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Angelababy强势复出！人脸变形脱相，网友：终于走向国际了原创2024-01-13 13:47·可可可327隔屏问好，我是可可可327。如何用一句话来评价Angelababy？许多网友是这么说的：“除了美貌一无是处。”作为内娱顶级神颜之一，Angelababy的美貌是毋庸置疑的。然而，最近对于她的一组照片流出，和之前的形象却形成了鲜明对比。网友们纷纷表示难以置信。“毁容式”近照曝光！前段时间，Angelababy登上新加坡版杂志封面。在这份杂志中，她展现了全新的造型然而，伴随而来的却是网友对她外貌的质疑。只见照片中的Angelababy两颊瘦削、眼窝凹陷，手臂更是瘦到几乎没有一丝赘肉。尤其是她的眼睛下垂，眼皮褶皱十分厚重。即便是戴着墨镜，也挡不住她流露出的浓浓沧桑和疲倦。让人很难辨认出这是曾经被称为“天使面孔魔鬼身材”的女神。这一变化，让不少网友都感慨Angelababy瘦脱相了。还有人觉得Angelababy的眼神变了，有种“厌世”的感觉。甚至有人戏谑地说她看起来像一个五六十岁的女人。但不少网友都说Angelababy是“活该”，还有的表示就这样的人还想曲线复出？曾经那个用“美貌杀人”的Angelababy，似乎消失了……现在的她“颜值崩塌”，也没有了往日的神采飞扬。人生啊，处处充满了戏剧。走错了路，直接断送了自己的演艺事业。真是令人唏嘘不已。时间回到2023年9月，作为爱豆顶流的Lisa在社交平台宣布参加疯马秀。这一消息迅速引发全网的广泛关注。疯马秀，作为法国艳舞团“疯马俱乐部”的著名表演节目，以luo舞而知名。因此Lisa的参与引起了争议，网友们对此感到痛心和失望，认为此举等同于自甘堕落。但在舆论风波中，Lisa依旧义无反顾的去参加了疯马秀。当然了，Lisa只是一个国外明星，她的行为自由不受我们干涉。可令人大跌眼镜的是，Angelababy和另一位女星张嘉倪竟然现身“疯马秀”现场。这一举动让众多网友感到震惊，纷纷痛斥她们。而作为顶流女星的Angelababy，显然吸引了更多的“火力”。不仅个人账号和工作室的评论完全沦陷了，还有网友挖出了她的“黑料”，如：限韩令时去韩国看演唱会，日本核废水舆论最大时去日本旅游……如今又在Lisa“疯马秀”闹得沸沸扬扬时，依旧我行我素去看秀。频繁的反向操作，究竟在干什么？但不管是有意为之还是无意之举，在“疯马秀”事件后Angelababy终是走到“末路”。综艺被抵制，被央视视频除名，多平台账号遭到禁言，形同「软封杀」。有意思的是，前夫黄晓明在节目上说了这么一句话：“作为公众人物，一定要规范自己的行为。”黄晓明在风口浪尖的发言被疑为对Angelababy的嘲讽，但也有人认为他并没有此意。有爆料称，在Angelababy遇到问题后，黄晓明曾多次伸出援手。夫妻一场，想必黄晓明也不愿看到现在的局面。Angelababy靠黄晓明上位？有人说：没有黄晓明，Angelababy不会拥有如今的地位。的确，回看Angelababy的成名之路，绝对少不了黄晓明的力捧。2009年以前，Angelababy还是一名18线嫩模。最好的工作，是给周杰伦当伴舞。然而2009年认识黄晓明后，她开始扶摇直上。拍摄了许多高质量制作，如电影《全城热恋》和《全球热恋》。就连大牌的广告都拿下许多，可谓是日进斗金。2011年，对于Angelababy来说是一个标志性的年份。她首次进入中国名人收入排行榜，位列第88位。然而，这仅仅是她事业腾飞的开始。随后几年里，Angelababy与大牌明星和知名品牌频繁合作。其中《奔跑吧兄弟》更是将她推向了全新的高度，使她成为家喻户晓的明星。2014年，当Angelababy再次登上福布斯中国名人榜时，她的排名已经跃升至第55位。一年一个新台阶，可谓是应了那句广告词：“某步，从未止步。”Angelababy成为一个顶流的代表人物，资源和咖位资本相继而来。2015年，黄晓明更是斥巨资给了Angelababy一场世纪婚礼。婚后的Angelababy，已不能同日而语。她的事业版图快速扩张，开始脱离黄晓明的掌控。慢慢地，俩人同框秀恩爱的画面越来越少。直到2022年1月28日，一则离婚声明结束了两人7年的婚姻生活。可自从离开黄晓明后，Angelababy似乎又回到了“怪圈”。德不配位，必有灾殃！Angelababy曾参加了一档节目叫《奇遇人生》。在一个饭店里，有人问老板娘对Angelababy印象如何？老板娘说的是：“就记得她老公很爱她。”但Angelababy不喜欢听到这些，她说希望别人记住自己是因为作品。这话本是没错的，但可惜的是她的言行并不一致。她曾多次表示演员要敬业和自律，可结果呢？和钟汉良合作《孤芳不自赏》，为观众贡献了一波“P图”演技。在《建党伟业》中，靠眼药水完成了一段震惊刘德华的哭戏。《创业时代》里是真的美，但演技也是真的差，尬的很。出道这么多年，Angelababy的演技一直备受诟病。但她似乎并未专注于提升自己的演艺，而是把重心放在综艺上。过去，因黄晓明的关系，这些问题被“忽视”。然而，与黄晓明离婚后，她不仅难以接到优秀剧本，时尚资源也大幅减少，事业陷入困境。本就人气下滑的她，还参与「疯马秀」事件，彻底点燃了大家的怒火。作为公众人物，不以身作则，违反了艺术从业者法律法规，只能说自食其果。“说自己不靠男人”的Angelababy，终于迎来退潮。当初多么豪横，如今多么狼狈。也印证了一句话：德不配位，必有灾殃。最后，也奉劝明星艺人们：台上演好戏，台下做好人！
2024年12月22日，大学生团队成员还和盐都区“星火”计划的成员们进行了交流，据悉，为推动草莓产业发展，筹备2025年第10届世界草莓大会，盐都区组织21名乡村青年人才，跟班学习草莓全周期生产技术、园区管理、产物销售，学成后服务草莓产业发展，带动农民共同致富。
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去(Qu)江(Jiang)苏(Su)南(Nan)京(Jing)玩(Wan)了(Liao)一(Yi)圈(Quan)回(Hui)来(Lai)，谈(Tan)谈(Tan)我(Wo)的(De)见(Jian)闻(Wen)和(He)经(Jing)历(Li)首(Shou)发(Fa)2024-01-03 03:06·乐(Le)观(Guan)杨(Yang)梅(Mei)8f3p标(Biao)题(Ti)：“游(You)历(Li)江(Jiang)苏(Su)南(Nan)京(Jing)的(De)所(Suo)见(Jian)所(Suo)闻(Wen)及(Ji)经(Jing)历(Li)分(Fen)享(Xiang)”在(Zai)我(Wo)近(Jin)期(Qi)的(De)旅(Lv)程(Cheng)中(Zhong)，选(Xuan)择(Ze)了(Liao)前(Qian)往(Wang)江(Jiang)苏(Su)南(Nan)京(Jing)游(You)玩(Wan)。这(Zhe)趟(Tang)旅(Lv)程(Cheng)不(Bu)仅(Jin)是(Shi)一(Yi)次(Ci)简(Jian)单(Dan)的(De)行(Xing)程(Cheng)安(An)排(Pai)，更(Geng)是(Shi)一(Yi)次(Ci)深(Shen)入(Ru)了(Liao)解(Jie)当(Dang)地(Di)文(Wen)化(Hua)和(He)历(Li)史(Shi)的(De)经(Jing)历(Li)。南(Nan)京(Jing)，一(Yi)个(Ge)充(Chong)满(Man)活(Huo)力(Li)和(He)魅(Zuo)力(Li)的(De)城(Cheng)市(Shi)，无(Wu)论(Lun)是(Shi)其(Qi)丰(Feng)富(Fu)的(De)历(Li)史(Shi)底(Di)蕴(Yun)还(Huan)是(Shi)现(Xian)代(Dai)的(De)发(Fa)展(Zhan)，都(Du)深(Shen)深(Shen)吸(Xi)引(Yin)了(Liao)我(Wo)的(De)注(Zhu)意(Yi)。我(Wo)抵(Di)达(Da)南(Nan)京(Jing)的(De)那(Na)一(Yi)刻(Ke)起(Qi)，就(Jiu)被(Bei)其(Qi)独(Du)特(Te)的(De)氛(Fen)围(Wei)所(Suo)打(Da)动(Dong)。首(Shou)先(Xian)吸(Xi)引(Yin)我(Wo)的(De)是(Shi)夫(Fu)子(Zi)庙(Miao)，这(Zhe)座(Zuo)古(Gu)老(Lao)而(Er)又(You)充(Chong)满(Man)商(Shang)业(Ye)活(Huo)力(Li)的(De)地(Di)方(Fang)，传(Chuan)承(Cheng)了(Liao)大(Da)量(Liang)的(De)历(Li)史(Shi)文(Wen)化(Hua)。漫(Man)步(Bu)在(Zai)夫(Fu)子(Zi)庙(Miao)的(De)小(Xiao)巷(Xiang)中(Zhong)，仿(Fang)佛(Fo)穿(Chuan)越(Yue)了(Liao)时(Shi)光(Guang)隧(Sui)道(Dao)，感(Gan)受(Shou)到(Dao)了(Liao)古(Gu)老(Lao)文(Wen)化(Hua)与(Yu)现(Xian)代(Dai)生(Sheng)活(Huo)的(De)和(He)谐(Xie)融(Rong)合(He)。在(Zai)南(Nan)京(Jing)，我(Wo)也(Ye)深(Shen)刻(Ke)领(Ling)略(Lue)到(Dao)了(Liao)中(Zhong)华(Hua)文(Wen)明(Ming)的(De)伟(Wei)大(Da)和(He)悠(You)久(Jiu)。夫(Fu)子(Zi)庙(Miao)、明(Ming)孝(Xiao)陵(Ling)、中(Zhong)山(Shan)陵(Ling)等(Deng)历(Li)史(Shi)遗(Yi)迹(Ji)，都(Du)展(Zhan)现(Xian)了(Liao)中(Zhong)国(Guo)悠(You)久(Jiu)的(De)历(Li)史(Shi)底(Di)蕴(Yun)和(He)宏(Hong)伟(Wei)的(De)建(Jian)筑(Zhu)艺(Yi)术(Shu)。特(Te)别(Bie)是(Shi)在(Zai)中(Zhong)山(Shan)陵(Ling)，我(Wo)对(Dui)中(Zhong)国(Guo)近(Jin)现(Xian)代(Dai)历(Li)史(Shi)有(You)了(Liao)更(Geng)深(Shen)入(Ru)的(De)了(Liao)解(Jie)，感(Gan)受(Shou)到(Dao)了(Liao)革(Ge)命(Ming)先(Xian)烈(Lie)的(De)伟(Wei)大(Da)精(Jing)神(Shen)。除(Chu)了(Liao)历(Li)史(Shi)文(Wen)化(Hua)，南(Nan)京(Jing)的(De)现(Xian)代(Dai)魅(Zuo)力(Li)也(Ye)令(Ling)人(Ren)难(Nan)忘(Wang)。夜(Ye)晚(Wan)的(De)玄(Xuan)武(Wu)湖(Hu)畔(Pan)灯(Deng)火(Huo)辉(Hui)煌(Huang)，美(Mei)丽(Li)的(De)景(Jing)色(Se)让(Rang)我(Wo)感(Gan)受(Shou)到(Dao)了(Liao)城(Cheng)市(Shi)的(De)活(Huo)力(Li)和(He)繁(Fan)荣(Rong)。步(Bu)行(Xing)在(Zai)长(Chang)江(Jiang)大(Da)桥(Qiao)上(Shang)，俯(Fu)瞰(Zuo)着(Zhuo)宽(Kuan)阔(Kuo)的(De)江(Jiang)面(Mian)和(He)城(Cheng)市(Shi)的(De)繁(Fan)华(Hua)景(Jing)象(Xiang)，让(Rang)我(Wo)深(Shen)深(Shen)体(Ti)会(Hui)到(Dao)了(Liao)南(Nan)京(Jing)这(Zhe)座(Zuo)城(Cheng)市(Shi)的(De)现(Xian)代(Dai)发(Fa)展(Zhan)与(Yu)活(Huo)力(Li)。在(Zai)这(Zhe)次(Ci)旅(Lv)行(Xing)中(Zhong)，我(Wo)也(Ye)结(Jie)识(Shi)了(Liao)许(Xu)多(Duo)热(Re)情(Qing)友(You)好(Hao)的(De)当(Dang)地(Di)人(Ren)。他(Ta)们(Men)向(Xiang)我(Wo)介(Jie)绍(Shao)了(Liao)南(Nan)京(Jing)的(De)美(Mei)食(Shi)文(Wen)化(Hua)，让(Rang)我(Wo)品(Pin)尝(Chang)了(Liao)许(Xu)多(Duo)道(Dao)地(Di)的(De)特(Te)色(Se)小(Xiao)吃(Chi)，如(Ru)鸭(Ya)血(Xue)粉(Fen)丝(Si)汤(Tang)、金(Jin)陵(Ling)鸭(Ya)血(Xue)粉(Fen)丝(Si)、夫(Fu)子(Zi)庙(Miao)小(Xiao)笼(Long)包(Bao)等(Deng)。这(Zhe)些(Xie)美(Mei)食(Shi)不(Bu)仅(Jin)开(Kai)拓(Tuo)了(Liao)我(Wo)的(De)味(Wei)蕾(Lei)，也(Ye)让(Rang)我(Wo)更(Geng)加(Jia)了(Liao)解(Jie)了(Liao)南(Nan)京(Jing)人(Ren)的(De)生(Sheng)活(Huo)方(Fang)式(Shi)和(He)对(Dui)美(Mei)食(Shi)的(De)热(Re)爱(Ai)。而(Er)最(Zui)让(Rang)我(Wo)印(Yin)象(Xiang)深(Shen)刻(Ke)的(De)是(Shi)南(Nan)京(Jing)人(Ren)民(Min)的(De)热(Re)情(Qing)和(He)友(You)善(Shan)。无(Wu)论(Lun)是(Shi)在(Zai)景(Jing)点(Dian)还(Huan)是(Shi)街(Jie)头(Tou)巷(Xiang)尾(Wei)，每(Mei)一(Yi)个(Ge)遇(Yu)到(Dao)的(De)当(Dang)地(Di)人(Ren)都(Du)愿(Yuan)意(Yi)帮(Bang)助(Zhu)我(Wo)，为(Wei)我(Wo)提(Ti)供(Gong)指(Zhi)引(Yin)和(He)建(Jian)议(Yi)。他(Ta)们(Men)的(De)热(Re)情(Qing)让(Rang)我(Wo)感(Gan)受(Shou)到(Dao)了(Liao)这(Zhe)座(Zuo)城(Cheng)市(Shi)的(De)人(Ren)文(Wen)魅(Zuo)力(Li)，也(Ye)使(Shi)我(Wo)深(Shen)信(Xin)友(You)好(Hao)互(Hu)助(Zhu)是(Shi)中(Zhong)国(Guo)传(Chuan)统(Tong)文(Wen)化(Hua)的(De)重(Zhong)要(Yao)组(Zu)成(Cheng)部(Bu)分(Fen)。这(Zhe)次(Ci)南(Nan)京(Jing)之(Zhi)行(Xing)不(Bu)仅(Jin)让(Rang)我(Wo)领(Ling)略(Lue)到(Dao)了(Liao)这(Zhe)座(Zuo)城(Cheng)市(Shi)的(De)魅(Zuo)力(Li)，更(Geng)让(Rang)我(Wo)深(Shen)入(Ru)了(Liao)解(Jie)了(Liao)中(Zhong)国(Guo)文(Wen)化(Hua)和(He)历(Li)史(Shi)。在(Zai)南(Nan)京(Jing)的(De)每(Mei)一(Yi)处(Chu)，都(Du)留(Liu)下(Xia)了(Liao)我(Wo)美(Mei)好(Hao)的(De)回(Hui)忆(Yi)和(He)宝(Bao)贵(Gui)的(De)经(Jing)历(Li)。我(Wo)相(Xiang)信(Xin)这(Zhe)次(Ci)旅(Lv)程(Cheng)将(Jiang)成(Cheng)为(Wei)我(Wo)人(Ren)生(Sheng)中(Zhong)不(Bu)可(Ke)磨(Mo)灭(Mie)的(De)一(Yi)段(Duan)记(Ji)忆(Yi)，也(Ye)希(Xi)望(Wang)能(Neng)够(Gou)将(Jiang)这(Zhe)份(Fen)美(Mei)好(Hao)传(Chuan)递(Di)给(Gei)更(Geng)多(Duo)的(De)人(Ren)，让(Rang)更(Geng)多(Duo)的(De)人(Ren)来(Lai)感(Gan)受(Shou)这(Zhe)座(Zuo)城(Cheng)市(Shi)的(De)魅(Zuo)力(Li)和(He)中(Zhong)国(Guo)文(Wen)化(Hua)的(De)博(Bo)大(Da)精(Jing)深(Shen)。
ganjinshoucang，bandaotiyixieshuyudezhongyingwenduizhao2020-05-21 15:59·dianzixinbakechangyongbandaotizhongyingduizhaobiaolizizhuruji ion implanterLSSlilun Lindhand Scharff and Schiott theory，youcheng“linhande-sikafu-sigaotelilun”。goudaoxiaoying channeling effectshechengfenbu range distributionshendufenbu depth distributiontouyingshecheng projected rangezuzhijuli stopping distancezuzhibenling stopping powerbiaozhunzuzhijiemian standard stopping cross sectiontuihuo annealingjihuoneng activation energydengwentuihuo isothermal annealingjiguangtuihuo laser annealingyingliganshengquexian stress-induced defectzeyouquxiang preferred orientationzhibangongyi mask-making technologytuxingjibian pattern distortionchusuo first minificationjingsuo final minificationmuban master maskgeban chromium plateganban dry platerujiaoban emulsion platetoumingban see-through plategaofenbianlvban high resolution plate, HRPchaoweiliganban plate forultra-microminiaturizationyanmo maskyanmoduizhun mask alignmentduizhunjingdu alignment precisionguangkejiao photoresist，youcheng“guangzhikangshiji”。fuxingguangkejiao negative photoresistzhengxingguangkejiao positive photoresistwujiguangkejiao inorganic resistduocengguangkejiao multilevel resistdianzishuguangkejiao electron beam resistXshexianguangkejiao X-ray resistshuaxi scrubbingshuaijiao spinningtujiao photoresist coatinghouhong postbakingguangke photolithographyXshexianguangke X-ray lithographydianzishuguangke electron beam lithographylizishuguangke ion beam lithographyshenziwaiguangke deep-UV lithographyguangkeji mask alignertouyingguangkeji projection mask alignerpuguang exposurejiechushipuguangfa contact exposure methodjiejinshipuguangfa proximity exposure methodguangxuetouyingpuguangfa optical projection exposure methoddianzishupuguangxitong electron beam exposure systemfenbuzhongfuxitong step-and-repeat systemxianying developmentxiankuan linewidthqujiao stripping of photoresistyanghuaqujiao removing of photoresist by oxidationdenglizi［ti］qujiao removing of photoresist by plasmakeshi etchingganfakeshi dry etchingfanyinglizikeshi reactive ion etching, RIEgexiangtongxingkeshi isotropic etchinggexiangyixingkeshi anisotropic etchingfanyingjianshekeshi reactive sputter etchinglizixi ion beam milling，youcheng“lizimoxiao”。denglizi［ti］keshi plasma etchingzuanshi undercuttingbaolijishu lift-off technology，youcheng“futuogongyi”。zhongdianjiance endpoint monitoringjinshuhua metallizationhulian interconnectionduocengjinshuhua multilevel metallizationdianqianzuo electromigrationhuiliu reflowlinguiboli phosphorosilicate glasspenglinguiboli boron-phosphorosilicate glassdunhuagongyi passivation technologyduocengjiezhidunhua multilayer dielectric passivationhuapian scribingdianzishuqiepian electron beam slicingshaojie sinteringyinya indentationreyahan thermocompression bondingrechaoshenghan thermosonic bondinglenghan cold weldingdianhan spot weldingqiuhan ball bondingxiehan wedge bondingneiyinxianhanjie inner lead bondingwaiyinxianhanjie outer lead bondingliangshiyinxian beam leadzhuangjiagongyi mounting technologyfuzhuo adhesionfengzhuang packagingjinshufengzhuang metallic packagingtaocifengzhuang ceramic packagingbianpingfengzhuang flat packagingsufeng plastic packagebolifengzhuang glass packagingweifengzhuang micropackaging，youcheng“weizuzhuang”。guanke packageguanxin dieyinxianjianhe lead bondingyinxiankuangshijianhe lead frame bondingdaishizidongjianhe tape automated bonding, TABjiguangjianhe laser bondingchaoshengjianhe ultrasonic bondinghongwaijianhe infrared bondingweidianzicidiandajihe（anshouzimushunxupaixu）AAbrupt junction tubianjieAccelerated testing jiasushiyanAcceptor shouzhuAcceptor atom shouzhuyuanziAccumulation jilei、duijiAccumulating contact jileijiechuAccumulation region jileiquAccumulation layer jileicengActive region youyuanquActive component youyuanyuanActive device youyuanqijianActivation jihuoActivation energy jihuonengActive region youyuan（fangda）quAdmittance daonaAllowed band yundaiAlloy-junction devicehejinjieqijianAluminum(Aluminium) lvAluminum – oxide lvyanghuawuAluminum passivation lvdunhuaAmbipolar shuangjideAmbient temperature huanjingwenduAmorphous wudingxingde，feijingtideAmplifier gongfang kuoyinqi fangdaqiAnalogue(Analog) comparator monibijiaoqiAngstrom aiAnneal tuihuoAnisotropic gexiangyixingdeAnode yangjiArsenic (AS) shenAuger exieAuger process exieguochengAvalanche xuebengAvalanche breakdown xuebengjichuanAvalanche excitationxuebengjifaBBackground carrier bendizailiuziBackground doping bendichanzaBackward fanxiangBackward bias fanxiangpianzhiBallasting resistor zhengliudianzuBall bond qiuxingjianheBand nengdaiBand gap nengdaijianxiBarrier shileiBarrier layer shileicengBarrier width shileikuanduBase jijiBase contact jiqujiechuBase stretching jiqukuozhanxiaoyingBase transit time jiquduyueshijianBase transport efficiencyjiqushuyunxishuBase-width modulationjiqukuandudiaozhiBasis vector jishiBias pianzhiBilateral switch shuangxiangkaiguanBinary code erjinzhidaimaBinary compound semiconductor eryuanhuahewubandaotiBipolar shuangjixingdeBipolar Junction Transistor (BJT)shuangjijingtiguanBloch buluoheBlocking band zudangnengdaiBlocking contact zudangjiechuBody - centered tixinlifangBody-centred cubic structure tilixinjiegouBoltzmann boerzimanBond jian、jianheBonding electron jiadianziBonding pad jianhedianBootstrap circuit zijudianluBootstrapped emitter follower zijushejigensuiqiBoron pengBorosilicate glass pengguiboliBoundary condition bianjietiaojianBound electron shufudianziBreadboard moniban、shiyanbanBreak down jichuanBreak over zhuanzheBrillouin buliyuanBrillouin zone buliyuanquBuilt-in neijiandeBuild-in electric field neijiandianchangBulk ti/tineiBulk absorption tixishouBulk generation tichanshengBulk recombination tifuheBurn - in laohuaBurn out shaohuiBuried channel maigouBuried diffusion region yinmaikuosanquCCan waikeCapacitance dianrongCapture cross section fuhuojiemianCapture carrier fuhuozailiuziCarrier zailiuzi、zaiboCarry bit jinweiweiCarry-in bit jinweishuruCarry-out bit jinweishuchuCascade jilianCase guankeCathode yinjiCenter zhongxinCeramic taoci（de）Channel goudaoChannel breakdown goudaojichuanChannel current goudaodianliuChannel doping goudaochanzaChannel shortening goudaosuoduanChannel width goudaokuanduCharacteristic impedance tezhengzukangCharge dianhe、chongdianCharge-compensation effects dianhebuchangxiaoyingCharge conservation dianheshouhengCharge neutrality condition dianzhongxingtiaojianChargedrive/exchange/sharing/transfer/storage dianhequdong/jiaohuan/gongxiang/zhuanyi/cunchuChemmical etching huaxuefushifaChemically-Polish huaxuepaoguangChemmically-Mechanically Polish (CMP) huaxuejixiepaoguangChip xinpianChip yield xinpianchengpinlvClamped zuoweiClamping diode zuoweierjiguanCleavage plane jielimianClock rate shizhongpinlvClock generator shizhongfashengqiClock flip-flop shizhongchufaqiClose-packed structure miduijijiegouClose-loop gain bihuanzengyiCollector jidianjiCollision pengzhuangCompensated OP-AMP buchangyunfangCommon-base/collector/emitter connection gongjiji/jidianji/fashejilianjieCommon-gate/drain/source connection gongzha/lou/yuanlianjieCommon-mode gain gongmozengyiCommon-mode input gongmoshuruCommon-mode rejection ratio (CMRR) gongmoyizhibiCompatibility jianrongxingCompensation buchangCompensated impurities buchangzazhiCompensated semiconductor buchangbandaotiComplementary Darlington circuit hubudalindundianluComplementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)hubujinshuyanghuawubandaotichangxiaoyingjingtiguanComplementary error function yuwuchahanshuComputer-aided design (CAD)/test(CAT)/manufacture(CAM) jisuanjifuzhusheji/ ceshi /zhizaoCompound Semiconductor huahewubandaotiConductance diandaoConduction band (edge) daodai(di)Conduction level/state daodaitaiConductor daotiConductivity diandaolvConfiguration zutaiConlomb kulunConpled Configuration Devices jiegouzutaiConstants wulichangshuConstant energy surface dengnengmianConstant-source diffusionhengdingyuankuosanContact jiechuContamination zhiwuContinuity equation lianxuxingfangchengContact hole jiechukongContact potential jiechudianshiContinuity condition lianxuxingtiaojianContra doping fanchanzaControlled shoukongdeConverter zhuanhuanqiConveyer chuanshuqiCopper interconnection system tonghulianxitongCouping zuoheCovalent gongjiedeCrossover kuajiaoCritical linjiedeCrossunder chuanjiaoCruciblezuozuoCrystaldefect/face/orientation/lattice jingtiquexian/jingmian/jingxiang/jinggeCurrent density dianliumiduCurvature qulvCut off jiezhiCurrent drift/dirve/sharing dianliupiaoyi/qudong/gongxiangCurrent Sense dianliuquyangCurvature wanquCustom integrated circuit dingzhijichengdianluCylindrical zhumiandeCzochralshicrystal zhilidanjingCzochralski technique qiekelaosijijishu（CzfazhilajingtiJ）DDangling bonds xuanguajianDark current andianliuDead time kongzaishijianDebye length debaichangduDe.broglie debuluoyiDecderate jiansuDecibel (dB) fenbeiDecode yimaDeep acceptor level shenshouzhunengjiDeep donor level shenshizhunengjiDeep impurity level shenduzazhinengjiDeep trap shenxianzuoDefeat quexianDegenerate semiconductor jianbingbandaotiDegeneracy jianbingduDegradation tuihuaDegree Celsius(centigrade) /Kelvin sheshi/kaishiwenduDelay yanchi Density miduDensity of states taimiduDepletion haojinDepletion approximation haojinjinsiDepletion contact haojinjiechuDepletion depth haojinshenduDepletion effect haojinxiaoyingDepletion layer haojincengDepletion MOS haojinMOSDepletion region haojinquDeposited film dianjibaomoDeposition process dianjigongyiDesign rules shejiguizeDie xinpian（fushudice）Diode erjiguanDielectric jiediandeDielectric isolation jiezhigeliDifference-mode input chamoshuruDifferential amplifier chafenfangdaqiDifferential capacitance weifendianrongDiffused junction kuosanjieDiffusion kuosanDiffusion coefficient kuosanxishuDiffusion constant kuosanchangshuDiffusivity kuosanlvDiffusioncapacitance/barrier/current/furnace kuosandianrong/shilei/dianliu/luDigital circuit shuzidianluDipole domain oujichouDipole layer oujicengDirect-coupling zhijiezuoheDirect-gap semiconductor zhijiedaixibandaotiDirect transition zhijieyueqianDischarge fangdianDiscrete component fenliyuanjianDissipation haosanDistribution fenbuDistributed capacitance fenbudianrongDistributed model fenbumoxingDisplacement weiyiDislocation weicuoDomain chou Donor shizhuDonor exhaustion shizhuhaojinDopant chanzajiDoped semiconductor chanzabandaotiDoping concentration chanzanongduDouble-diffusive MOS(DMOS)shuangkuosanMOS.Drift piaoyiDrift field piaoyidianchangDrift mobility qianyilvDry etching ganfafushiDry/wet oxidation gan/shifayanghuaDose jiliangDuty cycle gongzuozhouqiDual-in-line package （DIP） shuangliezhichashifengzhuangDynamics dongtaiDynamic characteristics dongtaishuxingDynamic impedance dongtaizukangEEarly effect elixiaoyingEarly failure zaoqishixiaoEffective mass youxiaozhiliangEinstein relation(ship) aiyinsitanguanxiElectric Erase Programmable Read Only Memory(E2PROM) yicixingdiankebachuzhiducunchuqiElectrode dianjiElectrominggratim dianqianyiElectron affinity dianziqinheshiElectronic -grade dianzinengElectron-beam photo-resist exposure guangzhikangshijidedianzishupuguangElectron gas dianziqiElectron-grade water dianzijichunshuiElectron trapping center dianzifuhuozhongxinElectron Volt (eV) dianzifuElectrostatic jingdiandeElement yuansu/yuanjian/peijianElemental semiconductor yuansubandaotiEllipse tuoyuanEllipsoid tuoqiuEmitter fashejiEmitter-coupled logic fashejizuoheluojiEmitter-coupled pair fashejizuoheduiEmitter follower shesuiqiEmpty band kongdaiEmitter crowding effect fashejijibian（yongji）xiaoyingEndurance test =life test shoumingceshiEnergy state nengtaiEnergy momentum diagram nengliang-dongliang(E-K)tuEnhancement mode zengqiangxingmoshiEnhancement MOS zengqiangxingMOS Entefic (di)gongrongdeEnvironmental test huanjingceshiEpitaxial waiyandeEpitaxial layer waiyancengEpitaxial slice waiyanpianExpitaxy waiyanEquivalent curcuit dengxiaodianluEquilibrium majority /minority carriers pinghengduoshu/shaoshuzailiuziErasable Programmable ROM (EPROM)kechaqu（biancheng）cunchuqiError function complement yuwuchahanshuEtch keshiEtchant keshijiEtching mask kangshijiyanmoExcess carrier guoshengzailiuziExcitation energy jifanengExcited state jifataiExciton jiziExtrapolation waituifaExtrinsic feibenzhengdeExtrinsic semiconductor zazhibandaotiFFace - centered mianxinlifangFall time xiajiangshijianFan-in shanruFan-out shanchuFast recovery kuaihuifuFast surface states kuaijiemiantaiFeedback fankuiFermi level feiminengjiFermi-Dirac Distribution feimi-dilakefenbuFemi potential feimishiFick equation feikefangcheng（kuosan）Field effect transistor changxiaoyingjingtiguanField oxide changyanghuacengFilled band mandaiFilm baomoFlash memory shanshuocunchuqiFlat band pingdaiFlat pack bianpingfengzhuangFlicker noise shanshuo（bian）zaoshengFlip-flop toggle chufaqifanzhuanFloating gate fuzhaFluoride etch fuhuaqingkeshiForbidden band jindaiForward bias zhengxiangpianzhiForward blocking /conductingzhengxiangzuduan/daotongFrequency deviation noisepinlvpiaoyizaoshengFrequency response pinlvxiangyingFunction hanshuGGain zengyiGallium-Arsenide(GaAs) shenhuajiaGamy ray r shexianGate men、zha、kongzhijiGate oxide zhayanghuacengGauss（ian） gaosiGaussian distribution profile gaosichanzafenbuGeneration-recombination chansheng-fuheGeometries jihechicunGermanium(Ge) zheGraded huanbiandeGraded (gradual) channel huanbiangoudaoGraded junction huanbianjieGrain jingliGradient tiduGrown junction shengchangjieGuard ring baohuhuanGummel-Poom model gemou-pan moxingGunn - effect dishixiaoyingHHardened device fushejiaguqijianHeat of formation xingchengreHeat sink sanreqi、rechenHeavy/light hole band zhong/qing kongxuedaiHeavy saturation zhongchanzaHell - effect huoerxiaoyingHeterojunction yizhijieHeterojunction structure yizhijiejiegouHeterojunction Bipolar Transistor（HBT）yizhijieshuangjixingjingtiHigh field property gaochangtexingHigh-performance MOS.( H-MOS)gaoxingnengMOS. Hormalized guiyihuaHorizontal epitaxial reactor woshiwaiyanfanyingqiHot carrior rezailiuziHybrid integration hunhejichengIImage - force jingxiangliImpact ionization pengzhuangdianliImpedance zukangImperfect structure buwanzhengjiegouImplantation dose zhurujiliangImplanted ion zhuruliziImpurity zazhiImpurity scattering zazhisansheIncremental resistance dianzuzengliang（weifendianzu）In-contact mask jiechushiyanmoIndium tin oxide (ITO) zuoxiyanghuawuInduced channel ganyinggoudaoInfrared hongwaideInjection zhuruInput offset voltage shurushidiaodianyaInsulator jueyuantiInsulated Gate FET(IGFET)jueyuanzhaFETIntegrated injection logicjichengzhuruluojiIntegration jicheng、jifenInterconnection hulianInterconnection time delay hulianyanshiInterdigitated structure jiaohushijiegouInterface jiemianInterference gansheInternational system of unionsguojidanweizhiInternally scattering gujiansansheInterpolation neichafaIntrinsic benzhengdeIntrinsic semiconductor benzhengbandaotiInverse operation fanxianggongzuoInversion fanxingInverter daoxiangqiIon liziIon beam lizishuIon etching lizikeshiIon implantation lizizhuruIonization dianliIonization energy dianlinengIrradiation fuzhaoIsolation land gelidaoIsotropic gexiangtongxingJJunction FET(JFET) jiexingchangxiaoyingguanJunction isolation jiegeliJunction spacing jiejianjuJunction side-wall jiecebiLLatch up bisuoLateral hengxiangdeLattice jinggeLayout bantuLatticebinding/cell/constant/defect/distortion jinggejieheli/jingbao/jingge/jinggechangshu/jinggequexian/jinggejibianLeakage current （xie）loudianliuLevel shifting dianpingyidongLife time shouminglinearity xianxingduLinked bond gongjiajianLiquid Nitrogen yedanLiquid－phase epitaxial growth technique yexiangwaiyanshengchangjishuLithography guangkeLight Emitting Diode(LED) faguangerjiguanLoad line or Variable fuzaixianLocating and Wiring bujubuxianLongitudinal zongxiangdeLogic swing luojibaifuLorentz luolunziLumped model jizongmoxingMMajority carrier duoshuzailiuziMask yanmoban，guangkebanMask level yanmoxuhaoMask set yanmozuMass - action lawzhiliangshouhengdinglvMaster-slave D flip-flopzhucongDchufaqiMatching pipeiMaxwell maikesiweiMean free path pingjunziyouchengMeandered emitter junctionshuzhuangfashejijieMean time before failure (MTBF) pingjungongzuoshijianMegeto - resistance cizuMesa taimianMESFET-Metal SemiconductorjinshubandaotiFETMetallization jinshuhuaMicroelectronic technique weidianzijishuMicroelectronics weidianzixueMillen indices milezhishuMinority carrier shaoshuzailiuziMisfit shipeiMismatching shipeiMobile ions kedongliziMobility qianyilvModule mokuaiModulate diaozhiMolecular crystalfenzijingtiMonolithic IC danpianICMOSFETjinshuyanghuawubandaotichangxiaoyingjingtiguanMos. Transistor(MOST )MOS. jingtiguanMultiplication beizengModulator diaozhiMulti-chip IC duoxinpianICMulti-chip module(MCM) duoxinpianmokuaiMultiplication coefficientbeizengyinziNNaked chip weifengzhuangdexinpian（luopian）Negative feedback fufankuiNegative resistance fuzuNesting taokeNegative-temperature-coefficient fuwenduxishuNoise margin zaoshengrongxianNonequilibrium feipinghengNonrolatile feihuifa（yishi）xingNormally off/on changbi/kaiNumerical analysis shuzhifenxiOOccupied band mandaiOfficienay gonglvOffset pianyi、shidiaoOn standby daimingzhuangtaiOhmic contact oumujiechuOpen circuit kailuOperating point gongzuodianOperating bias gongzuopianzhiOperational amplifier (OPAMP)yunsuanfangdaqiOptical photon =photon guangziOptical quenchingguangzuomieOptical transition guangyueqianOptical-coupled isolatorguangzuohegeliqiOrganic semiconductoryoujibandaotiOrientation jingxiang、dingxiangOutline waixingOut-of-contact maskfeijiechushiyanmoOutput characteristic shuchutexingOutput voltage swing shuchudianyabaifuOvercompensation guobuchangOver-current protection guoliubaohuOver shoot guochongOver-voltage protection guoyabaohuOverlap jiaodieOverload guozaiOscillator zhendangqiOxide yanghuawuOxidation yanghuaOxide passivation yanghuacengdunhuaPPackage fengzhuangPad yahandianParameter canshuParasitic effect jishengxiaoyingParasitic oscillation jishengzhendangPassination dunhuaPassive component wuyuanyuanjianPassive device wuyuanqijianPassive surface dunhuajiemianParasitic transistor jishengjingtiguanPeak-point voltage fengdiandianyaPeak voltage fengzhidianyaPermanent-storage circuit yongjiucunchudianluPeriod zhouqiPeriodic table zhouqibiaoPermeable - base keshentoujiquPhase-lock loop suoxianghuanPhase drift xiangyiPhonon spectra shengzipuPhoto conduction guangdiandaoPhoto diode guangdianerjiguanPhotoelectric cell guangdianchiPhotoelectric effect guangdianxiaoyingPhotoenic devices guangziqijianPhotolithographic process guangkegongyi(photo) resist （guangmin）kangfushijiPin guanjiaoPinch off jiaduanPinning of Fermi level feiminengjidedingzha（xiaoying）Planar process pingmiangongyiPlanar transistor pingmianjingtiguanPlasma denglizitiPlezoelectric effect yadianxiaoyingPoisson equation bosongfangchengPoint contact dianjiechuPolarity jixingPolycrystal duojingPolymer semiconductorjuhewubandaotiPoly-silicon duojingguiPotential (dian)shiPotential barrier shileiPotential well shizuoPower dissipation gonghaoPower transistor gonglvjingtiguanPreamplifier qianzhifangdaqiPrimary flat zhupingmianPrincipal axes zhuzhouPrint-circuit board(PCB) yinzhidianlubanProbability jilvProbe tanzhenProcess gongyiPropagation delay chuanshuyanshiPseudopotential method zuoshifaPunch through chuantongPulse triggering/modulating maichongchufa/diaozhiPulse Widen Modulator(PWM) maichongkuandudiaozhiPunchthrough chuantongPush-pull stage tuiwanjiQQuality factor pinzhiyinziQuantization liangzihuaQuantum liangziQuantum efficiencyliangzixiaoyingQuantum mechanics liangzilixueQuasi – Fermi－levelzhunfeiminengjiQuartz shiyingRRadiation conductivity fushediandaolvRadiation damage fushesunshangRadiation flux density fushetongliangmiduRadiation hardening fushejiaguRadiation protection fushebaohuRadiative - recombinationfuzhaofuheRadioactive fangshexingReach through chuantongReactive sputtering source fanyingjiansheyuanRead diode lideerjiguanRecombination fuheRecovery diode huifuerjiguanReciprocal lattice daoheziRecovery time huifushijianRectifier zhengliuqi（guan）Rectifying contact zhengliujiechuReference jizhundian jizhun cankaodianRefractive index zheshelvRegister jicunqiRegistration duizhunRegulate kongzhi diaozhengRelaxation lifetime chiyushijianReliability kekaoxingResonance xiezhenResistance dianzuResistor dianzuqiResistivity dianzulvRegulator wenyaguan（qi）Relaxation chiyuResonant frequencygongshepinlvResponse time xiangyingshijianReverse fanxiangdeReverse bias fanxiangpianzhiSSampling circuit quyangdianluSapphire lanbaoshi（Al2O3）Satellite valley weixingguSaturated current rangedianliubaohequSaturation region baohequSaturation baohedeScaled down anbilisuoxiaoScattering sansheSchockley diode xiaokelaierjiguanSchottky xiaotejiSchottky barrier xiaotejishileiSchottky contact xiaotejijiechuSchrodingen xuedingeScribing grid huapiangeSecondary flat cipingmianSeed crystal zijingSegregation fenningSelectivity xuanzexingSelf aligned ziduizhundeSelf diffusion zikuosanSemiconductor bandaotiSemiconductor-controlled rectifier kekongguiSendsitivity lingminduSerial chuanxing/chuanlianSeries inductance chuanliandianganSettle time jianlishijianSheet resistance baocengdianzuShield pingbiShort circuit duanluShot noise sanlizaoshengShunt fenliuSidewall capacitancebianqiangdianrongSignal xinhaoSilica glass shiyingboliSilicon guiSilicon carbide tanhuaguiSilicon dioxide (SiO2) eryanghuaguiSilicon Nitride(Si3N4) danhuaguiSilicon On Insulator jueyuanguiSiliver whiskers yinxuSimple cubic jianlifangSingle crystal danjingSink chenSkin effect qufuxiaoyingSnap time jibianshijianSneak path qianxingtongluSulethreshold yazuodeSolar battery/cell taiyangnengdianchiSolid circuit gutidianluSolid Solubility gurongduSonband zidaiSource yuanjiSource follower yuansuiqiSpace charge kongjiandianheSpecific heat(PT) reSpeed-power product sudugonghaochengjiSpherical qiumiandeSpin zixuan Split fenlieSpontaneous emission zifafasheSpreading resistancekuozhandianzuSputter jiansheStacking fault cengcuoStatic characteristic jingtaitexingStimulated emission shoujifasheStimulated recombination shoujifuheStorage time cunchushijianStress yingliStraggle pianchaSublimation shenghuaSubstrate chendiSubstitutional tiweishideSuperlattice chaojinggeSupply dianyuanSurface biaomianSurge capacity langyongnengliSubscript xiabiaoSwitching time kaiguanshijianSwitch kaiguanTTailing kuozhanTerminal zhongduanTensor zhangliang Tensorial zhangliangdeThermal activation rejifaThermal conductivity redaolvThermal equilibrium repinghengThermal Oxidation reyanghuaThermal resistance rezuThermal sink rechenThermal velocity reyundongThermoelectricpovoer wenchadiandongshilvThick-film technique houmojishuThin-film hybrid ICbaomohunhejichengdianluThin-Film Transistor(TFT) baomojingtiThreshlod zuozhiThyistor jingzhaguanTransconductance kuadaoTransfer characteristic zhuanyitexingTransfer electron zhuanyidianziTransfer function chuanshuhanshuTransient shuntaideTransistor aging(stress) jingtiguanlaohuaTransit time duyueshijianTransition yueqianTransition-metal silica guodujinshuguihuawuTransition probability yueqianjilvTransition region guoduquTransport shuyun Transverse hengxiangdeTrap xianzuo Trapping fuhuoTrapped charge xianzuodianheTriangle generator sanjiaobofashengqiTriboelectricity mobadianTrigger chufaTrim diaopei diaozhengTriple diffusion sanzhongkuosanTruth table zhenzhibiaoTolerahce rongchaTunnel(ing) suidao（chuan）Tunnel current suidaodianliuTurn over zhuanzheTurn - off time guanduanshijianUUltraviolet ziwaideUnijunction danjiedeUnipolar danjideUnit cell yuan（yuan）baoUnity-gain frequency danweizengyipinlvUnilateral-switchdanxiangkaiguanVVacancy kongweiVacuum zhenkongValence(value) band jiadaiValue band edge jiadaidingValence bond jiajianVapour phase qixiangVaractor bianrongguanVaristor bianzuqiVibration zhendongVoltage dianyaWWafer jingpianWave equation bodongfangchengWave guide bodaoWave number boshuWave-particle duality bolierxiangxingWear-out shaohuiWire routing buxianWork function gonghanshuWorst-case device zuihuaiqingkuangqijianYYield chengpinlvZZener breakdown qinajichuanZone melting qurongfamianzeshengming：benwenxiwangluozhuanzai，banquanguiyuanzuozhesuoyou。gengduoganhuoneirongzhixuyaoniguanzhudianzixinbakeweixingongzhonghao！liaojiegengduobuguangshitaici，huanyoubiaoqing、xingweixiguandeng。
这(窜丑别)造(窜补辞)型(齿颈苍驳)给(骋别颈)宋(厂辞苍驳)智(窜丑颈)孝(齿颈补辞)打(顿补)造(窜补辞)的(顿别)，不(叠耻)仅(闯颈苍)让(搁补苍驳)她(罢补)本(叠别苍)人(搁别苍)瞬(厂丑耻苍)间(闯颈补苍)老(尝补辞)了(尝颈补辞)十(厂丑颈)几(闯颈)岁(厂耻颈)，而(贰谤)且(蚕颈别)整(窜丑别苍驳)个(骋别)人(搁别苍)显(齿颈补苍)得(顿别)更(骋别苍驳)是(厂丑颈)“又(驰辞耻)矮(础颈)又(驰辞耻)挫(颁耻辞)”。
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珍惜现在的每一天活出真我不留遗憾