《对于爱人是邪神这件小事》山蓝鸲咕咕咕 ^第7章^...
而我们，更应该透过这部电影，看到更深层的民生问题！
2024年12月25日，在检查前熟悉检查的流程，能帮我们快速通关。以用力肺活量测量为例，整个测量流程如下：
《对于爱人是邪神这件小事》山蓝鸲咕咕咕 ^第7章^...
碳化硅芯片有两个细分领域二极管和叁极管沉波说目前国际上6英寸是主流8英寸的技术也在发展二极管已经发展到了第五代叁极管也已经发展到第四代碳化硅滨骋叠罢也开始进入量产的初期整体发展很快在新能源汽车里世界上有四五家大厂的车规级碳化硅芯片在应用厂罢、英飞凌等
此外，在“北溪”管道被炸毁后，还有一个细节耐人寻味。相比之下，作为特斯拉一直以来的死忠粉，伍德曾多次表达对该股的坚定看好。在她看来，特斯拉是“最大的人工智能公司”。今年4月，伍德大胆预测，到2027年特斯拉会因其自动驾驶技术涨至2000美元。
锄丑耻：飞别苍/濒颈耻测颈苍产颈苍，飞别苍锄丑补苍驳濒补颈测耻补苍：蝉丑补苍驳测别辫颈苍驳濒耻苍(驳辞苍驳锄丑辞苍驳丑补辞滨顿：蝉丑补苍驳测别辫颈苍驳濒耻苍)，产别苍飞别苍飞别颈锄耻辞锄丑别诲耻濒颈驳耻补苍诲颈补苍，产耻诲补颈产颈补辞测颈产补苍驳诲辞苍驳濒颈濒颈肠丑补苍驳。办别虫颈，别谤测颈诲别蝉丑别苍迟颈锄丑耻箩颈补苍产颈补苍诲别虫耻谤耻辞。飞辞办补苍锄丑耻辞迟补肠辞苍驳测颈驳别苍别苍驳箩颈补苍驳虫颈补辞丑耻补诲别濒补辞飞补苍迟辞苍驳，产颈补苍肠丑别苍驳濒颈补辞测颈驳别濒颈补苍锄辞耻濒耻诲耻虫耻测补辞肠丑补苍蹿耻诲别产颈苍驳谤别苍。飞辞虫颈苍迟别苍驳辩耻别飞耻苍别苍驳飞别颈濒颈，锄丑颈苍别苍驳箩颈苍飞辞蝉耻辞苍别苍驳，谤补苍驳迟补诲别谤颈锄颈驳耻辞诲别蝉丑耻蹿耻虫颈别。别谤测颈锄辞苍驳蝉丑颈蝉丑耻辞：“尘颈苍驳补，产颈别诲补苍虫颈苍飞辞，飞辞锄丑别产补濒补辞驳耻迟辞耻丑耻补苍苍别苍驳肠丑别苍驳诲别锄丑耻。”诲补苍飞辞锄丑颈诲补辞，迟补诲别虫颈补辞谤辞苍驳产别颈丑辞耻，肠补苍驳锄丑耻辞诲耻颈蝉颈飞补苍驳诲别办辞苍驳箩耻。
赶(Gan)紧(Jin)收(Shou)藏(Cang)，半(Ban)导(Dao)体(Ti)一(Yi)些(Xie)术(Shu)语(Yu)的(De)中(Zhong)英(Ying)文(Wen)对(Dui)照(Zhao)2020-05-21 15:59·电(Dian)子(Zi)芯(Xin)吧(Ba)客(Ke)常(Chang)用(Yong)半(Ban)导(Dao)体(Ti)中(Zhong)英(Ying)对(Dui)照(Zhao)表(Biao)离(Li)子(Zi)注(Zhu)入(Ru)机(Ji) ion implanterLSS理(Li)论(Lun) Lindhand Scharff and Schiott theory，又(You)称(Cheng)“林(Lin)汉(Han)德(De)-斯(Si)卡(Ka)夫(Fu)-斯(Si)高(Gao)特(Te)理(Li)论(Lun)”。沟(Gou)道(Dao)效(Xiao)应(Ying) channeling effect射(She)程(Cheng)分(Fen)布(Bu) range distribution深(Shen)度(Du)分(Fen)布(Bu) depth distribution投(Tou)影(Ying)射(She)程(Cheng) projected range阻(Zu)止(Zhi)距(Ju)离(Li) stopping distance阻(Zu)止(Zhi)本(Ben)领(Ling) stopping power标(Biao)准(Zhun)阻(Zu)止(Zhi)截(Jie)面(Mian) standard stopping cross section退(Tui)火(Huo) annealing激(Ji)活(Huo)能(Neng) activation energy等(Deng)温(Wen)退(Tui)火(Huo) isothermal annealing激(Ji)光(Guang)退(Tui)火(Huo) laser annealing应(Ying)力(Li)感(Gan)生(Sheng)缺(Que)陷(Xian) stress-induced defect择(Ze)优(You)取(Qu)向(Xiang) preferred orientation制(Zhi)版(Ban)工(Gong)艺(Yi) mask-making technology图(Tu)形(Xing)畸(Ji)变(Bian) pattern distortion初(Chu)缩(Suo) first minification精(Jing)缩(Suo) final minification母(Mu)版(Ban) master mask铬(Ge)版(Ban) chromium plate干(Gan)版(Ban) dry plate乳(Ru)胶(Jiao)版(Ban) emulsion plate透(Tou)明(Ming)版(Ban) see-through plate高(Gao)分(Fen)辨(Bian)率(Lv)版(Ban) high resolution plate, HRP超(Chao)微(Wei)粒(Li)干(Gan)版(Ban) plate forultra-microminiaturization掩(Yan)模(Mo) mask掩(Yan)模(Mo)对(Dui)准(Zhun) mask alignment对(Dui)准(Zhun)精(Jing)度(Du) alignment precision光(Guang)刻(Ke)胶(Jiao) photoresist，又(You)称(Cheng)“光(Guang)致(Zhi)抗(Kang)蚀(Shi)剂(Ji)”。负(Fu)性(Xing)光(Guang)刻(Ke)胶(Jiao) negative photoresist正(Zheng)性(Xing)光(Guang)刻(Ke)胶(Jiao) positive photoresist无(Wu)机(Ji)光(Guang)刻(Ke)胶(Jiao) inorganic resist多(Duo)层(Ceng)光(Guang)刻(Ke)胶(Jiao) multilevel resist电(Dian)子(Zi)束(Shu)光(Guang)刻(Ke)胶(Jiao) electron beam resistX射(She)线(Xian)光(Guang)刻(Ke)胶(Jiao) X-ray resist刷(Shua)洗(Xi) scrubbing甩(Shuai)胶(Jiao) spinning涂(Tu)胶(Jiao) photoresist coating后(Hou)烘(Hong) postbaking光(Guang)刻(Ke) photolithographyX射(She)线(Xian)光(Guang)刻(Ke) X-ray lithography电(Dian)子(Zi)束(Shu)光(Guang)刻(Ke) electron beam lithography离(Li)子(Zi)束(Shu)光(Guang)刻(Ke) ion beam lithography深(Shen)紫(Zi)外(Wai)光(Guang)刻(Ke) deep-UV lithography光(Guang)刻(Ke)机(Ji) mask aligner投(Tou)影(Ying)光(Guang)刻(Ke)机(Ji) projection mask aligner曝(Pu)光(Guang) exposure接(Jie)触(Chu)式(Shi)曝(Pu)光(Guang)法(Fa) contact exposure method接(Jie)近(Jin)式(Shi)曝(Pu)光(Guang)法(Fa) proximity exposure method光(Guang)学(Xue)投(Tou)影(Ying)曝(Pu)光(Guang)法(Fa) optical projection exposure method电(Dian)子(Zi)束(Shu)曝(Pu)光(Guang)系(Xi)统(Tong) electron beam exposure system分(Fen)步(Bu)重(Zhong)复(Fu)系(Xi)统(Tong) step-and-repeat system显(Xian)影(Ying) development线(Xian)宽(Kuan) linewidth去(Qu)胶(Jiao) stripping of photoresist氧(Yang)化(Hua)去(Qu)胶(Jiao) removing of photoresist by oxidation等(Deng)离(Li)子(Zi)［体(Ti)］去(Qu)胶(Jiao) removing of photoresist by plasma刻(Ke)蚀(Shi) etching干(Gan)法(Fa)刻(Ke)蚀(Shi) dry etching反(Fan)应(Ying)离(Li)子(Zi)刻(Ke)蚀(Shi) reactive ion etching, RIE各(Ge)向(Xiang)同(Tong)性(Xing)刻(Ke)蚀(Shi) isotropic etching各(Ge)向(Xiang)异(Yi)性(Xing)刻(Ke)蚀(Shi) anisotropic etching反(Fan)应(Ying)溅(Jian)射(She)刻(Ke)蚀(Shi) reactive sputter etching离(Li)子(Zi)铣(Xi) ion beam milling，又(You)称(Cheng)“离(Li)子(Zi)磨(Mo)削(Xiao)”。等(Deng)离(Li)子(Zi)［体(Ti)］刻(Ke)蚀(Shi) plasma etching钻(Zuan)蚀(Shi) undercutting剥(Bao)离(Li)技(Ji)术(Shu) lift-off technology，又(You)称(Cheng)“浮(Fu)脱(Tuo)工(Gong)艺(Yi)”。终(Zhong)点(Dian)监(Jian)测(Ce) endpoint monitoring金(Jin)属(Shu)化(Hua) metallization互(Hu)连(Lian) interconnection多(Duo)层(Ceng)金(Jin)属(Shu)化(Hua) multilevel metallization电(Dian)迁(Qian)徙(Zuo) electromigration回(Hui)流(Liu) reflow磷(Lin)硅(Gui)玻(Bo)璃(Li) phosphorosilicate glass硼(Peng)磷(Lin)硅(Gui)玻(Bo)璃(Li) boron-phosphorosilicate glass钝(Dun)化(Hua)工(Gong)艺(Yi) passivation technology多(Duo)层(Ceng)介(Jie)质(Zhi)钝(Dun)化(Hua) multilayer dielectric passivation划(Hua)片(Pian) scribing电(Dian)子(Zi)束(Shu)切(Qie)片(Pian) electron beam slicing烧(Shao)结(Jie) sintering印(Yin)压(Ya) indentation热(Re)压(Ya)焊(Han) thermocompression bonding热(Re)超(Chao)声(Sheng)焊(Han) thermosonic bonding冷(Leng)焊(Han) cold welding点(Dian)焊(Han) spot welding球(Qiu)焊(Han) ball bonding楔(Xie)焊(Han) wedge bonding内(Nei)引(Yin)线(Xian)焊(Han)接(Jie) inner lead bonding外(Wai)引(Yin)线(Xian)焊(Han)接(Jie) outer lead bonding梁(Liang)式(Shi)引(Yin)线(Xian) beam lead装(Zhuang)架(Jia)工(Gong)艺(Yi) mounting technology附(Fu)着(Zhuo) adhesion封(Feng)装(Zhuang) packaging金(Jin)属(Shu)封(Feng)装(Zhuang) metallic packaging陶(Tao)瓷(Ci)封(Feng)装(Zhuang) ceramic packaging扁(Bian)平(Ping)封(Feng)装(Zhuang) flat packaging塑(Su)封(Feng) plastic package玻(Bo)璃(Li)封(Feng)装(Zhuang) glass packaging微(Wei)封(Feng)装(Zhuang) micropackaging，又(You)称(Cheng)“微(Wei)组(Zu)装(Zhuang)”。管(Guan)壳(Ke) package管(Guan)芯(Xin) die引(Yin)线(Xian)键(Jian)合(He) lead bonding引(Yin)线(Xian)框(Kuang)式(Shi)键(Jian)合(He) lead frame bonding带(Dai)式(Shi)自(Zi)动(Dong)键(Jian)合(He) tape automated bonding, TAB激(Ji)光(Guang)键(Jian)合(He) laser bonding超(Chao)声(Sheng)键(Jian)合(He) ultrasonic bonding红(Hong)外(Wai)键(Jian)合(He) infrared bonding微(Wei)电(Dian)子(Zi)辞(Ci)典(Dian)大(Da)集(Ji)合(He)（按(An)首(Shou)字(Zi)母(Mu)顺(Shun)序(Xu)排(Pai)序(Xu)）AAbrupt junction 突(Tu)变(Bian)结(Jie)Accelerated testing 加(Jia)速(Su)实(Shi)验(Yan)Acceptor 受(Shou)主(Zhu)Acceptor atom 受(Shou)主(Zhu)原(Yuan)子(Zi)Accumulation 积(Ji)累(Lei)、堆(Dui)积(Ji)Accumulating contact 积(Ji)累(Lei)接(Jie)触(Chu)Accumulation region 积(Ji)累(Lei)区(Qu)Accumulation layer 积(Ji)累(Lei)层(Ceng)Active region 有(You)源(Yuan)区(Qu)Active component 有(You)源(Yuan)元(Yuan)Active device 有(You)源(Yuan)器(Qi)件(Jian)Activation 激(Ji)活(Huo)Activation energy 激(Ji)活(Huo)能(Neng)Active region 有(You)源(Yuan)（放(Fang)大(Da)）区(Qu)Admittance 导(Dao)纳(Na)Allowed band 允(Yun)带(Dai)Alloy-junction device合(He)金(Jin)结(Jie)器(Qi)件(Jian)Aluminum(Aluminium) 铝(Lv)Aluminum – oxide 铝(Lv)氧(Yang)化(Hua)物(Wu)Aluminum passivation 铝(Lv)钝(Dun)化(Hua)Ambipolar 双(Shuang)极(Ji)的(De)Ambient temperature 环(Huan)境(Jing)温(Wen)度(Du)Amorphous 无(Wu)定(Ding)形(Xing)的(De)，非(Fei)晶(Jing)体(Ti)的(De)Amplifier 功(Gong)放(Fang) 扩(Kuo)音(Yin)器(Qi) 放(Fang)大(Da)器(Qi)Analogue(Analog) comparator 模(Mo)拟(Ni)比(Bi)较(Jiao)器(Qi)Angstrom 埃(Ai)Anneal 退(Tui)火(Huo)Anisotropic 各(Ge)向(Xiang)异(Yi)性(Xing)的(De)Anode 阳(Yang)极(Ji)Arsenic (AS) 砷(Shen)Auger 俄(E)歇(Xie)Auger process 俄(E)歇(Xie)过(Guo)程(Cheng)Avalanche 雪(Xue)崩(Beng)Avalanche breakdown 雪(Xue)崩(Beng)击(Ji)穿(Chuan)Avalanche excitation雪(Xue)崩(Beng)激(Ji)发(Fa)BBackground carrier 本(Ben)底(Di)载(Zai)流(Liu)子(Zi)Background doping 本(Ben)底(Di)掺(Chan)杂(Za)Backward 反(Fan)向(Xiang)Backward bias 反(Fan)向(Xiang)偏(Pian)置(Zhi)Ballasting resistor 整(Zheng)流(Liu)电(Dian)阻(Zu)Ball bond 球(Qiu)形(Xing)键(Jian)合(He)Band 能(Neng)带(Dai)Band gap 能(Neng)带(Dai)间(Jian)隙(Xi)Barrier 势(Shi)垒(Lei)Barrier layer 势(Shi)垒(Lei)层(Ceng)Barrier width 势(Shi)垒(Lei)宽(Kuan)度(Du)Base 基(Ji)极(Ji)Base contact 基(Ji)区(Qu)接(Jie)触(Chu)Base stretching 基(Ji)区(Qu)扩(Kuo)展(Zhan)效(Xiao)应(Ying)Base transit time 基(Ji)区(Qu)渡(Du)越(Yue)时(Shi)间(Jian)Base transport efficiency基(Ji)区(Qu)输(Shu)运(Yun)系(Xi)数(Shu)Base-width modulation基(Ji)区(Qu)宽(Kuan)度(Du)调(Diao)制(Zhi)Basis vector 基(Ji)矢(Shi)Bias 偏(Pian)置(Zhi)Bilateral switch 双(Shuang)向(Xiang)开(Kai)关(Guan)Binary code 二(Er)进(Jin)制(Zhi)代(Dai)码(Ma)Binary compound semiconductor 二(Er)元(Yuan)化(Hua)合(He)物(Wu)半(Ban)导(Dao)体(Ti)Bipolar 双(Shuang)极(Ji)性(Xing)的(De)Bipolar Junction Transistor (BJT)双(Shuang)极(Ji)晶(Jing)体(Ti)管(Guan)Bloch 布(Bu)洛(Luo)赫(He)Blocking band 阻(Zu)挡(Dang)能(Neng)带(Dai)Blocking contact 阻(Zu)挡(Dang)接(Jie)触(Chu)Body - centered 体(Ti)心(Xin)立(Li)方(Fang)Body-centred cubic structure 体(Ti)立(Li)心(Xin)结(Jie)构(Gou)Boltzmann 波(Bo)尔(Er)兹(Zi)曼(Man)Bond 键(Jian)、键(Jian)合(He)Bonding electron 价(Jia)电(Dian)子(Zi)Bonding pad 键(Jian)合(He)点(Dian)Bootstrap circuit 自(Zi)举(Ju)电(Dian)路(Lu)Bootstrapped emitter follower 自(Zi)举(Ju)射(She)极(Ji)跟(Gen)随(Sui)器(Qi)Boron 硼(Peng)Borosilicate glass 硼(Peng)硅(Gui)玻(Bo)璃(Li)Boundary condition 边(Bian)界(Jie)条(Tiao)件(Jian)Bound electron 束(Shu)缚(Fu)电(Dian)子(Zi)Breadboard 模(Mo)拟(Ni)板(Ban)、实(Shi)验(Yan)板(Ban)Break down 击(Ji)穿(Chuan)Break over 转(Zhuan)折(Zhe)Brillouin 布(Bu)里(Li)渊(Yuan)Brillouin zone 布(Bu)里(Li)渊(Yuan)区(Qu)Built-in 内(Nei)建(Jian)的(De)Build-in electric field 内(Nei)建(Jian)电(Dian)场(Chang)Bulk 体(Ti)/体(Ti)内(Nei)Bulk absorption 体(Ti)吸(Xi)收(Shou)Bulk generation 体(Ti)产(Chan)生(Sheng)Bulk recombination 体(Ti)复(Fu)合(He)Burn - in 老(Lao)化(Hua)Burn out 烧(Shao)毁(Hui)Buried channel 埋(Mai)沟(Gou)Buried diffusion region 隐(Yin)埋(Mai)扩(Kuo)散(San)区(Qu)CCan 外(Wai)壳(Ke)Capacitance 电(Dian)容(Rong)Capture cross section 俘(Fu)获(Huo)截(Jie)面(Mian)Capture carrier 俘(Fu)获(Huo)载(Zai)流(Liu)子(Zi)Carrier 载(Zai)流(Liu)子(Zi)、载(Zai)波(Bo)Carry bit 进(Jin)位(Wei)位(Wei)Carry-in bit 进(Jin)位(Wei)输(Shu)入(Ru)Carry-out bit 进(Jin)位(Wei)输(Shu)出(Chu)Cascade 级(Ji)联(Lian)Case 管(Guan)壳(Ke)Cathode 阴(Yin)极(Ji)Center 中(Zhong)心(Xin)Ceramic 陶(Tao)瓷(Ci)（的(De)）Channel 沟(Gou)道(Dao)Channel breakdown 沟(Gou)道(Dao)击(Ji)穿(Chuan)Channel current 沟(Gou)道(Dao)电(Dian)流(Liu)Channel doping 沟(Gou)道(Dao)掺(Chan)杂(Za)Channel shortening 沟(Gou)道(Dao)缩(Suo)短(Duan)Channel width 沟(Gou)道(Dao)宽(Kuan)度(Du)Characteristic impedance 特(Te)征(Zheng)阻(Zu)抗(Kang)Charge 电(Dian)荷(He)、充(Chong)电(Dian)Charge-compensation effects 电(Dian)荷(He)补(Bu)偿(Chang)效(Xiao)应(Ying)Charge conservation 电(Dian)荷(He)守(Shou)恒(Heng)Charge neutrality condition 电(Dian)中(Zhong)性(Xing)条(Tiao)件(Jian)Chargedrive/exchange/sharing/transfer/storage 电(Dian)荷(He)驱(Qu)动(Dong)/交(Jiao)换(Huan)/共(Gong)享(Xiang)/转(Zhuan)移(Yi)/存(Cun)储(Chu)Chemmical etching 化(Hua)学(Xue)腐(Fu)蚀(Shi)法(Fa)Chemically-Polish 化(Hua)学(Xue)抛(Pao)光(Guang)Chemmically-Mechanically Polish (CMP) 化(Hua)学(Xue)机(Ji)械(Xie)抛(Pao)光(Guang)Chip 芯(Xin)片(Pian)Chip yield 芯(Xin)片(Pian)成(Cheng)品(Pin)率(Lv)Clamped 箝(Zuo)位(Wei)Clamping diode 箝(Zuo)位(Wei)二(Er)极(Ji)管(Guan)Cleavage plane 解(Jie)理(Li)面(Mian)Clock rate 时(Shi)钟(Zhong)频(Pin)率(Lv)Clock generator 时(Shi)钟(Zhong)发(Fa)生(Sheng)器(Qi)Clock flip-flop 时(Shi)钟(Zhong)触(Chu)发(Fa)器(Qi)Close-packed structure 密(Mi)堆(Dui)积(Ji)结(Jie)构(Gou)Close-loop gain 闭(Bi)环(Huan)增(Zeng)益(Yi)Collector 集(Ji)电(Dian)极(Ji)Collision 碰(Peng)撞(Zhuang)Compensated OP-AMP 补(Bu)偿(Chang)运(Yun)放(Fang)Common-base/collector/emitter connection 共(Gong)基(Ji)极(Ji)/集(Ji)电(Dian)极(Ji)/发(Fa)射(She)极(Ji)连(Lian)接(Jie)Common-gate/drain/source connection 共(Gong)栅(Zha)/漏(Lou)/源(Yuan)连(Lian)接(Jie)Common-mode gain 共(Gong)模(Mo)增(Zeng)益(Yi)Common-mode input 共(Gong)模(Mo)输(Shu)入(Ru)Common-mode rejection ratio (CMRR) 共(Gong)模(Mo)抑(Yi)制(Zhi)比(Bi)Compatibility 兼(Jian)容(Rong)性(Xing)Compensation 补(Bu)偿(Chang)Compensated impurities 补(Bu)偿(Chang)杂(Za)质(Zhi)Compensated semiconductor 补(Bu)偿(Chang)半(Ban)导(Dao)体(Ti)Complementary Darlington circuit 互(Hu)补(Bu)达(Da)林(Lin)顿(Dun)电(Dian)路(Lu)Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)互(Hu)补(Bu)金(Jin)属(Shu)氧(Yang)化(Hua)物(Wu)半(Ban)导(Dao)体(Ti)场(Chang)效(Xiao)应(Ying)晶(Jing)体(Ti)管(Guan)Complementary error function 余(Yu)误(Wu)差(Cha)函(Han)数(Shu)Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 计(Ji)算(Suan)机(Ji)辅(Fu)助(Zhu)设(She)计(Ji)/ 测(Ce)试(Shi) /制(Zhi)造(Zao)Compound Semiconductor 化(Hua)合(He)物(Wu)半(Ban)导(Dao)体(Ti)Conductance 电(Dian)导(Dao)Conduction band (edge) 导(Dao)带(Dai)(底(Di))Conduction level/state 导(Dao)带(Dai)态(Tai)Conductor 导(Dao)体(Ti)Conductivity 电(Dian)导(Dao)率(Lv)Configuration 组(Zu)态(Tai)Conlomb 库(Ku)仑(Lun)Conpled Configuration Devices 结(Jie)构(Gou)组(Zu)态(Tai)Constants 物(Wu)理(Li)常(Chang)数(Shu)Constant energy surface 等(Deng)能(Neng)面(Mian)Constant-source diffusion恒(Heng)定(Ding)源(Yuan)扩(Kuo)散(San)Contact 接(Jie)触(Chu)Contamination 治(Zhi)污(Wu)Continuity equation 连(Lian)续(Xu)性(Xing)方(Fang)程(Cheng)Contact hole 接(Jie)触(Chu)孔(Kong)Contact potential 接(Jie)触(Chu)电(Dian)势(Shi)Continuity condition 连(Lian)续(Xu)性(Xing)条(Tiao)件(Jian)Contra doping 反(Fan)掺(Chan)杂(Za)Controlled 受(Shou)控(Kong)的(De)Converter 转(Zhuan)换(Huan)器(Qi)Conveyer 传(Chuan)输(Shu)器(Qi)Copper interconnection system 铜(Tong)互(Hu)连(Lian)系(Xi)统(Tong)Couping 耦(Zuo)合(He)Covalent 共(Gong)阶(Jie)的(De)Crossover 跨(Kua)交(Jiao)Critical 临(Lin)界(Jie)的(De)Crossunder 穿(Chuan)交(Jiao)Crucible坩(Zuo)埚(Zuo)Crystaldefect/face/orientation/lattice 晶(Jing)体(Ti)缺(Que)陷(Xian)/晶(Jing)面(Mian)/晶(Jing)向(Xiang)/晶(Jing)格(Ge)Current density 电(Dian)流(Liu)密(Mi)度(Du)Curvature 曲(Qu)率(Lv)Cut off 截(Jie)止(Zhi)Current drift/dirve/sharing 电(Dian)流(Liu)漂(Piao)移(Yi)/驱(Qu)动(Dong)/共(Gong)享(Xiang)Current Sense 电(Dian)流(Liu)取(Qu)样(Yang)Curvature 弯(Wan)曲(Qu)Custom integrated circuit 定(Ding)制(Zhi)集(Ji)成(Cheng)电(Dian)路(Lu)Cylindrical 柱(Zhu)面(Mian)的(De)Czochralshicrystal 直(Zhi)立(Li)单(Dan)晶(Jing)Czochralski technique 切(Qie)克(Ke)劳(Lao)斯(Si)基(Ji)技(Ji)术(Shu)（Cz法(Fa)直(Zhi)拉(La)晶(Jing)体(Ti)J）DDangling bonds 悬(Xuan)挂(Gua)键(Jian)Dark current 暗(An)电(Dian)流(Liu)Dead time 空(Kong)载(Zai)时(Shi)间(Jian)Debye length 德(De)拜(Bai)长(Chang)度(Du)De.broglie 德(De)布(Bu)洛(Luo)意(Yi)Decderate 减(Jian)速(Su)Decibel (dB) 分(Fen)贝(Bei)Decode 译(Yi)码(Ma)Deep acceptor level 深(Shen)受(Shou)主(Zhu)能(Neng)级(Ji)Deep donor level 深(Shen)施(Shi)主(Zhu)能(Neng)级(Ji)Deep impurity level 深(Shen)度(Du)杂(Za)质(Zhi)能(Neng)级(Ji)Deep trap 深(Shen)陷(Xian)阱(Zuo)Defeat 缺(Que)陷(Xian)Degenerate semiconductor 简(Jian)并(Bing)半(Ban)导(Dao)体(Ti)Degeneracy 简(Jian)并(Bing)度(Du)Degradation 退(Tui)化(Hua)Degree Celsius(centigrade) /Kelvin 摄(She)氏(Shi)/开(Kai)氏(Shi)温(Wen)度(Du)Delay 延(Yan)迟(Chi) Density 密(Mi)度(Du)Density of states 态(Tai)密(Mi)度(Du)Depletion 耗(Hao)尽(Jin)Depletion approximation 耗(Hao)尽(Jin)近(Jin)似(Si)Depletion contact 耗(Hao)尽(Jin)接(Jie)触(Chu)Depletion depth 耗(Hao)尽(Jin)深(Shen)度(Du)Depletion effect 耗(Hao)尽(Jin)效(Xiao)应(Ying)Depletion layer 耗(Hao)尽(Jin)层(Ceng)Depletion MOS 耗(Hao)尽(Jin)MOSDepletion region 耗(Hao)尽(Jin)区(Qu)Deposited film 淀(Dian)积(Ji)薄(Bao)膜(Mo)Deposition process 淀(Dian)积(Ji)工(Gong)艺(Yi)Design rules 设(She)计(Ji)规(Gui)则(Ze)Die 芯(Xin)片(Pian)（复(Fu)数(Shu)dice）Diode 二(Er)极(Ji)管(Guan)Dielectric 介(Jie)电(Dian)的(De)Dielectric isolation 介(Jie)质(Zhi)隔(Ge)离(Li)Difference-mode input 差(Cha)模(Mo)输(Shu)入(Ru)Differential amplifier 差(Cha)分(Fen)放(Fang)大(Da)器(Qi)Differential capacitance 微(Wei)分(Fen)电(Dian)容(Rong)Diffused junction 扩(Kuo)散(San)结(Jie)Diffusion 扩(Kuo)散(San)Diffusion coefficient 扩(Kuo)散(San)系(Xi)数(Shu)Diffusion constant 扩(Kuo)散(San)常(Chang)数(Shu)Diffusivity 扩(Kuo)散(San)率(Lv)Diffusioncapacitance/barrier/current/furnace 扩(Kuo)散(San)电(Dian)容(Rong)/势(Shi)垒(Lei)/电(Dian)流(Liu)/炉(Lu)Digital circuit 数(Shu)字(Zi)电(Dian)路(Lu)Dipole domain 偶(Ou)极(Ji)畴(Chou)Dipole layer 偶(Ou)极(Ji)层(Ceng)Direct-coupling 直(Zhi)接(Jie)耦(Zuo)合(He)Direct-gap semiconductor 直(Zhi)接(Jie)带(Dai)隙(Xi)半(Ban)导(Dao)体(Ti)Direct transition 直(Zhi)接(Jie)跃(Yue)迁(Qian)Discharge 放(Fang)电(Dian)Discrete component 分(Fen)立(Li)元(Yuan)件(Jian)Dissipation 耗(Hao)散(San)Distribution 分(Fen)布(Bu)Distributed capacitance 分(Fen)布(Bu)电(Dian)容(Rong)Distributed model 分(Fen)布(Bu)模(Mo)型(Xing)Displacement 位(Wei)移(Yi)Dislocation 位(Wei)错(Cuo)Domain 畴(Chou) Donor 施(Shi)主(Zhu)Donor exhaustion 施(Shi)主(Zhu)耗(Hao)尽(Jin)Dopant 掺(Chan)杂(Za)剂(Ji)Doped semiconductor 掺(Chan)杂(Za)半(Ban)导(Dao)体(Ti)Doping concentration 掺(Chan)杂(Za)浓(Nong)度(Du)Double-diffusive MOS(DMOS)双(Shuang)扩(Kuo)散(San)MOS.Drift 漂(Piao)移(Yi)Drift field 漂(Piao)移(Yi)电(Dian)场(Chang)Drift mobility 迁(Qian)移(Yi)率(Lv)Dry etching 干(Gan)法(Fa)腐(Fu)蚀(Shi)Dry/wet oxidation 干(Gan)/湿(Shi)法(Fa)氧(Yang)化(Hua)Dose 剂(Ji)量(Liang)Duty cycle 工(Gong)作(Zuo)周(Zhou)期(Qi)Dual-in-line package （DIP） 双(Shuang)列(Lie)直(Zhi)插(Cha)式(Shi)封(Feng)装(Zhuang)Dynamics 动(Dong)态(Tai)Dynamic characteristics 动(Dong)态(Tai)属(Shu)性(Xing)Dynamic impedance 动(Dong)态(Tai)阻(Zu)抗(Kang)EEarly effect 厄(E)利(Li)效(Xiao)应(Ying)Early failure 早(Zao)期(Qi)失(Shi)效(Xiao)Effective mass 有(You)效(Xiao)质(Zhi)量(Liang)Einstein relation(ship) 爱(Ai)因(Yin)斯(Si)坦(Tan)关(Guan)系(Xi)Electric Erase Programmable Read Only Memory(E2PROM) 一(Yi)次(Ci)性(Xing)电(Dian)可(Ke)擦(Ba)除(Chu)只(Zhi)读(Du)存(Cun)储(Chu)器(Qi)Electrode 电(Dian)极(Ji)Electrominggratim 电(Dian)迁(Qian)移(Yi)Electron affinity 电(Dian)子(Zi)亲(Qin)和(He)势(Shi)Electronic -grade 电(Dian)子(Zi)能(Neng)Electron-beam photo-resist exposure 光(Guang)致(Zhi)抗(Kang)蚀(Shi)剂(Ji)的(De)电(Dian)子(Zi)束(Shu)曝(Pu)光(Guang)Electron gas 电(Dian)子(Zi)气(Qi)Electron-grade water 电(Dian)子(Zi)级(Ji)纯(Chun)水(Shui)Electron trapping center 电(Dian)子(Zi)俘(Fu)获(Huo)中(Zhong)心(Xin)Electron Volt (eV) 电(Dian)子(Zi)伏(Fu)Electrostatic 静(Jing)电(Dian)的(De)Element 元(Yuan)素(Su)/元(Yuan)件(Jian)/配(Pei)件(Jian)Elemental semiconductor 元(Yuan)素(Su)半(Ban)导(Dao)体(Ti)Ellipse 椭(Tuo)圆(Yuan)Ellipsoid 椭(Tuo)球(Qiu)Emitter 发(Fa)射(She)极(Ji)Emitter-coupled logic 发(Fa)射(She)极(Ji)耦(Zuo)合(He)逻(Luo)辑(Ji)Emitter-coupled pair 发(Fa)射(She)极(Ji)耦(Zuo)合(He)对(Dui)Emitter follower 射(She)随(Sui)器(Qi)Empty band 空(Kong)带(Dai)Emitter crowding effect 发(Fa)射(She)极(Ji)集(Ji)边(Bian)（拥(Yong)挤(Ji)）效(Xiao)应(Ying)Endurance test =life test 寿(Shou)命(Ming)测(Ce)试(Shi)Energy state 能(Neng)态(Tai)Energy momentum diagram 能(Neng)量(Liang)-动(Dong)量(Liang)(E-K)图(Tu)Enhancement mode 增(Zeng)强(Qiang)型(Xing)模(Mo)式(Shi)Enhancement MOS 增(Zeng)强(Qiang)性(Xing)MOS Entefic (低(Di))共(Gong)溶(Rong)的(De)Environmental test 环(Huan)境(Jing)测(Ce)试(Shi)Epitaxial 外(Wai)延(Yan)的(De)Epitaxial layer 外(Wai)延(Yan)层(Ceng)Epitaxial slice 外(Wai)延(Yan)片(Pian)Expitaxy 外(Wai)延(Yan)Equivalent curcuit 等(Deng)效(Xiao)电(Dian)路(Lu)Equilibrium majority /minority carriers 平(Ping)衡(Heng)多(Duo)数(Shu)/少(Shao)数(Shu)载(Zai)流(Liu)子(Zi)Erasable Programmable ROM (EPROM)可(Ke)搽(Cha)取(Qu)（编(Bian)程(Cheng)）存(Cun)储(Chu)器(Qi)Error function complement 余(Yu)误(Wu)差(Cha)函(Han)数(Shu)Etch 刻(Ke)蚀(Shi)Etchant 刻(Ke)蚀(Shi)剂(Ji)Etching mask 抗(Kang)蚀(Shi)剂(Ji)掩(Yan)模(Mo)Excess carrier 过(Guo)剩(Sheng)载(Zai)流(Liu)子(Zi)Excitation energy 激(Ji)发(Fa)能(Neng)Excited state 激(Ji)发(Fa)态(Tai)Exciton 激(Ji)子(Zi)Extrapolation 外(Wai)推(Tui)法(Fa)Extrinsic 非(Fei)本(Ben)征(Zheng)的(De)Extrinsic semiconductor 杂(Za)质(Zhi)半(Ban)导(Dao)体(Ti)FFace - centered 面(Mian)心(Xin)立(Li)方(Fang)Fall time 下(Xia)降(Jiang)时(Shi)间(Jian)Fan-in 扇(Shan)入(Ru)Fan-out 扇(Shan)出(Chu)Fast recovery 快(Kuai)恢(Hui)复(Fu)Fast surface states 快(Kuai)界(Jie)面(Mian)态(Tai)Feedback 反(Fan)馈(Kui)Fermi level 费(Fei)米(Mi)能(Neng)级(Ji)Fermi-Dirac Distribution 费(Fei)米(Mi)-狄(Di)拉(La)克(Ke)分(Fen)布(Bu)Femi potential 费(Fei)米(Mi)势(Shi)Fick equation 菲(Fei)克(Ke)方(Fang)程(Cheng)（扩(Kuo)散(San)）Field effect transistor 场(Chang)效(Xiao)应(Ying)晶(Jing)体(Ti)管(Guan)Field oxide 场(Chang)氧(Yang)化(Hua)层(Ceng)Filled band 满(Man)带(Dai)Film 薄(Bao)膜(Mo)Flash memory 闪(Shan)烁(Shuo)存(Cun)储(Chu)器(Qi)Flat band 平(Ping)带(Dai)Flat pack 扁(Bian)平(Ping)封(Feng)装(Zhuang)Flicker noise 闪(Shan)烁(Shuo)（变(Bian)）噪(Zao)声(Sheng)Flip-flop toggle 触(Chu)发(Fa)器(Qi)翻(Fan)转(Zhuan)Floating gate 浮(Fu)栅(Zha)Fluoride etch 氟(Fu)化(Hua)氢(Qing)刻(Ke)蚀(Shi)Forbidden band 禁(Jin)带(Dai)Forward bias 正(Zheng)向(Xiang)偏(Pian)置(Zhi)Forward blocking /conducting正(Zheng)向(Xiang)阻(Zu)断(Duan)/导(Dao)通(Tong)Frequency deviation noise频(Pin)率(Lv)漂(Piao)移(Yi)噪(Zao)声(Sheng)Frequency response 频(Pin)率(Lv)响(Xiang)应(Ying)Function 函(Han)数(Shu)GGain 增(Zeng)益(Yi)Gallium-Arsenide(GaAs) 砷(Shen)化(Hua)钾(Jia)Gamy ray r 射(She)线(Xian)Gate 门(Men)、栅(Zha)、控(Kong)制(Zhi)极(Ji)Gate oxide 栅(Zha)氧(Yang)化(Hua)层(Ceng)Gauss（ian） 高(Gao)斯(Si)Gaussian distribution profile 高(Gao)斯(Si)掺(Chan)杂(Za)分(Fen)布(Bu)Generation-recombination 产(Chan)生(Sheng)-复(Fu)合(He)Geometries 几(Ji)何(He)尺(Chi)寸(Cun)Germanium(Ge) 锗(Zhe)Graded 缓(Huan)变(Bian)的(De)Graded (gradual) channel 缓(Huan)变(Bian)沟(Gou)道(Dao)Graded junction 缓(Huan)变(Bian)结(Jie)Grain 晶(Jing)粒(Li)Gradient 梯(Ti)度(Du)Grown junction 生(Sheng)长(Chang)结(Jie)Guard ring 保(Bao)护(Hu)环(Huan)Gummel-Poom model 葛(Ge)谋(Mou)-潘(Pan) 模(Mo)型(Xing)Gunn - effect 狄(Di)氏(Shi)效(Xiao)应(Ying)HHardened device 辐(Fu)射(She)加(Jia)固(Gu)器(Qi)件(Jian)Heat of formation 形(Xing)成(Cheng)热(Re)Heat sink 散(San)热(Re)器(Qi)、热(Re)沉(Chen)Heavy/light hole band 重(Zhong)/轻(Qing) 空(Kong)穴(Xue)带(Dai)Heavy saturation 重(Zhong)掺(Chan)杂(Za)Hell - effect 霍(Huo)尔(Er)效(Xiao)应(Ying)Heterojunction 异(Yi)质(Zhi)结(Jie)Heterojunction structure 异(Yi)质(Zhi)结(Jie)结(Jie)构(Gou)Heterojunction Bipolar Transistor（HBT）异(Yi)质(Zhi)结(Jie)双(Shuang)极(Ji)型(Xing)晶(Jing)体(Ti)High field property 高(Gao)场(Chang)特(Te)性(Xing)High-performance MOS.( H-MOS)高(Gao)性(Xing)能(Neng)MOS. Hormalized 归(Gui)一(Yi)化(Hua)Horizontal epitaxial reactor 卧(Wo)式(Shi)外(Wai)延(Yan)反(Fan)应(Ying)器(Qi)Hot carrior 热(Re)载(Zai)流(Liu)子(Zi)Hybrid integration 混(Hun)合(He)集(Ji)成(Cheng)IImage - force 镜(Jing)象(Xiang)力(Li)Impact ionization 碰(Peng)撞(Zhuang)电(Dian)离(Li)Impedance 阻(Zu)抗(Kang)Imperfect structure 不(Bu)完(Wan)整(Zheng)结(Jie)构(Gou)Implantation dose 注(Zhu)入(Ru)剂(Ji)量(Liang)Implanted ion 注(Zhu)入(Ru)离(Li)子(Zi)Impurity 杂(Za)质(Zhi)Impurity scattering 杂(Za)志(Zhi)散(San)射(She)Incremental resistance 电(Dian)阻(Zu)增(Zeng)量(Liang)（微(Wei)分(Fen)电(Dian)阻(Zu)）In-contact mask 接(Jie)触(Chu)式(Shi)掩(Yan)模(Mo)Indium tin oxide (ITO) 铟(Zuo)锡(Xi)氧(Yang)化(Hua)物(Wu)Induced channel 感(Gan)应(Ying)沟(Gou)道(Dao)Infrared 红(Hong)外(Wai)的(De)Injection 注(Zhu)入(Ru)Input offset voltage 输(Shu)入(Ru)失(Shi)调(Diao)电(Dian)压(Ya)Insulator 绝(Jue)缘(Yuan)体(Ti)Insulated Gate FET(IGFET)绝(Jue)缘(Yuan)栅(Zha)FETIntegrated injection logic集(Ji)成(Cheng)注(Zhu)入(Ru)逻(Luo)辑(Ji)Integration 集(Ji)成(Cheng)、积(Ji)分(Fen)Interconnection 互(Hu)连(Lian)Interconnection time delay 互(Hu)连(Lian)延(Yan)时(Shi)Interdigitated structure 交(Jiao)互(Hu)式(Shi)结(Jie)构(Gou)Interface 界(Jie)面(Mian)Interference 干(Gan)涉(She)International system of unions国(Guo)际(Ji)单(Dan)位(Wei)制(Zhi)Internally scattering 谷(Gu)间(Jian)散(San)射(She)Interpolation 内(Nei)插(Cha)法(Fa)Intrinsic 本(Ben)征(Zheng)的(De)Intrinsic semiconductor 本(Ben)征(Zheng)半(Ban)导(Dao)体(Ti)Inverse operation 反(Fan)向(Xiang)工(Gong)作(Zuo)Inversion 反(Fan)型(Xing)Inverter 倒(Dao)相(Xiang)器(Qi)Ion 离(Li)子(Zi)Ion beam 离(Li)子(Zi)束(Shu)Ion etching 离(Li)子(Zi)刻(Ke)蚀(Shi)Ion implantation 离(Li)子(Zi)注(Zhu)入(Ru)Ionization 电(Dian)离(Li)Ionization energy 电(Dian)离(Li)能(Neng)Irradiation 辐(Fu)照(Zhao)Isolation land 隔(Ge)离(Li)岛(Dao)Isotropic 各(Ge)向(Xiang)同(Tong)性(Xing)JJunction FET(JFET) 结(Jie)型(Xing)场(Chang)效(Xiao)应(Ying)管(Guan)Junction isolation 结(Jie)隔(Ge)离(Li)Junction spacing 结(Jie)间(Jian)距(Ju)Junction side-wall 结(Jie)侧(Ce)壁(Bi)LLatch up 闭(Bi)锁(Suo)Lateral 横(Heng)向(Xiang)的(De)Lattice 晶(Jing)格(Ge)Layout 版(Ban)图(Tu)Latticebinding/cell/constant/defect/distortion 晶(Jing)格(Ge)结(Jie)合(He)力(Li)/晶(Jing)胞(Bao)/晶(Jing)格(Ge)/晶(Jing)格(Ge)常(Chang)熟(Shu)/晶(Jing)格(Ge)缺(Que)陷(Xian)/晶(Jing)格(Ge)畸(Ji)变(Bian)Leakage current （泄(Xie)）漏(Lou)电(Dian)流(Liu)Level shifting 电(Dian)平(Ping)移(Yi)动(Dong)Life time 寿(Shou)命(Ming)linearity 线(Xian)性(Xing)度(Du)Linked bond 共(Gong)价(Jia)键(Jian)Liquid Nitrogen 液(Ye)氮(Dan)Liquid－phase epitaxial growth technique 液(Ye)相(Xiang)外(Wai)延(Yan)生(Sheng)长(Chang)技(Ji)术(Shu)Lithography 光(Guang)刻(Ke)Light Emitting Diode(LED) 发(Fa)光(Guang)二(Er)极(Ji)管(Guan)Load line or Variable 负(Fu)载(Zai)线(Xian)Locating and Wiring 布(Bu)局(Ju)布(Bu)线(Xian)Longitudinal 纵(Zong)向(Xiang)的(De)Logic swing 逻(Luo)辑(Ji)摆(Bai)幅(Fu)Lorentz 洛(Luo)沦(Lun)兹(Zi)Lumped model 集(Ji)总(Zong)模(Mo)型(Xing)MMajority carrier 多(Duo)数(Shu)载(Zai)流(Liu)子(Zi)Mask 掩(Yan)膜(Mo)板(Ban)，光(Guang)刻(Ke)板(Ban)Mask level 掩(Yan)模(Mo)序(Xu)号(Hao)Mask set 掩(Yan)模(Mo)组(Zu)Mass - action law质(Zhi)量(Liang)守(Shou)恒(Heng)定(Ding)律(Lv)Master-slave D flip-flop主(Zhu)从(Cong)D触(Chu)发(Fa)器(Qi)Matching 匹(Pi)配(Pei)Maxwell 麦(Mai)克(Ke)斯(Si)韦(Wei)Mean free path 平(Ping)均(Jun)自(Zi)由(You)程(Cheng)Meandered emitter junction梳(Shu)状(Zhuang)发(Fa)射(She)极(Ji)结(Jie)Mean time before failure (MTBF) 平(Ping)均(Jun)工(Gong)作(Zuo)时(Shi)间(Jian)Megeto - resistance 磁(Ci)阻(Zu)Mesa 台(Tai)面(Mian)MESFET-Metal Semiconductor金(Jin)属(Shu)半(Ban)导(Dao)体(Ti)FETMetallization 金(Jin)属(Shu)化(Hua)Microelectronic technique 微(Wei)电(Dian)子(Zi)技(Ji)术(Shu)Microelectronics 微(Wei)电(Dian)子(Zi)学(Xue)Millen indices 密(Mi)勒(Le)指(Zhi)数(Shu)Minority carrier 少(Shao)数(Shu)载(Zai)流(Liu)子(Zi)Misfit 失(Shi)配(Pei)Mismatching 失(Shi)配(Pei)Mobile ions 可(Ke)动(Dong)离(Li)子(Zi)Mobility 迁(Qian)移(Yi)率(Lv)Module 模(Mo)块(Kuai)Modulate 调(Diao)制(Zhi)Molecular crystal分(Fen)子(Zi)晶(Jing)体(Ti)Monolithic IC 单(Dan)片(Pian)ICMOSFET金(Jin)属(Shu)氧(Yang)化(Hua)物(Wu)半(Ban)导(Dao)体(Ti)场(Chang)效(Xiao)应(Ying)晶(Jing)体(Ti)管(Guan)Mos. Transistor(MOST )MOS. 晶(Jing)体(Ti)管(Guan)Multiplication 倍(Bei)增(Zeng)Modulator 调(Diao)制(Zhi)Multi-chip IC 多(Duo)芯(Xin)片(Pian)ICMulti-chip module(MCM) 多(Duo)芯(Xin)片(Pian)模(Mo)块(Kuai)Multiplication coefficient倍(Bei)增(Zeng)因(Yin)子(Zi)NNaked chip 未(Wei)封(Feng)装(Zhuang)的(De)芯(Xin)片(Pian)（裸(Luo)片(Pian)）Negative feedback 负(Fu)反(Fan)馈(Kui)Negative resistance 负(Fu)阻(Zu)Nesting 套(Tao)刻(Ke)Negative-temperature-coefficient 负(Fu)温(Wen)度(Du)系(Xi)数(Shu)Noise margin 噪(Zao)声(Sheng)容(Rong)限(Xian)Nonequilibrium 非(Fei)平(Ping)衡(Heng)Nonrolatile 非(Fei)挥(Hui)发(Fa)（易(Yi)失(Shi)）性(Xing)Normally off/on 常(Chang)闭(Bi)/开(Kai)Numerical analysis 数(Shu)值(Zhi)分(Fen)析(Xi)OOccupied band 满(Man)带(Dai)Officienay 功(Gong)率(Lv)Offset 偏(Pian)移(Yi)、失(Shi)调(Diao)On standby 待(Dai)命(Ming)状(Zhuang)态(Tai)Ohmic contact 欧(Ou)姆(Mu)接(Jie)触(Chu)Open circuit 开(Kai)路(Lu)Operating point 工(Gong)作(Zuo)点(Dian)Operating bias 工(Gong)作(Zuo)偏(Pian)置(Zhi)Operational amplifier (OPAMP)运(Yun)算(Suan)放(Fang)大(Da)器(Qi)Optical photon =photon 光(Guang)子(Zi)Optical quenching光(Guang)猝(Zuo)灭(Mie)Optical transition 光(Guang)跃(Yue)迁(Qian)Optical-coupled isolator光(Guang)耦(Zuo)合(He)隔(Ge)离(Li)器(Qi)Organic semiconductor有(You)机(Ji)半(Ban)导(Dao)体(Ti)Orientation 晶(Jing)向(Xiang)、定(Ding)向(Xiang)Outline 外(Wai)形(Xing)Out-of-contact mask非(Fei)接(Jie)触(Chu)式(Shi)掩(Yan)模(Mo)Output characteristic 输(Shu)出(Chu)特(Te)性(Xing)Output voltage swing 输(Shu)出(Chu)电(Dian)压(Ya)摆(Bai)幅(Fu)Overcompensation 过(Guo)补(Bu)偿(Chang)Over-current protection 过(Guo)流(Liu)保(Bao)护(Hu)Over shoot 过(Guo)冲(Chong)Over-voltage protection 过(Guo)压(Ya)保(Bao)护(Hu)Overlap 交(Jiao)迭(Die)Overload 过(Guo)载(Zai)Oscillator 振(Zhen)荡(Dang)器(Qi)Oxide 氧(Yang)化(Hua)物(Wu)Oxidation 氧(Yang)化(Hua)Oxide passivation 氧(Yang)化(Hua)层(Ceng)钝(Dun)化(Hua)PPackage 封(Feng)装(Zhuang)Pad 压(Ya)焊(Han)点(Dian)Parameter 参(Can)数(Shu)Parasitic effect 寄(Ji)生(Sheng)效(Xiao)应(Ying)Parasitic oscillation 寄(Ji)生(Sheng)振(Zhen)荡(Dang)Passination 钝(Dun)化(Hua)Passive component 无(Wu)源(Yuan)元(Yuan)件(Jian)Passive device 无(Wu)源(Yuan)器(Qi)件(Jian)Passive surface 钝(Dun)化(Hua)界(Jie)面(Mian)Parasitic transistor 寄(Ji)生(Sheng)晶(Jing)体(Ti)管(Guan)Peak-point voltage 峰(Feng)点(Dian)电(Dian)压(Ya)Peak voltage 峰(Feng)值(Zhi)电(Dian)压(Ya)Permanent-storage circuit 永(Yong)久(Jiu)存(Cun)储(Chu)电(Dian)路(Lu)Period 周(Zhou)期(Qi)Periodic table 周(Zhou)期(Qi)表(Biao)Permeable - base 可(Ke)渗(Shen)透(Tou)基(Ji)区(Qu)Phase-lock loop 锁(Suo)相(Xiang)环(Huan)Phase drift 相(Xiang)移(Yi)Phonon spectra 声(Sheng)子(Zi)谱(Pu)Photo conduction 光(Guang)电(Dian)导(Dao)Photo diode 光(Guang)电(Dian)二(Er)极(Ji)管(Guan)Photoelectric cell 光(Guang)电(Dian)池(Chi)Photoelectric effect 光(Guang)电(Dian)效(Xiao)应(Ying)Photoenic devices 光(Guang)子(Zi)器(Qi)件(Jian)Photolithographic process 光(Guang)刻(Ke)工(Gong)艺(Yi)(photo) resist （光(Guang)敏(Min)）抗(Kang)腐(Fu)蚀(Shi)剂(Ji)Pin 管(Guan)脚(Jiao)Pinch off 夹(Jia)断(Duan)Pinning of Fermi level 费(Fei)米(Mi)能(Neng)级(Ji)的(De)钉(Ding)扎(Zha)（效(Xiao)应(Ying)）Planar process 平(Ping)面(Mian)工(Gong)艺(Yi)Planar transistor 平(Ping)面(Mian)晶(Jing)体(Ti)管(Guan)Plasma 等(Deng)离(Li)子(Zi)体(Ti)Plezoelectric effect 压(Ya)电(Dian)效(Xiao)应(Ying)Poisson equation 泊(Bo)松(Song)方(Fang)程(Cheng)Point contact 点(Dian)接(Jie)触(Chu)Polarity 极(Ji)性(Xing)Polycrystal 多(Duo)晶(Jing)Polymer semiconductor聚(Ju)合(He)物(Wu)半(Ban)导(Dao)体(Ti)Poly-silicon 多(Duo)晶(Jing)硅(Gui)Potential (电(Dian))势(Shi)Potential barrier 势(Shi)垒(Lei)Potential well 势(Shi)阱(Zuo)Power dissipation 功(Gong)耗(Hao)Power transistor 功(Gong)率(Lv)晶(Jing)体(Ti)管(Guan)Preamplifier 前(Qian)置(Zhi)放(Fang)大(Da)器(Qi)Primary flat 主(Zhu)平(Ping)面(Mian)Principal axes 主(Zhu)轴(Zhou)Print-circuit board(PCB) 印(Yin)制(Zhi)电(Dian)路(Lu)板(Ban)Probability 几(Ji)率(Lv)Probe 探(Tan)针(Zhen)Process 工(Gong)艺(Yi)Propagation delay 传(Chuan)输(Shu)延(Yan)时(Shi)Pseudopotential method 膺(Zuo)势(Shi)发(Fa)Punch through 穿(Chuan)通(Tong)Pulse triggering/modulating 脉(Mai)冲(Chong)触(Chu)发(Fa)/调(Diao)制(Zhi)Pulse Widen Modulator(PWM) 脉(Mai)冲(Chong)宽(Kuan)度(Du)调(Diao)制(Zhi)Punchthrough 穿(Chuan)通(Tong)Push-pull stage 推(Tui)挽(Wan)级(Ji)QQuality factor 品(Pin)质(Zhi)因(Yin)子(Zi)Quantization 量(Liang)子(Zi)化(Hua)Quantum 量(Liang)子(Zi)Quantum efficiency量(Liang)子(Zi)效(Xiao)应(Ying)Quantum mechanics 量(Liang)子(Zi)力(Li)学(Xue)Quasi – Fermi－level准(Zhun)费(Fei)米(Mi)能(Neng)级(Ji)Quartz 石(Shi)英(Ying)RRadiation conductivity 辐(Fu)射(She)电(Dian)导(Dao)率(Lv)Radiation damage 辐(Fu)射(She)损(Sun)伤(Shang)Radiation flux density 辐(Fu)射(She)通(Tong)量(Liang)密(Mi)度(Du)Radiation hardening 辐(Fu)射(She)加(Jia)固(Gu)Radiation protection 辐(Fu)射(She)保(Bao)护(Hu)Radiative - recombination辐(Fu)照(Zhao)复(Fu)合(He)Radioactive 放(Fang)射(She)性(Xing)Reach through 穿(Chuan)通(Tong)Reactive sputtering source 反(Fan)应(Ying)溅(Jian)射(She)源(Yuan)Read diode 里(Li)德(De)二(Er)极(Ji)管(Guan)Recombination 复(Fu)合(He)Recovery diode 恢(Hui)复(Fu)二(Er)极(Ji)管(Guan)Reciprocal lattice 倒(Dao)核(He)子(Zi)Recovery time 恢(Hui)复(Fu)时(Shi)间(Jian)Rectifier 整(Zheng)流(Liu)器(Qi)（管(Guan)）Rectifying contact 整(Zheng)流(Liu)接(Jie)触(Chu)Reference 基(Ji)准(Zhun)点(Dian) 基(Ji)准(Zhun) 参(Can)考(Kao)点(Dian)Refractive index 折(Zhe)射(She)率(Lv)Register 寄(Ji)存(Cun)器(Qi)Registration 对(Dui)准(Zhun)Regulate 控(Kong)制(Zhi) 调(Diao)整(Zheng)Relaxation lifetime 驰(Chi)豫(Yu)时(Shi)间(Jian)Reliability 可(Ke)靠(Kao)性(Xing)Resonance 谐(Xie)振(Zhen)Resistance 电(Dian)阻(Zu)Resistor 电(Dian)阻(Zu)器(Qi)Resistivity 电(Dian)阻(Zu)率(Lv)Regulator 稳(Wen)压(Ya)管(Guan)（器(Qi)）Relaxation 驰(Chi)豫(Yu)Resonant frequency共(Gong)射(She)频(Pin)率(Lv)Response time 响(Xiang)应(Ying)时(Shi)间(Jian)Reverse 反(Fan)向(Xiang)的(De)Reverse bias 反(Fan)向(Xiang)偏(Pian)置(Zhi)SSampling circuit 取(Qu)样(Yang)电(Dian)路(Lu)Sapphire 蓝(Lan)宝(Bao)石(Shi)（Al2O3）Satellite valley 卫(Wei)星(Xing)谷(Gu)Saturated current range电(Dian)流(Liu)饱(Bao)和(He)区(Qu)Saturation region 饱(Bao)和(He)区(Qu)Saturation 饱(Bao)和(He)的(De)Scaled down 按(An)比(Bi)例(Li)缩(Suo)小(Xiao)Scattering 散(San)射(She)Schockley diode 肖(Xiao)克(Ke)莱(Lai)二(Er)极(Ji)管(Guan)Schottky 肖(Xiao)特(Te)基(Ji)Schottky barrier 肖(Xiao)特(Te)基(Ji)势(Shi)垒(Lei)Schottky contact 肖(Xiao)特(Te)基(Ji)接(Jie)触(Chu)Schrodingen 薛(Xue)定(Ding)厄(E)Scribing grid 划(Hua)片(Pian)格(Ge)Secondary flat 次(Ci)平(Ping)面(Mian)Seed crystal 籽(Zi)晶(Jing)Segregation 分(Fen)凝(Ning)Selectivity 选(Xuan)择(Ze)性(Xing)Self aligned 自(Zi)对(Dui)准(Zhun)的(De)Self diffusion 自(Zi)扩(Kuo)散(San)Semiconductor 半(Ban)导(Dao)体(Ti)Semiconductor-controlled rectifier 可(Ke)控(Kong)硅(Gui)Sendsitivity 灵(Ling)敏(Min)度(Du)Serial 串(Chuan)行(Xing)/串(Chuan)联(Lian)Series inductance 串(Chuan)联(Lian)电(Dian)感(Gan)Settle time 建(Jian)立(Li)时(Shi)间(Jian)Sheet resistance 薄(Bao)层(Ceng)电(Dian)阻(Zu)Shield 屏(Ping)蔽(Bi)Short circuit 短(Duan)路(Lu)Shot noise 散(San)粒(Li)噪(Zao)声(Sheng)Shunt 分(Fen)流(Liu)Sidewall capacitance边(Bian)墙(Qiang)电(Dian)容(Rong)Signal 信(Xin)号(Hao)Silica glass 石(Shi)英(Ying)玻(Bo)璃(Li)Silicon 硅(Gui)Silicon carbide 碳(Tan)化(Hua)硅(Gui)Silicon dioxide (SiO2) 二(Er)氧(Yang)化(Hua)硅(Gui)Silicon Nitride(Si3N4) 氮(Dan)化(Hua)硅(Gui)Silicon On Insulator 绝(Jue)缘(Yuan)硅(Gui)Siliver whiskers 银(Yin)须(Xu)Simple cubic 简(Jian)立(Li)方(Fang)Single crystal 单(Dan)晶(Jing)Sink 沉(Chen)Skin effect 趋(Qu)肤(Fu)效(Xiao)应(Ying)Snap time 急(Ji)变(Bian)时(Shi)间(Jian)Sneak path 潜(Qian)行(Xing)通(Tong)路(Lu)Sulethreshold 亚(Ya)阈(Zuo)的(De)Solar battery/cell 太(Tai)阳(Yang)能(Neng)电(Dian)池(Chi)Solid circuit 固(Gu)体(Ti)电(Dian)路(Lu)Solid Solubility 固(Gu)溶(Rong)度(Du)Sonband 子(Zi)带(Dai)Source 源(Yuan)极(Ji)Source follower 源(Yuan)随(Sui)器(Qi)Space charge 空(Kong)间(Jian)电(Dian)荷(He)Specific heat(PT) 热(Re)Speed-power product 速(Su)度(Du)功(Gong)耗(Hao)乘(Cheng)积(Ji)Spherical 球(Qiu)面(Mian)的(De)Spin 自(Zi)旋(Xuan) Split 分(Fen)裂(Lie)Spontaneous emission 自(Zi)发(Fa)发(Fa)射(She)Spreading resistance扩(Kuo)展(Zhan)电(Dian)阻(Zu)Sputter 溅(Jian)射(She)Stacking fault 层(Ceng)错(Cuo)Static characteristic 静(Jing)态(Tai)特(Te)性(Xing)Stimulated emission 受(Shou)激(Ji)发(Fa)射(She)Stimulated recombination 受(Shou)激(Ji)复(Fu)合(He)Storage time 存(Cun)储(Chu)时(Shi)间(Jian)Stress 应(Ying)力(Li)Straggle 偏(Pian)差(Cha)Sublimation 升(Sheng)华(Hua)Substrate 衬(Chen)底(Di)Substitutional 替(Ti)位(Wei)式(Shi)的(De)Superlattice 超(Chao)晶(Jing)格(Ge)Supply 电(Dian)源(Yuan)Surface 表(Biao)面(Mian)Surge capacity 浪(Lang)涌(Yong)能(Neng)力(Li)Subscript 下(Xia)标(Biao)Switching time 开(Kai)关(Guan)时(Shi)间(Jian)Switch 开(Kai)关(Guan)TTailing 扩(Kuo)展(Zhan)Terminal 终(Zhong)端(Duan)Tensor 张(Zhang)量(Liang) Tensorial 张(Zhang)量(Liang)的(De)Thermal activation 热(Re)激(Ji)发(Fa)Thermal conductivity 热(Re)导(Dao)率(Lv)Thermal equilibrium 热(Re)平(Ping)衡(Heng)Thermal Oxidation 热(Re)氧(Yang)化(Hua)Thermal resistance 热(Re)阻(Zu)Thermal sink 热(Re)沉(Chen)Thermal velocity 热(Re)运(Yun)动(Dong)Thermoelectricpovoer 温(Wen)差(Cha)电(Dian)动(Dong)势(Shi)率(Lv)Thick-film technique 厚(Hou)膜(Mo)技(Ji)术(Shu)Thin-film hybrid IC薄(Bao)膜(Mo)混(Hun)合(He)集(Ji)成(Cheng)电(Dian)路(Lu)Thin-Film Transistor(TFT) 薄(Bao)膜(Mo)晶(Jing)体(Ti)Threshlod 阈(Zuo)值(Zhi)Thyistor 晶(Jing)闸(Zha)管(Guan)Transconductance 跨(Kua)导(Dao)Transfer characteristic 转(Zhuan)移(Yi)特(Te)性(Xing)Transfer electron 转(Zhuan)移(Yi)电(Dian)子(Zi)Transfer function 传(Chuan)输(Shu)函(Han)数(Shu)Transient 瞬(Shun)态(Tai)的(De)Transistor aging(stress) 晶(Jing)体(Ti)管(Guan)老(Lao)化(Hua)Transit time 渡(Du)越(Yue)时(Shi)间(Jian)Transition 跃(Yue)迁(Qian)Transition-metal silica 过(Guo)度(Du)金(Jin)属(Shu)硅(Gui)化(Hua)物(Wu)Transition probability 跃(Yue)迁(Qian)几(Ji)率(Lv)Transition region 过(Guo)渡(Du)区(Qu)Transport 输(Shu)运(Yun) Transverse 横(Heng)向(Xiang)的(De)Trap 陷(Xian)阱(Zuo) Trapping 俘(Fu)获(Huo)Trapped charge 陷(Xian)阱(Zuo)电(Dian)荷(He)Triangle generator 三(San)角(Jiao)波(Bo)发(Fa)生(Sheng)器(Qi)Triboelectricity 摩(Mo)擦(Ba)电(Dian)Trigger 触(Chu)发(Fa)Trim 调(Diao)配(Pei) 调(Diao)整(Zheng)Triple diffusion 三(San)重(Zhong)扩(Kuo)散(San)Truth table 真(Zhen)值(Zhi)表(Biao)Tolerahce 容(Rong)差(Cha)Tunnel(ing) 隧(Sui)道(Dao)（穿(Chuan)）Tunnel current 隧(Sui)道(Dao)电(Dian)流(Liu)Turn over 转(Zhuan)折(Zhe)Turn - off time 关(Guan)断(Duan)时(Shi)间(Jian)UUltraviolet 紫(Zi)外(Wai)的(De)Unijunction 单(Dan)结(Jie)的(De)Unipolar 单(Dan)极(Ji)的(De)Unit cell 原(Yuan)（元(Yuan)）胞(Bao)Unity-gain frequency 单(Dan)位(Wei)增(Zeng)益(Yi)频(Pin)率(Lv)Unilateral-switch单(Dan)向(Xiang)开(Kai)关(Guan)VVacancy 空(Kong)位(Wei)Vacuum 真(Zhen)空(Kong)Valence(value) band 价(Jia)带(Dai)Value band edge 价(Jia)带(Dai)顶(Ding)Valence bond 价(Jia)键(Jian)Vapour phase 汽(Qi)相(Xiang)Varactor 变(Bian)容(Rong)管(Guan)Varistor 变(Bian)阻(Zu)器(Qi)Vibration 振(Zhen)动(Dong)Voltage 电(Dian)压(Ya)WWafer 晶(Jing)片(Pian)Wave equation 波(Bo)动(Dong)方(Fang)程(Cheng)Wave guide 波(Bo)导(Dao)Wave number 波(Bo)数(Shu)Wave-particle duality 波(Bo)粒(Li)二(Er)相(Xiang)性(Xing)Wear-out 烧(Shao)毁(Hui)Wire routing 布(Bu)线(Xian)Work function 功(Gong)函(Han)数(Shu)Worst-case device 最(Zui)坏(Huai)情(Qing)况(Kuang)器(Qi)件(Jian)YYield 成(Cheng)品(Pin)率(Lv)ZZener breakdown 齐(Qi)纳(Na)击(Ji)穿(Chuan)Zone melting 区(Qu)熔(Rong)法(Fa)免(Mian)责(Ze)声(Sheng)明(Ming)：本(Ben)文(Wen)系(Xi)网(Wang)络(Luo)转(Zhuan)载(Zai)，版(Ban)权(Quan)归(Gui)原(Yuan)作(Zuo)者(Zhe)所(Suo)有(You)。更(Geng)多(Duo)干(Gan)货(Huo)内(Nei)容(Rong)只(Zhi)需(Xu)要(Yao)你(Ni)关(Guan)注(Zhu)电(Dian)子(Zi)芯(Xin)吧(Ba)客(Ke)微(Wei)信(Xin)公(Gong)众(Zhong)号(Hao)！了(Liao)解(Jie)更(Geng)多(Duo)
肠补颈濒颈补苍蝉丑别丑耻辞虫颈，肠辞苍驳肠丑别苍驳产别苍箩颈补辞诲耻濒补颈办补苍，测颈锄丑颈濒颈耻肠丑辞苍驳诲颈补苍锄丑耻补苍驳飞别颈濒颈，肠丑辞苍驳诲颈补苍锄丑耻补苍驳丑别虫颈苍蝉丑别产别颈蝉丑颈肠丑辞苍驳诲颈补苍尘辞办耻补颈，辩颈锄耻辞测辞苍驳蝉丑颈箩颈补苍驳箩颈补辞濒颈耻诲颈补苍飞补苍驳锄丑辞苍驳诲别箩颈补辞濒颈耻诲颈补苍锄丑耻补苍丑耻补苍飞别颈办别测颈飞别颈诲颈补苍肠丑颈肠丑辞苍驳诲颈补苍诲别锄丑颈濒颈耻诲颈补苍，锄丑补苍肠丑辞苍驳诲颈补苍锄丑耻补苍驳箩颈补苍锄补辞肠丑别苍驳产别苍产颈濒颈诲别40%-50%锄耻辞测辞耻。锄颈箩颈诲补苍驳蝉丑颈锄丑别苍驳肠丑别苍驳锄耻辞肠辞苍驳驳耻补苍驳锄丑辞耻蹿别颈飞补苍驳丑补苍驳锄丑辞耻诲别丑补苍驳产补苍，产耻办别苍别苍驳辩颈苍濒颈苍虫颈补苍肠丑补苍驳。
而(贰谤)她(罢补)本(叠别苍)人(搁别苍)在(窜补颈)被(叠别颈)网(奥补苍驳)友(驰辞耻)追(窜丑耻颈)着(窜丑耻辞)骂(惭补)了(尝颈补辞)将(闯颈补苍驳)近(闯颈苍)十(厂丑颈)年(狈颈补苍)后(贬辞耻)终(窜丑辞苍驳)于(驰耻)在(窜补颈)2019年(狈颈补苍)为(奥别颈)自(窜颈)己(闯颈)发(贵补)声(厂丑别苍驳)道(顿补辞)：“当(顿补苍驳)年(狈颈补苍)所(厂耻辞)说(厂丑耻辞)的(顿别)话(贬耻补)不(叠耻)过(骋耻辞)是(厂丑颈)开(碍补颈)玩(奥补苍)笑(齿颈补辞)，而(贰谤)节(闯颈别)目(惭耻)原(驰耻补苍)本(叠别苍)就(闯颈耻)是(厂丑颈)一(驰颈)个(骋别)剧(闯耻)本(叠别苍)。”
她刚复查完身体，结果是没变化，好着呢，另一条消息也像是锦上添花一样，从她的手机信息里往外冒。媒体稿:双耀眩目,震撼视野至极 - 体验vivo X100s全新视觉盛宴《对于爱人是邪神这件小事》山蓝鸲咕咕咕 ^第7章^...
·最后再说说缺点卡罗拉锐放虽然定位紧凑型厂鲍痴但车内的空间并不大尤其是后排座的空间坐3个成年人并不怎么宽裕还有后扭力梁式非独立悬架包括内饰的硬塑料都是最大的槽点此外低配的织物座椅、卤素大灯好像也没有倒车影像