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偶像的意义是什么李宇春告诉了我答案原创2020-08-23 18:09·时尚芭莎‘偶像’一词在当下的时代环境里经过渲染很容易被误读成一个贬义词它总是和速成、脆弱联系在一起但偶像的初始意义本非如此它是充满能量的会自发光经得起打磨最近第十届全国青联委员李宇春作为代表参与了全国青联第十三届全国委员会的主题直播直播中她谈及偶像价值表示她鼓励大家勇敢地去追逐自己心中的爱与梦想这是偶像应该带来的正能量和应该引领的正确价值不得不说作为正能量偶像春春从出道以来在用作品回馈给粉丝的同时也一直身体力行坚持做公益不断用实际行动影响着无数青年人记得2005年的那个夏天一场《超级女声》的全民狂欢让21岁的李宇春成为了全民偶像转眼间李宇春的偶像之路已走过15年这15年间网络文化兴起娱乐潮流风靡一些改变悄然发生却翻天覆地在时代潮流的裹挟之下有人迷茫有人迷失可回首那个一夜成名的她却始终活跃在人们的视野中甚至成为了更优秀的青年榜样对粉丝们而言李宇春是偶像、正能量、精神信仰；对大众而言李宇春是一个时代的特殊符号她用自己的行动定义了一个真正的优质偶像该是什么样子——一个始终在寻求成为更好自己的人从最初开始尝试创作音乐到现在李宇春歌曲中越来越饱含着对社会的责任感最初的她或许习惯把自己包裹起来有一个坚硬的外壳而如今的她面对社会责任时已经不想做一个沉默者不断坚持用音乐输出的方式带给我们鼓励和慰藉死于二十五岁的少年/终于在七十五岁那年下葬（《年轻气盛》）这句特别的歌词事实上来源于Benjamin Franklin的名言：Some people die at 25 and aren't buried until 75太分明的棱角会被磨平太多有趣的灵魂先于肉体死去无数人如行尸走肉般活着这无非就是当下这个时代的真实写照而她告诉我们：不要只徒留一副皮囊尽管有太多无奈我们也要努力追寻自己的初心保持着那份倔强与桀骜因为年轻气盛所以温顺尚早我家乡偏南/闯北的眼泪偏咸/你始终扬起的笑脸/吹散我所有阴天（《口音》）她以家乡口音为出发点简单的歌词诉说离乡闯荡人们的小心思将北漂写出了新的感悟触动着无数漂泊在外的人的心滤镜的色温/完美不热不冷/看戏的坐稳/我要打开流行之门/存在感加一/什么鬼都蠢蠢欲动/玩摇滚的迷恋娱乐新闻/C位以待又是一轮好戏纷呈（《流行》）字里行间写的是人们在数字时代对碎片信息的过度消费社会新闻、娱乐八卦和网络暴力都变成统一而简单的情感宣泄Somebody's watching me/when there's no way to hide（《Privacy》）她唱出了当下隐私无处可藏的困惑以及对于信息浪潮的反思：我们所生活的这个世界是由无所不在的监视器所控制的世界我们究竟是更安全还是更危险这个世界/究竟怎么了/左手忏悔/右手杀戮（《焰火》）她关注这个世界每一寸土地上发生的动荡和战争心碎于在恐怖袭击中受伤的孩子对世界局势的思考与自问震撼而感动从《哇》到《人间乐园》其实并不仅仅是专辑的第一首歌到第十首歌它其实将生与死一路过来甚至又重新开始的变化尽数包括《哇》代表着新生而《人间乐园》则代表着由人组成的人群、人类和世界这是一个从简单到复杂的过程也是她通过十首作品想要完成对生与死、来与去的循环思考献给所有女孩的《给女孩》：请相信自己是很美好的存在/不用怀疑这是宇宙独一无二的色彩/愿你被这个世界温柔以待......歌曲用阳光温暖的曲调唱出了女性在人生中不同的、独一无二的美保持初心勇敢健康独立观照生命像春风般明媚的歌声鼓励着更多女性坚持自我活出自己的人生希望她们不要被世界的恶意吞噬而永远站在世界的明亮之处被爱抚慰着温暖且有力量的《岁岁平安》让许多人听过之后都湿了眼眶我住长江头/君住长江尾/同根同源/共饮一江水......她将三镇的黄鹤楼、长江水、热干面温柔吟唱像一个好友在耳畔倾诉鼓励每个人以自己的方式走下去委婉温情柔韧而刚强一曲《面朝大海春暖花开》用温暖的歌声来迎接春天距离李宇春上一首唱给春天的歌已经过去了一年春天虽然如约到了但是世界却已经不一样了一年前她唱着你是爱是暖是希望一年后她唱从明天起做个幸福的人她将这首诗唱成一首歌用以铭记那些久盼花开的日子和那些深埋凛冬的遗憾并用这首歌去迎接久别重逢的喜悦和永不缺席的春天风靡全网的《无价之姐》再次以女性视角展开一个女性成长要历经多少风暴/做自己才不是一句简单的口号/什么口红/什么包包/我自己挑/什么人生/什么梦想/我自己造/保护好那一抹最真实自在的笑/我是我自己的无价之宝......戏谑态度的歌词、保持独有的锋芒在重重质疑里乘风破浪展现出独立自信的女性；超洗脑的复古旋律搭建自己的世界在层层音浪里乘风破浪突显出女性的自我价值我们看到在不同的音乐中李宇春诉说着自己的表达、传达着自己的价值观也在用音乐的力量去温暖这个世界就像李宇春曾经说过：如果我有更多的能量通过我自己的小小的影响力可以传递给一些人我认为这是有价值的事情出道至今李宇春也一直身体力行走在慈善的第一线在2014年全球掀起关注渐冻症患者并接力冰桶挑战的浪潮之后被接力挑战点名的李宇春并没有和寻常公众人物一样录制视频而是在仔细了解这一罕见病后默默捐赠了10台ALS渐冻症患者需要的视控仪2018年李宇春出席活动本来大家都以为这只是为好友的新广告宣传但没想到的是春春又低调地关心和支持着公益活动——将此次合作的全部酬劳都捐献给珍·古道尔黑猩猩保护研究基金会连续三年接受世界自然基金会（WWF）授牌担任推广大使的李宇春一直积极投身于WWF展开的各类公益活动中从积极宣传地球熄灯一小时到拒绝非法野生物贸易、对象牙制品说不再到带领自己的团队拒绝一次性用品拥抱环保可持续的生活方式等等每一个对促进地球生态环境改善而做出的承诺身为推广大使的春春除了倡导也一直身体力行去履行......外冷内热的她总是习惯了先行动、后表达不仅如此在她身上我们也看到什么样的偶像就会有什么样的粉丝她的粉丝玉米们也在尽己所能地变得更好2006年在李宇春出道的第二年玉米爱心基金就在李宇春的支持和玉米们的建议下成立了这是我国首个由歌迷捐设和命名的专项基金这14年来玉米爱心基金累计捐助爱心善款超2000万元资助领域先后涉及贫困大病患儿救助、边远地区博爱卫生院（站）和学校援建、贫困听障儿童康复训练、重大公共事件的赈济物资发放和灾后重建以及贫困地区乡村儿童美学启蒙教育等累计受益人口超10万人<< 滑动查看下一张图片 >>一个粉丝群体在与自己的偶像一起做更多有意义的事帮助更多的人带领着无数人传递爱、分享爱和守护爱也把感受到的更好、更大的世界分享给大家对于很多人而言最闪耀的不只是她得到的种种奖项和纪录而是她存在的本身积极、努力对每件事都充满热情的李宇春更像是一束光她是精神寄托也是激励自己前行的榜样其实在这个偶像定义越发模糊的当下、在这个人气流量就要躺平任嘲的现在似乎很多人都间歇性地遗忘了偶像存在的初始意义一位敬业、职业、专业的偶像带给粉丝的绝不只是单纯舔屏那么肤浅更重要的是他影响着我们、激励着我们支撑起我们内心的一方天地点燃我们内心的小宇宙让我们有奋斗的目标和力量所谓偶像是粉丝心里的向往也是粉丝的同行者或许多年后心中的那个名字可能都已经淡去但你却依然记得自己是被怎样的光芒吸引——真诚、努力、执着、坚持、勇敢、不怕苦、善良……它们成了你未来很多年里做事的准则是你为自己挑选的准则你看偶像的意义就在于给你一束光然后你会循着这束光去打磨自己编辑：曼玲
就是在一次次的讲座过程中；团市委爱心暑托班项目负责人周薇表示，今年浦东和闵行的办班点增加的相对比较多，“尤其是浦东，需求有所增加，办班点基本上比去年增加了一倍”。
蹿耻飞补苍辩颈补苍诲别苍补测颈办别，飞辞肠丑别苍驳谤别苍飞辞谤别苍蝉丑补濒颈补辞，测别锄丑辞苍驳测耻濒颈箩颈别濒颈补辞苍补箩耻：锄丑别苍蝉耻补苍补，蝉丑颈办补苍濒颈补辞箩颈补驳别，测辞耻辩耻别谤别苍濒颈补辞丑补辞箩颈箩颈补诲耻蝉丑颈锄丑别测补苍驳，肠补颈蝉丑耻辞辩颈诲别。产耻产耻箩颈别箩颈苍驳，肠丑颈诲耻蝉丑别办耻辞诲别测耻补苍濒耻辞办辞苍驳箩颈补苍，办别测颈测补苍驳丑耻补锄丑辞苍驳肠补颈，辫颈苍肠丑补锄耻辞辩颈，测别办别测颈蝉丑颈丑补颈锄颈尘别苍诲别“尘颈尘颈箩颈诲颈”，测耻补苍锄颈锄耻驳辞耻诲补，锄丑耻补苍驳诲别虫颈补尘别颈测颈飞别颈箩颈补谤别苍诲耻颈尘别颈丑补辞蝉丑别苍驳丑耻辞诲别虫颈补苍驳飞补苍驳。
杨(驰补苍驳)玉(驰耻)环(贬耻补苍)死(厂颈)后(贬辞耻)，兵(叠颈苍驳)变(叠颈补苍)也(驰别)随(厂耻颈)之(窜丑颈)平(笔颈苍驳)定(顿颈苍驳)，李(尝颈)瑁(窜耻辞)受(厂丑辞耻)命(惭颈苍驳)安(础苍)抚(贵耻)将(闯颈补苍驳)士(厂丑颈)们(惭别苍)，不(叠耻)知(窜丑颈)道(顿补辞)他(罢补)是(厂丑颈)抱(叠补辞)着(窜丑耻辞)什(厂丑颈)么(惭别)样(驰补苍驳)的(顿别)心(齿颈苍)情(蚕颈苍驳)去(蚕耻)处(颁丑耻)理(尝颈)这(窜丑别)场(颁丑补苍驳)烂(尝补苍)摊(罢补苍)子(窜颈)的(顿别)呢(狈别)？
测补辞诲颈飞别苍锄丑补苍驳诲别苍补虫颈别蝉丑颈1987苍颈补苍，诲颈补苍测颈苍驳《别谤锄颈办补颈诲颈补苍》诲别办补颈辫补颈，谤补苍驳濒颈补苍驳迟颈补苍办补颈辩颈濒颈补辞锄颈箩颈诲别虫颈苍谤别苍蝉丑别苍驳。
收(Shou)藏(Cang)｜半(Ban)导(Dao)体(Ti)一(Yi)些(Xie)术(Shu)语(Yu)的(De)中(Zhong)英(Ying)文(Wen)对(Dui)照(Zhao)2018-12-03 04:20·芯(Xin)榜(Bang)芯(Xin) 片(Pian) 圈(Quan)芯(Xin)片(Pian)半(Ban)导(Dao)体(Ti)人(Ren)的(De)圈(Quan)子(Zi)！100000+关(Guan)注(Zhu)精(Jing)彩(Cai)推(Tui)荐(Jian)来(Lai)源(Yuan)：ittbank常(Chang)用(Yong)半(Ban)导(Dao)体(Ti)中(Zhong)英(Ying)对(Dui)照(Zhao)表(Biao)常(Chang)用(Yong)的(De)离(Li)子(Zi)注(Zhu)入(Ru)机(Ji)：ion implanterLSS理(Li)论(Lun)：Lindhand Scharff and Schiott theory，又(You)称(Cheng)“林(Lin)汉(Han)德(De)-斯(Si)卡(Ka)夫(Fu)-斯(Si)高(Gao)特(Te)理(Li)论(Lun)”。沟(Gou)道(Dao)效(Xiao)应(Ying)：channeling effect射(She)程(Cheng)分(Fen)布(Bu)：range distribution深(Shen)度(Du)分(Fen)布(Bu)：depth distribution投(Tou)影(Ying)射(She)程(Cheng)：projected range阻(Zu)止(Zhi)距(Ju)离(Li)：stopping distance阻(Zu)止(Zhi)本(Ben)领(Ling)：stopping power标(Biao)准(Zhun)阻(Zu)止(Zhi)截(Jie)面(Mian)：standard stopping cross section退(Tui)火(Huo)：annealing激(Ji)活(Huo)能(Neng)：activation energy等(Deng)温(Wen)退(Tui)火(Huo)：isothermal annealing激(Ji)光(Guang)退(Tui)火(Huo)：laser annealing应(Ying)力(Li)感(Gan)生(Sheng)缺(Que)陷(Xian)：stress-induced defect择(Ze)优(You)取(Qu)向(Xiang)：preferred orientation制(Zhi)版(Ban)工(Gong)艺(Yi)：mask-making technology图(Tu)形(Xing)畸(Ji)变(Bian)：pattern distortion初(Chu)缩(Suo)：first minification精(Jing)缩(Suo)：final minification母(Mu)版(Ban)：master mask铬(Ge)版(Ban)：chromium plate干(Gan)版(Ban)：dry plate乳(Ru)胶(Jiao)版(Ban)：emulsion plate透(Tou)明(Ming)版(Ban)：see-through plate高(Gao)分(Fen)辨(Bian)率(Lv)版(Ban)：high resolution plate, HRP超(Chao)微(Wei)粒(Li)干(Gan)版(Ban)：plate forultra-microminiaturization掩(Yan)模(Mo)：mask掩(Yan)模(Mo)对(Dui)准(Zhun)：mask alignment对(Dui)准(Zhun)精(Jing)度(Du)：alignment precision光(Guang)刻(Ke)胶(Jiao)：photoresist，又(You)称(Cheng)“光(Guang)致(Zhi)抗(Kang)蚀(Shi)剂(Ji)”。负(Fu)性(Xing)光(Guang)刻(Ke)胶(Jiao)：negative photoresist正(Zheng)性(Xing)光(Guang)刻(Ke)胶(Jiao)：positive photoresist无(Wu)机(Ji)光(Guang)刻(Ke)胶(Jiao)：inorganic resist多(Duo)层(Ceng)光(Guang)刻(Ke)胶(Jiao)：multilevel resist电(Dian)子(Zi)束(Shu)光(Guang)刻(Ke)胶(Jiao)：electron beam resistX射(She)线(Xian)光(Guang)刻(Ke)胶(Jiao)：X-ray resist刷(Shua)洗(Xi)：scrubbing甩(Shuai)胶(Jiao)：spinning涂(Tu)胶(Jiao)：photoresist coating后(Hou)烘(Hong)：postbaking光(Guang)刻(Ke)：photolithographyX射(She)线(Xian)光(Guang)刻(Ke)：X-ray lithography电(Dian)子(Zi)束(Shu)光(Guang)刻(Ke)：electron beam lithography离(Li)子(Zi)束(Shu)光(Guang)刻(Ke)：ion beam lithography深(Shen)紫(Zi)外(Wai)光(Guang)刻(Ke)：deep-UV lithography光(Guang)刻(Ke)机(Ji)：mask aligner投(Tou)影(Ying)光(Guang)刻(Ke)机(Ji)：projection mask aligner曝(Pu)光(Guang)：exposure接(Jie)触(Chu)式(Shi)曝(Pu)光(Guang)法(Fa)：contact exposure method接(Jie)近(Jin)式(Shi)曝(Pu)光(Guang)法(Fa)：proximity exposure method光(Guang)学(Xue)投(Tou)影(Ying)曝(Pu)光(Guang)法(Fa)：optical projection exposure method电(Dian)子(Zi)束(Shu)曝(Pu)光(Guang)系(Xi)统(Tong)：electron beam exposure system分(Fen)步(Bu)重(Zhong)复(Fu)系(Xi)统(Tong)：step-and-repeat system显(Xian)影(Ying)：development线(Xian)宽(Kuan)：linewidth去(Qu)胶(Jiao)：stripping of photoresist氧(Yang)化(Hua)去(Qu)胶(Jiao)：removing of photoresist by oxidation等(Deng)离(Li)子(Zi)［体(Ti)］去(Qu)胶(Jiao)：removing of photoresist by plasma刻(Ke)蚀(Shi)：etching干(Gan)法(Fa)刻(Ke)蚀(Shi)：dry etching反(Fan)应(Ying)离(Li)子(Zi)刻(Ke)蚀(Shi)：reactive ion etching,：RIE各(Ge)向(Xiang)同(Tong)性(Xing)刻(Ke)蚀(Shi)：isotropic etching各(Ge)向(Xiang)异(Yi)性(Xing)刻(Ke)蚀(Shi)：anisotropic etching反(Fan)应(Ying)溅(Jian)射(She)刻(Ke)蚀(Shi)：reactive sputter etching离(Li)子(Zi)铣(Xi)：ion beam milling，又(You)称(Cheng)“离(Li)子(Zi)磨(Mo)削(Xiao)”。等(Deng)离(Li)子(Zi)［体(Ti)］刻(Ke)蚀(Shi)：plasma etching钻(Zuan)蚀(Shi)：undercutting剥(Bao)离(Li)技(Ji)术(Shu)：lift-off technology，又(You)称(Cheng)“浮(Fu)脱(Tuo)工(Gong)艺(Yi)”。终(Zhong)点(Dian)监(Jian)测(Ce)：endpoint monitoring金(Jin)属(Shu)化(Hua)：metallization互(Hu)连(Lian)：interconnection多(Duo)层(Ceng)金(Jin)属(Shu)化(Hua)：multilevel metallization电(Dian)迁(Qian)徙(Zuo)：electromigration回(Hui)流(Liu)：reflow磷(Lin)硅(Gui)玻(Bo)璃(Li)：phosphorosilicate glass硼(Peng)磷(Lin)硅(Gui)玻(Bo)璃(Li)：boron-phosphorosilicate glass钝(Dun)化(Hua)工(Gong)艺(Yi)：passivation technology多(Duo)层(Ceng)介(Jie)质(Zhi)钝(Dun)化(Hua)：multilayer dielectric passivation划(Hua)片(Pian)：scribing电(Dian)子(Zi)束(Shu)切(Qie)片(Pian)：electron beam slicing烧(Shao)结(Jie)：sintering印(Yin)压(Ya)：indentation热(Re)压(Ya)焊(Han)：thermocompression bonding热(Re)超(Chao)声(Sheng)焊(Han)：thermosonic bonding冷(Leng)焊(Han)：cold welding点(Dian)焊(Han)：spot welding球(Qiu)焊(Han)：ball bonding楔(Xie)焊(Han)：wedge bonding内(Nei)引(Yin)线(Xian)焊(Han)接(Jie)：inner lead bonding外(Wai)引(Yin)线(Xian)焊(Han)接(Jie)：outer lead bonding梁(Liang)式(Shi)引(Yin)线(Xian)：beam lead装(Zhuang)架(Jia)工(Gong)艺(Yi)：mounting technology附(Fu)着(Zhuo)：adhesion封(Feng)装(Zhuang)：packaging金(Jin)属(Shu)封(Feng)装(Zhuang)：metallic packaging陶(Tao)瓷(Ci)封(Feng)装(Zhuang)：ceramic packaging扁(Bian)平(Ping)封(Feng)装(Zhuang)：flat packaging塑(Su)封(Feng)：plastic package玻(Bo)璃(Li)封(Feng)装(Zhuang)：glass packaging微(Wei)封(Feng)装(Zhuang)：micropackaging，又(You)称(Cheng)“微(Wei)组(Zu)装(Zhuang)”。管(Guan)壳(Ke)：package管(Guan)芯(Xin)：die引(Yin)线(Xian)键(Jian)合(He)：lead bonding引(Yin)线(Xian)框(Kuang)式(Shi)键(Jian)合(He)：lead frame bonding带(Dai)式(Shi)自(Zi)动(Dong)键(Jian)合(He)：tape automated bonding, TAB激(Ji)光(Guang)键(Jian)合(He)：laser bonding超(Chao)声(Sheng)键(Jian)合(He)：ultrasonic bonding红(Hong)外(Wai)键(Jian)合(He)：infrared bonding微(Wei)电(Dian)子(Zi)辞(Ci)典(Dian)大(Da)集(Ji)合(He)（按(An)首(Shou)字(Zi)母(Mu)顺(Shun)序(Xu)排(Pai)序(Xu)）AAbrupt junction 突(Tu)变(Bian)结(Jie)Accelerated testing 加(Jia)速(Su)实(Shi)验(Yan)Acceptor 受(Shou)主(Zhu)Acceptor atom 受(Shou)主(Zhu)原(Yuan)子(Zi)Accumulation 积(Ji)累(Lei)、堆(Dui)积(Ji)Accumulating contact 积(Ji)累(Lei)接(Jie)触(Chu)Accumulation region 积(Ji)累(Lei)区(Qu)Accumulation layer 积(Ji)累(Lei)层(Ceng)Active region 有(You)源(Yuan)区(Qu)Active component 有(You)源(Yuan)元(Yuan)Active device 有(You)源(Yuan)器(Qi)件(Jian)Activation 激(Ji)活(Huo)Activation energy 激(Ji)活(Huo)能(Neng)Active region 有(You)源(Yuan)（放(Fang)大(Da)）区(Qu)Admittance 导(Dao)纳(Na)Allowed band 允(Yun)带(Dai)Alloy-junction device合(He)金(Jin)结(Jie)器(Qi)件(Jian) Aluminum(Aluminium) 铝(Lv)Aluminum – oxide 铝(Lv)氧(Yang)化(Hua)物(Wu)Aluminum passivation 铝(Lv)钝(Dun)化(Hua)Ambipolar 双(Shuang)极(Ji)的(De)Ambient temperature 环(Huan)境(Jing)温(Wen)度(Du)Amorphous 无(Wu)定(Ding)形(Xing)的(De)，非(Fei)晶(Jing)体(Ti)的(De)Amplifier 功(Gong)放(Fang) 扩(Kuo)音(Yin)器(Qi) 放(Fang)大(Da)器(Qi)Analogue(Analog) comparator 模(Mo)拟(Ni)比(Bi)较(Jiao)器(Qi) Angstrom 埃(Ai)Anneal 退(Tui)火(Huo)Anisotropic 各(Ge)向(Xiang)异(Yi)性(Xing)的(De)Anode 阳(Yang)极(Ji)Arsenic (AS) 砷(Shen)Auger 俄(E)歇(Xie)Auger process 俄(E)歇(Xie)过(Guo)程(Cheng)Avalanche 雪(Xue)崩(Beng)Avalanche breakdown 雪(Xue)崩(Beng)击(Ji)穿(Chuan)Avalanche excitation雪(Xue)崩(Beng)激(Ji)发(Fa)BBackground carrier 本(Ben)底(Di)载(Zai)流(Liu)子(Zi)Background doping 本(Ben)底(Di)掺(Chan)杂(Za)Backward 反(Fan)向(Xiang)Backward bias 反(Fan)向(Xiang)偏(Pian)置(Zhi)Ballasting resistor 整(Zheng)流(Liu)电(Dian)阻(Zu)Ball bond 球(Qiu)形(Xing)键(Jian)合(He)Band gap 能(Neng)带(Dai)间(Jian)隙(Xi)Barrier 势(Shi)垒(Lei)Barrier layer 势(Shi)垒(Lei)层(Ceng)Barrier width 势(Shi)垒(Lei)宽(Kuan)度(Du)Base 基(Ji)极(Ji)Base contact 基(Ji)区(Qu)接(Jie)触(Chu)Base stretching 基(Ji)区(Qu)扩(Kuo)展(Zhan)效(Xiao)应(Ying)Base transit time 基(Ji)区(Qu)渡(Du)越(Yue)时(Shi)间(Jian)Base transport efficiency基(Ji)区(Qu)输(Shu)运(Yun)系(Xi)数(Shu)Base-width modulation基(Ji)区(Qu)宽(Kuan)度(Du)调(Diao)制(Zhi)Basis vector 基(Ji)矢(Shi)Bias 偏(Pian)置(Zhi)Bilateral switch 双(Shuang)向(Xiang)开(Kai)关(Guan)Binary code 二(Er)进(Jin)制(Zhi)代(Dai)码(Ma)Binary compound semiconductor 二(Er)元(Yuan)化(Hua)合(He)物(Wu)半(Ban)导(Dao)体(Ti)Bipolar 双(Shuang)极(Ji)性(Xing)的(De)Bipolar Junction Transistor (BJT)双(Shuang)极(Ji)晶(Jing)体(Ti)管(Guan)Bloch 布(Bu)洛(Luo)赫(He)Blocking band 阻(Zu)挡(Dang)能(Neng)带(Dai)Blocking contact 阻(Zu)挡(Dang)接(Jie)触(Chu)Body - centered 体(Ti)心(Xin)立(Li)方(Fang)Body-centred cubic structure 体(Ti)立(Li)心(Xin)结(Jie)构(Gou)Boltzmann 波(Bo)尔(Er)兹(Zi)曼(Man)Bond 键(Jian)、键(Jian)合(He)Bonding electron 价(Jia)电(Dian)子(Zi)Bonding pad 键(Jian)合(He)点(Dian)Bootstrap circuit 自(Zi)举(Ju)电(Dian)路(Lu)Bootstrapped emitter follower 自(Zi)举(Ju)射(She)极(Ji)跟(Gen)随(Sui)器(Qi)Boron 硼(Peng)Borosilicate glass 硼(Peng)硅(Gui)玻(Bo)璃(Li)Boundary condition 边(Bian)界(Jie)条(Tiao)件(Jian)Bound electron 束(Shu)缚(Fu)电(Dian)子(Zi)Breadboard 模(Mo)拟(Ni)板(Ban)、实(Shi)验(Yan)板(Ban)Break down 击(Ji)穿(Chuan)Break over 转(Zhuan)折(Zhe)Brillouin 布(Bu)里(Li)渊(Yuan)Brillouin zone 布(Bu)里(Li)渊(Yuan)区(Qu)Built-in 内(Nei)建(Jian)的(De)Build-in electric field 内(Nei)建(Jian)电(Dian)场(Chang)Bulk 体(Ti)/体(Ti)内(Nei) Bulk absorption 体(Ti)吸(Xi)收(Shou)Bulk generation 体(Ti)产(Chan)生(Sheng)Bulk recombination 体(Ti)复(Fu)合(He)Burn - in 老(Lao)化(Hua)Burn out 烧(Shao)毁(Hui)Buried channel 埋(Mai)沟(Gou)Buried diffusion region 隐(Yin)埋(Mai)扩(Kuo)散(San)区(Qu)CCan 外(Wai)壳(Ke)Capacitance 电(Dian)容(Rong)Capture cross section 俘(Fu)获(Huo)截(Jie)面(Mian)Capture carrier 俘(Fu)获(Huo)载(Zai)流(Liu)子(Zi)Carrier 载(Zai)流(Liu)子(Zi)、载(Zai)波(Bo)Carry bit 进(Jin)位(Wei)位(Wei)Carry-in bit 进(Jin)位(Wei)输(Shu)入(Ru)Carry-out bit 进(Jin)位(Wei)输(Shu)出(Chu)Cascade 级(Ji)联(Lian)Case 管(Guan)壳(Ke)Cathode 阴(Yin)极(Ji)Center 中(Zhong)心(Xin)Ceramic 陶(Tao)瓷(Ci)（的(De)）Channel 沟(Gou)道(Dao)Channel breakdown 沟(Gou)道(Dao)击(Ji)穿(Chuan)Channel current 沟(Gou)道(Dao)电(Dian)流(Liu)Channel doping 沟(Gou)道(Dao)掺(Chan)杂(Za)Channel shortening 沟(Gou)道(Dao)缩(Suo)短(Duan)Channel width 沟(Gou)道(Dao)宽(Kuan)度(Du)Characteristic impedance 特(Te)征(Zheng)阻(Zu)抗(Kang)Charge 电(Dian)荷(He)、充(Chong)电(Dian)Charge-compensation effects 电(Dian)荷(He)补(Bu)偿(Chang)效(Xiao)应(Ying)Charge conservation 电(Dian)荷(He)守(Shou)恒(Heng)Charge neutrality condition 电(Dian)中(Zhong)性(Xing)条(Tiao)件(Jian)Chargedrive/exchange/sharing/transfer/storage 电(Dian)荷(He)驱(Qu)动(Dong)/交(Jiao)换(Huan)/共(Gong)享(Xiang)/转(Zhuan)移(Yi)/存(Cun)储(Chu)Chemmical etching 化(Hua)学(Xue)腐(Fu)蚀(Shi)法(Fa)Chemically-Polish 化(Hua)学(Xue)抛(Pao)光(Guang)Chemmically-Mechanically Polish (CMP) 化(Hua)学(Xue)机(Ji)械(Xie)抛(Pao)光(Guang) Chip 芯(Xin)片(Pian)Chip yield 芯(Xin)片(Pian)成(Cheng)品(Pin)率(Lv)Clamped 箝(Zuo)位(Wei)Clamping diode 箝(Zuo)位(Wei)二(Er)极(Ji)管(Guan)Cleavage plane 解(Jie)理(Li)面(Mian)Clock rate 时(Shi)钟(Zhong)频(Pin)率(Lv)Clock generator 时(Shi)钟(Zhong)发(Fa)生(Sheng)器(Qi)Clock flip-flop 时(Shi)钟(Zhong)触(Chu)发(Fa)器(Qi)Close-packed structure 密(Mi)堆(Dui)积(Ji)结(Jie)构(Gou)Close-loop gain 闭(Bi)环(Huan)增(Zeng)益(Yi)Collector 集(Ji)电(Dian)极(Ji)Collision 碰(Peng)撞(Zhuang)Compensated OP-AMP 补(Bu)偿(Chang)运(Yun)放(Fang)Common-base/collector/emitter connection 共(Gong)基(Ji)极(Ji)/集(Ji)电(Dian)极(Ji)/发(Fa)射(She)极(Ji)连(Lian)接(Jie)Common-gate/drain/source connection 共(Gong)栅(Zha)/漏(Lou)/源(Yuan)连(Lian)接(Jie)Common-mode gain 共(Gong)模(Mo)增(Zeng)益(Yi)Common-mode input 共(Gong)模(Mo)输(Shu)入(Ru)Common-mode rejection ratio (CMRR) 共(Gong)模(Mo)抑(Yi)制(Zhi)比(Bi)Compatibility 兼(Jian)容(Rong)性(Xing)Compensation 补(Bu)偿(Chang)Compensated impurities 补(Bu)偿(Chang)杂(Za)质(Zhi)Compensated semiconductor 补(Bu)偿(Chang)半(Ban)导(Dao)体(Ti)Complementary Darlington circuit 互(Hu)补(Bu)达(Da)林(Lin)顿(Dun)电(Dian)路(Lu)Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS) 互(Hu)补(Bu)金(Jin)属(Shu)氧(Yang)化(Hua)物(Wu)半(Ban)导(Dao)体(Ti)场(Chang)效(Xiao)应(Ying)晶(Jing)体(Ti)管(Guan)Complementary error function 余(Yu)误(Wu)差(Cha)函(Han)数(Shu)Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 计(Ji)算(Suan)机(Ji)辅(Fu)助(Zhu)设(She)计(Ji)/ 测(Ce)试(Shi) /制(Zhi) 造(Zao)Compound Semiconductor 化(Hua)合(He)物(Wu)半(Ban)导(Dao)体(Ti)Conductance 电(Dian)导(Dao)Conduction band (edge) 导(Dao)带(Dai)(底(Di))Conduction level/state 导(Dao)带(Dai)态(Tai)Conductor 导(Dao)体(Ti)Conductivity 电(Dian)导(Dao)率(Lv)Configuration 组(Zu)态(Tai)Conlomb 库(Ku)仑(Lun)Conpled Configuration Devices 结(Jie)构(Gou)组(Zu)态(Tai)Constants 物(Wu)理(Li)常(Chang)数(Shu)Constant energy surface 等(Deng)能(Neng)面(Mian)Constant-source diffusion恒(Heng)定(Ding)源(Yuan)扩(Kuo)散(San)Contact 接(Jie)触(Chu)Contamination 治(Zhi)污(Wu)Continuity equation 连(Lian)续(Xu)性(Xing)方(Fang)程(Cheng)Contact hole 接(Jie)触(Chu)孔(Kong)Contact potential 接(Jie)触(Chu)电(Dian)势(Shi)Continuity condition 连(Lian)续(Xu)性(Xing)条(Tiao)件(Jian)Contra doping 反(Fan)掺(Chan)杂(Za)Controlled 受(Shou)控(Kong)的(De)Converter 转(Zhuan)换(Huan)器(Qi)Conveyer 传(Chuan)输(Shu)器(Qi)Copper interconnection system 铜(Tong)互(Hu)连(Lian)系(Xi)统(Tong)Couping 耦(Zuo)合(He)Covalent 共(Gong)阶(Jie)的(De)Crossover 跨(Kua)交(Jiao)Critical 临(Lin)界(Jie)的(De)Crossunder 穿(Chuan)交(Jiao)Crucible坩(Zuo)埚(Zuo)Crystaldefect/face/orientation/lattice 晶(Jing)体(Ti)缺(Que)陷(Xian)/晶(Jing)面(Mian)/晶(Jing)向(Xiang)/晶(Jing)格(Ge)Current density 电(Dian)流(Liu)密(Mi)度(Du)Curvature 曲(Qu)率(Lv)Cut off 截(Jie)止(Zhi)Current drift/dirve/sharing 电(Dian)流(Liu)漂(Piao)移(Yi)/驱(Qu)动(Dong)/共(Gong)享(Xiang)Current Sense 电(Dian)流(Liu)取(Qu)样(Yang)Curvature 弯(Wan)曲(Qu)Custom integrated circuit 定(Ding)制(Zhi)集(Ji)成(Cheng)电(Dian)路(Lu)Cylindrical 柱(Zhu)面(Mian)的(De)Czochralshicrystal 直(Zhi)立(Li)单(Dan)晶(Jing)Czochralski technique 切(Qie)克(Ke)劳(Lao)斯(Si)基(Ji)技(Ji)术(Shu)（Cz法(Fa)直(Zhi)拉(La)晶(Jing)体(Ti)J）DDangling bonds 悬(Xuan)挂(Gua)键(Jian)Dark current 暗(An)电(Dian)流(Liu)Dead time 空(Kong)载(Zai)时(Shi)间(Jian)Debye length 德(De)拜(Bai)长(Chang)度(Du)De.broglie 德(De)布(Bu)洛(Luo)意(Yi)Decderate 减(Jian)速(Su)Decibel (dB) 分(Fen)贝(Bei)Decode 译(Yi)码(Ma)Deep acceptor level 深(Shen)受(Shou)主(Zhu)能(Neng)级(Ji)Deep donor level 深(Shen)施(Shi)主(Zhu)能(Neng)级(Ji)Deep impurity level 深(Shen)度(Du)杂(Za)质(Zhi)能(Neng)级(Ji)Deep trap 深(Shen)陷(Xian)阱(Zuo)Defeat 缺(Que)陷(Xian)Degenerate semiconductor 简(Jian)并(Bing)半(Ban)导(Dao)体(Ti)Degeneracy 简(Jian)并(Bing)度(Du)Degradation 退(Tui)化(Hua)Degree Celsius(centigrade) /Kelvin 摄(She)氏(Shi)/开(Kai)氏(Shi)温(Wen)度(Du)Delay 延(Yan)迟(Chi) Density 密(Mi)度(Du)Density of states 态(Tai)密(Mi)度(Du)Depletion 耗(Hao)尽(Jin)Depletion approximation 耗(Hao)尽(Jin)近(Jin)似(Si)Depletion contact 耗(Hao)尽(Jin)接(Jie)触(Chu)Depletion depth 耗(Hao)尽(Jin)深(Shen)度(Du)Depletion effect 耗(Hao)尽(Jin)效(Xiao)应(Ying)Depletion layer 耗(Hao)尽(Jin)层(Ceng)Depletion MOS 耗(Hao)尽(Jin)MOSDepletion region 耗(Hao)尽(Jin)区(Qu)Deposited film 淀(Dian)积(Ji)薄(Bao)膜(Mo)Deposition process 淀(Dian)积(Ji)工(Gong)艺(Yi)Design rules 设(She)计(Ji)规(Gui)则(Ze)Die 芯(Xin)片(Pian)（复(Fu)数(Shu)dice）Diode 二(Er)极(Ji)管(Guan)Dielectric 介(Jie)电(Dian)的(De)Dielectric isolation 介(Jie)质(Zhi)隔(Ge)离(Li)Difference-mode input 差(Cha)模(Mo)输(Shu)入(Ru)Differential amplifier 差(Cha)分(Fen)放(Fang)大(Da)器(Qi)Differential capacitance 微(Wei)分(Fen)电(Dian)容(Rong)Diffused junction 扩(Kuo)散(San)结(Jie)Diffusion 扩(Kuo)散(San)Diffusion coefficient 扩(Kuo)散(San)系(Xi)数(Shu)Diffusion constant 扩(Kuo)散(San)常(Chang)数(Shu)Diffusivity 扩(Kuo)散(San)率(Lv)Diffusioncapacitance/barrier/current/furnace 扩(Kuo)散(San)电(Dian)容(Rong)/势(Shi)垒(Lei)/电(Dian)流(Liu)/炉(Lu)Digital circuit 数(Shu)字(Zi)电(Dian)路(Lu)Dipole domain 偶(Ou)极(Ji)畴(Chou)Dipole layer 偶(Ou)极(Ji)层(Ceng)Direct-coupling 直(Zhi)接(Jie)耦(Zuo)合(He)Direct-gap semiconductor 直(Zhi)接(Jie)带(Dai)隙(Xi)半(Ban)导(Dao)体(Ti)Direct transition 直(Zhi)接(Jie)跃(Yue)迁(Qian)Discharge 放(Fang)电(Dian)Discrete component 分(Fen)立(Li)元(Yuan)件(Jian)Dissipation 耗(Hao)散(San)Distribution 分(Fen)布(Bu)Distributed capacitance 分(Fen)布(Bu)电(Dian)容(Rong)Distributed model 分(Fen)布(Bu)模(Mo)型(Xing)Displacement 位(Wei)移(Yi) Dislocation 位(Wei)错(Cuo)Domain 畴(Chou) Donor 施(Shi)主(Zhu)Donor exhaustion 施(Shi)主(Zhu)耗(Hao)尽(Jin)Dopant 掺(Chan)杂(Za)剂(Ji)Doped semiconductor 掺(Chan)杂(Za)半(Ban)导(Dao)体(Ti)Doping concentration 掺(Chan)杂(Za)浓(Nong)度(Du)Double-diffusive MOS(DMOS)双(Shuang)扩(Kuo)散(San)MOS.Drift 漂(Piao)移(Yi) Drift field 漂(Piao)移(Yi)电(Dian)场(Chang)Drift mobility 迁(Qian)移(Yi)率(Lv)Dry etching 干(Gan)法(Fa)腐(Fu)蚀(Shi)Dry/wet oxidation 干(Gan)/湿(Shi)法(Fa)氧(Yang)化(Hua)Dose 剂(Ji)量(Liang)Duty cycle 工(Gong)作(Zuo)周(Zhou)期(Qi)Dual-in-line package （DIP） 双(Shuang)列(Lie)直(Zhi)插(Cha)式(Shi)封(Feng)装(Zhuang)Dynamics 动(Dong)态(Tai)Dynamic characteristics 动(Dong)态(Tai)属(Shu)性(Xing)Dynamic impedance 动(Dong)态(Tai)阻(Zu)抗(Kang)EEarly effect 厄(E)利(Li)效(Xiao)应(Ying)Early failure 早(Zao)期(Qi)失(Shi)效(Xiao)Effective mass 有(You)效(Xiao)质(Zhi)量(Liang)Einstein relation(ship) 爱(Ai)因(Yin)斯(Si)坦(Tan)关(Guan)系(Xi)Electric Erase Programmable Read Only Memory(E2PROM) 一(Yi)次(Ci)性(Xing)电(Dian)可(Ke)擦(Ba)除(Chu)只(Zhi)读(Du)存(Cun)储(Chu)器(Qi)Electrode 电(Dian)极(Ji)Electrominggratim 电(Dian)迁(Qian)移(Yi)Electron affinity 电(Dian)子(Zi)亲(Qin)和(He)势(Shi)Electronic -grade 电(Dian)子(Zi)能(Neng)Electron-beam photo-resist exposure 光(Guang)致(Zhi)抗(Kang)蚀(Shi)剂(Ji)的(De)电(Dian)子(Zi)束(Shu)曝(Pu)光(Guang)Electron gas 电(Dian)子(Zi)气(Qi)Electron-grade water 电(Dian)子(Zi)级(Ji)纯(Chun)水(Shui)Electron trapping center 电(Dian)子(Zi)俘(Fu)获(Huo)中(Zhong)心(Xin)Electron Volt (eV) 电(Dian)子(Zi)伏(Fu)Electrostatic 静(Jing)电(Dian)的(De)Element 元(Yuan)素(Su)/元(Yuan)件(Jian)/配(Pei)件(Jian)Elemental semiconductor 元(Yuan)素(Su)半(Ban)导(Dao)体(Ti)Ellipse 椭(Tuo)圆(Yuan)Ellipsoid 椭(Tuo)球(Qiu)Emitter 发(Fa)射(She)极(Ji)Emitter-coupled logic 发(Fa)射(She)极(Ji)耦(Zuo)合(He)逻(Luo)辑(Ji)Emitter-coupled pair 发(Fa)射(She)极(Ji)耦(Zuo)合(He)对(Dui)Emitter follower 射(She)随(Sui)器(Qi)Empty band 空(Kong)带(Dai)Emitter crowding effect 发(Fa)射(She)极(Ji)集(Ji)边(Bian)（拥(Yong)挤(Ji)）效(Xiao)应(Ying)Endurance test =life test 寿(Shou)命(Ming)测(Ce)试(Shi)Energy state 能(Neng)态(Tai)Energy momentum diagram 能(Neng)量(Liang)-动(Dong)量(Liang)(E-K)图(Tu)Enhancement mode 增(Zeng)强(Qiang)型(Xing)模(Mo)式(Shi)Enhancement MOS 增(Zeng)强(Qiang)性(Xing)MOS Entefic (低(Di))共(Gong)溶(Rong)的(De)Environmental test 环(Huan)境(Jing)测(Ce)试(Shi)Epitaxial 外(Wai)延(Yan)的(De)Epitaxial layer 外(Wai)延(Yan)层(Ceng)Epitaxial slice 外(Wai)延(Yan)片(Pian)Expitaxy 外(Wai)延(Yan)Equivalent curcuit 等(Deng)效(Xiao)电(Dian)路(Lu)Equilibrium majority /minority carriers 平(Ping)衡(Heng)多(Duo)数(Shu)/少(Shao)数(Shu)载(Zai)流(Liu)子(Zi)Erasable Programmable ROM (EPROM)可(Ke)搽(Cha)取(Qu)（编(Bian)程(Cheng)）存(Cun)储(Chu)器(Qi)Error function complement 余(Yu)误(Wu)差(Cha)函(Han)数(Shu)Etch 刻(Ke)蚀(Shi)Etchant 刻(Ke)蚀(Shi)剂(Ji)Etching mask 抗(Kang)蚀(Shi)剂(Ji)掩(Yan)模(Mo)Excess carrier 过(Guo)剩(Sheng)载(Zai)流(Liu)子(Zi)Excitation energy 激(Ji)发(Fa)能(Neng)Excited state 激(Ji)发(Fa)态(Tai)Exciton 激(Ji)子(Zi)Extrapolation 外(Wai)推(Tui)法(Fa)Extrinsic 非(Fei)本(Ben)征(Zheng)的(De)Extrinsic semiconductor 杂(Za)质(Zhi)半(Ban)导(Dao)体(Ti)FFace - centered 面(Mian)心(Xin)立(Li)方(Fang)Fall time 下(Xia)降(Jiang)时(Shi)间(Jian)Fan-in 扇(Shan)入(Ru)Fan-out 扇(Shan)出(Chu)Fast recovery 快(Kuai)恢(Hui)复(Fu)Fast surface states 快(Kuai)界(Jie)面(Mian)态(Tai)Feedback 反(Fan)馈(Kui)Fermi level 费(Fei)米(Mi)能(Neng)级(Ji)Fermi-Dirac Distribution 费(Fei)米(Mi)-狄(Di)拉(La)克(Ke)分(Fen)布(Bu)Femi potential 费(Fei)米(Mi)势(Shi)Fick equation 菲(Fei)克(Ke)方(Fang)程(Cheng)（扩(Kuo)散(San)）Field effect transistor 场(Chang)效(Xiao)应(Ying)晶(Jing)体(Ti)管(Guan)Field oxide 场(Chang)氧(Yang)化(Hua)层(Ceng)Filled band 满(Man)带(Dai)Film 薄(Bao)膜(Mo)Flash memory 闪(Shan)烁(Shuo)存(Cun)储(Chu)器(Qi)Flat band 平(Ping)带(Dai)Flat pack 扁(Bian)平(Ping)封(Feng)装(Zhuang)Flicker noise 闪(Shan)烁(Shuo)（变(Bian)）噪(Zao)声(Sheng)Flip-flop toggle 触(Chu)发(Fa)器(Qi)翻(Fan)转(Zhuan)Floating gate 浮(Fu)栅(Zha)Fluoride etch 氟(Fu)化(Hua)氢(Qing)刻(Ke)蚀(Shi)Forbidden band 禁(Jin)带(Dai)Forward bias 正(Zheng)向(Xiang)偏(Pian)置(Zhi)Forward blocking /conducting正(Zheng)向(Xiang)阻(Zu)断(Duan)/导(Dao)通(Tong)Frequency deviation noise频(Pin)率(Lv)漂(Piao)移(Yi)噪(Zao)声(Sheng)Frequency response 频(Pin)率(Lv)响(Xiang)应(Ying)Function 函(Han)数(Shu)GGain 增(Zeng)益(Yi) Gallium-Arsenide(GaAs) 砷(Shen)化(Hua)钾(Jia)Gamy ray r 射(She)线(Xian)Gate 门(Men)、栅(Zha)、控(Kong)制(Zhi)极(Ji)Gate oxide 栅(Zha)氧(Yang)化(Hua)层(Ceng)Gauss（ian） 高(Gao)斯(Si)Gaussian distribution profile 高(Gao)斯(Si)掺(Chan)杂(Za)分(Fen)布(Bu)Generation-recombination 产(Chan)生(Sheng)-复(Fu)合(He)Geometries 几(Ji)何(He)尺(Chi)寸(Cun)Germanium(Ge) 锗(Zhe)Graded 缓(Huan)变(Bian)的(De)Graded (gradual) channel 缓(Huan)变(Bian)沟(Gou)道(Dao)Graded junction 缓(Huan)变(Bian)结(Jie)Grain 晶(Jing)粒(Li)Gradient 梯(Ti)度(Du)Grown junction 生(Sheng)长(Chang)结(Jie)Guard ring 保(Bao)护(Hu)环(Huan)Gummel-Poom model 葛(Ge)谋(Mou)-潘(Pan) 模(Mo)型(Xing)Gunn - effect 狄(Di)氏(Shi)效(Xiao)应(Ying)HHardened device 辐(Fu)射(She)加(Jia)固(Gu)器(Qi)件(Jian)Heat of formation 形(Xing)成(Cheng)热(Re)Heat sink 散(San)热(Re)器(Qi)、热(Re)沉(Chen)Heavy/light hole band 重(Zhong)/轻(Qing) 空(Kong)穴(Xue)带(Dai)Heavy saturation 重(Zhong)掺(Chan)杂(Za)Hell - effect 霍(Huo)尔(Er)效(Xiao)应(Ying)Heterojunction 异(Yi)质(Zhi)结(Jie)Heterojunction structure 异(Yi)质(Zhi)结(Jie)结(Jie)构(Gou)Heterojunction Bipolar Transistor（HBT）异(Yi)质(Zhi)结(Jie)双(Shuang)极(Ji)型(Xing)晶(Jing)体(Ti)High field property 高(Gao)场(Chang)特(Te)性(Xing)High-performance MOS.( H-MOS)高(Gao)性(Xing)能(Neng)MOS. Hormalized 归(Gui)一(Yi)化(Hua)Horizontal epitaxial reactor 卧(Wo)式(Shi)外(Wai)延(Yan)反(Fan)应(Ying)器(Qi)Hot carrior 热(Re)载(Zai)流(Liu)子(Zi)Hybrid integration 混(Hun)合(He)集(Ji)成(Cheng)IImage - force 镜(Jing)象(Xiang)力(Li)Impact ionization 碰(Peng)撞(Zhuang)电(Dian)离(Li)Impedance 阻(Zu)抗(Kang)Imperfect structure 不(Bu)完(Wan)整(Zheng)结(Jie)构(Gou)Implantation dose 注(Zhu)入(Ru)剂(Ji)量(Liang)Implanted ion 注(Zhu)入(Ru)离(Li)子(Zi)Impurity 杂(Za)质(Zhi)Impurity scattering 杂(Za)志(Zhi)散(San)射(She)Incremental resistance 电(Dian)阻(Zu)增(Zeng)量(Liang)（微(Wei)分(Fen)电(Dian)阻(Zu)）In-contact mask 接(Jie)触(Chu)式(Shi)掩(Yan)模(Mo)Indium tin oxide (ITO) 铟(Zuo)锡(Xi)氧(Yang)化(Hua)物(Wu)Induced channel 感(Gan)应(Ying)沟(Gou)道(Dao)Infrared 红(Hong)外(Wai)的(De)Injection 注(Zhu)入(Ru)Input offset voltage 输(Shu)入(Ru)失(Shi)调(Diao)电(Dian)压(Ya)Insulator 绝(Jue)缘(Yuan)体(Ti)Insulated Gate FET(IGFET)绝(Jue)缘(Yuan)栅(Zha)FET Integrated injection logic集(Ji)成(Cheng)注(Zhu)入(Ru)逻(Luo)辑(Ji)Integration 集(Ji)成(Cheng)、积(Ji)分(Fen)Interconnection 互(Hu)连(Lian)Interconnection time delay 互(Hu)连(Lian)延(Yan)时(Shi)Interdigitated structure 交(Jiao)互(Hu)式(Shi)结(Jie)构(Gou)Interface 界(Jie)面(Mian)Interference 干(Gan)涉(She)International system of unions国(Guo)际(Ji)单(Dan)位(Wei)制(Zhi)Internally scattering 谷(Gu)间(Jian)散(San)射(She)Interpolation 内(Nei)插(Cha)法(Fa)Intrinsic 本(Ben)征(Zheng)的(De)Intrinsic semiconductor 本(Ben)征(Zheng)半(Ban)导(Dao)体(Ti)Inverse operation 反(Fan)向(Xiang)工(Gong)作(Zuo)Inversion 反(Fan)型(Xing)Inverter 倒(Dao)相(Xiang)器(Qi)Ion 离(Li)子(Zi)Ion beam 离(Li)子(Zi)束(Shu)Ion etching 离(Li)子(Zi)刻(Ke)蚀(Shi)Ion implantation 离(Li)子(Zi)注(Zhu)入(Ru)Ionization 电(Dian)离(Li)Ionization energy 电(Dian)离(Li)能(Neng)Irradiation 辐(Fu)照(Zhao)Isolation land 隔(Ge)离(Li)岛(Dao)Isotropic 各(Ge)向(Xiang)同(Tong)性(Xing)JJunction FET(JFET) 结(Jie)型(Xing)场(Chang)效(Xiao)应(Ying)管(Guan)Junction isolation 结(Jie)隔(Ge)离(Li)Junction spacing 结(Jie)间(Jian)距(Ju)Junction side-wall 结(Jie)侧(Ce)壁(Bi)LLatch up 闭(Bi)锁(Suo)Lateral 横(Heng)向(Xiang)的(De)Lattice 晶(Jing)格(Ge)Layout 版(Ban)图(Tu)Latticebinding/cell/constant/defect/distortion 晶(Jing)格(Ge)结(Jie)合(He)力(Li)/晶(Jing)胞(Bao)/晶(Jing)格(Ge)/晶(Jing)格(Ge)常(Chang)熟(Shu)/晶(Jing)格(Ge)缺(Que)陷(Xian)/晶(Jing)格(Ge)畸(Ji)变(Bian)Leakage current （泄(Xie)）漏(Lou)电(Dian)流(Liu)Level shifting 电(Dian)平(Ping)移(Yi)动(Dong)Life time 寿(Shou)命(Ming)linearity 线(Xian)性(Xing)度(Du)Linked bond 共(Gong)价(Jia)键(Jian)Liquid Nitrogen 液(Ye)氮(Dan)Liquid－phase epitaxial growth technique 液(Ye)相(Xiang)外(Wai)延(Yan)生(Sheng)长(Chang)技(Ji)术(Shu)Lithography 光(Guang)刻(Ke)Light Emitting Diode(LED) 发(Fa)光(Guang)二(Er)极(Ji)管(Guan)Load line or Variable 负(Fu)载(Zai)线(Xian)Locating and Wiring 布(Bu)局(Ju)布(Bu)线(Xian)Longitudinal 纵(Zong)向(Xiang)的(De)Logic swing 逻(Luo)辑(Ji)摆(Bai)幅(Fu)Lorentz 洛(Luo)沦(Lun)兹(Zi)Lumped model 集(Ji)总(Zong)模(Mo)型(Xing)MMajority carrier 多(Duo)数(Shu)载(Zai)流(Liu)子(Zi)Mask 掩(Yan)膜(Mo)板(Ban)，光(Guang)刻(Ke)板(Ban)Mask level 掩(Yan)模(Mo)序(Xu)号(Hao)Mask set 掩(Yan)模(Mo)组(Zu)Mass - action law质(Zhi)量(Liang)守(Shou)恒(Heng)定(Ding)律(Lv)Master-slave D flip-flop主(Zhu)从(Cong)D触(Chu)发(Fa)器(Qi)Matching 匹(Pi)配(Pei)Maxwell 麦(Mai)克(Ke)斯(Si)韦(Wei)Mean free path 平(Ping)均(Jun)自(Zi)由(You)程(Cheng)Meandered emitter junction梳(Shu)状(Zhuang)发(Fa)射(She)极(Ji)结(Jie)Mean time before failure (MTBF) 平(Ping)均(Jun)工(Gong)作(Zuo)时(Shi)间(Jian)Megeto - resistance 磁(Ci)阻(Zu)Mesa 台(Tai)面(Mian)MESFET-Metal Semiconductor金(Jin)属(Shu)半(Ban)导(Dao)体(Ti)FETMetallization 金(Jin)属(Shu)化(Hua)Microelectronic technique 微(Wei)电(Dian)子(Zi)技(Ji)术(Shu)Microelectronics 微(Wei)电(Dian)子(Zi)学(Xue)Millen indices 密(Mi)勒(Le)指(Zhi)数(Shu)Minority carrier 少(Shao)数(Shu)载(Zai)流(Liu)子(Zi)Misfit 失(Shi)配(Pei)Mismatching 失(Shi)配(Pei)Mobile ions 可(Ke)动(Dong)离(Li)子(Zi)Mobility 迁(Qian)移(Yi)率(Lv)Module 模(Mo)块(Kuai)Modulate 调(Diao)制(Zhi)Molecular crystal分(Fen)子(Zi)晶(Jing)体(Ti)Monolithic IC 单(Dan)片(Pian)IC MOSFET金(Jin)属(Shu)氧(Yang)化(Hua)物(Wu)半(Ban)导(Dao)体(Ti)场(Chang)效(Xiao)应(Ying)晶(Jing)体(Ti)管(Guan)Mos. Transistor(MOST )MOS. 晶(Jing)体(Ti)管(Guan)Multiplication 倍(Bei)增(Zeng)Modulator 调(Diao)制(Zhi)Multi-chip IC 多(Duo)芯(Xin)片(Pian)ICMulti-chip module(MCM) 多(Duo)芯(Xin)片(Pian)模(Mo)块(Kuai)Multiplication coefficient倍(Bei)增(Zeng)因(Yin)子(Zi)NNaked chip 未(Wei)封(Feng)装(Zhuang)的(De)芯(Xin)片(Pian)（裸(Luo)片(Pian)）Negative feedback 负(Fu)反(Fan)馈(Kui)Negative resistance 负(Fu)阻(Zu)Nesting 套(Tao)刻(Ke)Negative-temperature-coefficient 负(Fu)温(Wen)度(Du)系(Xi)数(Shu)Noise margin 噪(Zao)声(Sheng)容(Rong)限(Xian)Nonequilibrium 非(Fei)平(Ping)衡(Heng)Nonrolatile 非(Fei)挥(Hui)发(Fa)（易(Yi)失(Shi)）性(Xing)Normally off/on 常(Chang)闭(Bi)/开(Kai)Numerical analysis 数(Shu)值(Zhi)分(Fen)析(Xi)OOccupied band 满(Man)带(Dai)Officienay 功(Gong)率(Lv)Offset 偏(Pian)移(Yi)、失(Shi)调(Diao)On standby 待(Dai)命(Ming)状(Zhuang)态(Tai)Ohmic contact 欧(Ou)姆(Mu)接(Jie)触(Chu)Open circuit 开(Kai)路(Lu)Operating point 工(Gong)作(Zuo)点(Dian)Operating bias 工(Gong)作(Zuo)偏(Pian)置(Zhi)Operational amplifier (OPAMP)运(Yun)算(Suan)放(Fang)大(Da)器(Qi)Optical photon =photon 光(Guang)子(Zi)Optical quenching光(Guang)猝(Zuo)灭(Mie)Optical transition 光(Guang)跃(Yue)迁(Qian)Optical-coupled isolator光(Guang)耦(Zuo)合(He)隔(Ge)离(Li)器(Qi)Organic semiconductor有(You)机(Ji)半(Ban)导(Dao)体(Ti)Orientation 晶(Jing)向(Xiang)、定(Ding)向(Xiang)Outline 外(Wai)形(Xing)Out-of-contact mask非(Fei)接(Jie)触(Chu)式(Shi)掩(Yan)模(Mo)Output characteristic 输(Shu)出(Chu)特(Te)性(Xing)Output voltage swing 输(Shu)出(Chu)电(Dian)压(Ya)摆(Bai)幅(Fu)Overcompensation 过(Guo)补(Bu)偿(Chang)Over-current protection 过(Guo)流(Liu)保(Bao)护(Hu)Over shoot 过(Guo)冲(Chong)Over-voltage protection 过(Guo)压(Ya)保(Bao)护(Hu)Overlap 交(Jiao)迭(Die)Overload 过(Guo)载(Zai)Oscillator 振(Zhen)荡(Dang)器(Qi)Oxide 氧(Yang)化(Hua)物(Wu)Oxidation 氧(Yang)化(Hua)Oxide passivation 氧(Yang)化(Hua)层(Ceng)钝(Dun)化(Hua)PPackage 封(Feng)装(Zhuang)Pad 压(Ya)焊(Han)点(Dian)Parameter 参(Can)数(Shu)Parasitic effect 寄(Ji)生(Sheng)效(Xiao)应(Ying)Parasitic oscillation 寄(Ji)生(Sheng)振(Zhen)荡(Dang)Passination 钝(Dun)化(Hua)Passive component 无(Wu)源(Yuan)元(Yuan)件(Jian)Passive device 无(Wu)源(Yuan)器(Qi)件(Jian)Passive surface 钝(Dun)化(Hua)界(Jie)面(Mian)Parasitic transistor 寄(Ji)生(Sheng)晶(Jing)体(Ti)管(Guan)Peak-point voltage 峰(Feng)点(Dian)电(Dian)压(Ya)Peak voltage 峰(Feng)值(Zhi)电(Dian)压(Ya)Permanent-storage circuit 永(Yong)久(Jiu)存(Cun)储(Chu)电(Dian)路(Lu)Period 周(Zhou)期(Qi)Periodic table 周(Zhou)期(Qi)表(Biao)Permeable - base 可(Ke)渗(Shen)透(Tou)基(Ji)区(Qu)Phase-lock loop 锁(Suo)相(Xiang)环(Huan)Phase drift 相(Xiang)移(Yi)Phonon spectra 声(Sheng)子(Zi)谱(Pu)Photo conduction 光(Guang)电(Dian)导(Dao)Photo diode 光(Guang)电(Dian)二(Er)极(Ji)管(Guan)Photoelectric cell 光(Guang)电(Dian)池(Chi)Photoelectric effect 光(Guang)电(Dian)效(Xiao)应(Ying)Photoenic devices 光(Guang)子(Zi)器(Qi)件(Jian)Photolithographic process 光(Guang)刻(Ke)工(Gong)艺(Yi)(photo) resist （光(Guang)敏(Min)）抗(Kang)腐(Fu)蚀(Shi)剂(Ji)Pin 管(Guan)脚(Jiao)Pinch off 夹(Jia)断(Duan)Pinning of Fermi level 费(Fei)米(Mi)能(Neng)级(Ji)的(De)钉(Ding)扎(Zha)（效(Xiao)应(Ying)）Planar process 平(Ping)面(Mian)工(Gong)艺(Yi)Planar transistor 平(Ping)面(Mian)晶(Jing)体(Ti)管(Guan)Plasma 等(Deng)离(Li)子(Zi)体(Ti)Plezoelectric effect 压(Ya)电(Dian)效(Xiao)应(Ying)Poisson equation 泊(Bo)松(Song)方(Fang)程(Cheng)Point contact 点(Dian)接(Jie)触(Chu)Polarity 极(Ji)性(Xing)Polycrystal 多(Duo)晶(Jing)Polymer semiconductor聚(Ju)合(He)物(Wu)半(Ban)导(Dao)体(Ti)Poly-silicon 多(Duo)晶(Jing)硅(Gui)Potential (电(Dian))势(Shi)Potential barrier 势(Shi)垒(Lei)Potential well 势(Shi)阱(Zuo)Power dissipation 功(Gong)耗(Hao)Power transistor 功(Gong)率(Lv)晶(Jing)体(Ti)管(Guan)Preamplifier 前(Qian)置(Zhi)放(Fang)大(Da)器(Qi)Primary flat 主(Zhu)平(Ping)面(Mian)Principal axes 主(Zhu)轴(Zhou)Print-circuit board(PCB) 印(Yin)制(Zhi)电(Dian)路(Lu)板(Ban)Probability 几(Ji)率(Lv)Probe 探(Tan)针(Zhen)Process 工(Gong)艺(Yi)Propagation delay 传(Chuan)输(Shu)延(Yan)时(Shi)Pseudopotential method 膺(Zuo)势(Shi)发(Fa)Punch through 穿(Chuan)通(Tong)Pulse triggering/modulating 脉(Mai)冲(Chong)触(Chu)发(Fa)/调(Diao)制(Zhi)PulseWiden Modulator(PWM) 脉(Mai)冲(Chong)宽(Kuan)度(Du)调(Diao)制(Zhi)Punchthrough 穿(Chuan)通(Tong)Push-pull stage 推(Tui)挽(Wan)级(Ji)QQuality factor 品(Pin)质(Zhi)因(Yin)子(Zi)Quantization 量(Liang)子(Zi)化(Hua)Quantum 量(Liang)子(Zi)Quantum efficiency量(Liang)子(Zi)效(Xiao)应(Ying)Quantum mechanics 量(Liang)子(Zi)力(Li)学(Xue)Quasi – Fermi－level准(Zhun)费(Fei)米(Mi)能(Neng)级(Ji)Quartz 石(Shi)英(Ying)RRadiation conductivity 辐(Fu)射(She)电(Dian)导(Dao)率(Lv)Radiation damage 辐(Fu)射(She)损(Sun)伤(Shang)Radiation flux density 辐(Fu)射(She)通(Tong)量(Liang)密(Mi)度(Du)Radiation hardening 辐(Fu)射(She)加(Jia)固(Gu)Radiation protection 辐(Fu)射(She)保(Bao)护(Hu)Radiative - recombination辐(Fu)照(Zhao)复(Fu)合(He)Radioactive 放(Fang)射(She)性(Xing)Reach through 穿(Chuan)通(Tong)Reactive sputtering source 反(Fan)应(Ying)溅(Jian)射(She)源(Yuan)Read diode 里(Li)德(De)二(Er)极(Ji)管(Guan)Recombination 复(Fu)合(He)Recovery diode 恢(Hui)复(Fu)二(Er)极(Ji)管(Guan)Reciprocal lattice 倒(Dao)核(He)子(Zi)Recovery time 恢(Hui)复(Fu)时(Shi)间(Jian)Rectifier 整(Zheng)流(Liu)器(Qi)（管(Guan)）Rectifying contact 整(Zheng)流(Liu)接(Jie)触(Chu)Reference 基(Ji)准(Zhun)点(Dian) 基(Ji)准(Zhun) 参(Can)考(Kao)点(Dian)Refractive index 折(Zhe)射(She)率(Lv)Register 寄(Ji)存(Cun)器(Qi)Registration 对(Dui)准(Zhun)Regulate 控(Kong)制(Zhi) 调(Diao)整(Zheng)Relaxation lifetime 驰(Chi)豫(Yu)时(Shi)间(Jian)Reliability 可(Ke)靠(Kao)性(Xing)Resonance 谐(Xie)振(Zhen)Resistance 电(Dian)阻(Zu)Resistor 电(Dian)阻(Zu)器(Qi)Resistivity 电(Dian)阻(Zu)率(Lv)Regulator 稳(Wen)压(Ya)管(Guan)（器(Qi)）Relaxation 驰(Chi)豫(Yu)Resonant frequency共(Gong)射(She)频(Pin)率(Lv)Response time 响(Xiang)应(Ying)时(Shi)间(Jian)Reverse 反(Fan)向(Xiang)的(De)Reverse bias 反(Fan)向(Xiang)偏(Pian)置(Zhi)SSampling circuit 取(Qu)样(Yang)电(Dian)路(Lu)Sapphire 蓝(Lan)宝(Bao)石(Shi)（Al2O3）Satellite valley 卫(Wei)星(Xing)谷(Gu)Saturated current range电(Dian)流(Liu)饱(Bao)和(He)区(Qu)Saturation region 饱(Bao)和(He)区(Qu)Saturation 饱(Bao)和(He)的(De)Scaled down 按(An)比(Bi)例(Li)缩(Suo)小(Xiao)Scattering 散(San)射(She)Schockley diode 肖(Xiao)克(Ke)莱(Lai)二(Er)极(Ji)管(Guan)Schottky 肖(Xiao)特(Te)基(Ji)Schottky barrier 肖(Xiao)特(Te)基(Ji)势(Shi)垒(Lei)Schottky contact 肖(Xiao)特(Te)基(Ji)接(Jie)触(Chu)Schrodingen 薛(Xue)定(Ding)厄(E)Scribing grid 划(Hua)片(Pian)格(Ge)Secondary flat 次(Ci)平(Ping)面(Mian)Seed crystal 籽(Zi)晶(Jing)Segregation 分(Fen)凝(Ning)Selectivity 选(Xuan)择(Ze)性(Xing)Self aligned 自(Zi)对(Dui)准(Zhun)的(De)Self diffusion 自(Zi)扩(Kuo)散(San)Semiconductor 半(Ban)导(Dao)体(Ti)Semiconductor-controlled rectifier 可(Ke)控(Kong)硅(Gui)Sendsitivity 灵(Ling)敏(Min)度(Du)Serial 串(Chuan)行(Xing)/串(Chuan)联(Lian)Series inductance 串(Chuan)联(Lian)电(Dian)感(Gan)Settle time 建(Jian)立(Li)时(Shi)间(Jian)Sheet resistance 薄(Bao)层(Ceng)电(Dian)阻(Zu)Shield 屏(Ping)蔽(Bi)Short circuit 短(Duan)路(Lu)Shot noise 散(San)粒(Li)噪(Zao)声(Sheng)Shunt 分(Fen)流(Liu)Sidewall capacitance边(Bian)墙(Qiang)电(Dian)容(Rong) Signal 信(Xin)号(Hao)Silica glass 石(Shi)英(Ying)玻(Bo)璃(Li)Silicon 硅(Gui)Silicon carbide 碳(Tan)化(Hua)硅(Gui)Silicon dioxide (SiO2) 二(Er)氧(Yang)化(Hua)硅(Gui)Silicon Nitride(Si3N4) 氮(Dan)化(Hua)硅(Gui)Silicon On Insulator 绝(Jue)缘(Yuan)硅(Gui)Siliver whiskers 银(Yin)须(Xu)Simple cubic 简(Jian)立(Li)方(Fang)Single crystal 单(Dan)晶(Jing)Sink 沉(Chen)Skin effect 趋(Qu)肤(Fu)效(Xiao)应(Ying)Snap time 急(Ji)变(Bian)时(Shi)间(Jian)Sneak path 潜(Qian)行(Xing)通(Tong)路(Lu)Sulethreshold 亚(Ya)阈(Zuo)的(De)Solar battery/cell 太(Tai)阳(Yang)能(Neng)电(Dian)池(Chi)Solid circuit 固(Gu)体(Ti)电(Dian)路(Lu)Solid Solubility 固(Gu)溶(Rong)度(Du)Sonband 子(Zi)带(Dai)Source 源(Yuan)极(Ji)Source follower 源(Yuan)随(Sui)器(Qi)Space charge 空(Kong)间(Jian)电(Dian)荷(He)Specific heat(PT) 热(Re)Speed-power product 速(Su)度(Du)功(Gong)耗(Hao)乘(Cheng)积(Ji) Spherical 球(Qiu)面(Mian)的(De)Spin 自(Zi)旋(Xuan) Split 分(Fen)裂(Lie)Spontaneous emission 自(Zi)发(Fa)发(Fa)射(She)Spreading resistance扩(Kuo)展(Zhan)电(Dian)阻(Zu)Sputter 溅(Jian)射(She) Stacking fault 层(Ceng)错(Cuo)Static characteristic 静(Jing)态(Tai)特(Te)性(Xing)Stimulated emission 受(Shou)激(Ji)发(Fa)射(She)Stimulated recombination 受(Shou)激(Ji)复(Fu)合(He)Storage time 存(Cun)储(Chu)时(Shi)间(Jian)Stress 应(Ying)力(Li)Straggle 偏(Pian)差(Cha)Sublimation 升(Sheng)华(Hua)Substrate 衬(Chen)底(Di)Substitutional 替(Ti)位(Wei)式(Shi)的(De)Superlattice 超(Chao)晶(Jing)格(Ge)Supply 电(Dian)源(Yuan) Surface 表(Biao)面(Mian)Surge capacity 浪(Lang)涌(Yong)能(Neng)力(Li)Subscript 下(Xia)标(Biao)Switching time 开(Kai)关(Guan)时(Shi)间(Jian)Switch 开(Kai)关(Guan)TTailing 扩(Kuo)展(Zhan)Terminal 终(Zhong)端(Duan)Tensor 张(Zhang)量(Liang) Tensorial 张(Zhang)量(Liang)的(De)Thermal activation 热(Re)激(Ji)发(Fa)Thermal conductivity 热(Re)导(Dao)率(Lv)Thermal equilibrium 热(Re)平(Ping)衡(Heng)Thermal Oxidation 热(Re)氧(Yang)化(Hua)Thermal resistance 热(Re)阻(Zu)Thermal sink 热(Re)沉(Chen)Thermal velocity 热(Re)运(Yun)动(Dong)Thermoelectricpovoer 温(Wen)差(Cha)电(Dian)动(Dong)势(Shi)率(Lv)Thick-film technique 厚(Hou)膜(Mo)技(Ji)术(Shu)Thin-film hybrid IC薄(Bao)膜(Mo)混(Hun)合(He)集(Ji)成(Cheng)电(Dian)路(Lu)Thin-Film Transistor(TFT) 薄(Bao)膜(Mo)晶(Jing)体(Ti)Threshlod 阈(Zuo)值(Zhi)Thyistor 晶(Jing)闸(Zha)管(Guan)Transconductance 跨(Kua)导(Dao)Transfer characteristic 转(Zhuan)移(Yi)特(Te)性(Xing)Transfer electron 转(Zhuan)移(Yi)电(Dian)子(Zi)Transfer function 传(Chuan)输(Shu)函(Han)数(Shu) Transient 瞬(Shun)态(Tai)的(De)Transistor aging(stress) 晶(Jing)体(Ti)管(Guan)老(Lao)化(Hua)Transit time 渡(Du)越(Yue)时(Shi)间(Jian)Transition 跃(Yue)迁(Qian)Transition-metal silica 过(Guo)度(Du)金(Jin)属(Shu)硅(Gui)化(Hua)物(Wu)Transition probability 跃(Yue)迁(Qian)几(Ji)率(Lv)Transition region 过(Guo)渡(Du)区(Qu)Transport 输(Shu)运(Yun) Transverse 横(Heng)向(Xiang)的(De)Trap 陷(Xian)阱(Zuo) Trapping 俘(Fu)获(Huo)Trapped charge 陷(Xian)阱(Zuo)电(Dian)荷(He)Triangle generator 三(San)角(Jiao)波(Bo)发(Fa)生(Sheng)器(Qi)Triboelectricity 摩(Mo)擦(Ba)电(Dian)Trigger 触(Chu)发(Fa)Trim 调(Diao)配(Pei) 调(Diao)整(Zheng)Triple diffusion 三(San)重(Zhong)扩(Kuo)散(San)Truth table 真(Zhen)值(Zhi)表(Biao)Tolerahce 容(Rong)差(Cha)Tunnel(ing) 隧(Sui)道(Dao)（穿(Chuan)）Tunnel current 隧(Sui)道(Dao)电(Dian)流(Liu)Turn over 转(Zhuan)折(Zhe)Turn - off time 关(Guan)断(Duan)时(Shi)间(Jian)UUltraviolet 紫(Zi)外(Wai)的(De)Unijunction 单(Dan)结(Jie)的(De)Unipolar 单(Dan)极(Ji)的(De)Unit cell 原(Yuan)（元(Yuan)）胞(Bao)Unity-gain frequency 单(Dan)位(Wei)增(Zeng)益(Yi)频(Pin)率(Lv)Unilateral-switch单(Dan)向(Xiang)开(Kai)关(Guan)VVacancy 空(Kong)位(Wei) Vacuum 真(Zhen)空(Kong)Valence(value) band 价(Jia)带(Dai) Value band edge 价(Jia)带(Dai)顶(Ding)Valence bond 价(Jia)键(Jian) Vapour phase 汽(Qi)相(Xiang)Varactor 变(Bian)容(Rong)管(Guan) Varistor 变(Bian)阻(Zu)器(Qi)Vibration 振(Zhen)动(Dong) Voltage 电(Dian)压(Ya)WWafer 晶(Jing)片(Pian)Wave equation 波(Bo)动(Dong)方(Fang)程(Cheng)Wave guide 波(Bo)导(Dao)Wave number 波(Bo)数(Shu)Wave-particle duality 波(Bo)粒(Li)二(Er)相(Xiang)性(Xing)Wear-out 烧(Shao)毁(Hui)Wire routing 布(Bu)线(Xian)Work function 功(Gong)函(Han)数(Shu)Worst-case device 最(Zui)坏(Huai)情(Qing)况(Kuang)器(Qi)件(Jian)YYield 成(Cheng)品(Pin)率(Lv)ZZener breakdown 齐(Qi)纳(Na)击(Ji)穿(Chuan)Zone melting 区(Qu)熔(Rong)法(Fa)感(Gan)恩(En)赞(Zan)赏(Shang)，为(Wei)中(Zhong)国(Guo)芯(Xin)加(Jia)油(You)！大(Da)家(Jia)怎(Zen)么(Me)看(Kan)？快(Kuai)来(Lai)留(Liu)言(Yan)交(Jiao)流(Liu)吧(Ba)^_^如(Ru)侵(Qin)删(Shan)丨(Zuo)如(Ru)转(Zhuan)注(Zhu)【原(Yuan)创(Chuang)不(Bu)易(Yi)，记(Ji)得(De)转(Zhuan)发(Fa)】半(Ban)导(Dao)体(Ti)人(Ren)临(Lin)走(Zou)记(Ji)得(De)点(Dian)下(Xia)方(Fang)拇(Mu)指(Zhi)留(Liu)下(Xia)脚(Jiao)印(Yin)。如(Ru)觉(Jue)文(Wen)章(Zhang)不(Bu)错(Cuo)，留(Liu)言(Yan)评(Ping)论(Lun)，转(Zhuan)发(Fa)更(Geng)多(Duo)朋(Peng)友(You)，传(Chuan)递(Di)咱(Zan)半(Ban)导(Dao)体(Ti)人(Ren)的(De)观(Guan)点(Dian)。智(Zhi)能(Neng)推(Tui)荐(Jian)：80页(Ye)PPT看(Kan)懂(Dong)半(Ban)导(Dao)体(Ti)行(Xing)业(Ye)一(Yi)颗(Ke)芯(Xin)片(Pian)，咋(Zha)就(Jiu)这(Zhe)么(Me)难(Nan)造(Zao)？ |转(Zhuan)疯(Feng)了(Liao)中(Zhong)国(Guo)半(Ban)导(Dao)体(Ti)困(Kun)境(Jing)！这(Zhe)篇(Pian)讲(Jiang)全(Quan)了(Liao)！中(Zhong)国(Guo)芯(Xin)酸(Suan)往(Wang)事(Shi)！|戴(Dai)老(Lao)板(Ban)制(Zhi)裁(Cai)晋(Jin)华(Hua)背(Bei)后(Hou)：中(Zhong)国(Guo)尚(Shang)未(Wei)掌(Zhang)控(Kong)的(De)核(He)心(Xin)技(Ji)术(Shu)清(Qing)单(Dan)福(Fu)利(Li)下(Xia)载(Zai)：电(Dian)子(Zi)技(Ji)术(Shu)全(Quan)套(Tao)资(Zi)料(Liao)，工(Gong)程(Cheng)师(Shi)必(Bi)看(Kan)！制(Zhi)裁(Cai)晋(Jin)华(Hua)背(Bei)后(Hou)：中(Zhong)国(Guo)尚(Shang)未(Wei)掌(Zhang)控(Kong)的(De)核(He)心(Xin)技(Ji)术(Shu)清(Qing)单(Dan)！这(Zhe)可(Ke)能(Neng)是(Shi)最(Zui)全(Quan)的(De)，中(Zhong)国(Guo)尚(Shang)未(Wei)掌(Zhang)控(Kong)的(De)核(He)心(Xin)技(Ji)术(Shu)清(Qing)单(Dan)（芯(Xin) 榜(Bang)中(Zhong)国(Guo)半(Ban)导(Dao)体(Ti)排(Pai)行(Xing)榜(Bang)！ 添(Tian) 加(Jia)芯(Xin) 片(Pian) 圈(Quan)芯(Xin)片(Pian)半(Ban)导(Dao)体(Ti)人(Ren)的(De)圈(Quan)子(Zi)！添(Tian) 加(Jia)区(Qu)块(Kuai)链(Lian)首(Shou)席(Xi)区(Qu)块(Kuai)链(Lian)从(Cong)入(Ru)门(Men)到(Dao)精(Jing)通(Tong)。在(Zai)这(Zhe)里(Li)，憋(Bie)大(Da)招(Zhao)！添(Tian) 加(Jia)1芯(Xin) 局(Ju)读(Du)懂(Dong)半(Ban)导(Dao)体(Ti)，看(Kan)懂(Dong)芯(Xin)片(Pian)！添(Tian) 加(Jia)1个(Ge)赞(Zan)，工(Gong)资(Zi)老(Lao)板(Ban)加(Jia)1元(Yuan)
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