超(Chao)声(Sheng)键(Jian)合(He)：ultrasonic bonding红(Hong)外(Wai)键(Jian)合(He)：infrared bonding微(Wei)电(Dian)子(Zi)辞(Ci)典(Dian)大(Da)集(Ji)合(He)（按(An)首(Shou)字(Zi)母(Mu)顺(Shun)序(Xu)排(Pai)序(Xu)）AAbrupt junction 突(Tu)变(Bian)结(Jie)Accelerated testing 加(Jia)速(Su)实(Shi)验(Yan)Acceptor 受(Shou)主(Zhu)Acceptor atom 受(Shou)主(Zhu)原(Yuan)子(Zi)Accumulation 积(Ji)累(Lei)、堆(Dui)积(Ji)Accumulating contact 积(Ji)累(Lei)接(Jie)触(Chu)Accumulation region 积(Ji)累(Lei)区(Qu)Accumulation layer 积(Ji)累(Lei)层(Ceng)Active region 有(You)源(Yuan)区(Qu)Active component 有(You)源(Yuan)元(Yuan)Active device 有(You)源(Yuan)器(Qi)件(Jian)Activation 激(Ji)活(Huo)Activation energy 激(Ji)活(Huo)能(Neng)Active region 有(You)源(Yuan)（放(Fang)大(Da)）区(Qu)Admittance 导(Dao)纳(Na)Allowed band 允(Yun)带(Dai)Alloy-junction device合(He)金(Jin)结(Jie)器(Qi)件(Jian) Aluminum(Aluminium) 铝(Lv)Aluminum – oxide 铝(Lv)氧(Yang)化(Hua)物(Wu)Aluminum passivation 铝(Lv)钝(Dun)化(Hua)Ambipolar 双(Shuang)极(Ji)的(De)Ambient temperature 环(Huan)境(Jing)温(Wen)度(Du)Amorphous 无(Wu)定(Ding)形(Xing)的(De)，非(Fei)晶(Jing)体(Ti)的(De)Amplifier 功(Gong)放(Fang) 扩(Kuo)音(Yin)器(Qi) 放(Fang)大(Da)器(Qi)Analogue(Analog) comparator 模(Mo)拟(Ni)比(Bi)较(Jiao)器(Qi) Angstrom 埃(Ai)Anneal 退(Tui)火(Huo)Anisotropic 各(Ge)向(Xiang)异(Yi)性(Xing)的(De)Anode 阳(Yang)极(Ji)Arsenic (AS) 砷(Shen)Auger 俄(E)歇(Xie)Auger process 俄(E)歇(Xie)过(Guo)程(Cheng)Avalanche 雪(Xue)崩(Beng)Avalanche breakdown 雪(Xue)崩(Beng)击(Ji)穿(Chuan)Avalanche excitation雪(Xue)崩(Beng)激(Ji)发(Fa)BBackground carrier 本(Ben)底(Di)载(Zai)流(Liu)子(Zi)Background doping 本(Ben)底(Di)掺(Chan)杂(Za)Backward 反(Fan)向(Xiang)Backward bias 反(Fan)向(Xiang)偏(Pian)置(Zhi)Ballasting resistor 整(Zheng)流(Liu)电(Dian)阻(Zu)Ball bond 球(Qiu)形(Xing)键(Jian)合(He)Band gap 能(Neng)带(Dai)间(Jian)隙(Xi)Barrier 势(Shi)垒(Lei)Barrier layer 势(Shi)垒(Lei)层(Ceng)Barrier width 势(Shi)垒(Lei)宽(Kuan)度(Du)Base 基(Ji)极(Ji)Base contact 基(Ji)区(Qu)接(Jie)触(Chu)Base stretching 基(Ji)区(Qu)扩(Kuo)展(Zhan)效(Xiao)应(Ying)Base transit time 基(Ji)区(Qu)渡(Du)越(Yue)时(Shi)间(Jian)Base transport efficiency基(Ji)区(Qu)输(Shu)运(Yun)系(Xi)数(Shu)Base-width modulation基(Ji)区(Qu)宽(Kuan)度(Du)调(Diao)制(Zhi)Basis vector 基(Ji)矢(Shi)Bias 偏(Pian)置(Zhi)Bilateral switch 双(Shuang)向(Xiang)开(Kai)关(Guan)Binary code 二(Er)进(Jin)制(Zhi)代(Dai)码(Ma)Binary compound semiconductor 二(Er)元(Yuan)化(Hua)合(He)物(Wu)半(Ban)导(Dao)体(Ti)Bipolar 双(Shuang)极(Ji)性(Xing)的(De)Bipolar Junction Transistor (BJT)双(Shuang)极(Ji)晶(Jing)体(Ti)管(Guan)Bloch 布(Bu)洛(Luo)赫(He)Blocking band 阻(Zu)挡(Dang)能(Neng)带(Dai)Blocking contact 阻(Zu)挡(Dang)接(Jie)触(Chu)Body - centered 体(Ti)心(Xin)立(Li)方(Fang)Body-centred cubic structure 体(Ti)立(Li)心(Xin)结(Jie)构(Gou)Boltzmann 波(Bo)尔(Er)兹(Zi)曼(Man)Bond 键(Jian)、键(Jian)合(He)Bonding electron 价(Jia)电(Dian)子(Zi)Bonding pad 键(Jian)合(He)点(Dian)Bootstrap circuit 自(Zi)举(Ju)电(Dian)路(Lu)Bootstrapped emitter follower 自(Zi)举(Ju)射(She)极(Ji)跟(Gen)随(Sui)器(Qi)Boron 硼(Peng)Borosilicate glass 硼(Peng)硅(Gui)玻(Bo)璃(Li)Boundary condition 边(Bian)界(Jie)条(Tiao)件(Jian)Bound electron 束(Shu)缚(Fu)电(Dian)子(Zi)Breadboard 模(Mo)拟(Ni)板(Ban)、实(Shi)验(Yan)板(Ban)Break down 击(Ji)穿(Chuan)Break over 转(Zhuan)折(Zhe)Brillouin 布(Bu)里(Li)渊(Yuan)Brillouin zone 布(Bu)里(Li)渊(Yuan)区(Qu)Built-in 内(Nei)建(Jian)的(De)Build-in electric field 内(Nei)建(Jian)电(Dian)场(Chang)Bulk 体(Ti)/体(Ti)内(Nei) Bulk absorption 体(Ti)吸(Xi)收(Shou)Bulk generation 体(Ti)产(Chan)生(Sheng)Bulk recombination 体(Ti)复(Fu)合(He)Burn - in 老(Lao)化(Hua)Burn out 烧(Shao)毁(Hui)Buried channel 埋(Mai)沟(Gou)Buried diffusion region 隐(Yin)埋(Mai)扩(Kuo)散(San)区(Qu)CCan 外(Wai)壳(Ke)Capacitance 电(Dian)容(Rong)Capture cross section 俘(Fu)获(Huo)截(Jie)面(Mian)Capture carrier 俘(Fu)获(Huo)载(Zai)流(Liu)子(Zi)Carrier 载(Zai)流(Liu)子(Zi)、载(Zai)波(Bo)Carry bit 进(Jin)位(Wei)位(Wei)Carry-in bit 进(Jin)位(Wei)输(Shu)入(Ru)Carry-out bit 进(Jin)位(Wei)输(Shu)出(Chu)Cascade 级(Ji)联(Lian)Case 管(Guan)壳(Ke)Cathode 阴(Yin)极(Ji)Center 中(Zhong)心(Xin)Ceramic 陶(Tao)瓷(Ci)（的(De)）Channel 沟(Gou)道(Dao)Channel breakdown 沟(Gou)道(Dao)击(Ji)穿(Chuan)Channel current 沟(Gou)道(Dao)电(Dian)流(Liu)Channel doping 沟(Gou)道(Dao)掺(Chan)杂(Za)Channel shortening 沟(Gou)道(Dao)缩(Suo)短(Duan)Channel width 沟(Gou)道(Dao)宽(Kuan)度(Du)Characteristic impedance 特(Te)征(Zheng)阻(Zu)抗(Kang)Charge 电(Dian)荷(He)、充(Chong)电(Dian)Charge-compensation effects 电(Dian)荷(He)补(Bu)偿(Chang)效(Xiao)应(Ying)Charge conservation 电(Dian)荷(He)守(Shou)恒(Heng)Charge neutrality condition 电(Dian)中(Zhong)性(Xing)条(Tiao)件(Jian)Chargedrive/exchange/sharing/transfer/storage 电(Dian)荷(He)驱(Qu)动(Dong)/交(Jiao)换(Huan)/共(Gong)享(Xiang)/转(Zhuan)移(Yi)/存(Cun)储(Chu)Chemmical etching 化(Hua)学(Xue)腐(Fu)蚀(Shi)法(Fa)Chemically-Polish 化(Hua)学(Xue)抛(Pao)光(Guang)Chemmically-Mechanically Polish (CMP) 化(Hua)学(Xue)机(Ji)械(Xie)抛(Pao)光(Guang) Chip 芯(Xin)片(Pian)Chip yield 芯(Xin)片(Pian)成(Cheng)品(Pin)率(Lv)Clamped 箝(Zuo)位(Wei)Clamping diode 箝(Zuo)位(Wei)二(Er)极(Ji)管(Guan)Cleavage plane 解(Jie)理(Li)面(Mian)Clock rate 时(Shi)钟(Zhong)频(Pin)率(Lv)Clock generator 时(Shi)钟(Zhong)发(Fa)生(Sheng)器(Qi)Clock flip-flop 时(Shi)钟(Zhong)触(Chu)发(Fa)器(Qi)Close-packed structure 密(Mi)堆(Dui)积(Ji)结(Jie)构(Gou)Close-loop gain 闭(Bi)环(Huan)增(Zeng)益(Yi)Collector 集(Ji)电(Dian)极(Ji)Collision 碰(Peng)撞(Zhuang)Compensated OP-AMP 补(Bu)偿(Chang)运(Yun)放(Fang)Common-base/collector/emitter connection 共(Gong)基(Ji)极(Ji)/集(Ji)电(Dian)极(Ji)/发(Fa)射(She)极(Ji)连(Lian)接(Jie)Common-gate/drain/source connection 共(Gong)栅(Zha)/漏(Lou)/源(Yuan)连(Lian)接(Jie)Common-mode gain 共(Gong)模(Mo)增(Zeng)益(Yi)Common-mode input 共(Gong)模(Mo)输(Shu)入(Ru)Common-mode rejection ratio (CMRR) 共(Gong)模(Mo)抑(Yi)制(Zhi)比(Bi)Compatibility 兼(Jian)容(Rong)性(Xing)Compensation 补(Bu)偿(Chang)Compensated impurities 补(Bu)偿(Chang)杂(Za)质(Zhi)Compensated semiconductor 补(Bu)偿(Chang)半(Ban)导(Dao)体(Ti)Complementary Darlington circuit 互(Hu)补(Bu)达(Da)林(Lin)顿(Dun)电(Dian)路(Lu)Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS) 互(Hu)补(Bu)金(Jin)属(Shu)氧(Yang)化(Hua)物(Wu)半(Ban)导(Dao)体(Ti)场(Chang)效(Xiao)应(Ying)晶(Jing)体(Ti)管(Guan)Complementary error function 余(Yu)误(Wu)差(Cha)函(Han)数(Shu)Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 计(Ji)算(Suan)机(Ji)辅(Fu)助(Zhu)设(She)计(Ji)/ 测(Ce)试(Shi) /制(Zhi) 造(Zao)Compound Semiconductor 化(Hua)合(He)物(Wu)半(Ban)导(Dao)体(Ti)Conductance 电(Dian)导(Dao)Conduction band (edge) 导(Dao)带(Dai)(底(Di))Conduction level/state 导(Dao)带(Dai)态(Tai)Conductor 导(Dao)体(Ti)Conductivity 电(Dian)导(Dao)率(Lv)Configuration 组(Zu)态(Tai)Conlomb 库(Ku)仑(Lun)Conpled Configuration Devices 结(Jie)构(Gou)组(Zu)态(Tai)Constants 物(Wu)理(Li)常(Chang)数(Shu)Constant energy surface 等(Deng)能(Neng)面(Mian)Constant-source diffusion恒(Heng)定(Ding)源(Yuan)扩(Kuo)散(San)Contact 接(Jie)触(Chu)Contamination 治(Zhi)污(Wu)Continuity equation 连(Lian)续(Xu)性(Xing)方(Fang)程(Cheng)Contact hole 接(Jie)触(Chu)孔(Kong)Contact potential 接(Jie)触(Chu)电(Dian)势(Shi)Continuity condition 连(Lian)续(Xu)性(Xing)条(Tiao)件(Jian)Contra doping 反(Fan)掺(Chan)杂(Za)Controlled 受(Shou)控(Kong)的(De)Converter 转(Zhuan)换(Huan)器(Qi)Conveyer 传(Chuan)输(Shu)器(Qi)Copper interconnection system 铜(Tong)互(Hu)连(Lian)系(Xi)统(Tong)Couping 耦(Zuo)合(He)Covalent 共(Gong)阶(Jie)的(De)Crossover 跨(Kua)交(Jiao)Critical 临(Lin)界(Jie)的(De)Crossunder 穿(Chuan)交(Jiao)Crucible坩(Zuo)埚(Zuo)Crystaldefect/face/orientation/lattice 晶(Jing)体(Ti)缺(Que)陷(Xian)/晶(Jing)面(Mian)/晶(Jing)向(Xiang)/晶(Jing)格(Ge)Current density 电(Dian)流(Liu)密(Mi)度(Du)Curvature 曲(Qu)率(Lv)Cut off 截(Jie)止(Zhi)Current drift/dirve/sharing 电(Dian)流(Liu)漂(Piao)移(Yi)/驱(Qu)动(Dong)/共(Gong)享(Xiang)Current Sense 电(Dian)流(Liu)取(Qu)样(Yang)Curvature 弯(Wan)曲(Qu)Custom integrated circuit 定(Ding)制(Zhi)集(Ji)成(Cheng)电(Dian)路(Lu)Cylindrical 柱(Zhu)面(Mian)的(De)Czochralshicrystal 直(Zhi)立(Li)单(Dan)晶(Jing)Czochralski technique 切(Qie)克(Ke)劳(Lao)斯(Si)基(Ji)技(Ji)术(Shu)（Cz法(Fa)直(Zhi)拉(La)晶(Jing)体(Ti)J）DDangling bonds 悬(Xuan)挂(Gua)键(Jian)Dark current 暗(An)电(Dian)流(Liu)Dead time 空(Kong)载(Zai)时(Shi)间(Jian)Debye length 德(De)拜(Bai)长(Chang)度(Du)De.broglie 德(De)布(Bu)洛(Luo)意(Yi)Decderate 减(Jian)速(Su)Decibel (dB) 分(Fen)贝(Bei)Decode 译(Yi)码(Ma)Deep acceptor level 深(Shen)受(Shou)主(Zhu)能(Neng)级(Ji)Deep donor level 深(Shen)施(Shi)主(Zhu)能(Neng)级(Ji)Deep impurity level 深(Shen)度(Du)杂(Za)质(Zhi)能(Neng)级(Ji)Deep trap 深(Shen)陷(Xian)阱(Zuo)Defeat 缺(Que)陷(Xian)Degenerate semiconductor 简(Jian)并(Bing)半(Ban)导(Dao)体(Ti)Degeneracy 简(Jian)并(Bing)度(Du)Degradation 退(Tui)化(Hua)Degree Celsius(centigrade) /Kelvin 摄(She)氏(Shi)/开(Kai)氏(Shi)温(Wen)度(Du)Delay 延(Yan)迟(Chi) Density 密(Mi)度(Du)Density of states 态(Tai)密(Mi)度(Du)Depletion 耗(Hao)尽(Jin)Depletion approximation 耗(Hao)尽(Jin)近(Jin)似(Si)Depletion contact 耗(Hao)尽(Jin)接(Jie)触(Chu)Depletion depth 耗(Hao)尽(Jin)深(Shen)度(Du)Depletion effect 耗(Hao)尽(Jin)效(Xiao)应(Ying)Depletion layer 耗(Hao)尽(Jin)层(Ceng)Depletion MOS 耗(Hao)尽(Jin)MOSDepletion region 耗(Hao)尽(Jin)区(Qu)Deposited film 淀(Dian)积(Ji)薄(Bao)膜(Mo)Deposition process 淀(Dian)积(Ji)工(Gong)艺(Yi)Design rules 设(She)计(Ji)规(Gui)则(Ze)Die 芯(Xin)片(Pian)（复(Fu)数(Shu)dice）Diode 二(Er)极(Ji)管(Guan)Dielectric 介(Jie)电(Dian)的(De)Dielectric isolation 介(Jie)质(Zhi)隔(Ge)离(Li)Difference-mode input 差(Cha)模(Mo)输(Shu)入(Ru)Differential amplifier 差(Cha)分(Fen)放(Fang)大(Da)器(Qi)Differential capacitance 微(Wei)分(Fen)电(Dian)容(Rong)Diffused junction 扩(Kuo)散(San)结(Jie)Diffusion 扩(Kuo)散(San)Diffusion coefficient 扩(Kuo)散(San)系(Xi)数(Shu)Diffusion constant 扩(Kuo)散(San)常(Chang)数(Shu)Diffusivity 扩(Kuo)散(San)率(Lv)Diffusioncapacitance/barrier/current/furnace 扩(Kuo)散(San)电(Dian)容(Rong)/势(Shi)垒(Lei)/电(Dian)流(Liu)/炉(Lu)Digital circuit 数(Shu)字(Zi)电(Dian)路(Lu)Dipole domain 偶(Ou)极(Ji)畴(Chou)Dipole layer 偶(Ou)极(Ji)层(Ceng)Direct-coupling 直(Zhi)接(Jie)耦(Zuo)合(He)Direct-gap semiconductor 直(Zhi)接(Jie)带(Dai)隙(Xi)半(Ban)导(Dao)体(Ti)Direct transition 直(Zhi)接(Jie)跃(Yue)迁(Qian)Discharge 放(Fang)电(Dian)Discrete component 分(Fen)立(Li)元(Yuan)件(Jian)Dissipation 耗(Hao)散(San)Distribution 分(Fen)布(Bu)Distributed capacitance 分(Fen)布(Bu)电(Dian)容(Rong)Distributed model 分(Fen)布(Bu)模(Mo)型(Xing)Displacement 位(Wei)移(Yi) Dislocation 位(Wei)错(Cuo)Domain 畴(Chou) Donor 施(Shi)主(Zhu)Donor exhaustion 施(Shi)主(Zhu)耗(Hao)尽(Jin)Dopant 掺(Chan)杂(Za)剂(Ji)Doped semiconductor 掺(Chan)杂(Za)半(Ban)导(Dao)体(Ti)Doping concentration 掺(Chan)杂(Za)浓(Nong)度(Du)Double-diffusive MOS(DMOS)双(Shuang)扩(Kuo)散(San)MOS.Drift 漂(Piao)移(Yi) Drift field 漂(Piao)移(Yi)电(Dian)场(Chang)Drift mobility 迁(Qian)移(Yi)率(Lv)Dry etching 干(Gan)法(Fa)腐(Fu)蚀(Shi)Dry/wet oxidation 干(Gan)/湿(Shi)法(Fa)氧(Yang)化(Hua)Dose 剂(Ji)量(Liang)Duty cycle 工(Gong)作(Zuo)周(Zhou)期(Qi)Dual-in-line package （DIP） 双(Shuang)列(Lie)直(Zhi)插(Cha)式(Shi)封(Feng)装(Zhuang)Dynamics 动(Dong)态(Tai)Dynamic characteristics 动(Dong)态(Tai)属(Shu)性(Xing)Dynamic impedance 动(Dong)态(Tai)阻(Zu)抗(Kang)EEarly effect 厄(E)利(Li)效(Xiao)应(Ying)Early failure 早(Zao)期(Qi)失(Shi)效(Xiao)Effective mass 有(You)效(Xiao)质(Zhi)量(Liang)Einstein relation(ship) 爱(Ai)因(Yin)斯(Si)坦(Tan)关(Guan)系(Xi)Electric Erase Programmable Read Only Memory(E2PROM) 一(Yi)次(Ci)性(Xing)电(Dian)可(Ke)擦(Ba)除(Chu)只(Zhi)读(Du)存(Cun)储(Chu)器(Qi)Electrode 电(Dian)极(Ji)Electrominggratim 电(Dian)迁(Qian)移(Yi)Electron affinity 电(Dian)子(Zi)亲(Qin)和(He)势(Shi)Electronic -grade 电(Dian)子(Zi)能(Neng)Electron-beam photo-resist exposure 光(Guang)致(Zhi)抗(Kang)蚀(Shi)剂(Ji)的(De)电(Dian)子(Zi)束(Shu)曝(Pu)光(Guang)Electron gas 电(Dian)子(Zi)气(Qi)Electron-grade water 电(Dian)子(Zi)级(Ji)纯(Chun)水(Shui)Electron trapping center 电(Dian)子(Zi)俘(Fu)获(Huo)中(Zhong)心(Xin)Electron Volt (eV) 电(Dian)子(Zi)伏(Fu)Electrostatic 静(Jing)电(Dian)的(De)Element 元(Yuan)素(Su)/元(Yuan)件(Jian)/配(Pei)件(Jian)Elemental semiconductor 元(Yuan)素(Su)半(Ban)导(Dao)体(Ti)Ellipse 椭(Tuo)圆(Yuan)Ellipsoid 椭(Tuo)球(Qiu)Emitter 发(Fa)射(She)极(Ji)Emitter-coupled logic 发(Fa)射(She)极(Ji)耦(Zuo)合(He)逻(Luo)辑(Ji)Emitter-coupled pair 发(Fa)射(She)极(Ji)耦(Zuo)合(He)对(Dui)Emitter follower 射(She)随(Sui)器(Qi)Empty band 空(Kong)带(Dai)Emitter crowding effect 发(Fa)射(She)极(Ji)集(Ji)边(Bian)（拥(Yong)挤(Ji)）效(Xiao)应(Ying)Endurance test =life test 寿(Shou)命(Ming)测(Ce)试(Shi)Energy state 能(Neng)态(Tai)Energy momentum diagram 能(Neng)量(Liang)-动(Dong)量(Liang)(E-K)图(Tu)Enhancement mode 增(Zeng)强(Qiang)型(Xing)模(Mo)式(Shi)Enhancement MOS 增(Zeng)强(Qiang)性(Xing)MOS Entefic (低(Di))共(Gong)溶(Rong)的(De)Environmental test 环(Huan)境(Jing)测(Ce)试(Shi)Epitaxial 外(Wai)延(Yan)的(De)Epitaxial layer 外(Wai)延(Yan)层(Ceng)Epitaxial slice 外(Wai)延(Yan)片(Pian)Expitaxy 外(Wai)延(Yan)Equivalent curcuit 等(Deng)效(Xiao)电(Dian)路(Lu)Equilibrium majority /minority carriers 平(Ping)衡(Heng)多(Duo)数(Shu)/少(Shao)数(Shu)载(Zai)流(Liu)子(Zi)Erasable Programmable ROM (EPROM)可(Ke)搽(Cha)取(Qu)（编(Bian)程(Cheng)）存(Cun)储(Chu)器(Qi)Error function complement 余(Yu)误(Wu)差(Cha)函(Han)数(Shu)Etch 刻(Ke)蚀(Shi)Etchant 刻(Ke)蚀(Shi)剂(Ji)Etching mask 抗(Kang)蚀(Shi)剂(Ji)掩(Yan)模(Mo)Excess carrier 过(Guo)剩(Sheng)载(Zai)流(Liu)子(Zi)Excitation energy 激(Ji)发(Fa)能(Neng)Excited state 激(Ji)发(Fa)态(Tai)Exciton 激(Ji)子(Zi)Extrapolation 外(Wai)推(Tui)法(Fa)Extrinsic 非(Fei)本(Ben)征(Zheng)的(De)Extrinsic semiconductor 杂(Za)质(Zhi)半(Ban)导(Dao)体(Ti)FFace - centered 面(Mian)心(Xin)立(Li)方(Fang)Fall time 下(Xia)降(Jiang)时(Shi)间(Jian)Fan-in 扇(Shan)入(Ru)Fan-out 扇(Shan)出(Chu)Fast recovery 快(Kuai)恢(Hui)复(Fu)Fast surface states 快(Kuai)界(Jie)面(Mian)态(Tai)Feedback 反(Fan)馈(Kui)Fermi level 费(Fei)米(Mi)能(Neng)级(Ji)Fermi-Dirac Distribution 费(Fei)米(Mi)-狄(Di)拉(La)克(Ke)分(Fen)布(Bu)Femi potential 费(Fei)米(Mi)势(Shi)Fick equation 菲(Fei)克(Ke)方(Fang)程(Cheng)（扩(Kuo)散(San)）Field effect transistor 场(Chang)效(Xiao)应(Ying)晶(Jing)体(Ti)管(Guan)Field oxide 场(Chang)氧(Yang)化(Hua)层(Ceng)Filled band 满(Man)带(Dai)Film 薄(Bao)膜(Mo)Flash memory 闪(Shan)烁(Shuo)存(Cun)储(Chu)器(Qi)Flat band 平(Ping)带(Dai)Flat pack 扁(Bian)平(Ping)封(Feng)装(Zhuang)Flicker noise 闪(Shan)烁(Shuo)（变(Bian)）噪(Zao)声(Sheng)Flip-flop toggle 触(Chu)发(Fa)器(Qi)翻(Fan)转(Zhuan)Floating gate 浮(Fu)栅(Zha)Fluoride etch 氟(Fu)化(Hua)氢(Qing)刻(Ke)蚀(Shi)Forbidden band 禁(Jin)带(Dai)Forward bias 正(Zheng)向(Xiang)偏(Pian)置(Zhi)Forward blocking /conducting正(Zheng)向(Xiang)阻(Zu)断(Duan)/导(Dao)通(Tong)Frequency deviation noise频(Pin)率(Lv)漂(Piao)移(Yi)噪(Zao)声(Sheng)Frequency response 频(Pin)率(Lv)响(Xiang)应(Ying)Function 函(Han)数(Shu)GGain 增(Zeng)益(Yi) Gallium-Arsenide(GaAs) 砷(Shen)化(Hua)钾(Jia)Gamy ray r 射(She)线(Xian)Gate 门(Men)、栅(Zha)、控(Kong)制(Zhi)极(Ji)Gate oxide 栅(Zha)氧(Yang)化(Hua)层(Ceng)Gauss（ian） 高(Gao)斯(Si)Gaussian distribution profile 高(Gao)斯(Si)掺(Chan)杂(Za)分(Fen)布(Bu)Generation-recombination 产(Chan)生(Sheng)-复(Fu)合(He)Geometries 几(Ji)何(He)尺(Chi)寸(Cun)Germanium(Ge) 锗(Zhe)Graded 缓(Huan)变(Bian)的(De)Graded (gradual) channel 缓(Huan)变(Bian)沟(Gou)道(Dao)Graded junction 缓(Huan)变(Bian)结(Jie)Grain 晶(Jing)粒(Li)Gradient 梯(Ti)度(Du)Grown junction 生(Sheng)长(Chang)结(Jie)Guard ring 保(Bao)护(Hu)环(Huan)Gummel-Poom model 葛(Ge)谋(Mou)-潘(Pan) 模(Mo)型(Xing)Gunn - effect 狄(Di)氏(Shi)效(Xiao)应(Ying)HHardened device 辐(Fu)射(She)加(Jia)固(Gu)器(Qi)件(Jian)Heat of formation 形(Xing)成(Cheng)热(Re)Heat sink 散(San)热(Re)器(Qi)、热(Re)沉(Chen)Heavy/light hole band 重(Zhong)/轻(Qing) 空(Kong)穴(Xue)带(Dai)Heavy saturation 重(Zhong)掺(Chan)杂(Za)Hell - effect 霍(Huo)尔(Er)效(Xiao)应(Ying)Heterojunction 异(Yi)质(Zhi)结(Jie)Heterojunction structure 异(Yi)质(Zhi)结(Jie)结(Jie)构(Gou)Heterojunction Bipolar Transistor（HBT）异(Yi)质(Zhi)结(Jie)双(Shuang)极(Ji)型(Xing)晶(Jing)体(Ti)High field property 高(Gao)场(Chang)特(Te)性(Xing)High-performance MOS.( H-MOS)高(Gao)性(Xing)能(Neng)MOS. Hormalized 归(Gui)一(Yi)化(Hua)Horizontal epitaxial reactor 卧(Wo)式(Shi)外(Wai)延(Yan)反(Fan)应(Ying)器(Qi)Hot carrior 热(Re)载(Zai)流(Liu)子(Zi)Hybrid integration 混(Hun)合(He)集(Ji)成(Cheng)IImage - force 镜(Jing)象(Xiang)力(Li)Impact ionization 碰(Peng)撞(Zhuang)电(Dian)离(Li)Impedance 阻(Zu)抗(Kang)Imperfect structure 不(Bu)完(Wan)整(Zheng)结(Jie)构(Gou)Implantation dose 注(Zhu)入(Ru)剂(Ji)量(Liang)Implanted ion 注(Zhu)入(Ru)离(Li)子(Zi)Impurity 杂(Za)质(Zhi)Impurity scattering 杂(Za)志(Zhi)散(San)射(She)Incremental resistance 电(Dian)阻(Zu)增(Zeng)量(Liang)（微(Wei)分(Fen)电(Dian)阻(Zu)）In-contact mask 接(Jie)触(Chu)式(Shi)掩(Yan)模(Mo)Indium tin oxide (ITO) 铟(Zuo)锡(Xi)氧(Yang)化(Hua)物(Wu)Induced channel 感(Gan)应(Ying)沟(Gou)道(Dao)Infrared 红(Hong)外(Wai)的(De)Injection 注(Zhu)入(Ru)Input offset voltage 输(Shu)入(Ru)失(Shi)调(Diao)电(Dian)压(Ya)Insulator 绝(Jue)缘(Yuan)体(Ti)Insulated Gate FET(IGFET)绝(Jue)缘(Yuan)栅(Zha)FET Integrated injection logic集(Ji)成(Cheng)注(Zhu)入(Ru)逻(Luo)辑(Ji)Integration 集(Ji)成(Cheng)、积(Ji)分(Fen)Interconnection 互(Hu)连(Lian)Interconnection time delay 互(Hu)连(Lian)延(Yan)时(Shi)Interdigitated structure 交(Jiao)互(Hu)式(Shi)结(Jie)构(Gou)Interface 界(Jie)面(Mian)Interference 干(Gan)涉(She)International system of unions国(Guo)际(Ji)单(Dan)位(Wei)制(Zhi)Internally scattering 谷(Gu)间(Jian)散(San)射(She)Interpolation 内(Nei)插(Cha)法(Fa)Intrinsic 本(Ben)征(Zheng)的(De)Intrinsic semiconductor 本(Ben)征(Zheng)半(Ban)导(Dao)体(Ti)Inverse operation 反(Fan)向(Xiang)工(Gong)作(Zuo)Inversion 反(Fan)型(Xing)Inverter 倒(Dao)相(Xiang)器(Qi)Ion 离(Li)子(Zi)Ion beam 离(Li)子(Zi)束(Shu)Ion etching 离(Li)子(Zi)刻(Ke)蚀(Shi)Ion implantation 离(Li)子(Zi)注(Zhu)入(Ru)Ionization 电(Dian)离(Li)Ionization energy 电(Dian)离(Li)能(Neng)Irradiation 辐(Fu)照(Zhao)Isolation land 隔(Ge)离(Li)岛(Dao)Isotropic 各(Ge)向(Xiang)同(Tong)性(Xing)JJunction FET(JFET) 结(Jie)型(Xing)场(Chang)效(Xiao)应(Ying)管(Guan)Junction isolation 结(Jie)隔(Ge)离(Li)Junction spacing 结(Jie)间(Jian)距(Ju)Junction side-wall 结(Jie)侧(Ce)壁(Bi)LLatch up 闭(Bi)锁(Suo)Lateral 横(Heng)向(Xiang)的(De)Lattice 晶(Jing)格(Ge)Layout 版(Ban)图(Tu)Latticebinding/cell/constant/defect/distortion 晶(Jing)格(Ge)结(Jie)合(He)力(Li)/晶(Jing)胞(Bao)/晶(Jing)格(Ge)/晶(Jing)格(Ge)常(Chang)熟(Shu)/晶(Jing)格(Ge)缺(Que)陷(Xian)/晶(Jing)格(Ge)畸(Ji)变(Bian)Leakage current （泄(Xie)）漏(Lou)电(Dian)流(Liu)Level shifting 电(Dian)平(Ping)移(Yi)动(Dong)Life time 寿(Shou)命(Ming)linearity 线(Xian)性(Xing)度(Du)Linked bond 共(Gong)价(Jia)键(Jian)Liquid Nitrogen 液(Ye)氮(Dan)Liquid－phase epitaxial growth technique 液(Ye)相(Xiang)外(Wai)延(Yan)生(Sheng)长(Chang)技(Ji)术(Shu)Lithography 光(Guang)刻(Ke)Light Emitting Diode(LED) 发(Fa)光(Guang)二(Er)极(Ji)管(Guan)Load line or Variable 负(Fu)载(Zai)线(Xian)Locating and Wiring 布(Bu)局(Ju)布(Bu)线(Xian)Longitudinal 纵(Zong)向(Xiang)的(De)Logic swing 逻(Luo)辑(Ji)摆(Bai)幅(Fu)Lorentz 洛(Luo)沦(Lun)兹(Zi)Lumped model 集(Ji)总(Zong)模(Mo)型(Xing)MMajority carrier 多(Duo)数(Shu)载(Zai)流(Liu)子(Zi)Mask 掩(Yan)膜(Mo)板(Ban)，光(Guang)刻(Ke)板(Ban)Mask level 掩(Yan)模(Mo)序(Xu)号(Hao)Mask set 掩(Yan)模(Mo)组(Zu)Mass - action law质(Zhi)量(Liang)守(Shou)恒(Heng)定(Ding)律(Lv)Master-slave D flip-flop主(Zhu)从(Cong)D触(Chu)发(Fa)器(Qi)Matching 匹(Pi)配(Pei)Maxwell 麦(Mai)克(Ke)斯(Si)韦(Wei)Mean free path 平(Ping)均(Jun)自(Zi)由(You)程(Cheng)Meandered emitter junction梳(Shu)状(Zhuang)发(Fa)射(She)极(Ji)结(Jie)Mean time before failure (MTBF) 平(Ping)均(Jun)工(Gong)作(Zuo)时(Shi)间(Jian)Megeto - resistance 磁(Ci)阻(Zu)Mesa 台(Tai)面(Mian)MESFET-Metal Semiconductor金(Jin)属(Shu)半(Ban)导(Dao)体(Ti)FETMetallization 金(Jin)属(Shu)化(Hua)Microelectronic technique 微(Wei)电(Dian)子(Zi)技(Ji)术(Shu)Microelectronics 微(Wei)电(Dian)子(Zi)学(Xue)Millen indices 密(Mi)勒(Le)指(Zhi)数(Shu)Minority carrier 少(Shao)数(Shu)载(Zai)流(Liu)子(Zi)Misfit 失(Shi)配(Pei)Mismatching 失(Shi)配(Pei)Mobile ions 可(Ke)动(Dong)离(Li)子(Zi)Mobility 迁(Qian)移(Yi)率(Lv)Module 模(Mo)块(Kuai)Modulate 调(Diao)制(Zhi)Molecular crystal分(Fen)子(Zi)晶(Jing)体(Ti)Monolithic IC 单(Dan)片(Pian)IC MOSFET金(Jin)属(Shu)氧(Yang)化(Hua)物(Wu)半(Ban)导(Dao)体(Ti)场(Chang)效(Xiao)应(Ying)晶(Jing)体(Ti)管(Guan)Mos. Transistor(MOST )MOS. 晶(Jing)体(Ti)管(Guan)Multiplication 倍(Bei)增(Zeng)Modulator 调(Diao)制(Zhi)Multi-chip IC 多(Duo)芯(Xin)片(Pian)ICMulti-chip module(MCM) 多(Duo)芯(Xin)片(Pian)模(Mo)块(Kuai)Multiplication coefficient倍(Bei)增(Zeng)因(Yin)子(Zi)NNaked chip 未(Wei)封(Feng)装(Zhuang)的(De)芯(Xin)片(Pian)（裸(Luo)片(Pian)）Negative feedback 负(Fu)反(Fan)馈(Kui)Negative resistance 负(Fu)阻(Zu)Nesting 套(Tao)刻(Ke)Negative-temperature-coefficient 负(Fu)温(Wen)度(Du)系(Xi)数(Shu)Noise margin 噪(Zao)声(Sheng)容(Rong)限(Xian)Nonequilibrium 非(Fei)平(Ping)衡(Heng)Nonrolatile 非(Fei)挥(Hui)发(Fa)（易(Yi)失(Shi)）性(Xing)Normally off/on 常(Chang)闭(Bi)/开(Kai)Numerical analysis 数(Shu)值(Zhi)分(Fen)析(Xi)OOccupied band 满(Man)带(Dai)Officienay 功(Gong)率(Lv)Offset 偏(Pian)移(Yi)、失(Shi)调(Diao)On standby 待(Dai)命(Ming)状(Zhuang)态(Tai)Ohmic contact 欧(Ou)姆(Mu)接(Jie)触(Chu)Open circuit 开(Kai)路(Lu)Operating point 工(Gong)作(Zuo)点(Dian)Operating bias 工(Gong)作(Zuo)偏(Pian)置(Zhi)Operational amplifier (OPAMP)运(Yun)算(Suan)放(Fang)大(Da)器(Qi)Optical photon =photon 光(Guang)子(Zi)Optical quenching光(Guang)猝(Zuo)灭(Mie)Optical transition 光(Guang)跃(Yue)迁(Qian)Optical-coupled isolator光(Guang)耦(Zuo)合(He)隔(Ge)离(Li)器(Qi)Organic semiconductor有(You)机(Ji)半(Ban)导(Dao)体(Ti)Orientation 晶(Jing)向(Xiang)、定(Ding)向(Xiang)Outline 外(Wai)形(Xing)Out-of-contact mask非(Fei)接(Jie)触(Chu)式(Shi)掩(Yan)模(Mo)Output characteristic 输(Shu)出(Chu)特(Te)性(Xing)Output voltage swing 输(Shu)出(Chu)电(Dian)压(Ya)摆(Bai)幅(Fu)Overcompensation 过(Guo)补(Bu)偿(Chang)Over-current protection 过(Guo)流(Liu)保(Bao)护(Hu)Over shoot 过(Guo)冲(Chong)Over-voltage protection 过(Guo)压(Ya)保(Bao)护(Hu)Overlap 交(Jiao)迭(Die)Overload 过(Guo)载(Zai)Oscillator 振(Zhen)荡(Dang)器(Qi)Oxide 氧(Yang)化(Hua)物(Wu)Oxidation 氧(Yang)化(Hua)Oxide passivation 氧(Yang)化(Hua)层(Ceng)钝(Dun)化(Hua)PPackage 封(Feng)装(Zhuang)Pad 压(Ya)焊(Han)点(Dian)Parameter 参(Can)数(Shu)Parasitic effect 寄(Ji)生(Sheng)效(Xiao)应(Ying)Parasitic oscillation 寄(Ji)生(Sheng)振(Zhen)荡(Dang)Passination 钝(Dun)化(Hua)Passive component 无(Wu)源(Yuan)元(Yuan)件(Jian)Passive device 无(Wu)源(Yuan)器(Qi)件(Jian)Passive surface 钝(Dun)化(Hua)界(Jie)面(Mian)Parasitic transistor 寄(Ji)生(Sheng)晶(Jing)体(Ti)管(Guan)Peak-point voltage 峰(Feng)点(Dian)电(Dian)压(Ya)Peak voltage 峰(Feng)值(Zhi)电(Dian)压(Ya)Permanent-storage circuit 永(Yong)久(Jiu)存(Cun)储(Chu)电(Dian)路(Lu)Period 周(Zhou)期(Qi)Periodic table 周(Zhou)期(Qi)表(Biao)Permeable - base 可(Ke)渗(Shen)透(Tou)基(Ji)区(Qu)Phase-lock loop 锁(Suo)相(Xiang)环(Huan)Phase drift 相(Xiang)移(Yi)Phonon spectra 声(Sheng)子(Zi)谱(Pu)Photo conduction 光(Guang)电(Dian)导(Dao)Photo diode 光(Guang)电(Dian)二(Er)极(Ji)管(Guan)Photoelectric cell 光(Guang)电(Dian)池(Chi)Photoelectric effect 光(Guang)电(Dian)效(Xiao)应(Ying)Photoenic devices 光(Guang)子(Zi)器(Qi)件(Jian)Photolithographic process 光(Guang)刻(Ke)工(Gong)艺(Yi)(photo) resist （光(Guang)敏(Min)）抗(Kang)腐(Fu)蚀(Shi)剂(Ji)Pin 管(Guan)脚(Jiao)Pinch off 夹(Jia)断(Duan)Pinning of Fermi level 费(Fei)米(Mi)能(Neng)级(Ji)的(De)钉(Ding)扎(Zha)（效(Xiao)应(Ying)）Planar process 平(Ping)面(Mian)工(Gong)艺(Yi)Planar transistor 平(Ping)面(Mian)晶(Jing)体(Ti)管(Guan)Plasma 等(Deng)离(Li)子(Zi)体(Ti)Plezoelectric effect 压(Ya)电(Dian)效(Xiao)应(Ying)Poisson equation 泊(Bo)松(Song)方(Fang)程(Cheng)Point contact 点(Dian)接(Jie)触(Chu)Polarity 极(Ji)性(Xing)Polycrystal 多(Duo)晶(Jing)Polymer semiconductor聚(Ju)合(He)物(Wu)半(Ban)导(Dao)体(Ti)Poly-silicon 多(Duo)晶(Jing)硅(Gui)Potential (电(Dian))势(Shi)Potential barrier 势(Shi)垒(Lei)Potential well 势(Shi)阱(Zuo)Power dissipation 功(Gong)耗(Hao)Power transistor 功(Gong)率(Lv)晶(Jing)体(Ti)管(Guan)Preamplifier 前(Qian)置(Zhi)放(Fang)大(Da)器(Qi)Primary flat 主(Zhu)平(Ping)面(Mian)Principal axes 主(Zhu)轴(Zhou)Print-circuit board(PCB) 印(Yin)制(Zhi)电(Dian)路(Lu)板(Ban)Probability 几(Ji)率(Lv)Probe 探(Tan)针(Zhen)Process 工(Gong)艺(Yi)Propagation delay 传(Chuan)输(Shu)延(Yan)时(Shi)Pseudopotential method 膺(Zuo)势(Shi)发(Fa)Punch through 穿(Chuan)通(Tong)Pulse triggering/modulating 脉(Mai)冲(Chong)触(Chu)发(Fa)/调(Diao)制(Zhi)PulseWiden Modulator(PWM) 脉(Mai)冲(Chong)宽(Kuan)度(Du)调(Diao)制(Zhi)Punchthrough 穿(Chuan)通(Tong)Push-pull stage 推(Tui)挽(Wan)级(Ji)QQuality factor 品(Pin)质(Zhi)因(Yin)子(Zi)Quantization 量(Liang)子(Zi)化(Hua)Quantum 量(Liang)子(Zi)Quantum efficiency量(Liang)子(Zi)效(Xiao)应(Ying)Quantum mechanics 量(Liang)子(Zi)力(Li)学(Xue)Quasi – Fermi－level准(Zhun)费(Fei)米(Mi)能(Neng)级(Ji)Quartz 石(Shi)英(Ying)RRadiation conductivity 辐(Fu)射(She)电(Dian)导(Dao)率(Lv)Radiation damage 辐(Fu)射(She)损(Sun)伤(Shang)Radiation flux density 辐(Fu)射(She)通(Tong)量(Liang)密(Mi)度(Du)Radiation hardening 辐(Fu)射(She)加(Jia)固(Gu)Radiation protection 辐(Fu)射(She)保(Bao)护(Hu)Radiative - recombination辐(Fu)照(Zhao)复(Fu)合(He)Radioactive 放(Fang)射(She)性(Xing)Reach through 穿(Chuan)通(Tong)Reactive sputtering source 反(Fan)应(Ying)溅(Jian)射(She)源(Yuan)Read diode 里(Li)德(De)二(Er)极(Ji)管(Guan)Recombination 复(Fu)合(He)Recovery diode 恢(Hui)复(Fu)二(Er)极(Ji)管(Guan)Reciprocal lattice 倒(Dao)核(He)子(Zi)Recovery time 恢(Hui)复(Fu)时(Shi)间(Jian)Rectifier 整(Zheng)流(Liu)器(Qi)（管(Guan)）Rectifying contact 整(Zheng)流(Liu)接(Jie)触(Chu)Reference 基(Ji)准(Zhun)点(Dian) 基(Ji)准(Zhun) 参(Can)考(Kao)点(Dian)Refractive index 折(Zhe)射(She)率(Lv)Register 寄(Ji)存(Cun)器(Qi)Registration 对(Dui)准(Zhun)Regulate 控(Kong)制(Zhi) 调(Diao)整(Zheng)Relaxation lifetime 驰(Chi)豫(Yu)时(Shi)间(Jian)Reliability 可(Ke)靠(Kao)性(Xing)Resonance 谐(Xie)振(Zhen)Resistance 电(Dian)阻(Zu)Resistor 电(Dian)阻(Zu)器(Qi)Resistivity 电(Dian)阻(Zu)率(Lv)Regulator 稳(Wen)压(Ya)管(Guan)（器(Qi)）Relaxation 驰(Chi)豫(Yu)Resonant frequency共(Gong)射(She)频(Pin)率(Lv)Response time 响(Xiang)应(Ying)时(Shi)间(Jian)Reverse 反(Fan)向(Xiang)的(De)Reverse bias 反(Fan)向(Xiang)偏(Pian)置(Zhi)SSampling circuit 取(Qu)样(Yang)电(Dian)路(Lu)Sapphire 蓝(Lan)宝(Bao)石(Shi)（Al2O3）Satellite valley 卫(Wei)星(Xing)谷(Gu)Saturated current range电(Dian)流(Liu)饱(Bao)和(He)区(Qu)Saturation region 饱(Bao)和(He)区(Qu)Saturation 饱(Bao)和(He)的(De)Scaled down 按(An)比(Bi)例(Li)缩(Suo)小(Xiao)Scattering 散(San)射(She)Schockley diode 肖(Xiao)克(Ke)莱(Lai)二(Er)极(Ji)管(Guan)Schottky 肖(Xiao)特(Te)基(Ji)Schottky barrier 肖(Xiao)特(Te)基(Ji)势(Shi)垒(Lei)Schottky contact 肖(Xiao)特(Te)基(Ji)接(Jie)触(Chu)Schrodingen 薛(Xue)定(Ding)厄(E)Scribing grid 划(Hua)片(Pian)格(Ge)Secondary flat 次(Ci)平(Ping)面(Mian)Seed crystal 籽(Zi)晶(Jing)Segregation 分(Fen)凝(Ning)Selectivity 选(Xuan)择(Ze)性(Xing)Self aligned 自(Zi)对(Dui)准(Zhun)的(De)Self diffusion 自(Zi)扩(Kuo)散(San)Semiconductor 半(Ban)导(Dao)体(Ti)Semiconductor-controlled rectifier 可(Ke)控(Kong)硅(Gui)Sendsitivity 灵(Ling)敏(Min)度(Du)Serial 串(Chuan)行(Xing)/串(Chuan)联(Lian)Series inductance 串(Chuan)联(Lian)电(Dian)感(Gan)Settle time 建(Jian)立(Li)时(Shi)间(Jian)Sheet resistance 薄(Bao)层(Ceng)电(Dian)阻(Zu)Shield 屏(Ping)蔽(Bi)Short circuit 短(Duan)路(Lu)Shot noise 散(San)粒(Li)噪(Zao)声(Sheng)Shunt 分(Fen)流(Liu)Sidewall capacitance边(Bian)墙(Qiang)电(Dian)容(Rong) Signal 信(Xin)号(Hao)Silica glass 石(Shi)英(Ying)玻(Bo)璃(Li)Silicon 硅(Gui)Silicon carbide 碳(Tan)化(Hua)硅(Gui)Silicon dioxide (SiO2) 二(Er)氧(Yang)化(Hua)硅(Gui)Silicon Nitride(Si3N4) 氮(Dan)化(Hua)硅(Gui)Silicon On Insulator 绝(Jue)缘(Yuan)硅(Gui)Siliver whiskers 银(Yin)须(Xu)Simple cubic 简(Jian)立(Li)方(Fang)Single crystal 单(Dan)晶(Jing)Sink 沉(Chen)Skin effect 趋(Qu)肤(Fu)效(Xiao)应(Ying)Snap time 急(Ji)变(Bian)时(Shi)间(Jian)Sneak path 潜(Qian)行(Xing)通(Tong)路(Lu)Sulethreshold 亚(Ya)阈(Zuo)的(De)Solar battery/cell 太(Tai)阳(Yang)能(Neng)电(Dian)池(Chi)Solid circuit 固(Gu)体(Ti)电(Dian)路(Lu)Solid Solubility 固(Gu)溶(Rong)度(Du)Sonband 子(Zi)带(Dai)Source 源(Yuan)极(Ji)Source follower 源(Yuan)随(Sui)器(Qi)Space charge 空(Kong)间(Jian)电(Dian)荷(He)Specific heat(PT) 热(Re)Speed-power product 速(Su)度(Du)功(Gong)耗(Hao)乘(Cheng)积(Ji) Spherical 球(Qiu)面(Mian)的(De)Spin 自(Zi)旋(Xuan) Split 分(Fen)裂(Lie)Spontaneous emission 自(Zi)发(Fa)发(Fa)射(She)Spreading resistance扩(Kuo)展(Zhan)电(Dian)阻(Zu)Sputter 溅(Jian)射(She) Stacking fault 层(Ceng)错(Cuo)Static characteristic 静(Jing)态(Tai)特(Te)性(Xing)Stimulated emission 受(Shou)激(Ji)发(Fa)射(She)Stimulated recombination 受(Shou)激(Ji)复(Fu)合(He)Storage time 存(Cun)储(Chu)时(Shi)间(Jian)Stress 应(Ying)力(Li)Straggle 偏(Pian)差(Cha)Sublimation 升(Sheng)华(Hua)Substrate 衬(Chen)底(Di)Substitutional 替(Ti)位(Wei)式(Shi)的(De)Superlattice 超(Chao)晶(Jing)格(Ge)Supply 电(Dian)源(Yuan) Surface 表(Biao)面(Mian)Surge capacity 浪(Lang)涌(Yong)能(Neng)力(Li)Subscript 下(Xia)标(Biao)Switching time 开(Kai)关(Guan)时(Shi)间(Jian)Switch 开(Kai)关(Guan)TTailing 扩(Kuo)展(Zhan)Terminal 终(Zhong)端(Duan)Tensor 张(Zhang)量(Liang) Tensorial 张(Zhang)量(Liang)的(De)Thermal activation 热(Re)激(Ji)发(Fa)Thermal conductivity 热(Re)导(Dao)率(Lv)Thermal equilibrium 热(Re)平(Ping)衡(Heng)Thermal Oxidation 热(Re)氧(Yang)化(Hua)Thermal resistance 热(Re)阻(Zu)Thermal sink 热(Re)沉(Chen)Thermal velocity 热(Re)运(Yun)动(Dong)Thermoelectricpovoer 温(Wen)差(Cha)电(Dian)动(Dong)势(Shi)率(Lv)Thick-film technique 厚(Hou)膜(Mo)技(Ji)术(Shu)Thin-film hybrid IC薄(Bao)膜(Mo)混(Hun)合(He)集(Ji)成(Cheng)电(Dian)路(Lu)Thin-Film Transistor(TFT) 薄(Bao)膜(Mo)晶(Jing)体(Ti)Threshlod 阈(Zuo)值(Zhi)Thyistor 晶(Jing)闸(Zha)管(Guan)Transconductance 跨(Kua)导(Dao)Transfer characteristic 转(Zhuan)移(Yi)特(Te)性(Xing)Transfer electron 转(Zhuan)移(Yi)电(Dian)子(Zi)Transfer function 传(Chuan)输(Shu)函(Han)数(Shu) Transient 瞬(Shun)态(Tai)的(De)Transistor aging(stress) 晶(Jing)体(Ti)管(Guan)老(Lao)化(Hua)Transit time 渡(Du)越(Yue)时(Shi)间(Jian)Transition 跃(Yue)迁(Qian)Transition-metal silica 过(Guo)度(Du)金(Jin)属(Shu)硅(Gui)化(Hua)物(Wu)Transition probability 跃(Yue)迁(Qian)几(Ji)率(Lv)Transition region 过(Guo)渡(Du)区(Qu)Transport 输(Shu)运(Yun) Transverse 横(Heng)向(Xiang)的(De)Trap 陷(Xian)阱(Zuo) Trapping 俘(Fu)获(Huo)Trapped charge 陷(Xian)阱(Zuo)电(Dian)荷(He)Triangle generator 三(San)角(Jiao)波(Bo)发(Fa)生(Sheng)器(Qi)Triboelectricity 摩(Mo)擦(Ba)电(Dian)Trigger 触(Chu)发(Fa)Trim 调(Diao)配(Pei) 调(Diao)整(Zheng)Triple diffusion 三(San)重(Zhong)扩(Kuo)散(San)Truth table 真(Zhen)值(Zhi)表(Biao)Tolerahce 容(Rong)差(Cha)Tunnel(ing) 隧(Sui)道(Dao)（穿(Chuan)）Tunnel current 隧(Sui)道(Dao)电(Dian)流(Liu)Turn over 转(Zhuan)折(Zhe)Turn - off time 关(Guan)断(Duan)时(Shi)间(Jian)UUltraviolet 紫(Zi)外(Wai)的(De)Unijunction 单(Dan)结(Jie)的(De)Unipolar 单(Dan)极(Ji)的(De)Unit cell 原(Yuan)（元(Yuan)）胞(Bao)Unity-gain frequency 单(Dan)位(Wei)增(Zeng)益(Yi)频(Pin)率(Lv)Unilateral-switch单(Dan)向(Xiang)开(Kai)关(Guan)VVacancy 空(Kong)位(Wei) Vacuum 真(Zhen)空(Kong)Valence(value) band 价(Jia)带(Dai) Value band edge 价(Jia)带(Dai)顶(Ding)Valence bond 价(Jia)键(Jian) Vapour phase 汽(Qi)相(Xiang)Varactor 变(Bian)容(Rong)管(Guan) Varistor 变(Bian)阻(Zu)器(Qi)Vibration 振(Zhen)动(Dong) Voltage 电(Dian)压(Ya)WWafer 晶(Jing)片(Pian)Wave equation 波(Bo)动(Dong)方(Fang)程(Cheng)Wave guide 波(Bo)导(Dao)Wave number 波(Bo)数(Shu)Wave-particle duality 波(Bo)粒(Li)二(Er)相(Xiang)性(Xing)Wear-out 烧(Shao)毁(Hui)Wire routing 布(Bu)线(Xian)Work function 功(Gong)函(Han)数(Shu)Worst-case device 最(Zui)坏(Huai)情(Qing)况(Kuang)器(Qi)件(Jian)YYield 成(Cheng)品(Pin)率(Lv)ZZener breakdown 齐(Qi)纳(Na)击(Ji)穿(Chuan)Zone melting 区(Qu)熔(Rong)法(Fa)感(Gan)恩(En)赞(Zan)赏(Shang)，为(Wei)中(Zhong)国(Guo)芯(Xin)加(Jia)油(You)！大(Da)家(Jia)怎(Zen)么(Me)看(Kan)？快(Kuai)来(Lai)留(Liu)言(Yan)交(Jiao)流(Liu)吧(Ba)^_^如(Ru)侵(Qin)删(Shan)丨(Zuo)如(Ru)转(Zhuan)注(Zhu)【原(Yuan)创(Chuang)不(Bu)易(Yi)，记(Ji)得(De)转(Zhuan)发(Fa)】半(Ban)导(Dao)体(Ti)人(Ren)临(Lin)走(Zou)记(Ji)得(De)点(Dian)下(Xia)方(Fang)拇(Mu)指(Zhi)留(Liu)下(Xia)脚(Jiao)印(Yin)。如(Ru)觉(Jue)文(Wen)章(Zhang)不(Bu)错(Cuo)，留(Liu)言(Yan)评(Ping)论(Lun)，转(Zhuan)发(Fa)更(Geng)多(Duo)朋(Peng)友(You)，传(Chuan)递(Di)咱(Zan)半(Ban)导(Dao)体(Ti)人(Ren)的(De)观(Guan)点(Dian)。智(Zhi)能(Neng)推(Tui)荐(Jian)：80页(Ye)PPT看(Kan)懂(Dong)半(Ban)导(Dao)体(Ti)行(Xing)业(Ye)一(Yi)颗(Ke)芯(Xin)片(Pian)，咋(Zha)就(Jiu)这(Zhe)么(Me)难(Nan)造(Zao)？ |转(Zhuan)疯(Feng)了(Liao)中(Zhong)国(Guo)半(Ban)导(Dao)体(Ti)困(Kun)境(Jing)！这(Zhe)篇(Pian)讲(Jiang)全(Quan)了(Liao)！中(Zhong)国(Guo)芯(Xin)酸(Suan)往(Wang)事(Shi)！|戴(Dai)老(Lao)板(Ban)制(Zhi)裁(Cai)晋(Jin)华(Hua)背(Bei)后(Hou)：中(Zhong)国(Guo)尚(Shang)未(Wei)掌(Zhang)控(Kong)的(De)核(He)心(Xin)技(Ji)术(Shu)清(Qing)单(Dan)福(Fu)利(Li)下(Xia)载(Zai)：电(Dian)子(Zi)技(Ji)术(Shu)全(Quan)套(Tao)资(Zi)料(Liao)，工(Gong)程(Cheng)师(Shi)必(Bi)看(Kan)！制(Zhi)裁(Cai)晋(Jin)华(Hua)背(Bei)后(Hou)：中(Zhong)国(Guo)尚(Shang)未(Wei)掌(Zhang)控(Kong)的(De)核(He)心(Xin)技(Ji)术(Shu)清(Qing)单(Dan)！这(Zhe)可(Ke)能(Neng)是(Shi)最(Zui)全(Quan)的(De)，中(Zhong)国(Guo)尚(Shang)未(Wei)掌(Zhang)控(Kong)的(De)核(He)心(Xin)技(Ji)术(Shu)清(Qing)单(Dan)（芯(Xin) 榜(Bang)中(Zhong)国(Guo)半(Ban)导(Dao)体(Ti)排(Pai)行(Xing)榜(Bang)！ 添(Tian) 加(Jia)芯(Xin) 片(Pian) 圈(Quan)芯(Xin)片(Pian)半(Ban)导(Dao)体(Ti)人(Ren)的(De)圈(Quan)子(Zi)！添(Tian) 加(Jia)区(Qu)块(Kuai)链(Lian)首(Shou)席(Xi)区(Qu)块(Kuai)链(Lian)从(Cong)入(Ru)门(Men)到(Dao)精(Jing)通(Tong)。在(Zai)这(Zhe)里(Li)，憋(Bie)大(Da)招(Zhao)！添(Tian) 加(Jia)1芯(Xin) 局(Ju)读(Du)懂(Dong)半(Ban)导(Dao)体(Ti)，看(Kan)懂(Dong)芯(Xin)片(Pian)！添(Tian) 加(Jia)1个(Ge)赞(Zan)，工(Gong)资(Zi)老(Lao)板(Ban)加(Jia)1元(Yuan)
科技类ETF基金获关注2024款丰田汉兰达亮相粤港澳大湾区车展《美丽教师在线 意大利》电影完整版免费播放 - 5G影院《美丽教师在线观看》全集电影在线观看-苍南电影网
还需要换一些小配件