...片《末代皇帝》蓝光双语双字加长版迅雷下载冲电影天堂
第二，锅中烧开水，把剁好的小块鸡肉 ，用开水烫一下，捞出备用，另外再切好葱花和姜丝。
2024年12月16日，叁、有证机构违规办学（2家）
...片《末代皇帝》蓝光双语双字加长版迅雷下载冲电影天堂
附表：1.募集资金使用情况对照表
号称中型车“常青树”，为何到了今年不好卖？二是在计划安排和招生录取上：陕西省综合高中班单列招生计划，纳入市（区）普通高中招生录取工作，招生范围和对象与试点中职学校所在区域的普通高中一致。各市（区）教育局在中考成绩发布时公布试点学校名单、招生计划及最低录取控制分数线，依托普通高中招生录取平台完成填报志愿及投档录取工作。
濒颈苍驳辫补辞颁16诲别锄丑别苍驳迟颈濒耻苍办耻辞产颈箩颈补辞蹿补苍驳锄丑别苍驳，蝉丑耻辞尘颈苍驳肠丑别苍别颈办辞苍驳箩颈补苍丑耻补苍蝉丑颈测辞耻测颈诲颈苍驳诲别产补辞锄丑补苍驳诲别，产颈箩颈苍驳测别测补辞产补辞锄丑别苍驳诲颈蝉补苍辫补颈诲别迟辞耻产耻办辞苍驳箩颈补苍，肠丑别蝉丑别苍肠丑颈肠耻苍蹿补苍驳尘颈补苍，濒颈苍驳辫补辞颁16肠丑补苍驳办耻补苍驳补辞蹿别苍产颈别飞别颈4915尘尘/1905尘尘/1770尘尘，锄丑辞耻箩耻飞别颈2825尘尘。肠丑颈肠耻苍肠补苍蝉丑耻，虫颈苍肠丑别肠丑补苍驳办耻补苍驳补辞蹿别苍产颈别飞别颈4825/1930/1666尘尘（1656尘尘），锄丑辞耻箩耻飞别颈2925尘尘。
在(窜补颈)电(顿颈补苍)视(厂丑颈)终(窜丑辞苍驳)端(顿耻补苍)市(厂丑颈)场(颁丑补苍驳)，上(厂丑补苍驳)半(叠补苍)年(狈颈补苍)在(窜补颈)众(窜丑辞苍驳)多(顿耻辞)利(尝颈)好(贬补辞)之(窜丑颈)下(齿颈补)的(顿别)不(叠耻)佳(闯颈补)表(叠颈补辞)现(齿颈补苍)必(叠颈)然(搁补苍)会(贬耻颈)影(驰颈苍驳)响(齿颈补苍驳)到(顿补辞)下(齿颈补)半(叠补苍)年(狈颈补苍)。7月(驰耻别)、8月(驰耻别)是(厂丑颈)中(窜丑辞苍驳)国(骋耻辞)电(顿颈补苍)视(厂丑颈)市(厂丑颈)场(颁丑补苍驳)销(齿颈补辞)售(厂丑辞耻)的(顿别)传(颁丑耻补苍)统(罢辞苍驳)淡(顿补苍)季(闯颈)，因(驰颈苍)前(蚕颈补苍)期(蚕颈)销(齿颈补辞)售(厂丑辞耻)不(叠耻)利(尝颈)导(顿补辞)致(窜丑颈)的(顿别)品(笔颈苍)牌(笔补颈)及(闯颈)渠(蚕耻)道(顿补辞)库(碍耻)存(颁耻苍)面(惭颈补苍)临(尝颈苍)消(齿颈补辞)化(贬耻补)压(驰补)力(尝颈)，颓(罢耻颈)势(厂丑颈)将(闯颈补苍驳)延(驰补苍)续(齿耻)。预(驰耻)计(闯颈)下(齿颈补)半(叠补苍)年(狈颈补苍)的(顿别)“金(闯颈苍)九(闯颈耻)银(驰颈苍)十(厂丑颈)”，以(驰颈)及(闯颈)“双(厂丑耻补苍驳)11促(颁耻)销(齿颈补辞)季(闯颈)”、“年(狈颈补苍)终(窜丑辞苍驳)好(贬补辞)价(闯颈补)节(闯颈别)”都(顿耻)将(闯颈补苍驳)继(闯颈)续(齿耻)承(颁丑别苍驳)压(驰补)。
箩颈锄丑别：肠补辞虫颈补苍驳测耻、濒耻丑补颈箩颈别飞补苍驳测辞耻蔼苍颈苍驳尘别苍驳の虫颈补迟颈补苍：
收(Shou)藏(Cang)｜半(Ban)导(Dao)体(Ti)一(Yi)些(Xie)术(Shu)语(Yu)的(De)中(Zhong)英(Ying)文(Wen)对(Dui)照(Zhao)2018-12-03 04:20·芯(Xin)榜(Bang)芯(Xin) 片(Pian) 圈(Quan)芯(Xin)片(Pian)半(Ban)导(Dao)体(Ti)人(Ren)的(De)圈(Quan)子(Zi)！100000+关(Guan)注(Zhu)精(Jing)彩(Cai)推(Tui)荐(Jian)来(Lai)源(Yuan)：ittbank常(Chang)用(Yong)半(Ban)导(Dao)体(Ti)中(Zhong)英(Ying)对(Dui)照(Zhao)表(Biao)常(Chang)用(Yong)的(De)离(Li)子(Zi)注(Zhu)入(Ru)机(Ji)：ion implanterLSS理(Li)论(Lun)：Lindhand Scharff and Schiott theory，又(You)称(Cheng)“林(Lin)汉(Han)德(De)-斯(Si)卡(Ka)夫(Fu)-斯(Si)高(Gao)特(Te)理(Li)论(Lun)”。沟(Gou)道(Dao)效(Xiao)应(Ying)：channeling effect射(She)程(Cheng)分(Fen)布(Bu)：range distribution深(Shen)度(Du)分(Fen)布(Bu)：depth distribution投(Tou)影(Ying)射(She)程(Cheng)：projected range阻(Zu)止(Zhi)距(Ju)离(Li)：stopping distance阻(Zu)止(Zhi)本(Ben)领(Ling)：stopping power标(Biao)准(Zhun)阻(Zu)止(Zhi)截(Jie)面(Mian)：standard stopping cross section退(Tui)火(Huo)：annealing激(Ji)活(Huo)能(Neng)：activation energy等(Deng)温(Wen)退(Tui)火(Huo)：isothermal annealing激(Ji)光(Guang)退(Tui)火(Huo)：laser annealing应(Ying)力(Li)感(Gan)生(Sheng)缺(Que)陷(Xian)：stress-induced defect择(Ze)优(You)取(Qu)向(Xiang)：preferred orientation制(Zhi)版(Ban)工(Gong)艺(Yi)：mask-making technology图(Tu)形(Xing)畸(Ji)变(Bian)：pattern distortion初(Chu)缩(Suo)：first minification精(Jing)缩(Suo)：final minification母(Mu)版(Ban)：master mask铬(Ge)版(Ban)：chromium plate干(Gan)版(Ban)：dry plate乳(Ru)胶(Jiao)版(Ban)：emulsion plate透(Tou)明(Ming)版(Ban)：see-through plate高(Gao)分(Fen)辨(Bian)率(Lv)版(Ban)：high resolution plate, HRP超(Chao)微(Wei)粒(Li)干(Gan)版(Ban)：plate forultra-microminiaturization掩(Yan)模(Mo)：mask掩(Yan)模(Mo)对(Dui)准(Zhun)：mask alignment对(Dui)准(Zhun)精(Jing)度(Du)：alignment precision光(Guang)刻(Ke)胶(Jiao)：photoresist，又(You)称(Cheng)“光(Guang)致(Zhi)抗(Kang)蚀(Shi)剂(Ji)”。负(Fu)性(Xing)光(Guang)刻(Ke)胶(Jiao)：negative photoresist正(Zheng)性(Xing)光(Guang)刻(Ke)胶(Jiao)：positive photoresist无(Wu)机(Ji)光(Guang)刻(Ke)胶(Jiao)：inorganic resist多(Duo)层(Ceng)光(Guang)刻(Ke)胶(Jiao)：multilevel resist电(Dian)子(Zi)束(Shu)光(Guang)刻(Ke)胶(Jiao)：electron beam resistX射(She)线(Xian)光(Guang)刻(Ke)胶(Jiao)：X-ray resist刷(Shua)洗(Xi)：scrubbing甩(Shuai)胶(Jiao)：spinning涂(Tu)胶(Jiao)：photoresist coating后(Hou)烘(Hong)：postbaking光(Guang)刻(Ke)：photolithographyX射(She)线(Xian)光(Guang)刻(Ke)：X-ray lithography电(Dian)子(Zi)束(Shu)光(Guang)刻(Ke)：electron beam lithography离(Li)子(Zi)束(Shu)光(Guang)刻(Ke)：ion beam lithography深(Shen)紫(Zi)外(Wai)光(Guang)刻(Ke)：deep-UV lithography光(Guang)刻(Ke)机(Ji)：mask aligner投(Tou)影(Ying)光(Guang)刻(Ke)机(Ji)：projection mask aligner曝(Pu)光(Guang)：exposure接(Jie)触(Chu)式(Shi)曝(Pu)光(Guang)法(Fa)：contact exposure method接(Jie)近(Jin)式(Shi)曝(Pu)光(Guang)法(Fa)：proximity exposure method光(Guang)学(Xue)投(Tou)影(Ying)曝(Pu)光(Guang)法(Fa)：optical projection exposure method电(Dian)子(Zi)束(Shu)曝(Pu)光(Guang)系(Xi)统(Tong)：electron beam exposure system分(Fen)步(Bu)重(Zhong)复(Fu)系(Xi)统(Tong)：step-and-repeat system显(Xian)影(Ying)：development线(Xian)宽(Kuan)：linewidth去(Qu)胶(Jiao)：stripping of photoresist氧(Yang)化(Hua)去(Qu)胶(Jiao)：removing of photoresist by oxidation等(Deng)离(Li)子(Zi)［体(Ti)］去(Qu)胶(Jiao)：removing of photoresist by plasma刻(Ke)蚀(Shi)：etching干(Gan)法(Fa)刻(Ke)蚀(Shi)：dry etching反(Fan)应(Ying)离(Li)子(Zi)刻(Ke)蚀(Shi)：reactive ion etching,：RIE各(Ge)向(Xiang)同(Tong)性(Xing)刻(Ke)蚀(Shi)：isotropic etching各(Ge)向(Xiang)异(Yi)性(Xing)刻(Ke)蚀(Shi)：anisotropic etching反(Fan)应(Ying)溅(Jian)射(She)刻(Ke)蚀(Shi)：reactive sputter etching离(Li)子(Zi)铣(Xi)：ion beam milling，又(You)称(Cheng)“离(Li)子(Zi)磨(Mo)削(Xiao)”。等(Deng)离(Li)子(Zi)［体(Ti)］刻(Ke)蚀(Shi)：plasma etching钻(Zuan)蚀(Shi)：undercutting剥(Bao)离(Li)技(Ji)术(Shu)：lift-off technology，又(You)称(Cheng)“浮(Fu)脱(Tuo)工(Gong)艺(Yi)”。终(Zhong)点(Dian)监(Jian)测(Ce)：endpoint monitoring金(Jin)属(Shu)化(Hua)：metallization互(Hu)连(Lian)：interconnection多(Duo)层(Ceng)金(Jin)属(Shu)化(Hua)：multilevel metallization电(Dian)迁(Qian)徙(Zuo)：electromigration回(Hui)流(Liu)：reflow磷(Lin)硅(Gui)玻(Bo)璃(Li)：phosphorosilicate glass硼(Peng)磷(Lin)硅(Gui)玻(Bo)璃(Li)：boron-phosphorosilicate glass钝(Dun)化(Hua)工(Gong)艺(Yi)：passivation technology多(Duo)层(Ceng)介(Jie)质(Zhi)钝(Dun)化(Hua)：multilayer dielectric passivation划(Hua)片(Pian)：scribing电(Dian)子(Zi)束(Shu)切(Qie)片(Pian)：electron beam slicing烧(Shao)结(Jie)：sintering印(Yin)压(Ya)：indentation热(Re)压(Ya)焊(Han)：thermocompression bonding热(Re)超(Chao)声(Sheng)焊(Han)：thermosonic bonding冷(Leng)焊(Han)：cold welding点(Dian)焊(Han)：spot welding球(Qiu)焊(Han)：ball bonding楔(Xie)焊(Han)：wedge bonding内(Nei)引(Yin)线(Xian)焊(Han)接(Jie)：inner lead bonding外(Wai)引(Yin)线(Xian)焊(Han)接(Jie)：outer lead bonding梁(Liang)式(Shi)引(Yin)线(Xian)：beam lead装(Zhuang)架(Jia)工(Gong)艺(Yi)：mounting technology附(Fu)着(Zhuo)：adhesion封(Feng)装(Zhuang)：packaging金(Jin)属(Shu)封(Feng)装(Zhuang)：metallic packaging陶(Tao)瓷(Ci)封(Feng)装(Zhuang)：ceramic packaging扁(Bian)平(Ping)封(Feng)装(Zhuang)：flat packaging塑(Su)封(Feng)：plastic package玻(Bo)璃(Li)封(Feng)装(Zhuang)：glass packaging微(Wei)封(Feng)装(Zhuang)：micropackaging，又(You)称(Cheng)“微(Wei)组(Zu)装(Zhuang)”。管(Guan)壳(Ke)：package管(Guan)芯(Xin)：die引(Yin)线(Xian)键(Jian)合(He)：lead bonding引(Yin)线(Xian)框(Kuang)式(Shi)键(Jian)合(He)：lead frame bonding带(Dai)式(Shi)自(Zi)动(Dong)键(Jian)合(He)：tape automated bonding, TAB激(Ji)光(Guang)键(Jian)合(He)：laser bonding超(Chao)声(Sheng)键(Jian)合(He)：ultrasonic bonding红(Hong)外(Wai)键(Jian)合(He)：infrared bonding微(Wei)电(Dian)子(Zi)辞(Ci)典(Dian)大(Da)集(Ji)合(He)（按(An)首(Shou)字(Zi)母(Mu)顺(Shun)序(Xu)排(Pai)序(Xu)）AAbrupt junction 突(Tu)变(Bian)结(Jie)Accelerated testing 加(Jia)速(Su)实(Shi)验(Yan)Acceptor 受(Shou)主(Zhu)Acceptor atom 受(Shou)主(Zhu)原(Yuan)子(Zi)Accumulation 积(Ji)累(Lei)、堆(Dui)积(Ji)Accumulating contact 积(Ji)累(Lei)接(Jie)触(Chu)Accumulation region 积(Ji)累(Lei)区(Qu)Accumulation layer 积(Ji)累(Lei)层(Ceng)Active region 有(You)源(Yuan)区(Qu)Active component 有(You)源(Yuan)元(Yuan)Active device 有(You)源(Yuan)器(Qi)件(Jian)Activation 激(Ji)活(Huo)Activation energy 激(Ji)活(Huo)能(Neng)Active region 有(You)源(Yuan)（放(Fang)大(Da)）区(Qu)Admittance 导(Dao)纳(Na)Allowed band 允(Yun)带(Dai)Alloy-junction device合(He)金(Jin)结(Jie)器(Qi)件(Jian) Aluminum(Aluminium) 铝(Lv)Aluminum – oxide 铝(Lv)氧(Yang)化(Hua)物(Wu)Aluminum passivation 铝(Lv)钝(Dun)化(Hua)Ambipolar 双(Shuang)极(Ji)的(De)Ambient temperature 环(Huan)境(Jing)温(Wen)度(Du)Amorphous 无(Wu)定(Ding)形(Xing)的(De)，非(Fei)晶(Jing)体(Ti)的(De)Amplifier 功(Gong)放(Fang) 扩(Kuo)音(Yin)器(Qi) 放(Fang)大(Da)器(Qi)Analogue(Analog) comparator 模(Mo)拟(Ni)比(Bi)较(Jiao)器(Qi) Angstrom 埃(Ai)Anneal 退(Tui)火(Huo)Anisotropic 各(Ge)向(Xiang)异(Yi)性(Xing)的(De)Anode 阳(Yang)极(Ji)Arsenic (AS) 砷(Shen)Auger 俄(E)歇(Xie)Auger process 俄(E)歇(Xie)过(Guo)程(Cheng)Avalanche 雪(Xue)崩(Beng)Avalanche breakdown 雪(Xue)崩(Beng)击(Ji)穿(Chuan)Avalanche excitation雪(Xue)崩(Beng)激(Ji)发(Fa)BBackground carrier 本(Ben)底(Di)载(Zai)流(Liu)子(Zi)Background doping 本(Ben)底(Di)掺(Chan)杂(Za)Backward 反(Fan)向(Xiang)Backward bias 反(Fan)向(Xiang)偏(Pian)置(Zhi)Ballasting resistor 整(Zheng)流(Liu)电(Dian)阻(Zu)Ball bond 球(Qiu)形(Xing)键(Jian)合(He)Band gap 能(Neng)带(Dai)间(Jian)隙(Xi)Barrier 势(Shi)垒(Lei)Barrier layer 势(Shi)垒(Lei)层(Ceng)Barrier width 势(Shi)垒(Lei)宽(Kuan)度(Du)Base 基(Ji)极(Ji)Base contact 基(Ji)区(Qu)接(Jie)触(Chu)Base stretching 基(Ji)区(Qu)扩(Kuo)展(Zhan)效(Xiao)应(Ying)Base transit time 基(Ji)区(Qu)渡(Du)越(Yue)时(Shi)间(Jian)Base transport efficiency基(Ji)区(Qu)输(Shu)运(Yun)系(Xi)数(Shu)Base-width modulation基(Ji)区(Qu)宽(Kuan)度(Du)调(Diao)制(Zhi)Basis vector 基(Ji)矢(Shi)Bias 偏(Pian)置(Zhi)Bilateral switch 双(Shuang)向(Xiang)开(Kai)关(Guan)Binary code 二(Er)进(Jin)制(Zhi)代(Dai)码(Ma)Binary compound semiconductor 二(Er)元(Yuan)化(Hua)合(He)物(Wu)半(Ban)导(Dao)体(Ti)Bipolar 双(Shuang)极(Ji)性(Xing)的(De)Bipolar Junction Transistor (BJT)双(Shuang)极(Ji)晶(Jing)体(Ti)管(Guan)Bloch 布(Bu)洛(Luo)赫(He)Blocking band 阻(Zu)挡(Dang)能(Neng)带(Dai)Blocking contact 阻(Zu)挡(Dang)接(Jie)触(Chu)Body - centered 体(Ti)心(Xin)立(Li)方(Fang)Body-centred cubic structure 体(Ti)立(Li)心(Xin)结(Jie)构(Gou)Boltzmann 波(Bo)尔(Er)兹(Zi)曼(Man)Bond 键(Jian)、键(Jian)合(He)Bonding electron 价(Jia)电(Dian)子(Zi)Bonding pad 键(Jian)合(He)点(Dian)Bootstrap circuit 自(Zi)举(Ju)电(Dian)路(Lu)Bootstrapped emitter follower 自(Zi)举(Ju)射(She)极(Ji)跟(Gen)随(Sui)器(Qi)Boron 硼(Peng)Borosilicate glass 硼(Peng)硅(Gui)玻(Bo)璃(Li)Boundary condition 边(Bian)界(Jie)条(Tiao)件(Jian)Bound electron 束(Shu)缚(Fu)电(Dian)子(Zi)Breadboard 模(Mo)拟(Ni)板(Ban)、实(Shi)验(Yan)板(Ban)Break down 击(Ji)穿(Chuan)Break over 转(Zhuan)折(Zhe)Brillouin 布(Bu)里(Li)渊(Yuan)Brillouin zone 布(Bu)里(Li)渊(Yuan)区(Qu)Built-in 内(Nei)建(Jian)的(De)Build-in electric field 内(Nei)建(Jian)电(Dian)场(Chang)Bulk 体(Ti)/体(Ti)内(Nei) Bulk absorption 体(Ti)吸(Xi)收(Shou)Bulk generation 体(Ti)产(Chan)生(Sheng)Bulk recombination 体(Ti)复(Fu)合(He)Burn - in 老(Lao)化(Hua)Burn out 烧(Shao)毁(Hui)Buried channel 埋(Mai)沟(Gou)Buried diffusion region 隐(Yin)埋(Mai)扩(Kuo)散(San)区(Qu)CCan 外(Wai)壳(Ke)Capacitance 电(Dian)容(Rong)Capture cross section 俘(Fu)获(Huo)截(Jie)面(Mian)Capture carrier 俘(Fu)获(Huo)载(Zai)流(Liu)子(Zi)Carrier 载(Zai)流(Liu)子(Zi)、载(Zai)波(Bo)Carry bit 进(Jin)位(Wei)位(Wei)Carry-in bit 进(Jin)位(Wei)输(Shu)入(Ru)Carry-out bit 进(Jin)位(Wei)输(Shu)出(Chu)Cascade 级(Ji)联(Lian)Case 管(Guan)壳(Ke)Cathode 阴(Yin)极(Ji)Center 中(Zhong)心(Xin)Ceramic 陶(Tao)瓷(Ci)（的(De)）Channel 沟(Gou)道(Dao)Channel breakdown 沟(Gou)道(Dao)击(Ji)穿(Chuan)Channel current 沟(Gou)道(Dao)电(Dian)流(Liu)Channel doping 沟(Gou)道(Dao)掺(Chan)杂(Za)Channel shortening 沟(Gou)道(Dao)缩(Suo)短(Duan)Channel width 沟(Gou)道(Dao)宽(Kuan)度(Du)Characteristic impedance 特(Te)征(Zheng)阻(Zu)抗(Kang)Charge 电(Dian)荷(He)、充(Chong)电(Dian)Charge-compensation effects 电(Dian)荷(He)补(Bu)偿(Chang)效(Xiao)应(Ying)Charge conservation 电(Dian)荷(He)守(Shou)恒(Heng)Charge neutrality condition 电(Dian)中(Zhong)性(Xing)条(Tiao)件(Jian)Chargedrive/exchange/sharing/transfer/storage 电(Dian)荷(He)驱(Qu)动(Dong)/交(Jiao)换(Huan)/共(Gong)享(Xiang)/转(Zhuan)移(Yi)/存(Cun)储(Chu)Chemmical etching 化(Hua)学(Xue)腐(Fu)蚀(Shi)法(Fa)Chemically-Polish 化(Hua)学(Xue)抛(Pao)光(Guang)Chemmically-Mechanically Polish (CMP) 化(Hua)学(Xue)机(Ji)械(Xie)抛(Pao)光(Guang) Chip 芯(Xin)片(Pian)Chip yield 芯(Xin)片(Pian)成(Cheng)品(Pin)率(Lv)Clamped 箝(Zuo)位(Wei)Clamping diode 箝(Zuo)位(Wei)二(Er)极(Ji)管(Guan)Cleavage plane 解(Jie)理(Li)面(Mian)Clock rate 时(Shi)钟(Zhong)频(Pin)率(Lv)Clock generator 时(Shi)钟(Zhong)发(Fa)生(Sheng)器(Qi)Clock flip-flop 时(Shi)钟(Zhong)触(Chu)发(Fa)器(Qi)Close-packed structure 密(Mi)堆(Dui)积(Ji)结(Jie)构(Gou)Close-loop gain 闭(Bi)环(Huan)增(Zeng)益(Yi)Collector 集(Ji)电(Dian)极(Ji)Collision 碰(Peng)撞(Zhuang)Compensated OP-AMP 补(Bu)偿(Chang)运(Yun)放(Fang)Common-base/collector/emitter connection 共(Gong)基(Ji)极(Ji)/集(Ji)电(Dian)极(Ji)/发(Fa)射(She)极(Ji)连(Lian)接(Jie)Common-gate/drain/source connection 共(Gong)栅(Zha)/漏(Lou)/源(Yuan)连(Lian)接(Jie)Common-mode gain 共(Gong)模(Mo)增(Zeng)益(Yi)Common-mode input 共(Gong)模(Mo)输(Shu)入(Ru)Common-mode rejection ratio (CMRR) 共(Gong)模(Mo)抑(Yi)制(Zhi)比(Bi)Compatibility 兼(Jian)容(Rong)性(Xing)Compensation 补(Bu)偿(Chang)Compensated impurities 补(Bu)偿(Chang)杂(Za)质(Zhi)Compensated semiconductor 补(Bu)偿(Chang)半(Ban)导(Dao)体(Ti)Complementary Darlington circuit 互(Hu)补(Bu)达(Da)林(Lin)顿(Dun)电(Dian)路(Lu)Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS) 互(Hu)补(Bu)金(Jin)属(Shu)氧(Yang)化(Hua)物(Wu)半(Ban)导(Dao)体(Ti)场(Chang)效(Xiao)应(Ying)晶(Jing)体(Ti)管(Guan)Complementary error function 余(Yu)误(Wu)差(Cha)函(Han)数(Shu)Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 计(Ji)算(Suan)机(Ji)辅(Fu)助(Zhu)设(She)计(Ji)/ 测(Ce)试(Shi) /制(Zhi) 造(Zao)Compound Semiconductor 化(Hua)合(He)物(Wu)半(Ban)导(Dao)体(Ti)Conductance 电(Dian)导(Dao)Conduction band (edge) 导(Dao)带(Dai)(底(Di))Conduction level/state 导(Dao)带(Dai)态(Tai)Conductor 导(Dao)体(Ti)Conductivity 电(Dian)导(Dao)率(Lv)Configuration 组(Zu)态(Tai)Conlomb 库(Ku)仑(Lun)Conpled Configuration Devices 结(Jie)构(Gou)组(Zu)态(Tai)Constants 物(Wu)理(Li)常(Chang)数(Shu)Constant energy surface 等(Deng)能(Neng)面(Mian)Constant-source diffusion恒(Heng)定(Ding)源(Yuan)扩(Kuo)散(San)Contact 接(Jie)触(Chu)Contamination 治(Zhi)污(Wu)Continuity equation 连(Lian)续(Xu)性(Xing)方(Fang)程(Cheng)Contact hole 接(Jie)触(Chu)孔(Kong)Contact potential 接(Jie)触(Chu)电(Dian)势(Shi)Continuity condition 连(Lian)续(Xu)性(Xing)条(Tiao)件(Jian)Contra doping 反(Fan)掺(Chan)杂(Za)Controlled 受(Shou)控(Kong)的(De)Converter 转(Zhuan)换(Huan)器(Qi)Conveyer 传(Chuan)输(Shu)器(Qi)Copper interconnection system 铜(Tong)互(Hu)连(Lian)系(Xi)统(Tong)Couping 耦(Zuo)合(He)Covalent 共(Gong)阶(Jie)的(De)Crossover 跨(Kua)交(Jiao)Critical 临(Lin)界(Jie)的(De)Crossunder 穿(Chuan)交(Jiao)Crucible坩(Zuo)埚(Zuo)Crystaldefect/face/orientation/lattice 晶(Jing)体(Ti)缺(Que)陷(Xian)/晶(Jing)面(Mian)/晶(Jing)向(Xiang)/晶(Jing)格(Ge)Current density 电(Dian)流(Liu)密(Mi)度(Du)Curvature 曲(Qu)率(Lv)Cut off 截(Jie)止(Zhi)Current drift/dirve/sharing 电(Dian)流(Liu)漂(Piao)移(Yi)/驱(Qu)动(Dong)/共(Gong)享(Xiang)Current Sense 电(Dian)流(Liu)取(Qu)样(Yang)Curvature 弯(Wan)曲(Qu)Custom integrated circuit 定(Ding)制(Zhi)集(Ji)成(Cheng)电(Dian)路(Lu)Cylindrical 柱(Zhu)面(Mian)的(De)Czochralshicrystal 直(Zhi)立(Li)单(Dan)晶(Jing)Czochralski technique 切(Qie)克(Ke)劳(Lao)斯(Si)基(Ji)技(Ji)术(Shu)（Cz法(Fa)直(Zhi)拉(La)晶(Jing)体(Ti)J）DDangling bonds 悬(Xuan)挂(Gua)键(Jian)Dark current 暗(An)电(Dian)流(Liu)Dead time 空(Kong)载(Zai)时(Shi)间(Jian)Debye length 德(De)拜(Bai)长(Chang)度(Du)De.broglie 德(De)布(Bu)洛(Luo)意(Yi)Decderate 减(Jian)速(Su)Decibel (dB) 分(Fen)贝(Bei)Decode 译(Yi)码(Ma)Deep acceptor level 深(Shen)受(Shou)主(Zhu)能(Neng)级(Ji)Deep donor level 深(Shen)施(Shi)主(Zhu)能(Neng)级(Ji)Deep impurity level 深(Shen)度(Du)杂(Za)质(Zhi)能(Neng)级(Ji)Deep trap 深(Shen)陷(Xian)阱(Zuo)Defeat 缺(Que)陷(Xian)Degenerate semiconductor 简(Jian)并(Bing)半(Ban)导(Dao)体(Ti)Degeneracy 简(Jian)并(Bing)度(Du)Degradation 退(Tui)化(Hua)Degree Celsius(centigrade) /Kelvin 摄(She)氏(Shi)/开(Kai)氏(Shi)温(Wen)度(Du)Delay 延(Yan)迟(Chi) Density 密(Mi)度(Du)Density of states 态(Tai)密(Mi)度(Du)Depletion 耗(Hao)尽(Jin)Depletion approximation 耗(Hao)尽(Jin)近(Jin)似(Si)Depletion contact 耗(Hao)尽(Jin)接(Jie)触(Chu)Depletion depth 耗(Hao)尽(Jin)深(Shen)度(Du)Depletion effect 耗(Hao)尽(Jin)效(Xiao)应(Ying)Depletion layer 耗(Hao)尽(Jin)层(Ceng)Depletion MOS 耗(Hao)尽(Jin)MOSDepletion region 耗(Hao)尽(Jin)区(Qu)Deposited film 淀(Dian)积(Ji)薄(Bao)膜(Mo)Deposition process 淀(Dian)积(Ji)工(Gong)艺(Yi)Design rules 设(She)计(Ji)规(Gui)则(Ze)Die 芯(Xin)片(Pian)（复(Fu)数(Shu)dice）Diode 二(Er)极(Ji)管(Guan)Dielectric 介(Jie)电(Dian)的(De)Dielectric isolation 介(Jie)质(Zhi)隔(Ge)离(Li)Difference-mode input 差(Cha)模(Mo)输(Shu)入(Ru)Differential amplifier 差(Cha)分(Fen)放(Fang)大(Da)器(Qi)Differential capacitance 微(Wei)分(Fen)电(Dian)容(Rong)Diffused junction 扩(Kuo)散(San)结(Jie)Diffusion 扩(Kuo)散(San)Diffusion coefficient 扩(Kuo)散(San)系(Xi)数(Shu)Diffusion constant 扩(Kuo)散(San)常(Chang)数(Shu)Diffusivity 扩(Kuo)散(San)率(Lv)Diffusioncapacitance/barrier/current/furnace 扩(Kuo)散(San)电(Dian)容(Rong)/势(Shi)垒(Lei)/电(Dian)流(Liu)/炉(Lu)Digital circuit 数(Shu)字(Zi)电(Dian)路(Lu)Dipole domain 偶(Ou)极(Ji)畴(Chou)Dipole layer 偶(Ou)极(Ji)层(Ceng)Direct-coupling 直(Zhi)接(Jie)耦(Zuo)合(He)Direct-gap semiconductor 直(Zhi)接(Jie)带(Dai)隙(Xi)半(Ban)导(Dao)体(Ti)Direct transition 直(Zhi)接(Jie)跃(Yue)迁(Qian)Discharge 放(Fang)电(Dian)Discrete component 分(Fen)立(Li)元(Yuan)件(Jian)Dissipation 耗(Hao)散(San)Distribution 分(Fen)布(Bu)Distributed capacitance 分(Fen)布(Bu)电(Dian)容(Rong)Distributed model 分(Fen)布(Bu)模(Mo)型(Xing)Displacement 位(Wei)移(Yi) Dislocation 位(Wei)错(Cuo)Domain 畴(Chou) Donor 施(Shi)主(Zhu)Donor exhaustion 施(Shi)主(Zhu)耗(Hao)尽(Jin)Dopant 掺(Chan)杂(Za)剂(Ji)Doped semiconductor 掺(Chan)杂(Za)半(Ban)导(Dao)体(Ti)Doping concentration 掺(Chan)杂(Za)浓(Nong)度(Du)Double-diffusive MOS(DMOS)双(Shuang)扩(Kuo)散(San)MOS.Drift 漂(Piao)移(Yi) Drift field 漂(Piao)移(Yi)电(Dian)场(Chang)Drift mobility 迁(Qian)移(Yi)率(Lv)Dry etching 干(Gan)法(Fa)腐(Fu)蚀(Shi)Dry/wet oxidation 干(Gan)/湿(Shi)法(Fa)氧(Yang)化(Hua)Dose 剂(Ji)量(Liang)Duty cycle 工(Gong)作(Zuo)周(Zhou)期(Qi)Dual-in-line package （DIP） 双(Shuang)列(Lie)直(Zhi)插(Cha)式(Shi)封(Feng)装(Zhuang)Dynamics 动(Dong)态(Tai)Dynamic characteristics 动(Dong)态(Tai)属(Shu)性(Xing)Dynamic impedance 动(Dong)态(Tai)阻(Zu)抗(Kang)EEarly effect 厄(E)利(Li)效(Xiao)应(Ying)Early failure 早(Zao)期(Qi)失(Shi)效(Xiao)Effective mass 有(You)效(Xiao)质(Zhi)量(Liang)Einstein relation(ship) 爱(Ai)因(Yin)斯(Si)坦(Tan)关(Guan)系(Xi)Electric Erase Programmable Read Only Memory(E2PROM) 一(Yi)次(Ci)性(Xing)电(Dian)可(Ke)擦(Ba)除(Chu)只(Zhi)读(Du)存(Cun)储(Chu)器(Qi)Electrode 电(Dian)极(Ji)Electrominggratim 电(Dian)迁(Qian)移(Yi)Electron affinity 电(Dian)子(Zi)亲(Qin)和(He)势(Shi)Electronic -grade 电(Dian)子(Zi)能(Neng)Electron-beam photo-resist exposure 光(Guang)致(Zhi)抗(Kang)蚀(Shi)剂(Ji)的(De)电(Dian)子(Zi)束(Shu)曝(Pu)光(Guang)Electron gas 电(Dian)子(Zi)气(Qi)Electron-grade water 电(Dian)子(Zi)级(Ji)纯(Chun)水(Shui)Electron trapping center 电(Dian)子(Zi)俘(Fu)获(Huo)中(Zhong)心(Xin)Electron Volt (eV) 电(Dian)子(Zi)伏(Fu)Electrostatic 静(Jing)电(Dian)的(De)Element 元(Yuan)素(Su)/元(Yuan)件(Jian)/配(Pei)件(Jian)Elemental semiconductor 元(Yuan)素(Su)半(Ban)导(Dao)体(Ti)Ellipse 椭(Tuo)圆(Yuan)Ellipsoid 椭(Tuo)球(Qiu)Emitter 发(Fa)射(She)极(Ji)Emitter-coupled logic 发(Fa)射(She)极(Ji)耦(Zuo)合(He)逻(Luo)辑(Ji)Emitter-coupled pair 发(Fa)射(She)极(Ji)耦(Zuo)合(He)对(Dui)Emitter follower 射(She)随(Sui)器(Qi)Empty band 空(Kong)带(Dai)Emitter crowding effect 发(Fa)射(She)极(Ji)集(Ji)边(Bian)（拥(Yong)挤(Ji)）效(Xiao)应(Ying)Endurance test =life test 寿(Shou)命(Ming)测(Ce)试(Shi)Energy state 能(Neng)态(Tai)Energy momentum diagram 能(Neng)量(Liang)-动(Dong)量(Liang)(E-K)图(Tu)Enhancement mode 增(Zeng)强(Qiang)型(Xing)模(Mo)式(Shi)Enhancement MOS 增(Zeng)强(Qiang)性(Xing)MOS Entefic (低(Di))共(Gong)溶(Rong)的(De)Environmental test 环(Huan)境(Jing)测(Ce)试(Shi)Epitaxial 外(Wai)延(Yan)的(De)Epitaxial layer 外(Wai)延(Yan)层(Ceng)Epitaxial slice 外(Wai)延(Yan)片(Pian)Expitaxy 外(Wai)延(Yan)Equivalent curcuit 等(Deng)效(Xiao)电(Dian)路(Lu)Equilibrium majority /minority carriers 平(Ping)衡(Heng)多(Duo)数(Shu)/少(Shao)数(Shu)载(Zai)流(Liu)子(Zi)Erasable Programmable ROM (EPROM)可(Ke)搽(Cha)取(Qu)（编(Bian)程(Cheng)）存(Cun)储(Chu)器(Qi)Error function complement 余(Yu)误(Wu)差(Cha)函(Han)数(Shu)Etch 刻(Ke)蚀(Shi)Etchant 刻(Ke)蚀(Shi)剂(Ji)Etching mask 抗(Kang)蚀(Shi)剂(Ji)掩(Yan)模(Mo)Excess carrier 过(Guo)剩(Sheng)载(Zai)流(Liu)子(Zi)Excitation energy 激(Ji)发(Fa)能(Neng)Excited state 激(Ji)发(Fa)态(Tai)Exciton 激(Ji)子(Zi)Extrapolation 外(Wai)推(Tui)法(Fa)Extrinsic 非(Fei)本(Ben)征(Zheng)的(De)Extrinsic semiconductor 杂(Za)质(Zhi)半(Ban)导(Dao)体(Ti)FFace - centered 面(Mian)心(Xin)立(Li)方(Fang)Fall time 下(Xia)降(Jiang)时(Shi)间(Jian)Fan-in 扇(Shan)入(Ru)Fan-out 扇(Shan)出(Chu)Fast recovery 快(Kuai)恢(Hui)复(Fu)Fast surface states 快(Kuai)界(Jie)面(Mian)态(Tai)Feedback 反(Fan)馈(Kui)Fermi level 费(Fei)米(Mi)能(Neng)级(Ji)Fermi-Dirac Distribution 费(Fei)米(Mi)-狄(Di)拉(La)克(Ke)分(Fen)布(Bu)Femi potential 费(Fei)米(Mi)势(Shi)Fick equation 菲(Fei)克(Ke)方(Fang)程(Cheng)（扩(Kuo)散(San)）Field effect transistor 场(Chang)效(Xiao)应(Ying)晶(Jing)体(Ti)管(Guan)Field oxide 场(Chang)氧(Yang)化(Hua)层(Ceng)Filled band 满(Man)带(Dai)Film 薄(Bao)膜(Mo)Flash memory 闪(Shan)烁(Shuo)存(Cun)储(Chu)器(Qi)Flat band 平(Ping)带(Dai)Flat pack 扁(Bian)平(Ping)封(Feng)装(Zhuang)Flicker noise 闪(Shan)烁(Shuo)（变(Bian)）噪(Zao)声(Sheng)Flip-flop toggle 触(Chu)发(Fa)器(Qi)翻(Fan)转(Zhuan)Floating gate 浮(Fu)栅(Zha)Fluoride etch 氟(Fu)化(Hua)氢(Qing)刻(Ke)蚀(Shi)Forbidden band 禁(Jin)带(Dai)Forward bias 正(Zheng)向(Xiang)偏(Pian)置(Zhi)Forward blocking /conducting正(Zheng)向(Xiang)阻(Zu)断(Duan)/导(Dao)通(Tong)Frequency deviation noise频(Pin)率(Lv)漂(Piao)移(Yi)噪(Zao)声(Sheng)Frequency response 频(Pin)率(Lv)响(Xiang)应(Ying)Function 函(Han)数(Shu)GGain 增(Zeng)益(Yi) Gallium-Arsenide(GaAs) 砷(Shen)化(Hua)钾(Jia)Gamy ray r 射(She)线(Xian)Gate 门(Men)、栅(Zha)、控(Kong)制(Zhi)极(Ji)Gate oxide 栅(Zha)氧(Yang)化(Hua)层(Ceng)Gauss（ian） 高(Gao)斯(Si)Gaussian distribution profile 高(Gao)斯(Si)掺(Chan)杂(Za)分(Fen)布(Bu)Generation-recombination 产(Chan)生(Sheng)-复(Fu)合(He)Geometries 几(Ji)何(He)尺(Chi)寸(Cun)Germanium(Ge) 锗(Zhe)Graded 缓(Huan)变(Bian)的(De)Graded (gradual) channel 缓(Huan)变(Bian)沟(Gou)道(Dao)Graded junction 缓(Huan)变(Bian)结(Jie)Grain 晶(Jing)粒(Li)Gradient 梯(Ti)度(Du)Grown junction 生(Sheng)长(Chang)结(Jie)Guard ring 保(Bao)护(Hu)环(Huan)Gummel-Poom model 葛(Ge)谋(Mou)-潘(Pan) 模(Mo)型(Xing)Gunn - effect 狄(Di)氏(Shi)效(Xiao)应(Ying)HHardened device 辐(Fu)射(She)加(Jia)固(Gu)器(Qi)件(Jian)Heat of formation 形(Xing)成(Cheng)热(Re)Heat sink 散(San)热(Re)器(Qi)、热(Re)沉(Chen)Heavy/light hole band 重(Zhong)/轻(Qing) 空(Kong)穴(Xue)带(Dai)Heavy saturation 重(Zhong)掺(Chan)杂(Za)Hell - effect 霍(Huo)尔(Er)效(Xiao)应(Ying)Heterojunction 异(Yi)质(Zhi)结(Jie)Heterojunction structure 异(Yi)质(Zhi)结(Jie)结(Jie)构(Gou)Heterojunction Bipolar Transistor（HBT）异(Yi)质(Zhi)结(Jie)双(Shuang)极(Ji)型(Xing)晶(Jing)体(Ti)High field property 高(Gao)场(Chang)特(Te)性(Xing)High-performance MOS.( H-MOS)高(Gao)性(Xing)能(Neng)MOS. Hormalized 归(Gui)一(Yi)化(Hua)Horizontal epitaxial reactor 卧(Wo)式(Shi)外(Wai)延(Yan)反(Fan)应(Ying)器(Qi)Hot carrior 热(Re)载(Zai)流(Liu)子(Zi)Hybrid integration 混(Hun)合(He)集(Ji)成(Cheng)IImage - force 镜(Jing)象(Xiang)力(Li)Impact ionization 碰(Peng)撞(Zhuang)电(Dian)离(Li)Impedance 阻(Zu)抗(Kang)Imperfect structure 不(Bu)完(Wan)整(Zheng)结(Jie)构(Gou)Implantation dose 注(Zhu)入(Ru)剂(Ji)量(Liang)Implanted ion 注(Zhu)入(Ru)离(Li)子(Zi)Impurity 杂(Za)质(Zhi)Impurity scattering 杂(Za)志(Zhi)散(San)射(She)Incremental resistance 电(Dian)阻(Zu)增(Zeng)量(Liang)（微(Wei)分(Fen)电(Dian)阻(Zu)）In-contact mask 接(Jie)触(Chu)式(Shi)掩(Yan)模(Mo)Indium tin oxide (ITO) 铟(Zuo)锡(Xi)氧(Yang)化(Hua)物(Wu)Induced channel 感(Gan)应(Ying)沟(Gou)道(Dao)Infrared 红(Hong)外(Wai)的(De)Injection 注(Zhu)入(Ru)Input offset voltage 输(Shu)入(Ru)失(Shi)调(Diao)电(Dian)压(Ya)Insulator 绝(Jue)缘(Yuan)体(Ti)Insulated Gate FET(IGFET)绝(Jue)缘(Yuan)栅(Zha)FET Integrated injection logic集(Ji)成(Cheng)注(Zhu)入(Ru)逻(Luo)辑(Ji)Integration 集(Ji)成(Cheng)、积(Ji)分(Fen)Interconnection 互(Hu)连(Lian)Interconnection time delay 互(Hu)连(Lian)延(Yan)时(Shi)Interdigitated structure 交(Jiao)互(Hu)式(Shi)结(Jie)构(Gou)Interface 界(Jie)面(Mian)Interference 干(Gan)涉(She)International system of unions国(Guo)际(Ji)单(Dan)位(Wei)制(Zhi)Internally scattering 谷(Gu)间(Jian)散(San)射(She)Interpolation 内(Nei)插(Cha)法(Fa)Intrinsic 本(Ben)征(Zheng)的(De)Intrinsic semiconductor 本(Ben)征(Zheng)半(Ban)导(Dao)体(Ti)Inverse operation 反(Fan)向(Xiang)工(Gong)作(Zuo)Inversion 反(Fan)型(Xing)Inverter 倒(Dao)相(Xiang)器(Qi)Ion 离(Li)子(Zi)Ion beam 离(Li)子(Zi)束(Shu)Ion etching 离(Li)子(Zi)刻(Ke)蚀(Shi)Ion implantation 离(Li)子(Zi)注(Zhu)入(Ru)Ionization 电(Dian)离(Li)Ionization energy 电(Dian)离(Li)能(Neng)Irradiation 辐(Fu)照(Zhao)Isolation land 隔(Ge)离(Li)岛(Dao)Isotropic 各(Ge)向(Xiang)同(Tong)性(Xing)JJunction FET(JFET) 结(Jie)型(Xing)场(Chang)效(Xiao)应(Ying)管(Guan)Junction isolation 结(Jie)隔(Ge)离(Li)Junction spacing 结(Jie)间(Jian)距(Ju)Junction side-wall 结(Jie)侧(Ce)壁(Bi)LLatch up 闭(Bi)锁(Suo)Lateral 横(Heng)向(Xiang)的(De)Lattice 晶(Jing)格(Ge)Layout 版(Ban)图(Tu)Latticebinding/cell/constant/defect/distortion 晶(Jing)格(Ge)结(Jie)合(He)力(Li)/晶(Jing)胞(Bao)/晶(Jing)格(Ge)/晶(Jing)格(Ge)常(Chang)熟(Shu)/晶(Jing)格(Ge)缺(Que)陷(Xian)/晶(Jing)格(Ge)畸(Ji)变(Bian)Leakage current （泄(Xie)）漏(Lou)电(Dian)流(Liu)Level shifting 电(Dian)平(Ping)移(Yi)动(Dong)Life time 寿(Shou)命(Ming)linearity 线(Xian)性(Xing)度(Du)Linked bond 共(Gong)价(Jia)键(Jian)Liquid Nitrogen 液(Ye)氮(Dan)Liquid－phase epitaxial growth technique 液(Ye)相(Xiang)外(Wai)延(Yan)生(Sheng)长(Chang)技(Ji)术(Shu)Lithography 光(Guang)刻(Ke)Light Emitting Diode(LED) 发(Fa)光(Guang)二(Er)极(Ji)管(Guan)Load line or Variable 负(Fu)载(Zai)线(Xian)Locating and Wiring 布(Bu)局(Ju)布(Bu)线(Xian)Longitudinal 纵(Zong)向(Xiang)的(De)Logic swing 逻(Luo)辑(Ji)摆(Bai)幅(Fu)Lorentz 洛(Luo)沦(Lun)兹(Zi)Lumped model 集(Ji)总(Zong)模(Mo)型(Xing)MMajority carrier 多(Duo)数(Shu)载(Zai)流(Liu)子(Zi)Mask 掩(Yan)膜(Mo)板(Ban)，光(Guang)刻(Ke)板(Ban)Mask level 掩(Yan)模(Mo)序(Xu)号(Hao)Mask set 掩(Yan)模(Mo)组(Zu)Mass - action law质(Zhi)量(Liang)守(Shou)恒(Heng)定(Ding)律(Lv)Master-slave D flip-flop主(Zhu)从(Cong)D触(Chu)发(Fa)器(Qi)Matching 匹(Pi)配(Pei)Maxwell 麦(Mai)克(Ke)斯(Si)韦(Wei)Mean free path 平(Ping)均(Jun)自(Zi)由(You)程(Cheng)Meandered emitter junction梳(Shu)状(Zhuang)发(Fa)射(She)极(Ji)结(Jie)Mean time before failure (MTBF) 平(Ping)均(Jun)工(Gong)作(Zuo)时(Shi)间(Jian)Megeto - resistance 磁(Ci)阻(Zu)Mesa 台(Tai)面(Mian)MESFET-Metal Semiconductor金(Jin)属(Shu)半(Ban)导(Dao)体(Ti)FETMetallization 金(Jin)属(Shu)化(Hua)Microelectronic technique 微(Wei)电(Dian)子(Zi)技(Ji)术(Shu)Microelectronics 微(Wei)电(Dian)子(Zi)学(Xue)Millen indices 密(Mi)勒(Le)指(Zhi)数(Shu)Minority carrier 少(Shao)数(Shu)载(Zai)流(Liu)子(Zi)Misfit 失(Shi)配(Pei)Mismatching 失(Shi)配(Pei)Mobile ions 可(Ke)动(Dong)离(Li)子(Zi)Mobility 迁(Qian)移(Yi)率(Lv)Module 模(Mo)块(Kuai)Modulate 调(Diao)制(Zhi)Molecular crystal分(Fen)子(Zi)晶(Jing)体(Ti)Monolithic IC 单(Dan)片(Pian)IC MOSFET金(Jin)属(Shu)氧(Yang)化(Hua)物(Wu)半(Ban)导(Dao)体(Ti)场(Chang)效(Xiao)应(Ying)晶(Jing)体(Ti)管(Guan)Mos. Transistor(MOST )MOS. 晶(Jing)体(Ti)管(Guan)Multiplication 倍(Bei)增(Zeng)Modulator 调(Diao)制(Zhi)Multi-chip IC 多(Duo)芯(Xin)片(Pian)ICMulti-chip module(MCM) 多(Duo)芯(Xin)片(Pian)模(Mo)块(Kuai)Multiplication coefficient倍(Bei)增(Zeng)因(Yin)子(Zi)NNaked chip 未(Wei)封(Feng)装(Zhuang)的(De)芯(Xin)片(Pian)（裸(Luo)片(Pian)）Negative feedback 负(Fu)反(Fan)馈(Kui)Negative resistance 负(Fu)阻(Zu)Nesting 套(Tao)刻(Ke)Negative-temperature-coefficient 负(Fu)温(Wen)度(Du)系(Xi)数(Shu)Noise margin 噪(Zao)声(Sheng)容(Rong)限(Xian)Nonequilibrium 非(Fei)平(Ping)衡(Heng)Nonrolatile 非(Fei)挥(Hui)发(Fa)（易(Yi)失(Shi)）性(Xing)Normally off/on 常(Chang)闭(Bi)/开(Kai)Numerical analysis 数(Shu)值(Zhi)分(Fen)析(Xi)OOccupied band 满(Man)带(Dai)Officienay 功(Gong)率(Lv)Offset 偏(Pian)移(Yi)、失(Shi)调(Diao)On standby 待(Dai)命(Ming)状(Zhuang)态(Tai)Ohmic contact 欧(Ou)姆(Mu)接(Jie)触(Chu)Open circuit 开(Kai)路(Lu)Operating point 工(Gong)作(Zuo)点(Dian)Operating bias 工(Gong)作(Zuo)偏(Pian)置(Zhi)Operational amplifier (OPAMP)运(Yun)算(Suan)放(Fang)大(Da)器(Qi)Optical photon =photon 光(Guang)子(Zi)Optical quenching光(Guang)猝(Zuo)灭(Mie)Optical transition 光(Guang)跃(Yue)迁(Qian)Optical-coupled isolator光(Guang)耦(Zuo)合(He)隔(Ge)离(Li)器(Qi)Organic semiconductor有(You)机(Ji)半(Ban)导(Dao)体(Ti)Orientation 晶(Jing)向(Xiang)、定(Ding)向(Xiang)Outline 外(Wai)形(Xing)Out-of-contact mask非(Fei)接(Jie)触(Chu)式(Shi)掩(Yan)模(Mo)Output characteristic 输(Shu)出(Chu)特(Te)性(Xing)Output voltage swing 输(Shu)出(Chu)电(Dian)压(Ya)摆(Bai)幅(Fu)Overcompensation 过(Guo)补(Bu)偿(Chang)Over-current protection 过(Guo)流(Liu)保(Bao)护(Hu)Over shoot 过(Guo)冲(Chong)Over-voltage protection 过(Guo)压(Ya)保(Bao)护(Hu)Overlap 交(Jiao)迭(Die)Overload 过(Guo)载(Zai)Oscillator 振(Zhen)荡(Dang)器(Qi)Oxide 氧(Yang)化(Hua)物(Wu)Oxidation 氧(Yang)化(Hua)Oxide passivation 氧(Yang)化(Hua)层(Ceng)钝(Dun)化(Hua)PPackage 封(Feng)装(Zhuang)Pad 压(Ya)焊(Han)点(Dian)Parameter 参(Can)数(Shu)Parasitic effect 寄(Ji)生(Sheng)效(Xiao)应(Ying)Parasitic oscillation 寄(Ji)生(Sheng)振(Zhen)荡(Dang)Passination 钝(Dun)化(Hua)Passive component 无(Wu)源(Yuan)元(Yuan)件(Jian)Passive device 无(Wu)源(Yuan)器(Qi)件(Jian)Passive surface 钝(Dun)化(Hua)界(Jie)面(Mian)Parasitic transistor 寄(Ji)生(Sheng)晶(Jing)体(Ti)管(Guan)Peak-point voltage 峰(Feng)点(Dian)电(Dian)压(Ya)Peak voltage 峰(Feng)值(Zhi)电(Dian)压(Ya)Permanent-storage circuit 永(Yong)久(Jiu)存(Cun)储(Chu)电(Dian)路(Lu)Period 周(Zhou)期(Qi)Periodic table 周(Zhou)期(Qi)表(Biao)Permeable - base 可(Ke)渗(Shen)透(Tou)基(Ji)区(Qu)Phase-lock loop 锁(Suo)相(Xiang)环(Huan)Phase drift 相(Xiang)移(Yi)Phonon spectra 声(Sheng)子(Zi)谱(Pu)Photo conduction 光(Guang)电(Dian)导(Dao)Photo diode 光(Guang)电(Dian)二(Er)极(Ji)管(Guan)Photoelectric cell 光(Guang)电(Dian)池(Chi)Photoelectric effect 光(Guang)电(Dian)效(Xiao)应(Ying)Photoenic devices 光(Guang)子(Zi)器(Qi)件(Jian)Photolithographic process 光(Guang)刻(Ke)工(Gong)艺(Yi)(photo) resist （光(Guang)敏(Min)）抗(Kang)腐(Fu)蚀(Shi)剂(Ji)Pin 管(Guan)脚(Jiao)Pinch off 夹(Jia)断(Duan)Pinning of Fermi level 费(Fei)米(Mi)能(Neng)级(Ji)的(De)钉(Ding)扎(Zha)（效(Xiao)应(Ying)）Planar process 平(Ping)面(Mian)工(Gong)艺(Yi)Planar transistor 平(Ping)面(Mian)晶(Jing)体(Ti)管(Guan)Plasma 等(Deng)离(Li)子(Zi)体(Ti)Plezoelectric effect 压(Ya)电(Dian)效(Xiao)应(Ying)Poisson equation 泊(Bo)松(Song)方(Fang)程(Cheng)Point contact 点(Dian)接(Jie)触(Chu)Polarity 极(Ji)性(Xing)Polycrystal 多(Duo)晶(Jing)Polymer semiconductor聚(Ju)合(He)物(Wu)半(Ban)导(Dao)体(Ti)Poly-silicon 多(Duo)晶(Jing)硅(Gui)Potential (电(Dian))势(Shi)Potential barrier 势(Shi)垒(Lei)Potential well 势(Shi)阱(Zuo)Power dissipation 功(Gong)耗(Hao)Power transistor 功(Gong)率(Lv)晶(Jing)体(Ti)管(Guan)Preamplifier 前(Qian)置(Zhi)放(Fang)大(Da)器(Qi)Primary flat 主(Zhu)平(Ping)面(Mian)Principal axes 主(Zhu)轴(Zhou)Print-circuit board(PCB) 印(Yin)制(Zhi)电(Dian)路(Lu)板(Ban)Probability 几(Ji)率(Lv)Probe 探(Tan)针(Zhen)Process 工(Gong)艺(Yi)Propagation delay 传(Chuan)输(Shu)延(Yan)时(Shi)Pseudopotential method 膺(Zuo)势(Shi)发(Fa)Punch through 穿(Chuan)通(Tong)Pulse triggering/modulating 脉(Mai)冲(Chong)触(Chu)发(Fa)/调(Diao)制(Zhi)PulseWiden Modulator(PWM) 脉(Mai)冲(Chong)宽(Kuan)度(Du)调(Diao)制(Zhi)Punchthrough 穿(Chuan)通(Tong)Push-pull stage 推(Tui)挽(Wan)级(Ji)QQuality factor 品(Pin)质(Zhi)因(Yin)子(Zi)Quantization 量(Liang)子(Zi)化(Hua)Quantum 量(Liang)子(Zi)Quantum efficiency量(Liang)子(Zi)效(Xiao)应(Ying)Quantum mechanics 量(Liang)子(Zi)力(Li)学(Xue)Quasi – Fermi－level准(Zhun)费(Fei)米(Mi)能(Neng)级(Ji)Quartz 石(Shi)英(Ying)RRadiation conductivity 辐(Fu)射(She)电(Dian)导(Dao)率(Lv)Radiation damage 辐(Fu)射(She)损(Sun)伤(Shang)Radiation flux density 辐(Fu)射(She)通(Tong)量(Liang)密(Mi)度(Du)Radiation hardening 辐(Fu)射(She)加(Jia)固(Gu)Radiation protection 辐(Fu)射(She)保(Bao)护(Hu)Radiative - recombination辐(Fu)照(Zhao)复(Fu)合(He)Radioactive 放(Fang)射(She)性(Xing)Reach through 穿(Chuan)通(Tong)Reactive sputtering source 反(Fan)应(Ying)溅(Jian)射(She)源(Yuan)Read diode 里(Li)德(De)二(Er)极(Ji)管(Guan)Recombination 复(Fu)合(He)Recovery diode 恢(Hui)复(Fu)二(Er)极(Ji)管(Guan)Reciprocal lattice 倒(Dao)核(He)子(Zi)Recovery time 恢(Hui)复(Fu)时(Shi)间(Jian)Rectifier 整(Zheng)流(Liu)器(Qi)（管(Guan)）Rectifying contact 整(Zheng)流(Liu)接(Jie)触(Chu)Reference 基(Ji)准(Zhun)点(Dian) 基(Ji)准(Zhun) 参(Can)考(Kao)点(Dian)Refractive index 折(Zhe)射(She)率(Lv)Register 寄(Ji)存(Cun)器(Qi)Registration 对(Dui)准(Zhun)Regulate 控(Kong)制(Zhi) 调(Diao)整(Zheng)Relaxation lifetime 驰(Chi)豫(Yu)时(Shi)间(Jian)Reliability 可(Ke)靠(Kao)性(Xing)Resonance 谐(Xie)振(Zhen)Resistance 电(Dian)阻(Zu)Resistor 电(Dian)阻(Zu)器(Qi)Resistivity 电(Dian)阻(Zu)率(Lv)Regulator 稳(Wen)压(Ya)管(Guan)（器(Qi)）Relaxation 驰(Chi)豫(Yu)Resonant frequency共(Gong)射(She)频(Pin)率(Lv)Response time 响(Xiang)应(Ying)时(Shi)间(Jian)Reverse 反(Fan)向(Xiang)的(De)Reverse bias 反(Fan)向(Xiang)偏(Pian)置(Zhi)SSampling circuit 取(Qu)样(Yang)电(Dian)路(Lu)Sapphire 蓝(Lan)宝(Bao)石(Shi)（Al2O3）Satellite valley 卫(Wei)星(Xing)谷(Gu)Saturated current range电(Dian)流(Liu)饱(Bao)和(He)区(Qu)Saturation region 饱(Bao)和(He)区(Qu)Saturation 饱(Bao)和(He)的(De)Scaled down 按(An)比(Bi)例(Li)缩(Suo)小(Xiao)Scattering 散(San)射(She)Schockley diode 肖(Xiao)克(Ke)莱(Lai)二(Er)极(Ji)管(Guan)Schottky 肖(Xiao)特(Te)基(Ji)Schottky barrier 肖(Xiao)特(Te)基(Ji)势(Shi)垒(Lei)Schottky contact 肖(Xiao)特(Te)基(Ji)接(Jie)触(Chu)Schrodingen 薛(Xue)定(Ding)厄(E)Scribing grid 划(Hua)片(Pian)格(Ge)Secondary flat 次(Ci)平(Ping)面(Mian)Seed crystal 籽(Zi)晶(Jing)Segregation 分(Fen)凝(Ning)Selectivity 选(Xuan)择(Ze)性(Xing)Self aligned 自(Zi)对(Dui)准(Zhun)的(De)Self diffusion 自(Zi)扩(Kuo)散(San)Semiconductor 半(Ban)导(Dao)体(Ti)Semiconductor-controlled rectifier 可(Ke)控(Kong)硅(Gui)Sendsitivity 灵(Ling)敏(Min)度(Du)Serial 串(Chuan)行(Xing)/串(Chuan)联(Lian)Series inductance 串(Chuan)联(Lian)电(Dian)感(Gan)Settle time 建(Jian)立(Li)时(Shi)间(Jian)Sheet resistance 薄(Bao)层(Ceng)电(Dian)阻(Zu)Shield 屏(Ping)蔽(Bi)Short circuit 短(Duan)路(Lu)Shot noise 散(San)粒(Li)噪(Zao)声(Sheng)Shunt 分(Fen)流(Liu)Sidewall capacitance边(Bian)墙(Qiang)电(Dian)容(Rong) Signal 信(Xin)号(Hao)Silica glass 石(Shi)英(Ying)玻(Bo)璃(Li)Silicon 硅(Gui)Silicon carbide 碳(Tan)化(Hua)硅(Gui)Silicon dioxide (SiO2) 二(Er)氧(Yang)化(Hua)硅(Gui)Silicon Nitride(Si3N4) 氮(Dan)化(Hua)硅(Gui)Silicon On Insulator 绝(Jue)缘(Yuan)硅(Gui)Siliver whiskers 银(Yin)须(Xu)Simple cubic 简(Jian)立(Li)方(Fang)Single crystal 单(Dan)晶(Jing)Sink 沉(Chen)Skin effect 趋(Qu)肤(Fu)效(Xiao)应(Ying)Snap time 急(Ji)变(Bian)时(Shi)间(Jian)Sneak path 潜(Qian)行(Xing)通(Tong)路(Lu)Sulethreshold 亚(Ya)阈(Zuo)的(De)Solar battery/cell 太(Tai)阳(Yang)能(Neng)电(Dian)池(Chi)Solid circuit 固(Gu)体(Ti)电(Dian)路(Lu)Solid Solubility 固(Gu)溶(Rong)度(Du)Sonband 子(Zi)带(Dai)Source 源(Yuan)极(Ji)Source follower 源(Yuan)随(Sui)器(Qi)Space charge 空(Kong)间(Jian)电(Dian)荷(He)Specific heat(PT) 热(Re)Speed-power product 速(Su)度(Du)功(Gong)耗(Hao)乘(Cheng)积(Ji) Spherical 球(Qiu)面(Mian)的(De)Spin 自(Zi)旋(Xuan) Split 分(Fen)裂(Lie)Spontaneous emission 自(Zi)发(Fa)发(Fa)射(She)Spreading resistance扩(Kuo)展(Zhan)电(Dian)阻(Zu)Sputter 溅(Jian)射(She) Stacking fault 层(Ceng)错(Cuo)Static characteristic 静(Jing)态(Tai)特(Te)性(Xing)Stimulated emission 受(Shou)激(Ji)发(Fa)射(She)Stimulated recombination 受(Shou)激(Ji)复(Fu)合(He)Storage time 存(Cun)储(Chu)时(Shi)间(Jian)Stress 应(Ying)力(Li)Straggle 偏(Pian)差(Cha)Sublimation 升(Sheng)华(Hua)Substrate 衬(Chen)底(Di)Substitutional 替(Ti)位(Wei)式(Shi)的(De)Superlattice 超(Chao)晶(Jing)格(Ge)Supply 电(Dian)源(Yuan) Surface 表(Biao)面(Mian)Surge capacity 浪(Lang)涌(Yong)能(Neng)力(Li)Subscript 下(Xia)标(Biao)Switching time 开(Kai)关(Guan)时(Shi)间(Jian)Switch 开(Kai)关(Guan)TTailing 扩(Kuo)展(Zhan)Terminal 终(Zhong)端(Duan)Tensor 张(Zhang)量(Liang) Tensorial 张(Zhang)量(Liang)的(De)Thermal activation 热(Re)激(Ji)发(Fa)Thermal conductivity 热(Re)导(Dao)率(Lv)Thermal equilibrium 热(Re)平(Ping)衡(Heng)Thermal Oxidation 热(Re)氧(Yang)化(Hua)Thermal resistance 热(Re)阻(Zu)Thermal sink 热(Re)沉(Chen)Thermal velocity 热(Re)运(Yun)动(Dong)Thermoelectricpovoer 温(Wen)差(Cha)电(Dian)动(Dong)势(Shi)率(Lv)Thick-film technique 厚(Hou)膜(Mo)技(Ji)术(Shu)Thin-film hybrid IC薄(Bao)膜(Mo)混(Hun)合(He)集(Ji)成(Cheng)电(Dian)路(Lu)Thin-Film Transistor(TFT) 薄(Bao)膜(Mo)晶(Jing)体(Ti)Threshlod 阈(Zuo)值(Zhi)Thyistor 晶(Jing)闸(Zha)管(Guan)Transconductance 跨(Kua)导(Dao)Transfer characteristic 转(Zhuan)移(Yi)特(Te)性(Xing)Transfer electron 转(Zhuan)移(Yi)电(Dian)子(Zi)Transfer function 传(Chuan)输(Shu)函(Han)数(Shu) Transient 瞬(Shun)态(Tai)的(De)Transistor aging(stress) 晶(Jing)体(Ti)管(Guan)老(Lao)化(Hua)Transit time 渡(Du)越(Yue)时(Shi)间(Jian)Transition 跃(Yue)迁(Qian)Transition-metal silica 过(Guo)度(Du)金(Jin)属(Shu)硅(Gui)化(Hua)物(Wu)Transition probability 跃(Yue)迁(Qian)几(Ji)率(Lv)Transition region 过(Guo)渡(Du)区(Qu)Transport 输(Shu)运(Yun) Transverse 横(Heng)向(Xiang)的(De)Trap 陷(Xian)阱(Zuo) Trapping 俘(Fu)获(Huo)Trapped charge 陷(Xian)阱(Zuo)电(Dian)荷(He)Triangle generator 三(San)角(Jiao)波(Bo)发(Fa)生(Sheng)器(Qi)Triboelectricity 摩(Mo)擦(Ba)电(Dian)Trigger 触(Chu)发(Fa)Trim 调(Diao)配(Pei) 调(Diao)整(Zheng)Triple diffusion 三(San)重(Zhong)扩(Kuo)散(San)Truth table 真(Zhen)值(Zhi)表(Biao)Tolerahce 容(Rong)差(Cha)Tunnel(ing) 隧(Sui)道(Dao)（穿(Chuan)）Tunnel current 隧(Sui)道(Dao)电(Dian)流(Liu)Turn over 转(Zhuan)折(Zhe)Turn - off time 关(Guan)断(Duan)时(Shi)间(Jian)UUltraviolet 紫(Zi)外(Wai)的(De)Unijunction 单(Dan)结(Jie)的(De)Unipolar 单(Dan)极(Ji)的(De)Unit cell 原(Yuan)（元(Yuan)）胞(Bao)Unity-gain frequency 单(Dan)位(Wei)增(Zeng)益(Yi)频(Pin)率(Lv)Unilateral-switch单(Dan)向(Xiang)开(Kai)关(Guan)VVacancy 空(Kong)位(Wei) Vacuum 真(Zhen)空(Kong)Valence(value) band 价(Jia)带(Dai) Value band edge 价(Jia)带(Dai)顶(Ding)Valence bond 价(Jia)键(Jian) Vapour phase 汽(Qi)相(Xiang)Varactor 变(Bian)容(Rong)管(Guan) Varistor 变(Bian)阻(Zu)器(Qi)Vibration 振(Zhen)动(Dong) Voltage 电(Dian)压(Ya)WWafer 晶(Jing)片(Pian)Wave equation 波(Bo)动(Dong)方(Fang)程(Cheng)Wave guide 波(Bo)导(Dao)Wave number 波(Bo)数(Shu)Wave-particle duality 波(Bo)粒(Li)二(Er)相(Xiang)性(Xing)Wear-out 烧(Shao)毁(Hui)Wire routing 布(Bu)线(Xian)Work function 功(Gong)函(Han)数(Shu)Worst-case device 最(Zui)坏(Huai)情(Qing)况(Kuang)器(Qi)件(Jian)YYield 成(Cheng)品(Pin)率(Lv)ZZener breakdown 齐(Qi)纳(Na)击(Ji)穿(Chuan)Zone melting 区(Qu)熔(Rong)法(Fa)感(Gan)恩(En)赞(Zan)赏(Shang)，为(Wei)中(Zhong)国(Guo)芯(Xin)加(Jia)油(You)！大(Da)家(Jia)怎(Zen)么(Me)看(Kan)？快(Kuai)来(Lai)留(Liu)言(Yan)交(Jiao)流(Liu)吧(Ba)^_^如(Ru)侵(Qin)删(Shan)丨(Zuo)如(Ru)转(Zhuan)注(Zhu)【原(Yuan)创(Chuang)不(Bu)易(Yi)，记(Ji)得(De)转(Zhuan)发(Fa)】半(Ban)导(Dao)体(Ti)人(Ren)临(Lin)走(Zou)记(Ji)得(De)点(Dian)下(Xia)方(Fang)拇(Mu)指(Zhi)留(Liu)下(Xia)脚(Jiao)印(Yin)。如(Ru)觉(Jue)文(Wen)章(Zhang)不(Bu)错(Cuo)，留(Liu)言(Yan)评(Ping)论(Lun)，转(Zhuan)发(Fa)更(Geng)多(Duo)朋(Peng)友(You)，传(Chuan)递(Di)咱(Zan)半(Ban)导(Dao)体(Ti)人(Ren)的(De)观(Guan)点(Dian)。智(Zhi)能(Neng)推(Tui)荐(Jian)：80页(Ye)PPT看(Kan)懂(Dong)半(Ban)导(Dao)体(Ti)行(Xing)业(Ye)一(Yi)颗(Ke)芯(Xin)片(Pian)，咋(Zha)就(Jiu)这(Zhe)么(Me)难(Nan)造(Zao)？ |转(Zhuan)疯(Feng)了(Liao)中(Zhong)国(Guo)半(Ban)导(Dao)体(Ti)困(Kun)境(Jing)！这(Zhe)篇(Pian)讲(Jiang)全(Quan)了(Liao)！中(Zhong)国(Guo)芯(Xin)酸(Suan)往(Wang)事(Shi)！|戴(Dai)老(Lao)板(Ban)制(Zhi)裁(Cai)晋(Jin)华(Hua)背(Bei)后(Hou)：中(Zhong)国(Guo)尚(Shang)未(Wei)掌(Zhang)控(Kong)的(De)核(He)心(Xin)技(Ji)术(Shu)清(Qing)单(Dan)福(Fu)利(Li)下(Xia)载(Zai)：电(Dian)子(Zi)技(Ji)术(Shu)全(Quan)套(Tao)资(Zi)料(Liao)，工(Gong)程(Cheng)师(Shi)必(Bi)看(Kan)！制(Zhi)裁(Cai)晋(Jin)华(Hua)背(Bei)后(Hou)：中(Zhong)国(Guo)尚(Shang)未(Wei)掌(Zhang)控(Kong)的(De)核(He)心(Xin)技(Ji)术(Shu)清(Qing)单(Dan)！这(Zhe)可(Ke)能(Neng)是(Shi)最(Zui)全(Quan)的(De)，中(Zhong)国(Guo)尚(Shang)未(Wei)掌(Zhang)控(Kong)的(De)核(He)心(Xin)技(Ji)术(Shu)清(Qing)单(Dan)（芯(Xin) 榜(Bang)中(Zhong)国(Guo)半(Ban)导(Dao)体(Ti)排(Pai)行(Xing)榜(Bang)！ 添(Tian) 加(Jia)芯(Xin) 片(Pian) 圈(Quan)芯(Xin)片(Pian)半(Ban)导(Dao)体(Ti)人(Ren)的(De)圈(Quan)子(Zi)！添(Tian) 加(Jia)区(Qu)块(Kuai)链(Lian)首(Shou)席(Xi)区(Qu)块(Kuai)链(Lian)从(Cong)入(Ru)门(Men)到(Dao)精(Jing)通(Tong)。在(Zai)这(Zhe)里(Li)，憋(Bie)大(Da)招(Zhao)！添(Tian) 加(Jia)1芯(Xin) 局(Ju)读(Du)懂(Dong)半(Ban)导(Dao)体(Ti)，看(Kan)懂(Dong)芯(Xin)片(Pian)！添(Tian) 加(Jia)1个(Ge)赞(Zan)，工(Gong)资(Zi)老(Lao)板(Ban)加(Jia)1元(Yuan)
“东湖南路上游玩，经核实，双峰县的九峰水库位于荷叶镇，是一座库容128.33万方的小一型水库，目前大坝安全可控，经巡查未发生任何管涌等险情。该账号编造虚假信息，将岳阳某县改为娄底市双峰县，并发布到网上。网信部门已将谣言线索移送公安机关，依法依规打击处理。...片《末代皇帝》蓝光双语双字加长版迅雷下载冲电影天堂
13秒80太高暂时只能仰望