乱伦秘史最新章节列表冲乱伦秘史全文免费阅读(谤补苍诲补濒濒...
随着新能源技术的突飞猛进，燃油车昔日辉煌渐行渐远，燃油车的市场份额正在被一步步蚕食。当电动车充电站如雨后春笋般出现，而加油站却渐渐淡出视线，这意味着什么？没错，燃油车的黄金时代正缓缓落下帷幕。
2025年01月02日，此前，陆正耀在2023年3月、2023年7月、2024年1月还有叁条被执行信息，执行标的金额总计超过11亿元——加上4月7日新增的被执行信息，大致一年的时间内陆正耀已经被执行近30亿元。
乱伦秘史最新章节列表冲乱伦秘史全文免费阅读(谤补苍诲补濒濒...
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ganjinshoucang，bandaotiyixieshuyudezhongyingwenduizhao2020-05-21 15:59·dianzixinbakechangyongbandaotizhongyingduizhaobiaolizizhuruji ion implanterLSSlilun Lindhand Scharff and Schiott theory，youcheng“linhande-sikafu-sigaotelilun”。goudaoxiaoying channeling effectshechengfenbu range distributionshendufenbu depth distributiontouyingshecheng projected rangezuzhijuli stopping distancezuzhibenling stopping powerbiaozhunzuzhijiemian standard stopping cross sectiontuihuo annealingjihuoneng activation energydengwentuihuo isothermal annealingjiguangtuihuo laser annealingyingliganshengquexian stress-induced defectzeyouquxiang preferred orientationzhibangongyi mask-making technologytuxingjibian pattern distortionchusuo first minificationjingsuo final minificationmuban master maskgeban chromium plateganban dry platerujiaoban emulsion platetoumingban see-through plategaofenbianlvban high resolution plate, HRPchaoweiliganban plate forultra-microminiaturizationyanmo maskyanmoduizhun mask alignmentduizhunjingdu alignment precisionguangkejiao photoresist，youcheng“guangzhikangshiji”。fuxingguangkejiao negative photoresistzhengxingguangkejiao positive photoresistwujiguangkejiao inorganic resistduocengguangkejiao multilevel resistdianzishuguangkejiao electron beam resistXshexianguangkejiao X-ray resistshuaxi scrubbingshuaijiao spinningtujiao photoresist coatinghouhong postbakingguangke photolithographyXshexianguangke X-ray lithographydianzishuguangke electron beam lithographylizishuguangke ion beam lithographyshenziwaiguangke deep-UV lithographyguangkeji mask alignertouyingguangkeji projection mask alignerpuguang exposurejiechushipuguangfa contact exposure methodjiejinshipuguangfa proximity exposure methodguangxuetouyingpuguangfa optical projection exposure methoddianzishupuguangxitong electron beam exposure systemfenbuzhongfuxitong step-and-repeat systemxianying developmentxiankuan linewidthqujiao stripping of photoresistyanghuaqujiao removing of photoresist by oxidationdenglizi［ti］qujiao removing of photoresist by plasmakeshi etchingganfakeshi dry etchingfanyinglizikeshi reactive ion etching, RIEgexiangtongxingkeshi isotropic etchinggexiangyixingkeshi anisotropic etchingfanyingjianshekeshi reactive sputter etchinglizixi ion beam milling，youcheng“lizimoxiao”。denglizi［ti］keshi plasma etchingzuanshi undercuttingbaolijishu lift-off technology，youcheng“futuogongyi”。zhongdianjiance endpoint monitoringjinshuhua metallizationhulian interconnectionduocengjinshuhua multilevel metallizationdianqianzuo electromigrationhuiliu reflowlinguiboli phosphorosilicate glasspenglinguiboli boron-phosphorosilicate glassdunhuagongyi passivation technologyduocengjiezhidunhua multilayer dielectric passivationhuapian scribingdianzishuqiepian electron beam slicingshaojie sinteringyinya indentationreyahan thermocompression bondingrechaoshenghan thermosonic bondinglenghan cold weldingdianhan spot weldingqiuhan ball bondingxiehan wedge bondingneiyinxianhanjie inner lead bondingwaiyinxianhanjie outer lead bondingliangshiyinxian beam leadzhuangjiagongyi mounting technologyfuzhuo adhesionfengzhuang packagingjinshufengzhuang metallic packagingtaocifengzhuang ceramic packagingbianpingfengzhuang flat packagingsufeng plastic packagebolifengzhuang glass packagingweifengzhuang micropackaging，youcheng“weizuzhuang”。guanke packageguanxin dieyinxianjianhe lead bondingyinxiankuangshijianhe lead frame bondingdaishizidongjianhe tape automated bonding, TABjiguangjianhe laser bondingchaoshengjianhe ultrasonic bondinghongwaijianhe infrared bondingweidianzicidiandajihe（anshouzimushunxupaixu）AAbrupt junction tubianjieAccelerated testing jiasushiyanAcceptor shouzhuAcceptor atom shouzhuyuanziAccumulation jilei、duijiAccumulating contact jileijiechuAccumulation region jileiquAccumulation layer jileicengActive region youyuanquActive component youyuanyuanActive device youyuanqijianActivation jihuoActivation energy jihuonengActive region youyuan（fangda）quAdmittance daonaAllowed band yundaiAlloy-junction devicehejinjieqijianAluminum(Aluminium) lvAluminum – oxide lvyanghuawuAluminum passivation lvdunhuaAmbipolar shuangjideAmbient temperature huanjingwenduAmorphous wudingxingde，feijingtideAmplifier gongfang kuoyinqi fangdaqiAnalogue(Analog) comparator monibijiaoqiAngstrom aiAnneal tuihuoAnisotropic gexiangyixingdeAnode yangjiArsenic (AS) shenAuger exieAuger process exieguochengAvalanche xuebengAvalanche breakdown xuebengjichuanAvalanche excitationxuebengjifaBBackground carrier bendizailiuziBackground doping bendichanzaBackward fanxiangBackward bias fanxiangpianzhiBallasting resistor zhengliudianzuBall bond qiuxingjianheBand nengdaiBand gap nengdaijianxiBarrier shileiBarrier layer shileicengBarrier width shileikuanduBase jijiBase contact jiqujiechuBase stretching jiqukuozhanxiaoyingBase transit time jiquduyueshijianBase transport efficiencyjiqushuyunxishuBase-width modulationjiqukuandudiaozhiBasis vector jishiBias pianzhiBilateral switch shuangxiangkaiguanBinary code erjinzhidaimaBinary compound semiconductor eryuanhuahewubandaotiBipolar shuangjixingdeBipolar Junction Transistor (BJT)shuangjijingtiguanBloch buluoheBlocking band zudangnengdaiBlocking contact zudangjiechuBody - centered tixinlifangBody-centred cubic structure tilixinjiegouBoltzmann boerzimanBond jian、jianheBonding electron jiadianziBonding pad jianhedianBootstrap circuit zijudianluBootstrapped emitter follower zijushejigensuiqiBoron pengBorosilicate glass pengguiboliBoundary condition bianjietiaojianBound electron shufudianziBreadboard moniban、shiyanbanBreak down jichuanBreak over zhuanzheBrillouin buliyuanBrillouin zone buliyuanquBuilt-in neijiandeBuild-in electric field neijiandianchangBulk ti/tineiBulk absorption tixishouBulk generation tichanshengBulk recombination tifuheBurn - in laohuaBurn out shaohuiBuried channel maigouBuried diffusion region yinmaikuosanquCCan waikeCapacitance dianrongCapture cross section fuhuojiemianCapture carrier fuhuozailiuziCarrier zailiuzi、zaiboCarry bit jinweiweiCarry-in bit jinweishuruCarry-out bit jinweishuchuCascade jilianCase guankeCathode yinjiCenter zhongxinCeramic taoci（de）Channel goudaoChannel breakdown goudaojichuanChannel current goudaodianliuChannel doping goudaochanzaChannel shortening goudaosuoduanChannel width goudaokuanduCharacteristic impedance tezhengzukangCharge dianhe、chongdianCharge-compensation effects dianhebuchangxiaoyingCharge conservation dianheshouhengCharge neutrality condition dianzhongxingtiaojianChargedrive/exchange/sharing/transfer/storage dianhequdong/jiaohuan/gongxiang/zhuanyi/cunchuChemmical etching huaxuefushifaChemically-Polish huaxuepaoguangChemmically-Mechanically Polish (CMP) huaxuejixiepaoguangChip xinpianChip yield xinpianchengpinlvClamped zuoweiClamping diode zuoweierjiguanCleavage plane jielimianClock rate shizhongpinlvClock generator shizhongfashengqiClock flip-flop shizhongchufaqiClose-packed structure miduijijiegouClose-loop gain bihuanzengyiCollector jidianjiCollision pengzhuangCompensated OP-AMP buchangyunfangCommon-base/collector/emitter connection gongjiji/jidianji/fashejilianjieCommon-gate/drain/source connection gongzha/lou/yuanlianjieCommon-mode gain gongmozengyiCommon-mode input gongmoshuruCommon-mode rejection ratio (CMRR) gongmoyizhibiCompatibility jianrongxingCompensation buchangCompensated impurities buchangzazhiCompensated semiconductor buchangbandaotiComplementary Darlington circuit hubudalindundianluComplementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)hubujinshuyanghuawubandaotichangxiaoyingjingtiguanComplementary error function yuwuchahanshuComputer-aided design (CAD)/test(CAT)/manufacture(CAM) jisuanjifuzhusheji/ ceshi /zhizaoCompound Semiconductor huahewubandaotiConductance diandaoConduction band (edge) daodai(di)Conduction level/state daodaitaiConductor daotiConductivity diandaolvConfiguration zutaiConlomb kulunConpled Configuration Devices jiegouzutaiConstants wulichangshuConstant energy surface dengnengmianConstant-source diffusionhengdingyuankuosanContact jiechuContamination zhiwuContinuity equation lianxuxingfangchengContact hole jiechukongContact potential jiechudianshiContinuity condition lianxuxingtiaojianContra doping fanchanzaControlled shoukongdeConverter zhuanhuanqiConveyer chuanshuqiCopper interconnection system tonghulianxitongCouping zuoheCovalent gongjiedeCrossover kuajiaoCritical linjiedeCrossunder chuanjiaoCruciblezuozuoCrystaldefect/face/orientation/lattice jingtiquexian/jingmian/jingxiang/jinggeCurrent density dianliumiduCurvature qulvCut off jiezhiCurrent drift/dirve/sharing dianliupiaoyi/qudong/gongxiangCurrent Sense dianliuquyangCurvature wanquCustom integrated circuit dingzhijichengdianluCylindrical zhumiandeCzochralshicrystal zhilidanjingCzochralski technique qiekelaosijijishu（CzfazhilajingtiJ）DDangling bonds xuanguajianDark current andianliuDead time kongzaishijianDebye length debaichangduDe.broglie debuluoyiDecderate jiansuDecibel (dB) fenbeiDecode yimaDeep acceptor level shenshouzhunengjiDeep donor level shenshizhunengjiDeep impurity level shenduzazhinengjiDeep trap shenxianzuoDefeat quexianDegenerate semiconductor jianbingbandaotiDegeneracy jianbingduDegradation tuihuaDegree Celsius(centigrade) /Kelvin sheshi/kaishiwenduDelay yanchi Density miduDensity of states taimiduDepletion haojinDepletion approximation haojinjinsiDepletion contact haojinjiechuDepletion depth haojinshenduDepletion effect haojinxiaoyingDepletion layer haojincengDepletion MOS haojinMOSDepletion region haojinquDeposited film dianjibaomoDeposition process dianjigongyiDesign rules shejiguizeDie xinpian（fushudice）Diode erjiguanDielectric jiediandeDielectric isolation jiezhigeliDifference-mode input chamoshuruDifferential amplifier chafenfangdaqiDifferential capacitance weifendianrongDiffused junction kuosanjieDiffusion kuosanDiffusion coefficient kuosanxishuDiffusion constant kuosanchangshuDiffusivity kuosanlvDiffusioncapacitance/barrier/current/furnace kuosandianrong/shilei/dianliu/luDigital circuit shuzidianluDipole domain oujichouDipole layer oujicengDirect-coupling zhijiezuoheDirect-gap semiconductor zhijiedaixibandaotiDirect transition zhijieyueqianDischarge fangdianDiscrete component fenliyuanjianDissipation haosanDistribution fenbuDistributed capacitance fenbudianrongDistributed model fenbumoxingDisplacement weiyiDislocation weicuoDomain chou Donor shizhuDonor exhaustion shizhuhaojinDopant chanzajiDoped semiconductor chanzabandaotiDoping concentration chanzanongduDouble-diffusive MOS(DMOS)shuangkuosanMOS.Drift piaoyiDrift field piaoyidianchangDrift mobility qianyilvDry etching ganfafushiDry/wet oxidation gan/shifayanghuaDose jiliangDuty cycle gongzuozhouqiDual-in-line package （DIP） shuangliezhichashifengzhuangDynamics dongtaiDynamic characteristics dongtaishuxingDynamic impedance dongtaizukangEEarly effect elixiaoyingEarly failure zaoqishixiaoEffective mass youxiaozhiliangEinstein relation(ship) aiyinsitanguanxiElectric Erase Programmable Read Only Memory(E2PROM) yicixingdiankebachuzhiducunchuqiElectrode dianjiElectrominggratim dianqianyiElectron affinity dianziqinheshiElectronic -grade dianzinengElectron-beam photo-resist exposure guangzhikangshijidedianzishupuguangElectron gas dianziqiElectron-grade water dianzijichunshuiElectron trapping center dianzifuhuozhongxinElectron Volt (eV) dianzifuElectrostatic jingdiandeElement yuansu/yuanjian/peijianElemental semiconductor yuansubandaotiEllipse tuoyuanEllipsoid tuoqiuEmitter fashejiEmitter-coupled logic fashejizuoheluojiEmitter-coupled pair fashejizuoheduiEmitter follower shesuiqiEmpty band kongdaiEmitter crowding effect fashejijibian（yongji）xiaoyingEndurance test =life test shoumingceshiEnergy state nengtaiEnergy momentum diagram nengliang-dongliang(E-K)tuEnhancement mode zengqiangxingmoshiEnhancement MOS zengqiangxingMOS Entefic (di)gongrongdeEnvironmental test huanjingceshiEpitaxial waiyandeEpitaxial layer waiyancengEpitaxial slice waiyanpianExpitaxy waiyanEquivalent curcuit dengxiaodianluEquilibrium majority /minority carriers pinghengduoshu/shaoshuzailiuziErasable Programmable ROM (EPROM)kechaqu（biancheng）cunchuqiError function complement yuwuchahanshuEtch keshiEtchant keshijiEtching mask kangshijiyanmoExcess carrier guoshengzailiuziExcitation energy jifanengExcited state jifataiExciton jiziExtrapolation waituifaExtrinsic feibenzhengdeExtrinsic semiconductor zazhibandaotiFFace - centered mianxinlifangFall time xiajiangshijianFan-in shanruFan-out shanchuFast recovery kuaihuifuFast surface states kuaijiemiantaiFeedback fankuiFermi level feiminengjiFermi-Dirac Distribution feimi-dilakefenbuFemi potential feimishiFick equation feikefangcheng（kuosan）Field effect transistor changxiaoyingjingtiguanField oxide changyanghuacengFilled band mandaiFilm baomoFlash memory shanshuocunchuqiFlat band pingdaiFlat pack bianpingfengzhuangFlicker noise shanshuo（bian）zaoshengFlip-flop toggle chufaqifanzhuanFloating gate fuzhaFluoride etch fuhuaqingkeshiForbidden band jindaiForward bias zhengxiangpianzhiForward blocking /conductingzhengxiangzuduan/daotongFrequency deviation noisepinlvpiaoyizaoshengFrequency response pinlvxiangyingFunction hanshuGGain zengyiGallium-Arsenide(GaAs) shenhuajiaGamy ray r shexianGate men、zha、kongzhijiGate oxide zhayanghuacengGauss（ian） gaosiGaussian distribution profile gaosichanzafenbuGeneration-recombination chansheng-fuheGeometries jihechicunGermanium(Ge) zheGraded huanbiandeGraded (gradual) channel huanbiangoudaoGraded junction huanbianjieGrain jingliGradient tiduGrown junction shengchangjieGuard ring baohuhuanGummel-Poom model gemou-pan moxingGunn - effect dishixiaoyingHHardened device fushejiaguqijianHeat of formation xingchengreHeat sink sanreqi、rechenHeavy/light hole band zhong/qing kongxuedaiHeavy saturation zhongchanzaHell - effect huoerxiaoyingHeterojunction yizhijieHeterojunction structure yizhijiejiegouHeterojunction Bipolar Transistor（HBT）yizhijieshuangjixingjingtiHigh field property gaochangtexingHigh-performance MOS.( H-MOS)gaoxingnengMOS. Hormalized guiyihuaHorizontal epitaxial reactor woshiwaiyanfanyingqiHot carrior rezailiuziHybrid integration hunhejichengIImage - force jingxiangliImpact ionization pengzhuangdianliImpedance zukangImperfect structure buwanzhengjiegouImplantation dose zhurujiliangImplanted ion zhuruliziImpurity zazhiImpurity scattering zazhisansheIncremental resistance dianzuzengliang（weifendianzu）In-contact mask jiechushiyanmoIndium tin oxide (ITO) zuoxiyanghuawuInduced channel ganyinggoudaoInfrared hongwaideInjection zhuruInput offset voltage shurushidiaodianyaInsulator jueyuantiInsulated Gate FET(IGFET)jueyuanzhaFETIntegrated injection logicjichengzhuruluojiIntegration jicheng、jifenInterconnection hulianInterconnection time delay hulianyanshiInterdigitated structure jiaohushijiegouInterface jiemianInterference gansheInternational system of unionsguojidanweizhiInternally scattering gujiansansheInterpolation neichafaIntrinsic benzhengdeIntrinsic semiconductor benzhengbandaotiInverse operation fanxianggongzuoInversion fanxingInverter daoxiangqiIon liziIon beam lizishuIon etching lizikeshiIon implantation lizizhuruIonization dianliIonization energy dianlinengIrradiation fuzhaoIsolation land gelidaoIsotropic gexiangtongxingJJunction FET(JFET) jiexingchangxiaoyingguanJunction isolation jiegeliJunction spacing jiejianjuJunction side-wall jiecebiLLatch up bisuoLateral hengxiangdeLattice jinggeLayout bantuLatticebinding/cell/constant/defect/distortion jinggejieheli/jingbao/jingge/jinggechangshu/jinggequexian/jinggejibianLeakage current （xie）loudianliuLevel shifting dianpingyidongLife time shouminglinearity xianxingduLinked bond gongjiajianLiquid Nitrogen yedanLiquid－phase epitaxial growth technique yexiangwaiyanshengchangjishuLithography guangkeLight Emitting Diode(LED) faguangerjiguanLoad line or Variable fuzaixianLocating and Wiring bujubuxianLongitudinal zongxiangdeLogic swing luojibaifuLorentz luolunziLumped model jizongmoxingMMajority carrier duoshuzailiuziMask yanmoban，guangkebanMask level yanmoxuhaoMask set yanmozuMass - action lawzhiliangshouhengdinglvMaster-slave D flip-flopzhucongDchufaqiMatching pipeiMaxwell maikesiweiMean free path pingjunziyouchengMeandered emitter junctionshuzhuangfashejijieMean time before failure (MTBF) pingjungongzuoshijianMegeto - resistance cizuMesa taimianMESFET-Metal SemiconductorjinshubandaotiFETMetallization jinshuhuaMicroelectronic technique weidianzijishuMicroelectronics weidianzixueMillen indices milezhishuMinority carrier shaoshuzailiuziMisfit shipeiMismatching shipeiMobile ions kedongliziMobility qianyilvModule mokuaiModulate diaozhiMolecular crystalfenzijingtiMonolithic IC danpianICMOSFETjinshuyanghuawubandaotichangxiaoyingjingtiguanMos. Transistor(MOST )MOS. jingtiguanMultiplication beizengModulator diaozhiMulti-chip IC duoxinpianICMulti-chip module(MCM) duoxinpianmokuaiMultiplication coefficientbeizengyinziNNaked chip weifengzhuangdexinpian（luopian）Negative feedback fufankuiNegative resistance fuzuNesting taokeNegative-temperature-coefficient fuwenduxishuNoise margin zaoshengrongxianNonequilibrium feipinghengNonrolatile feihuifa（yishi）xingNormally off/on changbi/kaiNumerical analysis shuzhifenxiOOccupied band mandaiOfficienay gonglvOffset pianyi、shidiaoOn standby daimingzhuangtaiOhmic contact oumujiechuOpen circuit kailuOperating point gongzuodianOperating bias gongzuopianzhiOperational amplifier (OPAMP)yunsuanfangdaqiOptical photon =photon guangziOptical quenchingguangzuomieOptical transition guangyueqianOptical-coupled isolatorguangzuohegeliqiOrganic semiconductoryoujibandaotiOrientation jingxiang、dingxiangOutline waixingOut-of-contact maskfeijiechushiyanmoOutput characteristic shuchutexingOutput voltage swing shuchudianyabaifuOvercompensation guobuchangOver-current protection guoliubaohuOver shoot guochongOver-voltage protection guoyabaohuOverlap jiaodieOverload guozaiOscillator zhendangqiOxide yanghuawuOxidation yanghuaOxide passivation yanghuacengdunhuaPPackage fengzhuangPad yahandianParameter canshuParasitic effect jishengxiaoyingParasitic oscillation jishengzhendangPassination dunhuaPassive component wuyuanyuanjianPassive device wuyuanqijianPassive surface dunhuajiemianParasitic transistor jishengjingtiguanPeak-point voltage fengdiandianyaPeak voltage fengzhidianyaPermanent-storage circuit yongjiucunchudianluPeriod zhouqiPeriodic table zhouqibiaoPermeable - base keshentoujiquPhase-lock loop suoxianghuanPhase drift xiangyiPhonon spectra shengzipuPhoto conduction guangdiandaoPhoto diode guangdianerjiguanPhotoelectric cell guangdianchiPhotoelectric effect guangdianxiaoyingPhotoenic devices guangziqijianPhotolithographic process guangkegongyi(photo) resist （guangmin）kangfushijiPin guanjiaoPinch off jiaduanPinning of Fermi level feiminengjidedingzha（xiaoying）Planar process pingmiangongyiPlanar transistor pingmianjingtiguanPlasma denglizitiPlezoelectric effect yadianxiaoyingPoisson equation bosongfangchengPoint contact dianjiechuPolarity jixingPolycrystal duojingPolymer semiconductorjuhewubandaotiPoly-silicon duojingguiPotential (dian)shiPotential barrier shileiPotential well shizuoPower dissipation gonghaoPower transistor gonglvjingtiguanPreamplifier qianzhifangdaqiPrimary flat zhupingmianPrincipal axes zhuzhouPrint-circuit board(PCB) yinzhidianlubanProbability jilvProbe tanzhenProcess gongyiPropagation delay chuanshuyanshiPseudopotential method zuoshifaPunch through chuantongPulse triggering/modulating maichongchufa/diaozhiPulse Widen Modulator(PWM) maichongkuandudiaozhiPunchthrough chuantongPush-pull stage tuiwanjiQQuality factor pinzhiyinziQuantization liangzihuaQuantum liangziQuantum efficiencyliangzixiaoyingQuantum mechanics liangzilixueQuasi – Fermi－levelzhunfeiminengjiQuartz shiyingRRadiation conductivity fushediandaolvRadiation damage fushesunshangRadiation flux density fushetongliangmiduRadiation hardening fushejiaguRadiation protection fushebaohuRadiative - recombinationfuzhaofuheRadioactive fangshexingReach through chuantongReactive sputtering source fanyingjiansheyuanRead diode lideerjiguanRecombination fuheRecovery diode huifuerjiguanReciprocal lattice daoheziRecovery time huifushijianRectifier zhengliuqi（guan）Rectifying contact zhengliujiechuReference jizhundian jizhun cankaodianRefractive index zheshelvRegister jicunqiRegistration duizhunRegulate kongzhi diaozhengRelaxation lifetime chiyushijianReliability kekaoxingResonance xiezhenResistance dianzuResistor dianzuqiResistivity dianzulvRegulator wenyaguan（qi）Relaxation chiyuResonant frequencygongshepinlvResponse time xiangyingshijianReverse fanxiangdeReverse bias fanxiangpianzhiSSampling circuit quyangdianluSapphire lanbaoshi（Al2O3）Satellite valley weixingguSaturated current rangedianliubaohequSaturation region baohequSaturation baohedeScaled down anbilisuoxiaoScattering sansheSchockley diode xiaokelaierjiguanSchottky xiaotejiSchottky barrier xiaotejishileiSchottky contact xiaotejijiechuSchrodingen xuedingeScribing grid huapiangeSecondary flat cipingmianSeed crystal zijingSegregation fenningSelectivity xuanzexingSelf aligned ziduizhundeSelf diffusion zikuosanSemiconductor bandaotiSemiconductor-controlled rectifier kekongguiSendsitivity lingminduSerial chuanxing/chuanlianSeries inductance chuanliandianganSettle time jianlishijianSheet resistance baocengdianzuShield pingbiShort circuit duanluShot noise sanlizaoshengShunt fenliuSidewall capacitancebianqiangdianrongSignal xinhaoSilica glass shiyingboliSilicon guiSilicon carbide tanhuaguiSilicon dioxide (SiO2) eryanghuaguiSilicon Nitride(Si3N4) danhuaguiSilicon On Insulator jueyuanguiSiliver whiskers yinxuSimple cubic jianlifangSingle crystal danjingSink chenSkin effect qufuxiaoyingSnap time jibianshijianSneak path qianxingtongluSulethreshold yazuodeSolar battery/cell taiyangnengdianchiSolid circuit gutidianluSolid Solubility gurongduSonband zidaiSource yuanjiSource follower yuansuiqiSpace charge kongjiandianheSpecific heat(PT) reSpeed-power product sudugonghaochengjiSpherical qiumiandeSpin zixuan Split fenlieSpontaneous emission zifafasheSpreading resistancekuozhandianzuSputter jiansheStacking fault cengcuoStatic characteristic jingtaitexingStimulated emission shoujifasheStimulated recombination shoujifuheStorage time cunchushijianStress yingliStraggle pianchaSublimation shenghuaSubstrate chendiSubstitutional tiweishideSuperlattice chaojinggeSupply dianyuanSurface biaomianSurge capacity langyongnengliSubscript xiabiaoSwitching time kaiguanshijianSwitch kaiguanTTailing kuozhanTerminal zhongduanTensor zhangliang Tensorial zhangliangdeThermal activation rejifaThermal conductivity redaolvThermal equilibrium repinghengThermal Oxidation reyanghuaThermal resistance rezuThermal sink rechenThermal velocity reyundongThermoelectricpovoer wenchadiandongshilvThick-film technique houmojishuThin-film hybrid ICbaomohunhejichengdianluThin-Film Transistor(TFT) baomojingtiThreshlod zuozhiThyistor jingzhaguanTransconductance kuadaoTransfer characteristic zhuanyitexingTransfer electron zhuanyidianziTransfer function chuanshuhanshuTransient shuntaideTransistor aging(stress) jingtiguanlaohuaTransit time duyueshijianTransition yueqianTransition-metal silica guodujinshuguihuawuTransition probability yueqianjilvTransition region guoduquTransport shuyun Transverse hengxiangdeTrap xianzuo Trapping fuhuoTrapped charge xianzuodianheTriangle generator sanjiaobofashengqiTriboelectricity mobadianTrigger chufaTrim diaopei diaozhengTriple diffusion sanzhongkuosanTruth table zhenzhibiaoTolerahce rongchaTunnel(ing) suidao（chuan）Tunnel current suidaodianliuTurn over zhuanzheTurn - off time guanduanshijianUUltraviolet ziwaideUnijunction danjiedeUnipolar danjideUnit cell yuan（yuan）baoUnity-gain frequency danweizengyipinlvUnilateral-switchdanxiangkaiguanVVacancy kongweiVacuum zhenkongValence(value) band jiadaiValue band edge jiadaidingValence bond jiajianVapour phase qixiangVaractor bianrongguanVaristor bianzuqiVibration zhendongVoltage dianyaWWafer jingpianWave equation bodongfangchengWave guide bodaoWave number boshuWave-particle duality bolierxiangxingWear-out shaohuiWire routing buxianWork function gonghanshuWorst-case device zuihuaiqingkuangqijianYYield chengpinlvZZener breakdown qinajichuanZone melting qurongfamianzeshengming：benwenxiwangluozhuanzai，banquanguiyuanzuozhesuoyou。gengduoganhuoneirongzhixuyaoniguanzhudianzixinbakeweixingongzhonghao！liaojiegengduo"ba，nibiezhemeshuo。nideshentishizuizhongyaode，woxiangjintiandainiquyiyuanzuogequanmianjiancha，haohaokankanbingqing。"woyuqijiandingdishuo。
没(惭别颈)有(驰辞耻)老(尝补辞)伴(叠补苍)儿(贰谤)的(顿别)，也(驰别)不(叠耻)要(驰补辞)再(窜补颈)找(窜丑补辞)了(尝颈补辞)。因(驰颈苍)为(奥别颈)老(尝补辞)了(尝颈补辞)，此(颁颈)时(厂丑颈)早(窜补辞)己(闯颈)过(骋耻辞)了(尝颈补辞)，为(奥别颈)爱(础颈)生(厂丑别苍驳)死(厂颈)相(齿颈补苍驳)许(齿耻)的(顿别)年(狈颈补苍)龄(尝颈苍驳)！
测补苍锄丑耻辞驳辞苍驳测耻补苍诲别产耻诲补辞辩颈补苍虫颈苍驳，锄丑补苍蝉丑颈辫补颈蝉丑补苍驳虫颈补苍驳虫颈诲颈箩颈别蝉丑补辞锄丑耻辞产补颈蹿耻辩耻补苍测耻诲补测耻苍丑别诲别测耻补苍测耻补苍。谤补苍驳尘别颈测颈飞别颈濒补颈诲补辞肠颈诲颈肠补苍驳耻补苍诲别测辞耻办别诲耻苍别苍驳辩颈苍驳虫颈诲颈濒颈补辞箩颈别诲补辞，锄丑别苍驳蝉丑颈产补颈蹿耻辩耻补苍诲别辩耻补苍蝉丑耻颈，飞别颈诲补测耻苍丑别锄丑耻谤耻濒颈补辞测耻补苍测耻补苍产耻诲耻补苍诲别蝉丑别苍驳尘颈苍驳濒颈，蝉丑颈诲别苍补苍蹿补苍驳诲别飞耻锄颈苍别苍驳驳辞耻蝉丑耻苍濒颈测耻苍诲颈箩颈苍驳肠丑别苍驳，肠耻箩颈苍濒颈补辞箩颈苍驳箩颈诲别蹿补苍谤辞苍驳丑别飞别苍丑耻补诲别箩颈补辞濒颈耻。6.锄丑补辞测颈肠丑耻虫颈蝉丑耻颈，锄耻辞锄补颈虫颈产颈补苍，测颈产颈补苍蹿补苍驳蝉辞苍驳测颈产颈补苍虫颈补辞蝉丑耻
雅(驰补)莎(厂丑补)在(窜补颈)印(驰颈苍)度(顿耻)时(厂丑颈)，也(驰别)知(窜丑颈)道(顿补辞)母(惭耻)亲(蚕颈苍)二(贰谤)婚(贬耻苍)的(顿别)困(碍耻苍)难(狈补苍)，因(驰颈苍)为(奥别颈)继(闯颈)父(贵耻)是(厂丑颈)一(驰颈)个(骋别)暴(叠补辞)躁(窜补辞)的(顿别)性(齿颈苍驳)子(窜颈)，所(厂耻辞)以(驰颈)动(顿辞苍驳)不(叠耻)动(顿辞苍驳)就(闯颈耻)会(贬耻颈)打(顿补)骂(惭补)她(罢补)。
真我GT6这次的定位是直屏党的性能梦想机，将首发京东方S1+旗舰直屏，拥有1.5K分辨率，四边框都极窄，搭配上直边整体效果非常出众。对于凌玲突然的怒火，佳清觉得有点莫名其妙，直接挂断了电话。乱伦秘史最新章节列表冲乱伦秘史全文免费阅读(谤补苍诲补濒濒...
作家毕飞宇在《青衣》中写过一个故事：