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又(You)一(Yi)次(Ci)操(Cao)作(Zuo)习(Xi)惯(Guan)的(De)大(Da)变(Bian)革(Ge)，iOS 11 Beta简(Jian)单(Dan)初(Chu)体(Ti)验(Yan)原(Yuan)创(Chuang)2017-06-09 14:38·什(Shi)么(Me)值(Zhi)得(De)买(Mai)本(Ben)内(Nei)容(Rong)来(Lai)源(Yuan)于(Yu)@什(Shi)么(Me)值(Zhi)得(De)买(Mai)SMZDM.COM｜网(Wang)友(You) lsxnano前(Qian)言(Yan)：苹(Ping)果(Guo)的(De)iOS都(Du)已(Yi)经(Jing)发(Fa)展(Zhan)到(Dao)第(Di)11个(Ge)大(Da)版(Ban)本(Ben)的(De)系(Xi)统(Tong)迭(Die)代(Dai)了(Liao)，可(Ke)以(Yi)说(Shuo)从(Cong)这(Zhe)一(Yi)代(Dai)开(Kai)始(Shi)意(Yi)味(Wei)着(Zhuo)又(You)是(Shi)一(Yi)次(Ci)操(Cao)作(Zuo)习(Xi)惯(Guan)的(De)变(Bian)迁(Qian)。从(Cong)iOS 6过(Guo)渡(Du)到(Dao)iOS 7，就(Jiu)是(Shi)拟(Ni)物(Wu)化(Hua)风(Feng)格(Ge)过(Guo)渡(Du)到(Dao)扁(Bian)平(Ping)化(Hua)风(Feng)格(Ge)，从(Cong)iOS 7一(Yi)直(Zhi)延(Yan)续(Xu)到(Dao)iOS 10的(De)操(Cao)作(Zuo)习(Xi)惯(Guan)却(Que)在(Zai)iOS 11又(You)再(Zai)一(Yi)次(Ci)发(Fa)生(Sheng)了(Liao)变(Bian)化(Hua)。按(An)照(Zhao)iPhone的(De)一(Yi)贯(Guan)传(Chuan)统(Tong)新(Xin)版(Ban)发(Fa)布(Bu)会(Hui)后(Hou)就(Jiu)会(Hui)淘(Tao)汰(Tai)一(Yi)批(Pi)旧(Jiu)的(De)机(Ji)型(Xing)，从(Cong)iOS 11就(Jiu)可(Ke)以(Yi)看(Kan)出(Chu)iPhone 5S之(Zhi)前(Qian)的(De)iPhone都(Du)已(Yi)经(Jing)被(Bei)放(Fang)弃(Qi)，iPad系(Xi)列(Lie)从(Cong)iPad 4代(Dai)之(Zhi)前(Qian)、iPad mini 2之(Zhi)前(Qian)的(De)机(Ji)型(Xing)也(Ye)是(Shi)被(Bei)放(Fang)弃(Qi)了(Liao)，而(Er)iPod Touch 6也(Ye)是(Shi)iPod系(Xi)列(Lie)中(Zhong)唯(Wei)一(Yi)的(De)独(Du)苗(Miao)了(Liao)。刷(Shua)机(Ji)理(Li)由(You)2017.6.6，一(Yi)大(Da)早(Zao)公(Gong)司(Si)就(Jiu)有(You)同(Tong)事(Shi)在(Zai)讨(Tao)论(Lun)着(Zhuo)凌(Ling)晨(Chen)的(De)苹(Ping)果(Guo)发(Fa)布(Bu)会(Hui)，作(Zuo)为(Wei)很(Hen)多(Duo)年(Nian)不(Bu)熬(Ao)夜(Ye)的(De)人(Ren)来(Lai)说(Shuo)已(Yi)经(Jing)没(Mei)那(Na)么(Me)多(Duo)的(De)关(Guan)注(Zhu)了(Liao)。既(Ji)然(Ran)同(Tong)事(Shi)说(Shuo)出(Chu)了(Liao)新(Xin)的(De)iOS系(Xi)统(Tong)，趁(Chen)着(Zhuo)还(Huan)不(Bu)是(Shi)正(Zheng)式(Shi)版(Ban)先(Xian)下(Xia)来(Lai)体(Ti)验(Yan)，要(Yao)是(Shi)体(Ti)验(Yan)不(Bu)佳(Jia)就(Jiu)用(Yong)iTunes刷(Shua)回(Hui)到(Dao)旧(Jiu)版(Ban)本(Ben)就(Jiu)好(Hao)啦(La)。鉴(Jian)于(Yu)iPhone是(Shi)主(Zhu)力(Li)机(Ji)不(Bu)敢(Gan)乱(Luan)刷(Shua)，很(Hen)多(Duo)照(Zhao)片(Pian)、短(Duan)信(Xin)都(Du)在(Zai)手(Shou)机(Ji)中(Zhong)；在(Zai)下(Xia)班(Ban)回(Hui)家(Jia)后(Hou)立(Li)马(Ma)拿(Na)出(Chu)来(Lai)iPad mini 2来(Lai)刷(Shua)机(Ji)体(Ti)验(Yan)一(Yi)下(Xia)。这(Zhe)个(Ge)是(Shi)iPad mini 2之(Zhi)前(Qian)的(De)系(Xi)统(Tong)版(Ban)本(Ben)：iOS 10.3.1，整(Zheng)体(Ti)都(Du)较(Jiao)为(Wei)流(Liu)畅(Chang)，只(Zhi)是(Shi)缺(Que)少(Shao)一(Yi)些(Xie)特(Te)性(Xing)功(Gong)能(Neng)，毕(Bi)竟(Jing)运(Yun)行(Xing)内(Nei)存(Cun)只(Zhi)有(You)1G也(Ye)是(Shi)情(Qing)有(You)可(Ke)原(Yuan)的(De)。会(Hui)发(Fa)现(Xian)总(Zong)的(De)容(Rong)量(Liang)在(Zai)升(Sheng)级(Ji)前(Qian)是(Shi)28.58G（iOS 10.3.1），升(Sheng)级(Ji)后(Hou)是(Shi)29.07G（iOS 11.0），说(Shuo)明(Ming)iOS 11降(Jiang)低(Di)了(Liao)系(Xi)统(Tong)的(De)占(Zhan)用(Yong)空(Kong)间(Jian)。系(Xi)统(Tong)展(Zhan)示(Shi)App Store界(Jie)面(Mian)有(You)着(Zhuo)很(Hen)明(Ming)显(Xian)的(De)区(Qu)别(Bie)，这(Zhe)个(Ge)要(Yao)亲(Qin)自(Zi)体(Ti)验(Yan)才(Cai)能(Neng)知(Zhi)道(Dao)变(Bian)化(Hua)的(De)差(Cha)异(Yi)。iOS 11升(Sheng)级(Ji)后(Hou)的(De)Dock，和(He)macOS的(De)Dock有(You)着(Zhuo)惊(Jing)人(Ren)的(De)相(Xiang)似(Si)性(Xing)；Dock分(Fen)为(Wei)两(Liang)个(Ge)部(Bu)分(Fen)：左(Zuo)侧(Ce)是(Shi)常(Chang)用(Yong)的(De)App可(Ke)以(Yi)拖(Tuo)到(Dao)下(Xia)面(Mian)的(De)Dock里(Li)（iPad mini 2中(Zhong)只(Zhi)能(Neng)最(Zui)多(Duo)放(Fang)入(Ru)11个(Ge)App），右(You)侧(Ce)则(Ze)是(Shi)运(Yun)行(Xing)App的(De)后(Hou)台(Tai)记(Ji)录(Lu)（只(Zhi)能(Neng)显(Xian)示(Shi)最(Zui)近(Jin)3个(Ge)运(Yun)行(Xing)过(Guo)的(De)App记(Ji)录(Lu)）File（文(Wen)件(Jian)）有(You)点(Dian)像(Xiang)是(Shi)文(Wen)件(Jian)管(Guan)理(Li)器(Qi)，却(Que)又(You)不(Bu)同(Tong)于(Yu)传(Chuan)统(Tong)意(Yi)义(Yi)上(Shang)的(De)文(Wen)件(Jian)管(Guan)理(Li)器(Qi)；不(Bu)能(Neng)直(Zhi)接(Jie)读(Du)取(Qu)iPad上(Shang)App中(Zhong)的(De)文(Wen)件(Jian)，所(Suo)以(Yi)这(Zhe)个(Ge)新(Xin)增(Zeng)加(Jia)的(De)App还(Huan)没(Mei)有(You)弄(Nong)明(Ming)白(Bai)到(Dao)底(Di)怎(Zen)么(Me)使(Shi)用(Yong)的(De)控(Kong)制(Zhi)中(Zhong)心(Xin)，主(Zhu)要(Yao)是(Shi)管(Guan)理(Li)控(Kong)制(Zhi)中(Zhong)心(Xin)的(De)App操(Cao)作(Zuo)的(De)，可(Ke)以(Yi)添(Tian)加(Jia)和(He)删(Shan)除(Chu)显(Xian)示(Shi)在(Zai)“控(Kong)制(Zhi)中(Zhong)心(Xin)”的(De)App控(Kong)制(Zhi)（简(Jian)单(Dan)说(Shuo)就(Jiu)是(Shi)有(You)点(Dian)像(Xiang)安(An)卓(Zhuo)手(Shou)机(Ji)中(Zhong)菜(Cai)单(Dan)栏(Lan)的(De)快(Kuai)捷(Jie)键(Jian)设(She)置(Zhi)）壁(Bi)纸(Zhi)一(Yi)如(Ru)既(Ji)往(Wang)的(De)还(Huan)是(Shi)没(Mei)有(You)太(Tai)大(Da)的(De)变(Bian)化(Hua)，均(Jun)为(Wei)iOS 11自(Zi)带(Dai)的(De)壁(Bi)纸(Zhi)多(Duo)了(Liao)一(Yi)个(Ge)App内(Nei)评(Ping)分(Fen)及(Ji)评(Ping)论(Lun)的(De)开(Kai)关(Guan)，也(Ye)就(Jiu)意(Yi)味(Wei)着(Zhuo)iOS 11告(Gao)别(Bie)了(Liao)烦(Fan)人(Ren)的(De)App弹(Dan)窗(Chuang)评(Ping)价(Jia)；还(Huan)有(You)一(Yi)个(Ge)新(Xin)增(Zeng)加(Jia)的(De)卸(Xie)载(Zai)未(Wei)使(Shi)用(Yong)的(De)应(Ying)用(Yong)，但(Dan)是(Shi)可(Ke)以(Yi)保(Bao)留(Liu)文(Wen)稿(Gao)和(He)数(Shu)据(Ju)iOS 11的(De)锁(Suo)屏(Ping)界(Jie)面(Mian)后(Hou)台(Tai)管(Guan)理(Li)界(Jie)面(Mian)不(Bu)再(Zai)是(Shi)上(Shang)划(Hua)退(Tui)出(Chu)了(Liao)，而(Er)是(Shi)变(Bian)成(Cheng)了(Liao)长(Chang)按(An)后(Hou)左(Zuo)上(Shang)角(Jiao)弹(Dan)出(Chu)×的(De)角(Jiao)标(Biao)清(Qing)理(Li)后(Hou)台(Tai)App长(Chang)按(An)会(Hui)弹(Dan)窗(Chuang)快(Kuai)捷(Jie)键(Jian)开(Kai)关(Guan)自(Zi)动(Dong)放(Fang)大(Da)，同(Tong)时(Shi)背(Bei)景(Jing)会(Hui)变(Bian)成(Cheng)模(Mo)糊(Hu)的(De)毛(Mao)玻(Bo)璃(Li)特(Te)效(Xiao)只(Zhi)可(Ke)以(Yi)在(Zai)控(Kong)制(Zhi)中(Zhong)心(Xin)改(Gai)变(Bian)快(Kuai)捷(Jie)键(Jian)的(De)顺(Shun)序(Xu)却(Que)不(Bu)能(Neng)自(Zi)定(Ding)义(Yi)使(Shi)用(Yong)感(Gan)受(Shou)整(Zheng)体(Ti)使(Shi)用(Yong)体(Ti)验(Yan)下(Xia)来(Lai)就(Jiu)是(Shi)卡(Ka)顿(Dun)的(De)很(Hen)明(Ming)显(Xian)，有(You)时(Shi)候(Hou)会(Hui)突(Tu)然(Ran)黑(Hei)屏(Ping)一(Yi)会(Hui)儿(Er)，有(You)时(Shi)候(Hou)会(Hui)存(Cun)在(Zai)死(Si)机(Ji)的(De)情(Qing)况(Kuang)必(Bi)须(Xu)强(Qiang)制(Zhi)重(Zhong)启(Qi)后(Hou)才(Cai)恢(Hui)复(Fu)正(Zheng)常(Chang)（不(Bu)排(Pai)除(Chu)是(Shi)iOS 11 Beta版(Ban)本(Ben)的(De)原(Yuan)因(Yin)），用(Yong)习(Xi)惯(Guan)了(Liao)的(De)一(Yi)些(Xie)操(Cao)作(Zuo)方(Fang)式(Shi)从(Cong)iOS 7、iOS 8、iOS 9、iOS 10后(Hou)却(Que)在(Zai)iOS 11改(Gai)变(Bian)了(Liao)。的(De)确(Que)iPad mini 2廉(Lian)颇(Po)老(Lao)矣(Yi)，对(Dui)新(Xin)系(Xi)统(Tong)的(De)流(Liu)畅(Chang)度(Du)而(Er)言(Yan)不(Bu)见(Jian)得(De)会(Hui)比(Bi)iOS 10更(Geng)好(Hao)；很(Hen)有(You)可(Ke)能(Neng)是(Shi)最(Zui)后(Hou)一(Yi)个(Ge)大(Da)版(Ban)本(Ben)的(De)迭(Die)代(Dai)更(Geng)新(Xin)了(Liao)。想(Xiang)了(Liao)解(Jie)更(Geng)多(Duo)相(Xiang)关(Guan)内(Nei)容(Rong)，点(Dian)击(Ji)下(Xia)方(Fang)“了(Liao)解(Jie)更(Geng)多(Duo)”，你(Ni)会(Hui)收(Shou)获(Huo)更(Geng)多(Duo)相(Xiang)关(Guan)优(You)质(Zhi)内(Nei)容(Rong)了(Liao)解(Jie)更(Geng)多(Duo)
ganjinshoucang，bandaotiyixieshuyudezhongyingwenduizhao2020-05-21 15:59·dianzixinbakechangyongbandaotizhongyingduizhaobiaolizizhuruji ion implanterLSSlilun Lindhand Scharff and Schiott theory，youcheng“linhande-sikafu-sigaotelilun”。goudaoxiaoying channeling effectshechengfenbu range distributionshendufenbu depth distributiontouyingshecheng projected rangezuzhijuli stopping distancezuzhibenling stopping powerbiaozhunzuzhijiemian standard stopping cross sectiontuihuo annealingjihuoneng activation energydengwentuihuo isothermal annealingjiguangtuihuo laser annealingyingliganshengquexian stress-induced defectzeyouquxiang preferred orientationzhibangongyi mask-making technologytuxingjibian pattern distortionchusuo first minificationjingsuo final minificationmuban master maskgeban chromium plateganban dry platerujiaoban emulsion platetoumingban see-through plategaofenbianlvban high resolution plate, HRPchaoweiliganban plate forultra-microminiaturizationyanmo maskyanmoduizhun mask alignmentduizhunjingdu alignment precisionguangkejiao photoresist，youcheng“guangzhikangshiji”。fuxingguangkejiao negative photoresistzhengxingguangkejiao positive photoresistwujiguangkejiao inorganic resistduocengguangkejiao multilevel resistdianzishuguangkejiao electron beam resistXshexianguangkejiao X-ray resistshuaxi scrubbingshuaijiao spinningtujiao photoresist coatinghouhong postbakingguangke photolithographyXshexianguangke X-ray lithographydianzishuguangke electron beam lithographylizishuguangke ion beam lithographyshenziwaiguangke deep-UV lithographyguangkeji mask alignertouyingguangkeji projection mask alignerpuguang exposurejiechushipuguangfa contact exposure methodjiejinshipuguangfa proximity exposure methodguangxuetouyingpuguangfa optical projection exposure methoddianzishupuguangxitong electron beam exposure systemfenbuzhongfuxitong step-and-repeat systemxianying developmentxiankuan linewidthqujiao stripping of photoresistyanghuaqujiao removing of photoresist by oxidationdenglizi［ti］qujiao removing of photoresist by plasmakeshi etchingganfakeshi dry etchingfanyinglizikeshi reactive ion etching, RIEgexiangtongxingkeshi isotropic etchinggexiangyixingkeshi anisotropic etchingfanyingjianshekeshi reactive sputter etchinglizixi ion beam milling，youcheng“lizimoxiao”。denglizi［ti］keshi plasma etchingzuanshi undercuttingbaolijishu lift-off technology，youcheng“futuogongyi”。zhongdianjiance endpoint monitoringjinshuhua metallizationhulian interconnectionduocengjinshuhua multilevel metallizationdianqianzuo electromigrationhuiliu reflowlinguiboli phosphorosilicate glasspenglinguiboli boron-phosphorosilicate glassdunhuagongyi passivation technologyduocengjiezhidunhua multilayer dielectric passivationhuapian scribingdianzishuqiepian electron beam slicingshaojie sinteringyinya indentationreyahan thermocompression bondingrechaoshenghan thermosonic bondinglenghan cold weldingdianhan spot weldingqiuhan ball bondingxiehan wedge bondingneiyinxianhanjie inner lead bondingwaiyinxianhanjie outer lead bondingliangshiyinxian beam leadzhuangjiagongyi mounting technologyfuzhuo adhesionfengzhuang packagingjinshufengzhuang metallic packagingtaocifengzhuang ceramic packagingbianpingfengzhuang flat packagingsufeng plastic packagebolifengzhuang glass packagingweifengzhuang micropackaging，youcheng“weizuzhuang”。guanke packageguanxin dieyinxianjianhe lead bondingyinxiankuangshijianhe lead frame bondingdaishizidongjianhe tape automated bonding, TABjiguangjianhe laser bondingchaoshengjianhe ultrasonic bondinghongwaijianhe infrared bondingweidianzicidiandajihe（anshouzimushunxupaixu）AAbrupt junction tubianjieAccelerated testing jiasushiyanAcceptor shouzhuAcceptor atom shouzhuyuanziAccumulation jilei、duijiAccumulating contact jileijiechuAccumulation region jileiquAccumulation layer jileicengActive region youyuanquActive component youyuanyuanActive device youyuanqijianActivation jihuoActivation energy jihuonengActive region youyuan（fangda）quAdmittance daonaAllowed band yundaiAlloy-junction devicehejinjieqijianAluminum(Aluminium) lvAluminum – oxide lvyanghuawuAluminum passivation lvdunhuaAmbipolar shuangjideAmbient temperature huanjingwenduAmorphous wudingxingde，feijingtideAmplifier gongfang kuoyinqi fangdaqiAnalogue(Analog) comparator monibijiaoqiAngstrom aiAnneal tuihuoAnisotropic gexiangyixingdeAnode yangjiArsenic (AS) shenAuger exieAuger process exieguochengAvalanche xuebengAvalanche breakdown xuebengjichuanAvalanche excitationxuebengjifaBBackground carrier bendizailiuziBackground doping bendichanzaBackward fanxiangBackward bias fanxiangpianzhiBallasting resistor zhengliudianzuBall bond qiuxingjianheBand nengdaiBand gap nengdaijianxiBarrier shileiBarrier layer shileicengBarrier width shileikuanduBase jijiBase contact jiqujiechuBase stretching jiqukuozhanxiaoyingBase transit time jiquduyueshijianBase transport efficiencyjiqushuyunxishuBase-width modulationjiqukuandudiaozhiBasis vector jishiBias pianzhiBilateral switch shuangxiangkaiguanBinary code erjinzhidaimaBinary compound semiconductor eryuanhuahewubandaotiBipolar shuangjixingdeBipolar Junction Transistor (BJT)shuangjijingtiguanBloch buluoheBlocking band zudangnengdaiBlocking contact zudangjiechuBody - centered tixinlifangBody-centred cubic structure tilixinjiegouBoltzmann boerzimanBond jian、jianheBonding electron jiadianziBonding pad jianhedianBootstrap circuit zijudianluBootstrapped emitter follower zijushejigensuiqiBoron pengBorosilicate glass pengguiboliBoundary condition bianjietiaojianBound electron shufudianziBreadboard moniban、shiyanbanBreak down jichuanBreak over zhuanzheBrillouin buliyuanBrillouin zone buliyuanquBuilt-in neijiandeBuild-in electric field neijiandianchangBulk ti/tineiBulk absorption tixishouBulk generation tichanshengBulk recombination tifuheBurn - in laohuaBurn out shaohuiBuried channel maigouBuried diffusion region yinmaikuosanquCCan waikeCapacitance dianrongCapture cross section fuhuojiemianCapture carrier fuhuozailiuziCarrier zailiuzi、zaiboCarry bit jinweiweiCarry-in bit jinweishuruCarry-out bit jinweishuchuCascade jilianCase guankeCathode yinjiCenter zhongxinCeramic taoci（de）Channel goudaoChannel breakdown goudaojichuanChannel current goudaodianliuChannel doping goudaochanzaChannel shortening goudaosuoduanChannel width goudaokuanduCharacteristic impedance tezhengzukangCharge dianhe、chongdianCharge-compensation effects dianhebuchangxiaoyingCharge conservation dianheshouhengCharge neutrality condition dianzhongxingtiaojianChargedrive/exchange/sharing/transfer/storage dianhequdong/jiaohuan/gongxiang/zhuanyi/cunchuChemmical etching huaxuefushifaChemically-Polish huaxuepaoguangChemmically-Mechanically Polish (CMP) huaxuejixiepaoguangChip xinpianChip yield xinpianchengpinlvClamped zuoweiClamping diode zuoweierjiguanCleavage plane jielimianClock rate shizhongpinlvClock generator shizhongfashengqiClock flip-flop shizhongchufaqiClose-packed structure miduijijiegouClose-loop gain bihuanzengyiCollector jidianjiCollision pengzhuangCompensated OP-AMP buchangyunfangCommon-base/collector/emitter connection gongjiji/jidianji/fashejilianjieCommon-gate/drain/source connection gongzha/lou/yuanlianjieCommon-mode gain gongmozengyiCommon-mode input gongmoshuruCommon-mode rejection ratio (CMRR) gongmoyizhibiCompatibility jianrongxingCompensation buchangCompensated impurities buchangzazhiCompensated semiconductor buchangbandaotiComplementary Darlington circuit hubudalindundianluComplementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS)hubujinshuyanghuawubandaotichangxiaoyingjingtiguanComplementary error function yuwuchahanshuComputer-aided design (CAD)/test(CAT)/manufacture(CAM) jisuanjifuzhusheji/ ceshi /zhizaoCompound Semiconductor huahewubandaotiConductance diandaoConduction band (edge) daodai(di)Conduction level/state daodaitaiConductor daotiConductivity diandaolvConfiguration zutaiConlomb kulunConpled Configuration Devices jiegouzutaiConstants wulichangshuConstant energy surface dengnengmianConstant-source diffusionhengdingyuankuosanContact jiechuContamination zhiwuContinuity equation lianxuxingfangchengContact hole jiechukongContact potential jiechudianshiContinuity condition lianxuxingtiaojianContra doping fanchanzaControlled shoukongdeConverter zhuanhuanqiConveyer chuanshuqiCopper interconnection system tonghulianxitongCouping zuoheCovalent gongjiedeCrossover kuajiaoCritical linjiedeCrossunder chuanjiaoCruciblezuozuoCrystaldefect/face/orientation/lattice jingtiquexian/jingmian/jingxiang/jinggeCurrent density dianliumiduCurvature qulvCut off jiezhiCurrent drift/dirve/sharing dianliupiaoyi/qudong/gongxiangCurrent Sense dianliuquyangCurvature wanquCustom integrated circuit dingzhijichengdianluCylindrical zhumiandeCzochralshicrystal zhilidanjingCzochralski technique qiekelaosijijishu（CzfazhilajingtiJ）DDangling bonds xuanguajianDark current andianliuDead time kongzaishijianDebye length debaichangduDe.broglie debuluoyiDecderate jiansuDecibel (dB) fenbeiDecode yimaDeep acceptor level shenshouzhunengjiDeep donor level shenshizhunengjiDeep impurity level shenduzazhinengjiDeep trap shenxianzuoDefeat quexianDegenerate semiconductor jianbingbandaotiDegeneracy jianbingduDegradation tuihuaDegree Celsius(centigrade) /Kelvin sheshi/kaishiwenduDelay yanchi Density miduDensity of states taimiduDepletion haojinDepletion approximation haojinjinsiDepletion contact haojinjiechuDepletion depth haojinshenduDepletion effect haojinxiaoyingDepletion layer haojincengDepletion MOS haojinMOSDepletion region haojinquDeposited film dianjibaomoDeposition process dianjigongyiDesign rules shejiguizeDie xinpian（fushudice）Diode erjiguanDielectric jiediandeDielectric isolation jiezhigeliDifference-mode input chamoshuruDifferential amplifier chafenfangdaqiDifferential capacitance weifendianrongDiffused junction kuosanjieDiffusion kuosanDiffusion coefficient kuosanxishuDiffusion constant kuosanchangshuDiffusivity kuosanlvDiffusioncapacitance/barrier/current/furnace kuosandianrong/shilei/dianliu/luDigital circuit shuzidianluDipole domain oujichouDipole layer oujicengDirect-coupling zhijiezuoheDirect-gap semiconductor zhijiedaixibandaotiDirect transition zhijieyueqianDischarge fangdianDiscrete component fenliyuanjianDissipation haosanDistribution fenbuDistributed capacitance fenbudianrongDistributed model fenbumoxingDisplacement weiyiDislocation weicuoDomain chou Donor shizhuDonor exhaustion shizhuhaojinDopant chanzajiDoped semiconductor chanzabandaotiDoping concentration chanzanongduDouble-diffusive MOS(DMOS)shuangkuosanMOS.Drift piaoyiDrift field piaoyidianchangDrift mobility qianyilvDry etching ganfafushiDry/wet oxidation gan/shifayanghuaDose jiliangDuty cycle gongzuozhouqiDual-in-line package （DIP） shuangliezhichashifengzhuangDynamics dongtaiDynamic characteristics dongtaishuxingDynamic impedance dongtaizukangEEarly effect elixiaoyingEarly failure zaoqishixiaoEffective mass youxiaozhiliangEinstein relation(ship) aiyinsitanguanxiElectric Erase Programmable Read Only Memory(E2PROM) yicixingdiankebachuzhiducunchuqiElectrode dianjiElectrominggratim dianqianyiElectron affinity dianziqinheshiElectronic -grade dianzinengElectron-beam photo-resist exposure guangzhikangshijidedianzishupuguangElectron gas dianziqiElectron-grade water dianzijichunshuiElectron trapping center dianzifuhuozhongxinElectron Volt (eV) dianzifuElectrostatic jingdiandeElement yuansu/yuanjian/peijianElemental semiconductor yuansubandaotiEllipse tuoyuanEllipsoid tuoqiuEmitter fashejiEmitter-coupled logic fashejizuoheluojiEmitter-coupled pair fashejizuoheduiEmitter follower shesuiqiEmpty band kongdaiEmitter crowding effect fashejijibian（yongji）xiaoyingEndurance test =life test shoumingceshiEnergy state nengtaiEnergy momentum diagram nengliang-dongliang(E-K)tuEnhancement mode zengqiangxingmoshiEnhancement MOS zengqiangxingMOS Entefic (di)gongrongdeEnvironmental test huanjingceshiEpitaxial waiyandeEpitaxial layer waiyancengEpitaxial slice waiyanpianExpitaxy waiyanEquivalent curcuit dengxiaodianluEquilibrium majority /minority carriers pinghengduoshu/shaoshuzailiuziErasable Programmable ROM (EPROM)kechaqu（biancheng）cunchuqiError function complement yuwuchahanshuEtch keshiEtchant keshijiEtching mask kangshijiyanmoExcess carrier guoshengzailiuziExcitation energy jifanengExcited state jifataiExciton jiziExtrapolation waituifaExtrinsic feibenzhengdeExtrinsic semiconductor zazhibandaotiFFace - centered mianxinlifangFall time xiajiangshijianFan-in shanruFan-out shanchuFast recovery kuaihuifuFast surface states kuaijiemiantaiFeedback fankuiFermi level feiminengjiFermi-Dirac Distribution feimi-dilakefenbuFemi potential feimishiFick equation feikefangcheng（kuosan）Field effect transistor changxiaoyingjingtiguanField oxide changyanghuacengFilled band mandaiFilm baomoFlash memory shanshuocunchuqiFlat band pingdaiFlat pack bianpingfengzhuangFlicker noise shanshuo（bian）zaoshengFlip-flop toggle chufaqifanzhuanFloating gate fuzhaFluoride etch fuhuaqingkeshiForbidden band jindaiForward bias zhengxiangpianzhiForward blocking /conductingzhengxiangzuduan/daotongFrequency deviation noisepinlvpiaoyizaoshengFrequency response pinlvxiangyingFunction hanshuGGain zengyiGallium-Arsenide(GaAs) shenhuajiaGamy ray r shexianGate men、zha、kongzhijiGate oxide zhayanghuacengGauss（ian） gaosiGaussian distribution profile gaosichanzafenbuGeneration-recombination chansheng-fuheGeometries jihechicunGermanium(Ge) zheGraded huanbiandeGraded (gradual) channel huanbiangoudaoGraded junction huanbianjieGrain jingliGradient tiduGrown junction shengchangjieGuard ring baohuhuanGummel-Poom model gemou-pan moxingGunn - effect dishixiaoyingHHardened device fushejiaguqijianHeat of formation xingchengreHeat sink sanreqi、rechenHeavy/light hole band zhong/qing kongxuedaiHeavy saturation zhongchanzaHell - effect huoerxiaoyingHeterojunction yizhijieHeterojunction structure yizhijiejiegouHeterojunction Bipolar Transistor（HBT）yizhijieshuangjixingjingtiHigh field property gaochangtexingHigh-performance MOS.( H-MOS)gaoxingnengMOS. Hormalized guiyihuaHorizontal epitaxial reactor woshiwaiyanfanyingqiHot carrior rezailiuziHybrid integration hunhejichengIImage - force jingxiangliImpact ionization pengzhuangdianliImpedance zukangImperfect structure buwanzhengjiegouImplantation dose zhurujiliangImplanted ion zhuruliziImpurity zazhiImpurity scattering zazhisansheIncremental resistance dianzuzengliang（weifendianzu）In-contact mask jiechushiyanmoIndium tin oxide (ITO) zuoxiyanghuawuInduced channel ganyinggoudaoInfrared hongwaideInjection zhuruInput offset voltage shurushidiaodianyaInsulator jueyuantiInsulated Gate FET(IGFET)jueyuanzhaFETIntegrated injection logicjichengzhuruluojiIntegration jicheng、jifenInterconnection hulianInterconnection time delay hulianyanshiInterdigitated structure jiaohushijiegouInterface jiemianInterference gansheInternational system of unionsguojidanweizhiInternally scattering gujiansansheInterpolation neichafaIntrinsic benzhengdeIntrinsic semiconductor benzhengbandaotiInverse operation fanxianggongzuoInversion fanxingInverter daoxiangqiIon liziIon beam lizishuIon etching lizikeshiIon implantation lizizhuruIonization dianliIonization energy dianlinengIrradiation fuzhaoIsolation land gelidaoIsotropic gexiangtongxingJJunction FET(JFET) jiexingchangxiaoyingguanJunction isolation jiegeliJunction spacing jiejianjuJunction side-wall jiecebiLLatch up bisuoLateral hengxiangdeLattice jinggeLayout bantuLatticebinding/cell/constant/defect/distortion jinggejieheli/jingbao/jingge/jinggechangshu/jinggequexian/jinggejibianLeakage current （xie）loudianliuLevel shifting dianpingyidongLife time shouminglinearity xianxingduLinked bond gongjiajianLiquid Nitrogen yedanLiquid－phase epitaxial growth technique yexiangwaiyanshengchangjishuLithography guangkeLight Emitting Diode(LED) faguangerjiguanLoad line or Variable fuzaixianLocating and Wiring bujubuxianLongitudinal zongxiangdeLogic swing luojibaifuLorentz luolunziLumped model jizongmoxingMMajority carrier duoshuzailiuziMask yanmoban，guangkebanMask level yanmoxuhaoMask set yanmozuMass - action lawzhiliangshouhengdinglvMaster-slave D flip-flopzhucongDchufaqiMatching pipeiMaxwell maikesiweiMean free path pingjunziyouchengMeandered emitter junctionshuzhuangfashejijieMean time before failure (MTBF) pingjungongzuoshijianMegeto - resistance cizuMesa taimianMESFET-Metal SemiconductorjinshubandaotiFETMetallization jinshuhuaMicroelectronic technique weidianzijishuMicroelectronics weidianzixueMillen indices milezhishuMinority carrier shaoshuzailiuziMisfit shipeiMismatching shipeiMobile ions kedongliziMobility qianyilvModule mokuaiModulate diaozhiMolecular crystalfenzijingtiMonolithic IC danpianICMOSFETjinshuyanghuawubandaotichangxiaoyingjingtiguanMos. Transistor(MOST )MOS. jingtiguanMultiplication beizengModulator diaozhiMulti-chip IC duoxinpianICMulti-chip module(MCM) duoxinpianmokuaiMultiplication coefficientbeizengyinziNNaked chip weifengzhuangdexinpian（luopian）Negative feedback fufankuiNegative resistance fuzuNesting taokeNegative-temperature-coefficient fuwenduxishuNoise margin zaoshengrongxianNonequilibrium feipinghengNonrolatile feihuifa（yishi）xingNormally off/on changbi/kaiNumerical analysis shuzhifenxiOOccupied band mandaiOfficienay gonglvOffset pianyi、shidiaoOn standby daimingzhuangtaiOhmic contact oumujiechuOpen circuit kailuOperating point gongzuodianOperating bias gongzuopianzhiOperational amplifier (OPAMP)yunsuanfangdaqiOptical photon =photon guangziOptical quenchingguangzuomieOptical transition guangyueqianOptical-coupled isolatorguangzuohegeliqiOrganic semiconductoryoujibandaotiOrientation jingxiang、dingxiangOutline waixingOut-of-contact maskfeijiechushiyanmoOutput characteristic shuchutexingOutput voltage swing shuchudianyabaifuOvercompensation guobuchangOver-current protection guoliubaohuOver shoot guochongOver-voltage protection guoyabaohuOverlap jiaodieOverload guozaiOscillator zhendangqiOxide yanghuawuOxidation yanghuaOxide passivation yanghuacengdunhuaPPackage fengzhuangPad yahandianParameter canshuParasitic effect jishengxiaoyingParasitic oscillation jishengzhendangPassination dunhuaPassive component wuyuanyuanjianPassive device wuyuanqijianPassive surface dunhuajiemianParasitic transistor jishengjingtiguanPeak-point voltage fengdiandianyaPeak voltage fengzhidianyaPermanent-storage circuit yongjiucunchudianluPeriod zhouqiPeriodic table zhouqibiaoPermeable - base keshentoujiquPhase-lock loop suoxianghuanPhase drift xiangyiPhonon spectra shengzipuPhoto conduction guangdiandaoPhoto diode guangdianerjiguanPhotoelectric cell guangdianchiPhotoelectric effect guangdianxiaoyingPhotoenic devices guangziqijianPhotolithographic process guangkegongyi(photo) resist （guangmin）kangfushijiPin guanjiaoPinch off jiaduanPinning of Fermi level feiminengjidedingzha（xiaoying）Planar process pingmiangongyiPlanar transistor pingmianjingtiguanPlasma denglizitiPlezoelectric effect yadianxiaoyingPoisson equation bosongfangchengPoint contact dianjiechuPolarity jixingPolycrystal duojingPolymer semiconductorjuhewubandaotiPoly-silicon duojingguiPotential (dian)shiPotential barrier shileiPotential well shizuoPower dissipation gonghaoPower transistor gonglvjingtiguanPreamplifier qianzhifangdaqiPrimary flat zhupingmianPrincipal axes zhuzhouPrint-circuit board(PCB) yinzhidianlubanProbability jilvProbe tanzhenProcess gongyiPropagation delay chuanshuyanshiPseudopotential method zuoshifaPunch through chuantongPulse triggering/modulating maichongchufa/diaozhiPulse Widen Modulator(PWM) maichongkuandudiaozhiPunchthrough chuantongPush-pull stage tuiwanjiQQuality factor pinzhiyinziQuantization liangzihuaQuantum liangziQuantum efficiencyliangzixiaoyingQuantum mechanics liangzilixueQuasi – Fermi－levelzhunfeiminengjiQuartz shiyingRRadiation conductivity fushediandaolvRadiation damage fushesunshangRadiation flux density fushetongliangmiduRadiation hardening fushejiaguRadiation protection fushebaohuRadiative - recombinationfuzhaofuheRadioactive fangshexingReach through chuantongReactive sputtering source fanyingjiansheyuanRead diode lideerjiguanRecombination fuheRecovery diode huifuerjiguanReciprocal lattice daoheziRecovery time huifushijianRectifier zhengliuqi（guan）Rectifying contact zhengliujiechuReference jizhundian jizhun cankaodianRefractive index zheshelvRegister jicunqiRegistration duizhunRegulate kongzhi diaozhengRelaxation lifetime chiyushijianReliability kekaoxingResonance xiezhenResistance dianzuResistor dianzuqiResistivity dianzulvRegulator wenyaguan（qi）Relaxation chiyuResonant frequencygongshepinlvResponse time xiangyingshijianReverse fanxiangdeReverse bias fanxiangpianzhiSSampling circuit quyangdianluSapphire lanbaoshi（Al2O3）Satellite valley weixingguSaturated current rangedianliubaohequSaturation region baohequSaturation baohedeScaled down anbilisuoxiaoScattering sansheSchockley diode xiaokelaierjiguanSchottky xiaotejiSchottky barrier xiaotejishileiSchottky contact xiaotejijiechuSchrodingen xuedingeScribing grid huapiangeSecondary flat cipingmianSeed crystal zijingSegregation fenningSelectivity xuanzexingSelf aligned ziduizhundeSelf diffusion zikuosanSemiconductor bandaotiSemiconductor-controlled rectifier kekongguiSendsitivity lingminduSerial chuanxing/chuanlianSeries inductance chuanliandianganSettle time jianlishijianSheet resistance baocengdianzuShield pingbiShort circuit duanluShot noise sanlizaoshengShunt fenliuSidewall capacitancebianqiangdianrongSignal xinhaoSilica glass shiyingboliSilicon guiSilicon carbide tanhuaguiSilicon dioxide (SiO2) eryanghuaguiSilicon Nitride(Si3N4) danhuaguiSilicon On Insulator jueyuanguiSiliver whiskers yinxuSimple cubic jianlifangSingle crystal danjingSink chenSkin effect qufuxiaoyingSnap time jibianshijianSneak path qianxingtongluSulethreshold yazuodeSolar battery/cell taiyangnengdianchiSolid circuit gutidianluSolid Solubility gurongduSonband zidaiSource yuanjiSource follower yuansuiqiSpace charge kongjiandianheSpecific heat(PT) reSpeed-power product sudugonghaochengjiSpherical qiumiandeSpin zixuan Split fenlieSpontaneous emission zifafasheSpreading resistancekuozhandianzuSputter jiansheStacking fault cengcuoStatic characteristic jingtaitexingStimulated emission shoujifasheStimulated recombination shoujifuheStorage time cunchushijianStress yingliStraggle pianchaSublimation shenghuaSubstrate chendiSubstitutional tiweishideSuperlattice chaojinggeSupply dianyuanSurface biaomianSurge capacity langyongnengliSubscript xiabiaoSwitching time kaiguanshijianSwitch kaiguanTTailing kuozhanTerminal zhongduanTensor zhangliang Tensorial zhangliangdeThermal activation rejifaThermal conductivity redaolvThermal equilibrium repinghengThermal Oxidation reyanghuaThermal resistance rezuThermal sink rechenThermal velocity reyundongThermoelectricpovoer wenchadiandongshilvThick-film technique houmojishuThin-film hybrid ICbaomohunhejichengdianluThin-Film Transistor(TFT) baomojingtiThreshlod zuozhiThyistor jingzhaguanTransconductance kuadaoTransfer characteristic zhuanyitexingTransfer electron zhuanyidianziTransfer function chuanshuhanshuTransient shuntaideTransistor aging(stress) jingtiguanlaohuaTransit time duyueshijianTransition yueqianTransition-metal silica guodujinshuguihuawuTransition probability yueqianjilvTransition region guoduquTransport shuyun Transverse hengxiangdeTrap xianzuo Trapping fuhuoTrapped charge xianzuodianheTriangle generator sanjiaobofashengqiTriboelectricity mobadianTrigger chufaTrim diaopei diaozhengTriple diffusion sanzhongkuosanTruth table zhenzhibiaoTolerahce rongchaTunnel(ing) suidao（chuan）Tunnel current suidaodianliuTurn over zhuanzheTurn - off time guanduanshijianUUltraviolet ziwaideUnijunction danjiedeUnipolar danjideUnit cell yuan（yuan）baoUnity-gain frequency danweizengyipinlvUnilateral-switchdanxiangkaiguanVVacancy kongweiVacuum zhenkongValence(value) band jiadaiValue band edge jiadaidingValence bond jiajianVapour phase qixiangVaractor bianrongguanVaristor bianzuqiVibration zhendongVoltage dianyaWWafer jingpianWave equation bodongfangchengWave guide bodaoWave number boshuWave-particle duality bolierxiangxingWear-out shaohuiWire routing buxianWork function gonghanshuWorst-case device zuihuaiqingkuangqijianYYield chengpinlvZZener breakdown qinajichuanZone melting qurongfamianzeshengming：benwenxiwangluozhuanzai，banquanguiyuanzuozhesuoyou。gengduoganhuoneirongzhixuyaoniguanzhudianzixinbakeweixingongzhonghao！liaojiegengduo2024-07-07 07:44·zhiboba
它(罢补)也(驰别)不(叠耻)只(窜丑颈)是(厂丑颈)丹(顿补苍)丹(顿补苍)一(驰颈)层(颁别苍驳)豆(顿辞耻)皮(笔颈)那(狈补)么(惭别)简(闯颈补苍)单(顿补苍)，叁(厂补苍)鲜(齿颈补苍)豆(顿辞耻)皮(笔颈)是(厂丑颈)由(驰辞耻)糯(狈耻辞)米(惭颈)和(贬别)豆(顿辞耻)皮(笔颈)合(贬别)作(窜耻辞)而(贰谤)成(颁丑别苍驳)，以(驰颈)馅(齿颈补苍)中(窜丑辞苍驳)有(驰辞耻)鲜(齿颈补苍)肉(搁辞耻)肉(搁辞耻)、鲜(齿颈补苍)蛋(顿补苍)、香(齿颈补苍驳)菇(骋耻)，冬(顿辞苍驳)笋(厂耻苍)，在(窜补颈)油(驰辞耻)滋(窜颈)滋(窜颈)的(顿别)热(搁别)炕(碍补苍驳)锅(骋耻辞)上(厂丑补苍驳)“煎(闯颈补苍)制(窜丑颈)”而(贰谤)成(颁丑别苍驳)。
非公认会计准则净利润为1413.79亿元，与2022年财年的1363.88亿元相比增长4%。新家装修都要设计衣柜，可怎么做才更美观好用呢？适合晚上看产站直播的补辫辫推荐-适合晚上看产站直播的补辫辫...
新能源二手车市场潜力待发掘面临多重挑战原创2024-01-06 21:25·文心雕龙随着新能源技术的迅速发展新能源新车市场渗透率已达到40%然而与其形成鲜明对比的是新能源二手车销量虽然呈上升趋势但在2023年10月份最高销量中新能源二手车仅占总销量的不足5%这一数据揭示了一个尚待开发的市场空间也引发了行业内外对新能源二手车市场的深度思考一些有远见的二手车商已经看到了其中的商机准备全力投入但更多的市场参与者则持谨慎态度认为市场疲软背后隐藏着更深层次的结构性问题首先新能源二手车的质量问题成为市场发展的瓶颈目前新能源车最核心的三电系统缺乏有效的鉴定体系这不仅给二手车商的估价带来了困难也使得消费者在购买时心存疑虑为了打破这一僵局行业协会、保险机构和厂家需要联手制定针对新能源车三电系统的鉴定规范其次新能源二手车的权益问题同样不容忽视即使是官方二手车车主的用车权益也会大打折扣例如蔚来等品牌的官方二手车不再提供首任车主的免费换电和终身质保服务这无疑增加了消费者的养护成本此外由于新能源车后市场服务尚处于起步阶段且技术垄断现象严重消费者在维修时往往面临选择原厂高昂维修费的困境第三信任危机是制约新能源二手车市场发展的另一个重要因素随着市场竞争的加剧一些新能源车企陷入困境甚至倒闭这使得消费者和二手车商在购买和使用相关车辆时心存疑虑品牌消失后的车辆如何续保、如何养护等问题成为市场参与者的隐忧综上所述新能源二手车市场虽然展现出巨大的潜力但目前仍处于混沌期对于是否应该冒险投入这一领域各方意见不一一些人认为市场的波动可能带来丰厚的回报而另一些人则认为在当前环境下押注风险过高对于这一复杂的市场现象您又如何看待呢