“黄鳝门”女主播被捕!10大女星做直播,谁最污冲手机搜狐网
4月29日，叁一重能披露的2022年年报及2023年一季报显示，公司2023年一季度实现营收15.64亿元，同比下滑23.66%；实现归母净利润4.82亿元，同比下滑19.15%。2022年实现营收123.25亿元，较上年同期增长20.89%；实现净利润16.48亿元，较上年同期增长2.78%。
2025年01月14日，观相貌眉眼，这位邻居大姐是个活泛人，像我这种不擅长跟陌生的人打交道的人，这大姐都能跟我热情的有话题讨论。
“黄鳝门”女主播被捕!10大女星做直播,谁最污冲手机搜狐网
《百鸟朝凤》制作人刘夏表示这部剧相较于传统表演剧目更具有小剧场互动体验感强沉浸式感官体验的特性：我们在剧场中专门设计了一个‘凤凰席’每场仅有1个拥有独享的视角和惊喜互动
有时候你的外卖迟到是有原因的，哈哈哈然而，10万公里后，涡轮增压车型在油耗上的劣势逐渐显现，加上对高品质燃油的需求，使得长期用车成本有所增加。不过，对于涡轮增压发动机的可靠性争议，随着技术的进步已不再是个大问题。如今，无论是德系还是日系，车辆的叁大件都相当可靠，故障率的高低更多体现在电子系统而非机械部件上。
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此(颁颈)外(奥补颈)，由(驰辞耻)于(驰耻)公(骋辞苍驳)积(闯颈)金(闯颈苍)贷(顿补颈)款(碍耻补苍)额(贰)度(顿耻)有(驰辞耻)限(齿颈补苍)，在(窜补颈)推(罢耻颈)行(齿颈苍驳)“商(厂丑补苍驳)转(窜丑耻补苍)公(骋辞苍驳)”的(顿别)地(顿颈)区(蚕耻)，该(骋补颈)业(驰别)务(奥耻)惠(贬耻颈)及(闯颈)人(搁别苍)群(蚕耻苍)或(贬耻辞)相(齿颈补苍驳)对(顿耻颈)有(驰辞耻)限(齿颈补苍)。
肠辞苍驳锄丑别测颈迟颈补苍办补颈蝉丑颈，飞辞产颈补苍肠丑别苍驳濒颈补辞尘耻辩颈苍24虫颈补辞蝉丑颈诲别迟颈别蝉丑别苍辫别颈丑耻，蝉丑颈尘别蝉丑颈丑别测耻补苍蹿补苍驳锄补颈测别丑别飞辞尘别颈测辞耻箩颈补辞箩颈。蝉丑别苍濒颈驳耻辞肠丑别苍驳锄丑辞苍驳，蹿补测耻补苍谤别苍飞别颈蝉丑颈诲别测颈蝉丑颈飞耻，测颈苍驳诲补苍驳蹿补苍丑耻补苍辩耻补苍濒颈谤别苍。蝉丑颈诲别谤别苍测颈苍驳诲补苍驳箩颈蝉丑颈迟辞苍驳锄丑颈辩耻补苍濒颈谤别苍濒颈苍驳辩耻，丑耻辞锄丑别蝉辞苍驳箩颈补辞驳辞苍驳补苍诲别苍驳测辞耻驳耻补苍产耻尘别苍。蝉丑颈诲别谤别苍锄补颈测颈蝉丑颈飞耻蝉辞苍驳箩颈补辞测辞耻驳耻补苍产耻尘别苍辩颈补苍，测辞耻驳耻补苍产耻尘别苍锄补颈测颈蝉丑颈飞耻产别颈濒颈苍驳辩耻辩颈补苍，测颈苍驳诲补苍驳迟耻辞蝉丑补苍产补辞驳耻补苍测颈蝉丑颈飞耻。测颈苍驳耻测颈丑耻辞锄丑别锄丑辞苍驳诲补驳耻辞蝉丑颈锄丑颈蝉丑颈测颈蝉丑颈飞耻丑耻颈蝉耻苍、尘颈别蝉丑颈诲别，测颈苍驳诲补苍驳肠丑别苍驳诲补苍尘颈苍蝉丑颈锄别谤别苍。产别苍补苍锄丑辞苍驳，诲别苍驳尘辞耻蝉丑颈诲别蝉丑别蝉耻蝉丑辞耻箩颈丑辞耻，测颈苍驳诲补苍驳迟耻辞蝉丑补苍产补辞驳耻补苍测颈蝉丑颈飞耻，产颈苍驳测颈苍驳蝉耻辞测辞耻辩耻补苍谤别苍锄丑颈测补辞辩颈耻蹿补苍丑耻补苍蝉丑颈诲别测颈蝉丑颈飞耻。虫颈补苍诲别苍驳尘辞耻箩耻箩耻别蹿补苍丑耻补苍测颈蝉丑颈飞耻，产颈苍驳肠丑别苍驳测颈箩颈苍驳箩颈补苍驳测颈蝉丑颈飞耻诲颈耻蝉丑颈，驳补颈虫颈苍驳飞别颈测颈箩颈苍驳蝉耻苍丑补颈濒颈补辞肠丑别苍尘辞耻诲别丑别蹿补辩耻补苍测颈，辩颈别诲别苍驳尘辞耻测补辞辩颈耻肠丑别苍尘辞耻肠辞苍驳蝉丑颈锄耻辞虫颈补苍肠丑别苍驳蹿补苍驳丑耻辞辫补辞锄丑颈辩颈箩颈补锄丑辞苍驳肠补颈测耻补苍测颈蹿补苍丑耻补苍蝉丑辞耻箩颈诲别测颈箩颈补苍，测补苍锄丑辞苍驳飞别颈产别颈驳辞苍驳虫耻濒颈补苍驳蝉耻。锄耻颈锄丑辞苍驳，蹿补测耻补苍测颈蹿补辫补苍箩耻别诲别苍驳尘辞耻辫别颈肠丑补苍驳肠丑别苍尘辞耻箩颈苍驳箩颈蝉耻苍蝉丑颈8500测耻补苍。
收(Shou)藏(Cang)｜半(Ban)导(Dao)体(Ti)一(Yi)些(Xie)术(Shu)语(Yu)的(De)中(Zhong)英(Ying)文(Wen)对(Dui)照(Zhao)2018-12-03 04:20·芯(Xin)榜(Bang)芯(Xin) 片(Pian) 圈(Quan)芯(Xin)片(Pian)半(Ban)导(Dao)体(Ti)人(Ren)的(De)圈(Quan)子(Zi)！100000+关(Guan)注(Zhu)精(Jing)彩(Cai)推(Tui)荐(Jian)来(Lai)源(Yuan)：ittbank常(Chang)用(Yong)半(Ban)导(Dao)体(Ti)中(Zhong)英(Ying)对(Dui)照(Zhao)表(Biao)常(Chang)用(Yong)的(De)离(Li)子(Zi)注(Zhu)入(Ru)机(Ji)：ion implanterLSS理(Li)论(Lun)：Lindhand Scharff and Schiott theory，又(You)称(Cheng)“林(Lin)汉(Han)德(De)-斯(Si)卡(Ka)夫(Fu)-斯(Si)高(Gao)特(Te)理(Li)论(Lun)”。沟(Gou)道(Dao)效(Xiao)应(Ying)：channeling effect射(She)程(Cheng)分(Fen)布(Bu)：range distribution深(Shen)度(Du)分(Fen)布(Bu)：depth distribution投(Tou)影(Ying)射(She)程(Cheng)：projected range阻(Zu)止(Zhi)距(Ju)离(Li)：stopping distance阻(Zu)止(Zhi)本(Ben)领(Ling)：stopping power标(Biao)准(Zhun)阻(Zu)止(Zhi)截(Jie)面(Mian)：standard stopping cross section退(Tui)火(Huo)：annealing激(Ji)活(Huo)能(Neng)：activation energy等(Deng)温(Wen)退(Tui)火(Huo)：isothermal annealing激(Ji)光(Guang)退(Tui)火(Huo)：laser annealing应(Ying)力(Li)感(Gan)生(Sheng)缺(Que)陷(Xian)：stress-induced defect择(Ze)优(You)取(Qu)向(Xiang)：preferred orientation制(Zhi)版(Ban)工(Gong)艺(Yi)：mask-making technology图(Tu)形(Xing)畸(Ji)变(Bian)：pattern distortion初(Chu)缩(Suo)：first minification精(Jing)缩(Suo)：final minification母(Mu)版(Ban)：master mask铬(Ge)版(Ban)：chromium plate干(Gan)版(Ban)：dry plate乳(Ru)胶(Jiao)版(Ban)：emulsion plate透(Tou)明(Ming)版(Ban)：see-through plate高(Gao)分(Fen)辨(Bian)率(Lv)版(Ban)：high resolution plate, HRP超(Chao)微(Wei)粒(Li)干(Gan)版(Ban)：plate forultra-microminiaturization掩(Yan)模(Mo)：mask掩(Yan)模(Mo)对(Dui)准(Zhun)：mask alignment对(Dui)准(Zhun)精(Jing)度(Du)：alignment precision光(Guang)刻(Ke)胶(Jiao)：photoresist，又(You)称(Cheng)“光(Guang)致(Zhi)抗(Kang)蚀(Shi)剂(Ji)”。负(Fu)性(Xing)光(Guang)刻(Ke)胶(Jiao)：negative photoresist正(Zheng)性(Xing)光(Guang)刻(Ke)胶(Jiao)：positive photoresist无(Wu)机(Ji)光(Guang)刻(Ke)胶(Jiao)：inorganic resist多(Duo)层(Ceng)光(Guang)刻(Ke)胶(Jiao)：multilevel resist电(Dian)子(Zi)束(Shu)光(Guang)刻(Ke)胶(Jiao)：electron beam resistX射(She)线(Xian)光(Guang)刻(Ke)胶(Jiao)：X-ray resist刷(Shua)洗(Xi)：scrubbing甩(Shuai)胶(Jiao)：spinning涂(Tu)胶(Jiao)：photoresist coating后(Hou)烘(Hong)：postbaking光(Guang)刻(Ke)：photolithographyX射(She)线(Xian)光(Guang)刻(Ke)：X-ray lithography电(Dian)子(Zi)束(Shu)光(Guang)刻(Ke)：electron beam lithography离(Li)子(Zi)束(Shu)光(Guang)刻(Ke)：ion beam lithography深(Shen)紫(Zi)外(Wai)光(Guang)刻(Ke)：deep-UV lithography光(Guang)刻(Ke)机(Ji)：mask aligner投(Tou)影(Ying)光(Guang)刻(Ke)机(Ji)：projection mask aligner曝(Pu)光(Guang)：exposure接(Jie)触(Chu)式(Shi)曝(Pu)光(Guang)法(Fa)：contact exposure method接(Jie)近(Jin)式(Shi)曝(Pu)光(Guang)法(Fa)：proximity exposure method光(Guang)学(Xue)投(Tou)影(Ying)曝(Pu)光(Guang)法(Fa)：optical projection exposure method电(Dian)子(Zi)束(Shu)曝(Pu)光(Guang)系(Xi)统(Tong)：electron beam exposure system分(Fen)步(Bu)重(Zhong)复(Fu)系(Xi)统(Tong)：step-and-repeat system显(Xian)影(Ying)：development线(Xian)宽(Kuan)：linewidth去(Qu)胶(Jiao)：stripping of photoresist氧(Yang)化(Hua)去(Qu)胶(Jiao)：removing of photoresist by oxidation等(Deng)离(Li)子(Zi)［体(Ti)］去(Qu)胶(Jiao)：removing of photoresist by plasma刻(Ke)蚀(Shi)：etching干(Gan)法(Fa)刻(Ke)蚀(Shi)：dry etching反(Fan)应(Ying)离(Li)子(Zi)刻(Ke)蚀(Shi)：reactive ion etching,：RIE各(Ge)向(Xiang)同(Tong)性(Xing)刻(Ke)蚀(Shi)：isotropic etching各(Ge)向(Xiang)异(Yi)性(Xing)刻(Ke)蚀(Shi)：anisotropic etching反(Fan)应(Ying)溅(Jian)射(She)刻(Ke)蚀(Shi)：reactive sputter etching离(Li)子(Zi)铣(Xi)：ion beam milling，又(You)称(Cheng)“离(Li)子(Zi)磨(Mo)削(Xiao)”。等(Deng)离(Li)子(Zi)［体(Ti)］刻(Ke)蚀(Shi)：plasma etching钻(Zuan)蚀(Shi)：undercutting剥(Bao)离(Li)技(Ji)术(Shu)：lift-off technology，又(You)称(Cheng)“浮(Fu)脱(Tuo)工(Gong)艺(Yi)”。终(Zhong)点(Dian)监(Jian)测(Ce)：endpoint monitoring金(Jin)属(Shu)化(Hua)：metallization互(Hu)连(Lian)：interconnection多(Duo)层(Ceng)金(Jin)属(Shu)化(Hua)：multilevel metallization电(Dian)迁(Qian)徙(Zuo)：electromigration回(Hui)流(Liu)：reflow磷(Lin)硅(Gui)玻(Bo)璃(Li)：phosphorosilicate glass硼(Peng)磷(Lin)硅(Gui)玻(Bo)璃(Li)：boron-phosphorosilicate glass钝(Dun)化(Hua)工(Gong)艺(Yi)：passivation technology多(Duo)层(Ceng)介(Jie)质(Zhi)钝(Dun)化(Hua)：multilayer dielectric passivation划(Hua)片(Pian)：scribing电(Dian)子(Zi)束(Shu)切(Qie)片(Pian)：electron beam slicing烧(Shao)结(Jie)：sintering印(Yin)压(Ya)：indentation热(Re)压(Ya)焊(Han)：thermocompression bonding热(Re)超(Chao)声(Sheng)焊(Han)：thermosonic bonding冷(Leng)焊(Han)：cold welding点(Dian)焊(Han)：spot welding球(Qiu)焊(Han)：ball bonding楔(Xie)焊(Han)：wedge bonding内(Nei)引(Yin)线(Xian)焊(Han)接(Jie)：inner lead bonding外(Wai)引(Yin)线(Xian)焊(Han)接(Jie)：outer lead bonding梁(Liang)式(Shi)引(Yin)线(Xian)：beam lead装(Zhuang)架(Jia)工(Gong)艺(Yi)：mounting technology附(Fu)着(Zhuo)：adhesion封(Feng)装(Zhuang)：packaging金(Jin)属(Shu)封(Feng)装(Zhuang)：metallic packaging陶(Tao)瓷(Ci)封(Feng)装(Zhuang)：ceramic packaging扁(Bian)平(Ping)封(Feng)装(Zhuang)：flat packaging塑(Su)封(Feng)：plastic package玻(Bo)璃(Li)封(Feng)装(Zhuang)：glass packaging微(Wei)封(Feng)装(Zhuang)：micropackaging，又(You)称(Cheng)“微(Wei)组(Zu)装(Zhuang)”。管(Guan)壳(Ke)：package管(Guan)芯(Xin)：die引(Yin)线(Xian)键(Jian)合(He)：lead bonding引(Yin)线(Xian)框(Kuang)式(Shi)键(Jian)合(He)：lead frame bonding带(Dai)式(Shi)自(Zi)动(Dong)键(Jian)合(He)：tape automated bonding, TAB激(Ji)光(Guang)键(Jian)合(He)：laser bonding超(Chao)声(Sheng)键(Jian)合(He)：ultrasonic bonding红(Hong)外(Wai)键(Jian)合(He)：infrared bonding微(Wei)电(Dian)子(Zi)辞(Ci)典(Dian)大(Da)集(Ji)合(He)（按(An)首(Shou)字(Zi)母(Mu)顺(Shun)序(Xu)排(Pai)序(Xu)）AAbrupt junction 突(Tu)变(Bian)结(Jie)Accelerated testing 加(Jia)速(Su)实(Shi)验(Yan)Acceptor 受(Shou)主(Zhu)Acceptor atom 受(Shou)主(Zhu)原(Yuan)子(Zi)Accumulation 积(Ji)累(Lei)、堆(Dui)积(Ji)Accumulating contact 积(Ji)累(Lei)接(Jie)触(Chu)Accumulation region 积(Ji)累(Lei)区(Qu)Accumulation layer 积(Ji)累(Lei)层(Ceng)Active region 有(You)源(Yuan)区(Qu)Active component 有(You)源(Yuan)元(Yuan)Active device 有(You)源(Yuan)器(Qi)件(Jian)Activation 激(Ji)活(Huo)Activation energy 激(Ji)活(Huo)能(Neng)Active region 有(You)源(Yuan)（放(Fang)大(Da)）区(Qu)Admittance 导(Dao)纳(Na)Allowed band 允(Yun)带(Dai)Alloy-junction device合(He)金(Jin)结(Jie)器(Qi)件(Jian) Aluminum(Aluminium) 铝(Lv)Aluminum – oxide 铝(Lv)氧(Yang)化(Hua)物(Wu)Aluminum passivation 铝(Lv)钝(Dun)化(Hua)Ambipolar 双(Shuang)极(Ji)的(De)Ambient temperature 环(Huan)境(Jing)温(Wen)度(Du)Amorphous 无(Wu)定(Ding)形(Xing)的(De)，非(Fei)晶(Jing)体(Ti)的(De)Amplifier 功(Gong)放(Fang) 扩(Kuo)音(Yin)器(Qi) 放(Fang)大(Da)器(Qi)Analogue(Analog) comparator 模(Mo)拟(Ni)比(Bi)较(Jiao)器(Qi) Angstrom 埃(Ai)Anneal 退(Tui)火(Huo)Anisotropic 各(Ge)向(Xiang)异(Yi)性(Xing)的(De)Anode 阳(Yang)极(Ji)Arsenic (AS) 砷(Shen)Auger 俄(E)歇(Xie)Auger process 俄(E)歇(Xie)过(Guo)程(Cheng)Avalanche 雪(Xue)崩(Beng)Avalanche breakdown 雪(Xue)崩(Beng)击(Ji)穿(Chuan)Avalanche excitation雪(Xue)崩(Beng)激(Ji)发(Fa)BBackground carrier 本(Ben)底(Di)载(Zai)流(Liu)子(Zi)Background doping 本(Ben)底(Di)掺(Chan)杂(Za)Backward 反(Fan)向(Xiang)Backward bias 反(Fan)向(Xiang)偏(Pian)置(Zhi)Ballasting resistor 整(Zheng)流(Liu)电(Dian)阻(Zu)Ball bond 球(Qiu)形(Xing)键(Jian)合(He)Band gap 能(Neng)带(Dai)间(Jian)隙(Xi)Barrier 势(Shi)垒(Lei)Barrier layer 势(Shi)垒(Lei)层(Ceng)Barrier width 势(Shi)垒(Lei)宽(Kuan)度(Du)Base 基(Ji)极(Ji)Base contact 基(Ji)区(Qu)接(Jie)触(Chu)Base stretching 基(Ji)区(Qu)扩(Kuo)展(Zhan)效(Xiao)应(Ying)Base transit time 基(Ji)区(Qu)渡(Du)越(Yue)时(Shi)间(Jian)Base transport efficiency基(Ji)区(Qu)输(Shu)运(Yun)系(Xi)数(Shu)Base-width modulation基(Ji)区(Qu)宽(Kuan)度(Du)调(Diao)制(Zhi)Basis vector 基(Ji)矢(Shi)Bias 偏(Pian)置(Zhi)Bilateral switch 双(Shuang)向(Xiang)开(Kai)关(Guan)Binary code 二(Er)进(Jin)制(Zhi)代(Dai)码(Ma)Binary compound semiconductor 二(Er)元(Yuan)化(Hua)合(He)物(Wu)半(Ban)导(Dao)体(Ti)Bipolar 双(Shuang)极(Ji)性(Xing)的(De)Bipolar Junction Transistor (BJT)双(Shuang)极(Ji)晶(Jing)体(Ti)管(Guan)Bloch 布(Bu)洛(Luo)赫(He)Blocking band 阻(Zu)挡(Dang)能(Neng)带(Dai)Blocking contact 阻(Zu)挡(Dang)接(Jie)触(Chu)Body - centered 体(Ti)心(Xin)立(Li)方(Fang)Body-centred cubic structure 体(Ti)立(Li)心(Xin)结(Jie)构(Gou)Boltzmann 波(Bo)尔(Er)兹(Zi)曼(Man)Bond 键(Jian)、键(Jian)合(He)Bonding electron 价(Jia)电(Dian)子(Zi)Bonding pad 键(Jian)合(He)点(Dian)Bootstrap circuit 自(Zi)举(Ju)电(Dian)路(Lu)Bootstrapped emitter follower 自(Zi)举(Ju)射(She)极(Ji)跟(Gen)随(Sui)器(Qi)Boron 硼(Peng)Borosilicate glass 硼(Peng)硅(Gui)玻(Bo)璃(Li)Boundary condition 边(Bian)界(Jie)条(Tiao)件(Jian)Bound electron 束(Shu)缚(Fu)电(Dian)子(Zi)Breadboard 模(Mo)拟(Ni)板(Ban)、实(Shi)验(Yan)板(Ban)Break down 击(Ji)穿(Chuan)Break over 转(Zhuan)折(Zhe)Brillouin 布(Bu)里(Li)渊(Yuan)Brillouin zone 布(Bu)里(Li)渊(Yuan)区(Qu)Built-in 内(Nei)建(Jian)的(De)Build-in electric field 内(Nei)建(Jian)电(Dian)场(Chang)Bulk 体(Ti)/体(Ti)内(Nei) Bulk absorption 体(Ti)吸(Xi)收(Shou)Bulk generation 体(Ti)产(Chan)生(Sheng)Bulk recombination 体(Ti)复(Fu)合(He)Burn - in 老(Lao)化(Hua)Burn out 烧(Shao)毁(Hui)Buried channel 埋(Mai)沟(Gou)Buried diffusion region 隐(Yin)埋(Mai)扩(Kuo)散(San)区(Qu)CCan 外(Wai)壳(Ke)Capacitance 电(Dian)容(Rong)Capture cross section 俘(Fu)获(Huo)截(Jie)面(Mian)Capture carrier 俘(Fu)获(Huo)载(Zai)流(Liu)子(Zi)Carrier 载(Zai)流(Liu)子(Zi)、载(Zai)波(Bo)Carry bit 进(Jin)位(Wei)位(Wei)Carry-in bit 进(Jin)位(Wei)输(Shu)入(Ru)Carry-out bit 进(Jin)位(Wei)输(Shu)出(Chu)Cascade 级(Ji)联(Lian)Case 管(Guan)壳(Ke)Cathode 阴(Yin)极(Ji)Center 中(Zhong)心(Xin)Ceramic 陶(Tao)瓷(Ci)（的(De)）Channel 沟(Gou)道(Dao)Channel breakdown 沟(Gou)道(Dao)击(Ji)穿(Chuan)Channel current 沟(Gou)道(Dao)电(Dian)流(Liu)Channel doping 沟(Gou)道(Dao)掺(Chan)杂(Za)Channel shortening 沟(Gou)道(Dao)缩(Suo)短(Duan)Channel width 沟(Gou)道(Dao)宽(Kuan)度(Du)Characteristic impedance 特(Te)征(Zheng)阻(Zu)抗(Kang)Charge 电(Dian)荷(He)、充(Chong)电(Dian)Charge-compensation effects 电(Dian)荷(He)补(Bu)偿(Chang)效(Xiao)应(Ying)Charge conservation 电(Dian)荷(He)守(Shou)恒(Heng)Charge neutrality condition 电(Dian)中(Zhong)性(Xing)条(Tiao)件(Jian)Chargedrive/exchange/sharing/transfer/storage 电(Dian)荷(He)驱(Qu)动(Dong)/交(Jiao)换(Huan)/共(Gong)享(Xiang)/转(Zhuan)移(Yi)/存(Cun)储(Chu)Chemmical etching 化(Hua)学(Xue)腐(Fu)蚀(Shi)法(Fa)Chemically-Polish 化(Hua)学(Xue)抛(Pao)光(Guang)Chemmically-Mechanically Polish (CMP) 化(Hua)学(Xue)机(Ji)械(Xie)抛(Pao)光(Guang) Chip 芯(Xin)片(Pian)Chip yield 芯(Xin)片(Pian)成(Cheng)品(Pin)率(Lv)Clamped 箝(Zuo)位(Wei)Clamping diode 箝(Zuo)位(Wei)二(Er)极(Ji)管(Guan)Cleavage plane 解(Jie)理(Li)面(Mian)Clock rate 时(Shi)钟(Zhong)频(Pin)率(Lv)Clock generator 时(Shi)钟(Zhong)发(Fa)生(Sheng)器(Qi)Clock flip-flop 时(Shi)钟(Zhong)触(Chu)发(Fa)器(Qi)Close-packed structure 密(Mi)堆(Dui)积(Ji)结(Jie)构(Gou)Close-loop gain 闭(Bi)环(Huan)增(Zeng)益(Yi)Collector 集(Ji)电(Dian)极(Ji)Collision 碰(Peng)撞(Zhuang)Compensated OP-AMP 补(Bu)偿(Chang)运(Yun)放(Fang)Common-base/collector/emitter connection 共(Gong)基(Ji)极(Ji)/集(Ji)电(Dian)极(Ji)/发(Fa)射(She)极(Ji)连(Lian)接(Jie)Common-gate/drain/source connection 共(Gong)栅(Zha)/漏(Lou)/源(Yuan)连(Lian)接(Jie)Common-mode gain 共(Gong)模(Mo)增(Zeng)益(Yi)Common-mode input 共(Gong)模(Mo)输(Shu)入(Ru)Common-mode rejection ratio (CMRR) 共(Gong)模(Mo)抑(Yi)制(Zhi)比(Bi)Compatibility 兼(Jian)容(Rong)性(Xing)Compensation 补(Bu)偿(Chang)Compensated impurities 补(Bu)偿(Chang)杂(Za)质(Zhi)Compensated semiconductor 补(Bu)偿(Chang)半(Ban)导(Dao)体(Ti)Complementary Darlington circuit 互(Hu)补(Bu)达(Da)林(Lin)顿(Dun)电(Dian)路(Lu)Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS) 互(Hu)补(Bu)金(Jin)属(Shu)氧(Yang)化(Hua)物(Wu)半(Ban)导(Dao)体(Ti)场(Chang)效(Xiao)应(Ying)晶(Jing)体(Ti)管(Guan)Complementary error function 余(Yu)误(Wu)差(Cha)函(Han)数(Shu)Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 计(Ji)算(Suan)机(Ji)辅(Fu)助(Zhu)设(She)计(Ji)/ 测(Ce)试(Shi) /制(Zhi) 造(Zao)Compound Semiconductor 化(Hua)合(He)物(Wu)半(Ban)导(Dao)体(Ti)Conductance 电(Dian)导(Dao)Conduction band (edge) 导(Dao)带(Dai)(底(Di))Conduction level/state 导(Dao)带(Dai)态(Tai)Conductor 导(Dao)体(Ti)Conductivity 电(Dian)导(Dao)率(Lv)Configuration 组(Zu)态(Tai)Conlomb 库(Ku)仑(Lun)Conpled Configuration Devices 结(Jie)构(Gou)组(Zu)态(Tai)Constants 物(Wu)理(Li)常(Chang)数(Shu)Constant energy surface 等(Deng)能(Neng)面(Mian)Constant-source diffusion恒(Heng)定(Ding)源(Yuan)扩(Kuo)散(San)Contact 接(Jie)触(Chu)Contamination 治(Zhi)污(Wu)Continuity equation 连(Lian)续(Xu)性(Xing)方(Fang)程(Cheng)Contact hole 接(Jie)触(Chu)孔(Kong)Contact potential 接(Jie)触(Chu)电(Dian)势(Shi)Continuity condition 连(Lian)续(Xu)性(Xing)条(Tiao)件(Jian)Contra doping 反(Fan)掺(Chan)杂(Za)Controlled 受(Shou)控(Kong)的(De)Converter 转(Zhuan)换(Huan)器(Qi)Conveyer 传(Chuan)输(Shu)器(Qi)Copper interconnection system 铜(Tong)互(Hu)连(Lian)系(Xi)统(Tong)Couping 耦(Zuo)合(He)Covalent 共(Gong)阶(Jie)的(De)Crossover 跨(Kua)交(Jiao)Critical 临(Lin)界(Jie)的(De)Crossunder 穿(Chuan)交(Jiao)Crucible坩(Zuo)埚(Zuo)Crystaldefect/face/orientation/lattice 晶(Jing)体(Ti)缺(Que)陷(Xian)/晶(Jing)面(Mian)/晶(Jing)向(Xiang)/晶(Jing)格(Ge)Current density 电(Dian)流(Liu)密(Mi)度(Du)Curvature 曲(Qu)率(Lv)Cut off 截(Jie)止(Zhi)Current drift/dirve/sharing 电(Dian)流(Liu)漂(Piao)移(Yi)/驱(Qu)动(Dong)/共(Gong)享(Xiang)Current Sense 电(Dian)流(Liu)取(Qu)样(Yang)Curvature 弯(Wan)曲(Qu)Custom integrated circuit 定(Ding)制(Zhi)集(Ji)成(Cheng)电(Dian)路(Lu)Cylindrical 柱(Zhu)面(Mian)的(De)Czochralshicrystal 直(Zhi)立(Li)单(Dan)晶(Jing)Czochralski technique 切(Qie)克(Ke)劳(Lao)斯(Si)基(Ji)技(Ji)术(Shu)（Cz法(Fa)直(Zhi)拉(La)晶(Jing)体(Ti)J）DDangling bonds 悬(Xuan)挂(Gua)键(Jian)Dark current 暗(An)电(Dian)流(Liu)Dead time 空(Kong)载(Zai)时(Shi)间(Jian)Debye length 德(De)拜(Bai)长(Chang)度(Du)De.broglie 德(De)布(Bu)洛(Luo)意(Yi)Decderate 减(Jian)速(Su)Decibel (dB) 分(Fen)贝(Bei)Decode 译(Yi)码(Ma)Deep acceptor level 深(Shen)受(Shou)主(Zhu)能(Neng)级(Ji)Deep donor level 深(Shen)施(Shi)主(Zhu)能(Neng)级(Ji)Deep impurity level 深(Shen)度(Du)杂(Za)质(Zhi)能(Neng)级(Ji)Deep trap 深(Shen)陷(Xian)阱(Zuo)Defeat 缺(Que)陷(Xian)Degenerate semiconductor 简(Jian)并(Bing)半(Ban)导(Dao)体(Ti)Degeneracy 简(Jian)并(Bing)度(Du)Degradation 退(Tui)化(Hua)Degree Celsius(centigrade) /Kelvin 摄(She)氏(Shi)/开(Kai)氏(Shi)温(Wen)度(Du)Delay 延(Yan)迟(Chi) Density 密(Mi)度(Du)Density of states 态(Tai)密(Mi)度(Du)Depletion 耗(Hao)尽(Jin)Depletion approximation 耗(Hao)尽(Jin)近(Jin)似(Si)Depletion contact 耗(Hao)尽(Jin)接(Jie)触(Chu)Depletion depth 耗(Hao)尽(Jin)深(Shen)度(Du)Depletion effect 耗(Hao)尽(Jin)效(Xiao)应(Ying)Depletion layer 耗(Hao)尽(Jin)层(Ceng)Depletion MOS 耗(Hao)尽(Jin)MOSDepletion region 耗(Hao)尽(Jin)区(Qu)Deposited film 淀(Dian)积(Ji)薄(Bao)膜(Mo)Deposition process 淀(Dian)积(Ji)工(Gong)艺(Yi)Design rules 设(She)计(Ji)规(Gui)则(Ze)Die 芯(Xin)片(Pian)（复(Fu)数(Shu)dice）Diode 二(Er)极(Ji)管(Guan)Dielectric 介(Jie)电(Dian)的(De)Dielectric isolation 介(Jie)质(Zhi)隔(Ge)离(Li)Difference-mode input 差(Cha)模(Mo)输(Shu)入(Ru)Differential amplifier 差(Cha)分(Fen)放(Fang)大(Da)器(Qi)Differential capacitance 微(Wei)分(Fen)电(Dian)容(Rong)Diffused junction 扩(Kuo)散(San)结(Jie)Diffusion 扩(Kuo)散(San)Diffusion coefficient 扩(Kuo)散(San)系(Xi)数(Shu)Diffusion constant 扩(Kuo)散(San)常(Chang)数(Shu)Diffusivity 扩(Kuo)散(San)率(Lv)Diffusioncapacitance/barrier/current/furnace 扩(Kuo)散(San)电(Dian)容(Rong)/势(Shi)垒(Lei)/电(Dian)流(Liu)/炉(Lu)Digital circuit 数(Shu)字(Zi)电(Dian)路(Lu)Dipole domain 偶(Ou)极(Ji)畴(Chou)Dipole layer 偶(Ou)极(Ji)层(Ceng)Direct-coupling 直(Zhi)接(Jie)耦(Zuo)合(He)Direct-gap semiconductor 直(Zhi)接(Jie)带(Dai)隙(Xi)半(Ban)导(Dao)体(Ti)Direct transition 直(Zhi)接(Jie)跃(Yue)迁(Qian)Discharge 放(Fang)电(Dian)Discrete component 分(Fen)立(Li)元(Yuan)件(Jian)Dissipation 耗(Hao)散(San)Distribution 分(Fen)布(Bu)Distributed capacitance 分(Fen)布(Bu)电(Dian)容(Rong)Distributed model 分(Fen)布(Bu)模(Mo)型(Xing)Displacement 位(Wei)移(Yi) Dislocation 位(Wei)错(Cuo)Domain 畴(Chou) Donor 施(Shi)主(Zhu)Donor exhaustion 施(Shi)主(Zhu)耗(Hao)尽(Jin)Dopant 掺(Chan)杂(Za)剂(Ji)Doped semiconductor 掺(Chan)杂(Za)半(Ban)导(Dao)体(Ti)Doping concentration 掺(Chan)杂(Za)浓(Nong)度(Du)Double-diffusive MOS(DMOS)双(Shuang)扩(Kuo)散(San)MOS.Drift 漂(Piao)移(Yi) Drift field 漂(Piao)移(Yi)电(Dian)场(Chang)Drift mobility 迁(Qian)移(Yi)率(Lv)Dry etching 干(Gan)法(Fa)腐(Fu)蚀(Shi)Dry/wet oxidation 干(Gan)/湿(Shi)法(Fa)氧(Yang)化(Hua)Dose 剂(Ji)量(Liang)Duty cycle 工(Gong)作(Zuo)周(Zhou)期(Qi)Dual-in-line package （DIP） 双(Shuang)列(Lie)直(Zhi)插(Cha)式(Shi)封(Feng)装(Zhuang)Dynamics 动(Dong)态(Tai)Dynamic characteristics 动(Dong)态(Tai)属(Shu)性(Xing)Dynamic impedance 动(Dong)态(Tai)阻(Zu)抗(Kang)EEarly effect 厄(E)利(Li)效(Xiao)应(Ying)Early failure 早(Zao)期(Qi)失(Shi)效(Xiao)Effective mass 有(You)效(Xiao)质(Zhi)量(Liang)Einstein relation(ship) 爱(Ai)因(Yin)斯(Si)坦(Tan)关(Guan)系(Xi)Electric Erase Programmable Read Only Memory(E2PROM) 一(Yi)次(Ci)性(Xing)电(Dian)可(Ke)擦(Ba)除(Chu)只(Zhi)读(Du)存(Cun)储(Chu)器(Qi)Electrode 电(Dian)极(Ji)Electrominggratim 电(Dian)迁(Qian)移(Yi)Electron affinity 电(Dian)子(Zi)亲(Qin)和(He)势(Shi)Electronic -grade 电(Dian)子(Zi)能(Neng)Electron-beam photo-resist exposure 光(Guang)致(Zhi)抗(Kang)蚀(Shi)剂(Ji)的(De)电(Dian)子(Zi)束(Shu)曝(Pu)光(Guang)Electron gas 电(Dian)子(Zi)气(Qi)Electron-grade water 电(Dian)子(Zi)级(Ji)纯(Chun)水(Shui)Electron trapping center 电(Dian)子(Zi)俘(Fu)获(Huo)中(Zhong)心(Xin)Electron Volt (eV) 电(Dian)子(Zi)伏(Fu)Electrostatic 静(Jing)电(Dian)的(De)Element 元(Yuan)素(Su)/元(Yuan)件(Jian)/配(Pei)件(Jian)Elemental semiconductor 元(Yuan)素(Su)半(Ban)导(Dao)体(Ti)Ellipse 椭(Tuo)圆(Yuan)Ellipsoid 椭(Tuo)球(Qiu)Emitter 发(Fa)射(She)极(Ji)Emitter-coupled logic 发(Fa)射(She)极(Ji)耦(Zuo)合(He)逻(Luo)辑(Ji)Emitter-coupled pair 发(Fa)射(She)极(Ji)耦(Zuo)合(He)对(Dui)Emitter follower 射(She)随(Sui)器(Qi)Empty band 空(Kong)带(Dai)Emitter crowding effect 发(Fa)射(She)极(Ji)集(Ji)边(Bian)（拥(Yong)挤(Ji)）效(Xiao)应(Ying)Endurance test =life test 寿(Shou)命(Ming)测(Ce)试(Shi)Energy state 能(Neng)态(Tai)Energy momentum diagram 能(Neng)量(Liang)-动(Dong)量(Liang)(E-K)图(Tu)Enhancement mode 增(Zeng)强(Qiang)型(Xing)模(Mo)式(Shi)Enhancement MOS 增(Zeng)强(Qiang)性(Xing)MOS Entefic (低(Di))共(Gong)溶(Rong)的(De)Environmental test 环(Huan)境(Jing)测(Ce)试(Shi)Epitaxial 外(Wai)延(Yan)的(De)Epitaxial layer 外(Wai)延(Yan)层(Ceng)Epitaxial slice 外(Wai)延(Yan)片(Pian)Expitaxy 外(Wai)延(Yan)Equivalent curcuit 等(Deng)效(Xiao)电(Dian)路(Lu)Equilibrium majority /minority carriers 平(Ping)衡(Heng)多(Duo)数(Shu)/少(Shao)数(Shu)载(Zai)流(Liu)子(Zi)Erasable Programmable ROM (EPROM)可(Ke)搽(Cha)取(Qu)（编(Bian)程(Cheng)）存(Cun)储(Chu)器(Qi)Error function complement 余(Yu)误(Wu)差(Cha)函(Han)数(Shu)Etch 刻(Ke)蚀(Shi)Etchant 刻(Ke)蚀(Shi)剂(Ji)Etching mask 抗(Kang)蚀(Shi)剂(Ji)掩(Yan)模(Mo)Excess carrier 过(Guo)剩(Sheng)载(Zai)流(Liu)子(Zi)Excitation energy 激(Ji)发(Fa)能(Neng)Excited state 激(Ji)发(Fa)态(Tai)Exciton 激(Ji)子(Zi)Extrapolation 外(Wai)推(Tui)法(Fa)Extrinsic 非(Fei)本(Ben)征(Zheng)的(De)Extrinsic semiconductor 杂(Za)质(Zhi)半(Ban)导(Dao)体(Ti)FFace - centered 面(Mian)心(Xin)立(Li)方(Fang)Fall time 下(Xia)降(Jiang)时(Shi)间(Jian)Fan-in 扇(Shan)入(Ru)Fan-out 扇(Shan)出(Chu)Fast recovery 快(Kuai)恢(Hui)复(Fu)Fast surface states 快(Kuai)界(Jie)面(Mian)态(Tai)Feedback 反(Fan)馈(Kui)Fermi level 费(Fei)米(Mi)能(Neng)级(Ji)Fermi-Dirac Distribution 费(Fei)米(Mi)-狄(Di)拉(La)克(Ke)分(Fen)布(Bu)Femi potential 费(Fei)米(Mi)势(Shi)Fick equation 菲(Fei)克(Ke)方(Fang)程(Cheng)（扩(Kuo)散(San)）Field effect transistor 场(Chang)效(Xiao)应(Ying)晶(Jing)体(Ti)管(Guan)Field oxide 场(Chang)氧(Yang)化(Hua)层(Ceng)Filled band 满(Man)带(Dai)Film 薄(Bao)膜(Mo)Flash memory 闪(Shan)烁(Shuo)存(Cun)储(Chu)器(Qi)Flat band 平(Ping)带(Dai)Flat pack 扁(Bian)平(Ping)封(Feng)装(Zhuang)Flicker noise 闪(Shan)烁(Shuo)（变(Bian)）噪(Zao)声(Sheng)Flip-flop toggle 触(Chu)发(Fa)器(Qi)翻(Fan)转(Zhuan)Floating gate 浮(Fu)栅(Zha)Fluoride etch 氟(Fu)化(Hua)氢(Qing)刻(Ke)蚀(Shi)Forbidden band 禁(Jin)带(Dai)Forward bias 正(Zheng)向(Xiang)偏(Pian)置(Zhi)Forward blocking /conducting正(Zheng)向(Xiang)阻(Zu)断(Duan)/导(Dao)通(Tong)Frequency deviation noise频(Pin)率(Lv)漂(Piao)移(Yi)噪(Zao)声(Sheng)Frequency response 频(Pin)率(Lv)响(Xiang)应(Ying)Function 函(Han)数(Shu)GGain 增(Zeng)益(Yi) Gallium-Arsenide(GaAs) 砷(Shen)化(Hua)钾(Jia)Gamy ray r 射(She)线(Xian)Gate 门(Men)、栅(Zha)、控(Kong)制(Zhi)极(Ji)Gate oxide 栅(Zha)氧(Yang)化(Hua)层(Ceng)Gauss（ian） 高(Gao)斯(Si)Gaussian distribution profile 高(Gao)斯(Si)掺(Chan)杂(Za)分(Fen)布(Bu)Generation-recombination 产(Chan)生(Sheng)-复(Fu)合(He)Geometries 几(Ji)何(He)尺(Chi)寸(Cun)Germanium(Ge) 锗(Zhe)Graded 缓(Huan)变(Bian)的(De)Graded (gradual) channel 缓(Huan)变(Bian)沟(Gou)道(Dao)Graded junction 缓(Huan)变(Bian)结(Jie)Grain 晶(Jing)粒(Li)Gradient 梯(Ti)度(Du)Grown junction 生(Sheng)长(Chang)结(Jie)Guard ring 保(Bao)护(Hu)环(Huan)Gummel-Poom model 葛(Ge)谋(Mou)-潘(Pan) 模(Mo)型(Xing)Gunn - effect 狄(Di)氏(Shi)效(Xiao)应(Ying)HHardened device 辐(Fu)射(She)加(Jia)固(Gu)器(Qi)件(Jian)Heat of formation 形(Xing)成(Cheng)热(Re)Heat sink 散(San)热(Re)器(Qi)、热(Re)沉(Chen)Heavy/light hole band 重(Zhong)/轻(Qing) 空(Kong)穴(Xue)带(Dai)Heavy saturation 重(Zhong)掺(Chan)杂(Za)Hell - effect 霍(Huo)尔(Er)效(Xiao)应(Ying)Heterojunction 异(Yi)质(Zhi)结(Jie)Heterojunction structure 异(Yi)质(Zhi)结(Jie)结(Jie)构(Gou)Heterojunction Bipolar Transistor（HBT）异(Yi)质(Zhi)结(Jie)双(Shuang)极(Ji)型(Xing)晶(Jing)体(Ti)High field property 高(Gao)场(Chang)特(Te)性(Xing)High-performance MOS.( H-MOS)高(Gao)性(Xing)能(Neng)MOS. Hormalized 归(Gui)一(Yi)化(Hua)Horizontal epitaxial reactor 卧(Wo)式(Shi)外(Wai)延(Yan)反(Fan)应(Ying)器(Qi)Hot carrior 热(Re)载(Zai)流(Liu)子(Zi)Hybrid integration 混(Hun)合(He)集(Ji)成(Cheng)IImage - force 镜(Jing)象(Xiang)力(Li)Impact ionization 碰(Peng)撞(Zhuang)电(Dian)离(Li)Impedance 阻(Zu)抗(Kang)Imperfect structure 不(Bu)完(Wan)整(Zheng)结(Jie)构(Gou)Implantation dose 注(Zhu)入(Ru)剂(Ji)量(Liang)Implanted ion 注(Zhu)入(Ru)离(Li)子(Zi)Impurity 杂(Za)质(Zhi)Impurity scattering 杂(Za)志(Zhi)散(San)射(She)Incremental resistance 电(Dian)阻(Zu)增(Zeng)量(Liang)（微(Wei)分(Fen)电(Dian)阻(Zu)）In-contact mask 接(Jie)触(Chu)式(Shi)掩(Yan)模(Mo)Indium tin oxide (ITO) 铟(Zuo)锡(Xi)氧(Yang)化(Hua)物(Wu)Induced channel 感(Gan)应(Ying)沟(Gou)道(Dao)Infrared 红(Hong)外(Wai)的(De)Injection 注(Zhu)入(Ru)Input offset voltage 输(Shu)入(Ru)失(Shi)调(Diao)电(Dian)压(Ya)Insulator 绝(Jue)缘(Yuan)体(Ti)Insulated Gate FET(IGFET)绝(Jue)缘(Yuan)栅(Zha)FET Integrated injection logic集(Ji)成(Cheng)注(Zhu)入(Ru)逻(Luo)辑(Ji)Integration 集(Ji)成(Cheng)、积(Ji)分(Fen)Interconnection 互(Hu)连(Lian)Interconnection time delay 互(Hu)连(Lian)延(Yan)时(Shi)Interdigitated structure 交(Jiao)互(Hu)式(Shi)结(Jie)构(Gou)Interface 界(Jie)面(Mian)Interference 干(Gan)涉(She)International system of unions国(Guo)际(Ji)单(Dan)位(Wei)制(Zhi)Internally scattering 谷(Gu)间(Jian)散(San)射(She)Interpolation 内(Nei)插(Cha)法(Fa)Intrinsic 本(Ben)征(Zheng)的(De)Intrinsic semiconductor 本(Ben)征(Zheng)半(Ban)导(Dao)体(Ti)Inverse operation 反(Fan)向(Xiang)工(Gong)作(Zuo)Inversion 反(Fan)型(Xing)Inverter 倒(Dao)相(Xiang)器(Qi)Ion 离(Li)子(Zi)Ion beam 离(Li)子(Zi)束(Shu)Ion etching 离(Li)子(Zi)刻(Ke)蚀(Shi)Ion implantation 离(Li)子(Zi)注(Zhu)入(Ru)Ionization 电(Dian)离(Li)Ionization energy 电(Dian)离(Li)能(Neng)Irradiation 辐(Fu)照(Zhao)Isolation land 隔(Ge)离(Li)岛(Dao)Isotropic 各(Ge)向(Xiang)同(Tong)性(Xing)JJunction FET(JFET) 结(Jie)型(Xing)场(Chang)效(Xiao)应(Ying)管(Guan)Junction isolation 结(Jie)隔(Ge)离(Li)Junction spacing 结(Jie)间(Jian)距(Ju)Junction side-wall 结(Jie)侧(Ce)壁(Bi)LLatch up 闭(Bi)锁(Suo)Lateral 横(Heng)向(Xiang)的(De)Lattice 晶(Jing)格(Ge)Layout 版(Ban)图(Tu)Latticebinding/cell/constant/defect/distortion 晶(Jing)格(Ge)结(Jie)合(He)力(Li)/晶(Jing)胞(Bao)/晶(Jing)格(Ge)/晶(Jing)格(Ge)常(Chang)熟(Shu)/晶(Jing)格(Ge)缺(Que)陷(Xian)/晶(Jing)格(Ge)畸(Ji)变(Bian)Leakage current （泄(Xie)）漏(Lou)电(Dian)流(Liu)Level shifting 电(Dian)平(Ping)移(Yi)动(Dong)Life time 寿(Shou)命(Ming)linearity 线(Xian)性(Xing)度(Du)Linked bond 共(Gong)价(Jia)键(Jian)Liquid Nitrogen 液(Ye)氮(Dan)Liquid－phase epitaxial growth technique 液(Ye)相(Xiang)外(Wai)延(Yan)生(Sheng)长(Chang)技(Ji)术(Shu)Lithography 光(Guang)刻(Ke)Light Emitting Diode(LED) 发(Fa)光(Guang)二(Er)极(Ji)管(Guan)Load line or Variable 负(Fu)载(Zai)线(Xian)Locating and Wiring 布(Bu)局(Ju)布(Bu)线(Xian)Longitudinal 纵(Zong)向(Xiang)的(De)Logic swing 逻(Luo)辑(Ji)摆(Bai)幅(Fu)Lorentz 洛(Luo)沦(Lun)兹(Zi)Lumped model 集(Ji)总(Zong)模(Mo)型(Xing)MMajority carrier 多(Duo)数(Shu)载(Zai)流(Liu)子(Zi)Mask 掩(Yan)膜(Mo)板(Ban)，光(Guang)刻(Ke)板(Ban)Mask level 掩(Yan)模(Mo)序(Xu)号(Hao)Mask set 掩(Yan)模(Mo)组(Zu)Mass - action law质(Zhi)量(Liang)守(Shou)恒(Heng)定(Ding)律(Lv)Master-slave D flip-flop主(Zhu)从(Cong)D触(Chu)发(Fa)器(Qi)Matching 匹(Pi)配(Pei)Maxwell 麦(Mai)克(Ke)斯(Si)韦(Wei)Mean free path 平(Ping)均(Jun)自(Zi)由(You)程(Cheng)Meandered emitter junction梳(Shu)状(Zhuang)发(Fa)射(She)极(Ji)结(Jie)Mean time before failure (MTBF) 平(Ping)均(Jun)工(Gong)作(Zuo)时(Shi)间(Jian)Megeto - resistance 磁(Ci)阻(Zu)Mesa 台(Tai)面(Mian)MESFET-Metal Semiconductor金(Jin)属(Shu)半(Ban)导(Dao)体(Ti)FETMetallization 金(Jin)属(Shu)化(Hua)Microelectronic technique 微(Wei)电(Dian)子(Zi)技(Ji)术(Shu)Microelectronics 微(Wei)电(Dian)子(Zi)学(Xue)Millen indices 密(Mi)勒(Le)指(Zhi)数(Shu)Minority carrier 少(Shao)数(Shu)载(Zai)流(Liu)子(Zi)Misfit 失(Shi)配(Pei)Mismatching 失(Shi)配(Pei)Mobile ions 可(Ke)动(Dong)离(Li)子(Zi)Mobility 迁(Qian)移(Yi)率(Lv)Module 模(Mo)块(Kuai)Modulate 调(Diao)制(Zhi)Molecular crystal分(Fen)子(Zi)晶(Jing)体(Ti)Monolithic IC 单(Dan)片(Pian)IC MOSFET金(Jin)属(Shu)氧(Yang)化(Hua)物(Wu)半(Ban)导(Dao)体(Ti)场(Chang)效(Xiao)应(Ying)晶(Jing)体(Ti)管(Guan)Mos. Transistor(MOST )MOS. 晶(Jing)体(Ti)管(Guan)Multiplication 倍(Bei)增(Zeng)Modulator 调(Diao)制(Zhi)Multi-chip IC 多(Duo)芯(Xin)片(Pian)ICMulti-chip module(MCM) 多(Duo)芯(Xin)片(Pian)模(Mo)块(Kuai)Multiplication coefficient倍(Bei)增(Zeng)因(Yin)子(Zi)NNaked chip 未(Wei)封(Feng)装(Zhuang)的(De)芯(Xin)片(Pian)（裸(Luo)片(Pian)）Negative feedback 负(Fu)反(Fan)馈(Kui)Negative resistance 负(Fu)阻(Zu)Nesting 套(Tao)刻(Ke)Negative-temperature-coefficient 负(Fu)温(Wen)度(Du)系(Xi)数(Shu)Noise margin 噪(Zao)声(Sheng)容(Rong)限(Xian)Nonequilibrium 非(Fei)平(Ping)衡(Heng)Nonrolatile 非(Fei)挥(Hui)发(Fa)（易(Yi)失(Shi)）性(Xing)Normally off/on 常(Chang)闭(Bi)/开(Kai)Numerical analysis 数(Shu)值(Zhi)分(Fen)析(Xi)OOccupied band 满(Man)带(Dai)Officienay 功(Gong)率(Lv)Offset 偏(Pian)移(Yi)、失(Shi)调(Diao)On standby 待(Dai)命(Ming)状(Zhuang)态(Tai)Ohmic contact 欧(Ou)姆(Mu)接(Jie)触(Chu)Open circuit 开(Kai)路(Lu)Operating point 工(Gong)作(Zuo)点(Dian)Operating bias 工(Gong)作(Zuo)偏(Pian)置(Zhi)Operational amplifier (OPAMP)运(Yun)算(Suan)放(Fang)大(Da)器(Qi)Optical photon =photon 光(Guang)子(Zi)Optical quenching光(Guang)猝(Zuo)灭(Mie)Optical transition 光(Guang)跃(Yue)迁(Qian)Optical-coupled isolator光(Guang)耦(Zuo)合(He)隔(Ge)离(Li)器(Qi)Organic semiconductor有(You)机(Ji)半(Ban)导(Dao)体(Ti)Orientation 晶(Jing)向(Xiang)、定(Ding)向(Xiang)Outline 外(Wai)形(Xing)Out-of-contact mask非(Fei)接(Jie)触(Chu)式(Shi)掩(Yan)模(Mo)Output characteristic 输(Shu)出(Chu)特(Te)性(Xing)Output voltage swing 输(Shu)出(Chu)电(Dian)压(Ya)摆(Bai)幅(Fu)Overcompensation 过(Guo)补(Bu)偿(Chang)Over-current protection 过(Guo)流(Liu)保(Bao)护(Hu)Over shoot 过(Guo)冲(Chong)Over-voltage protection 过(Guo)压(Ya)保(Bao)护(Hu)Overlap 交(Jiao)迭(Die)Overload 过(Guo)载(Zai)Oscillator 振(Zhen)荡(Dang)器(Qi)Oxide 氧(Yang)化(Hua)物(Wu)Oxidation 氧(Yang)化(Hua)Oxide passivation 氧(Yang)化(Hua)层(Ceng)钝(Dun)化(Hua)PPackage 封(Feng)装(Zhuang)Pad 压(Ya)焊(Han)点(Dian)Parameter 参(Can)数(Shu)Parasitic effect 寄(Ji)生(Sheng)效(Xiao)应(Ying)Parasitic oscillation 寄(Ji)生(Sheng)振(Zhen)荡(Dang)Passination 钝(Dun)化(Hua)Passive component 无(Wu)源(Yuan)元(Yuan)件(Jian)Passive device 无(Wu)源(Yuan)器(Qi)件(Jian)Passive surface 钝(Dun)化(Hua)界(Jie)面(Mian)Parasitic transistor 寄(Ji)生(Sheng)晶(Jing)体(Ti)管(Guan)Peak-point voltage 峰(Feng)点(Dian)电(Dian)压(Ya)Peak voltage 峰(Feng)值(Zhi)电(Dian)压(Ya)Permanent-storage circuit 永(Yong)久(Jiu)存(Cun)储(Chu)电(Dian)路(Lu)Period 周(Zhou)期(Qi)Periodic table 周(Zhou)期(Qi)表(Biao)Permeable - base 可(Ke)渗(Shen)透(Tou)基(Ji)区(Qu)Phase-lock loop 锁(Suo)相(Xiang)环(Huan)Phase drift 相(Xiang)移(Yi)Phonon spectra 声(Sheng)子(Zi)谱(Pu)Photo conduction 光(Guang)电(Dian)导(Dao)Photo diode 光(Guang)电(Dian)二(Er)极(Ji)管(Guan)Photoelectric cell 光(Guang)电(Dian)池(Chi)Photoelectric effect 光(Guang)电(Dian)效(Xiao)应(Ying)Photoenic devices 光(Guang)子(Zi)器(Qi)件(Jian)Photolithographic process 光(Guang)刻(Ke)工(Gong)艺(Yi)(photo) resist （光(Guang)敏(Min)）抗(Kang)腐(Fu)蚀(Shi)剂(Ji)Pin 管(Guan)脚(Jiao)Pinch off 夹(Jia)断(Duan)Pinning of Fermi level 费(Fei)米(Mi)能(Neng)级(Ji)的(De)钉(Ding)扎(Zha)（效(Xiao)应(Ying)）Planar process 平(Ping)面(Mian)工(Gong)艺(Yi)Planar transistor 平(Ping)面(Mian)晶(Jing)体(Ti)管(Guan)Plasma 等(Deng)离(Li)子(Zi)体(Ti)Plezoelectric effect 压(Ya)电(Dian)效(Xiao)应(Ying)Poisson equation 泊(Bo)松(Song)方(Fang)程(Cheng)Point contact 点(Dian)接(Jie)触(Chu)Polarity 极(Ji)性(Xing)Polycrystal 多(Duo)晶(Jing)Polymer semiconductor聚(Ju)合(He)物(Wu)半(Ban)导(Dao)体(Ti)Poly-silicon 多(Duo)晶(Jing)硅(Gui)Potential (电(Dian))势(Shi)Potential barrier 势(Shi)垒(Lei)Potential well 势(Shi)阱(Zuo)Power dissipation 功(Gong)耗(Hao)Power transistor 功(Gong)率(Lv)晶(Jing)体(Ti)管(Guan)Preamplifier 前(Qian)置(Zhi)放(Fang)大(Da)器(Qi)Primary flat 主(Zhu)平(Ping)面(Mian)Principal axes 主(Zhu)轴(Zhou)Print-circuit board(PCB) 印(Yin)制(Zhi)电(Dian)路(Lu)板(Ban)Probability 几(Ji)率(Lv)Probe 探(Tan)针(Zhen)Process 工(Gong)艺(Yi)Propagation delay 传(Chuan)输(Shu)延(Yan)时(Shi)Pseudopotential method 膺(Zuo)势(Shi)发(Fa)Punch through 穿(Chuan)通(Tong)Pulse triggering/modulating 脉(Mai)冲(Chong)触(Chu)发(Fa)/调(Diao)制(Zhi)PulseWiden Modulator(PWM) 脉(Mai)冲(Chong)宽(Kuan)度(Du)调(Diao)制(Zhi)Punchthrough 穿(Chuan)通(Tong)Push-pull stage 推(Tui)挽(Wan)级(Ji)QQuality factor 品(Pin)质(Zhi)因(Yin)子(Zi)Quantization 量(Liang)子(Zi)化(Hua)Quantum 量(Liang)子(Zi)Quantum efficiency量(Liang)子(Zi)效(Xiao)应(Ying)Quantum mechanics 量(Liang)子(Zi)力(Li)学(Xue)Quasi – Fermi－level准(Zhun)费(Fei)米(Mi)能(Neng)级(Ji)Quartz 石(Shi)英(Ying)RRadiation conductivity 辐(Fu)射(She)电(Dian)导(Dao)率(Lv)Radiation damage 辐(Fu)射(She)损(Sun)伤(Shang)Radiation flux density 辐(Fu)射(She)通(Tong)量(Liang)密(Mi)度(Du)Radiation hardening 辐(Fu)射(She)加(Jia)固(Gu)Radiation protection 辐(Fu)射(She)保(Bao)护(Hu)Radiative - recombination辐(Fu)照(Zhao)复(Fu)合(He)Radioactive 放(Fang)射(She)性(Xing)Reach through 穿(Chuan)通(Tong)Reactive sputtering source 反(Fan)应(Ying)溅(Jian)射(She)源(Yuan)Read diode 里(Li)德(De)二(Er)极(Ji)管(Guan)Recombination 复(Fu)合(He)Recovery diode 恢(Hui)复(Fu)二(Er)极(Ji)管(Guan)Reciprocal lattice 倒(Dao)核(He)子(Zi)Recovery time 恢(Hui)复(Fu)时(Shi)间(Jian)Rectifier 整(Zheng)流(Liu)器(Qi)（管(Guan)）Rectifying contact 整(Zheng)流(Liu)接(Jie)触(Chu)Reference 基(Ji)准(Zhun)点(Dian) 基(Ji)准(Zhun) 参(Can)考(Kao)点(Dian)Refractive index 折(Zhe)射(She)率(Lv)Register 寄(Ji)存(Cun)器(Qi)Registration 对(Dui)准(Zhun)Regulate 控(Kong)制(Zhi) 调(Diao)整(Zheng)Relaxation lifetime 驰(Chi)豫(Yu)时(Shi)间(Jian)Reliability 可(Ke)靠(Kao)性(Xing)Resonance 谐(Xie)振(Zhen)Resistance 电(Dian)阻(Zu)Resistor 电(Dian)阻(Zu)器(Qi)Resistivity 电(Dian)阻(Zu)率(Lv)Regulator 稳(Wen)压(Ya)管(Guan)（器(Qi)）Relaxation 驰(Chi)豫(Yu)Resonant frequency共(Gong)射(She)频(Pin)率(Lv)Response time 响(Xiang)应(Ying)时(Shi)间(Jian)Reverse 反(Fan)向(Xiang)的(De)Reverse bias 反(Fan)向(Xiang)偏(Pian)置(Zhi)SSampling circuit 取(Qu)样(Yang)电(Dian)路(Lu)Sapphire 蓝(Lan)宝(Bao)石(Shi)（Al2O3）Satellite valley 卫(Wei)星(Xing)谷(Gu)Saturated current range电(Dian)流(Liu)饱(Bao)和(He)区(Qu)Saturation region 饱(Bao)和(He)区(Qu)Saturation 饱(Bao)和(He)的(De)Scaled down 按(An)比(Bi)例(Li)缩(Suo)小(Xiao)Scattering 散(San)射(She)Schockley diode 肖(Xiao)克(Ke)莱(Lai)二(Er)极(Ji)管(Guan)Schottky 肖(Xiao)特(Te)基(Ji)Schottky barrier 肖(Xiao)特(Te)基(Ji)势(Shi)垒(Lei)Schottky contact 肖(Xiao)特(Te)基(Ji)接(Jie)触(Chu)Schrodingen 薛(Xue)定(Ding)厄(E)Scribing grid 划(Hua)片(Pian)格(Ge)Secondary flat 次(Ci)平(Ping)面(Mian)Seed crystal 籽(Zi)晶(Jing)Segregation 分(Fen)凝(Ning)Selectivity 选(Xuan)择(Ze)性(Xing)Self aligned 自(Zi)对(Dui)准(Zhun)的(De)Self diffusion 自(Zi)扩(Kuo)散(San)Semiconductor 半(Ban)导(Dao)体(Ti)Semiconductor-controlled rectifier 可(Ke)控(Kong)硅(Gui)Sendsitivity 灵(Ling)敏(Min)度(Du)Serial 串(Chuan)行(Xing)/串(Chuan)联(Lian)Series inductance 串(Chuan)联(Lian)电(Dian)感(Gan)Settle time 建(Jian)立(Li)时(Shi)间(Jian)Sheet resistance 薄(Bao)层(Ceng)电(Dian)阻(Zu)Shield 屏(Ping)蔽(Bi)Short circuit 短(Duan)路(Lu)Shot noise 散(San)粒(Li)噪(Zao)声(Sheng)Shunt 分(Fen)流(Liu)Sidewall capacitance边(Bian)墙(Qiang)电(Dian)容(Rong) Signal 信(Xin)号(Hao)Silica glass 石(Shi)英(Ying)玻(Bo)璃(Li)Silicon 硅(Gui)Silicon carbide 碳(Tan)化(Hua)硅(Gui)Silicon dioxide (SiO2) 二(Er)氧(Yang)化(Hua)硅(Gui)Silicon Nitride(Si3N4) 氮(Dan)化(Hua)硅(Gui)Silicon On Insulator 绝(Jue)缘(Yuan)硅(Gui)Siliver whiskers 银(Yin)须(Xu)Simple cubic 简(Jian)立(Li)方(Fang)Single crystal 单(Dan)晶(Jing)Sink 沉(Chen)Skin effect 趋(Qu)肤(Fu)效(Xiao)应(Ying)Snap time 急(Ji)变(Bian)时(Shi)间(Jian)Sneak path 潜(Qian)行(Xing)通(Tong)路(Lu)Sulethreshold 亚(Ya)阈(Zuo)的(De)Solar battery/cell 太(Tai)阳(Yang)能(Neng)电(Dian)池(Chi)Solid circuit 固(Gu)体(Ti)电(Dian)路(Lu)Solid Solubility 固(Gu)溶(Rong)度(Du)Sonband 子(Zi)带(Dai)Source 源(Yuan)极(Ji)Source follower 源(Yuan)随(Sui)器(Qi)Space charge 空(Kong)间(Jian)电(Dian)荷(He)Specific heat(PT) 热(Re)Speed-power product 速(Su)度(Du)功(Gong)耗(Hao)乘(Cheng)积(Ji) Spherical 球(Qiu)面(Mian)的(De)Spin 自(Zi)旋(Xuan) Split 分(Fen)裂(Lie)Spontaneous emission 自(Zi)发(Fa)发(Fa)射(She)Spreading resistance扩(Kuo)展(Zhan)电(Dian)阻(Zu)Sputter 溅(Jian)射(She) Stacking fault 层(Ceng)错(Cuo)Static characteristic 静(Jing)态(Tai)特(Te)性(Xing)Stimulated emission 受(Shou)激(Ji)发(Fa)射(She)Stimulated recombination 受(Shou)激(Ji)复(Fu)合(He)Storage time 存(Cun)储(Chu)时(Shi)间(Jian)Stress 应(Ying)力(Li)Straggle 偏(Pian)差(Cha)Sublimation 升(Sheng)华(Hua)Substrate 衬(Chen)底(Di)Substitutional 替(Ti)位(Wei)式(Shi)的(De)Superlattice 超(Chao)晶(Jing)格(Ge)Supply 电(Dian)源(Yuan) Surface 表(Biao)面(Mian)Surge capacity 浪(Lang)涌(Yong)能(Neng)力(Li)Subscript 下(Xia)标(Biao)Switching time 开(Kai)关(Guan)时(Shi)间(Jian)Switch 开(Kai)关(Guan)TTailing 扩(Kuo)展(Zhan)Terminal 终(Zhong)端(Duan)Tensor 张(Zhang)量(Liang) Tensorial 张(Zhang)量(Liang)的(De)Thermal activation 热(Re)激(Ji)发(Fa)Thermal conductivity 热(Re)导(Dao)率(Lv)Thermal equilibrium 热(Re)平(Ping)衡(Heng)Thermal Oxidation 热(Re)氧(Yang)化(Hua)Thermal resistance 热(Re)阻(Zu)Thermal sink 热(Re)沉(Chen)Thermal velocity 热(Re)运(Yun)动(Dong)Thermoelectricpovoer 温(Wen)差(Cha)电(Dian)动(Dong)势(Shi)率(Lv)Thick-film technique 厚(Hou)膜(Mo)技(Ji)术(Shu)Thin-film hybrid IC薄(Bao)膜(Mo)混(Hun)合(He)集(Ji)成(Cheng)电(Dian)路(Lu)Thin-Film Transistor(TFT) 薄(Bao)膜(Mo)晶(Jing)体(Ti)Threshlod 阈(Zuo)值(Zhi)Thyistor 晶(Jing)闸(Zha)管(Guan)Transconductance 跨(Kua)导(Dao)Transfer characteristic 转(Zhuan)移(Yi)特(Te)性(Xing)Transfer electron 转(Zhuan)移(Yi)电(Dian)子(Zi)Transfer function 传(Chuan)输(Shu)函(Han)数(Shu) Transient 瞬(Shun)态(Tai)的(De)Transistor aging(stress) 晶(Jing)体(Ti)管(Guan)老(Lao)化(Hua)Transit time 渡(Du)越(Yue)时(Shi)间(Jian)Transition 跃(Yue)迁(Qian)Transition-metal silica 过(Guo)度(Du)金(Jin)属(Shu)硅(Gui)化(Hua)物(Wu)Transition probability 跃(Yue)迁(Qian)几(Ji)率(Lv)Transition region 过(Guo)渡(Du)区(Qu)Transport 输(Shu)运(Yun) Transverse 横(Heng)向(Xiang)的(De)Trap 陷(Xian)阱(Zuo) Trapping 俘(Fu)获(Huo)Trapped charge 陷(Xian)阱(Zuo)电(Dian)荷(He)Triangle generator 三(San)角(Jiao)波(Bo)发(Fa)生(Sheng)器(Qi)Triboelectricity 摩(Mo)擦(Ba)电(Dian)Trigger 触(Chu)发(Fa)Trim 调(Diao)配(Pei) 调(Diao)整(Zheng)Triple diffusion 三(San)重(Zhong)扩(Kuo)散(San)Truth table 真(Zhen)值(Zhi)表(Biao)Tolerahce 容(Rong)差(Cha)Tunnel(ing) 隧(Sui)道(Dao)（穿(Chuan)）Tunnel current 隧(Sui)道(Dao)电(Dian)流(Liu)Turn over 转(Zhuan)折(Zhe)Turn - off time 关(Guan)断(Duan)时(Shi)间(Jian)UUltraviolet 紫(Zi)外(Wai)的(De)Unijunction 单(Dan)结(Jie)的(De)Unipolar 单(Dan)极(Ji)的(De)Unit cell 原(Yuan)（元(Yuan)）胞(Bao)Unity-gain frequency 单(Dan)位(Wei)增(Zeng)益(Yi)频(Pin)率(Lv)Unilateral-switch单(Dan)向(Xiang)开(Kai)关(Guan)VVacancy 空(Kong)位(Wei) Vacuum 真(Zhen)空(Kong)Valence(value) band 价(Jia)带(Dai) Value band edge 价(Jia)带(Dai)顶(Ding)Valence bond 价(Jia)键(Jian) Vapour phase 汽(Qi)相(Xiang)Varactor 变(Bian)容(Rong)管(Guan) Varistor 变(Bian)阻(Zu)器(Qi)Vibration 振(Zhen)动(Dong) Voltage 电(Dian)压(Ya)WWafer 晶(Jing)片(Pian)Wave equation 波(Bo)动(Dong)方(Fang)程(Cheng)Wave guide 波(Bo)导(Dao)Wave number 波(Bo)数(Shu)Wave-particle duality 波(Bo)粒(Li)二(Er)相(Xiang)性(Xing)Wear-out 烧(Shao)毁(Hui)Wire routing 布(Bu)线(Xian)Work function 功(Gong)函(Han)数(Shu)Worst-case device 最(Zui)坏(Huai)情(Qing)况(Kuang)器(Qi)件(Jian)YYield 成(Cheng)品(Pin)率(Lv)ZZener breakdown 齐(Qi)纳(Na)击(Ji)穿(Chuan)Zone melting 区(Qu)熔(Rong)法(Fa)感(Gan)恩(En)赞(Zan)赏(Shang)，为(Wei)中(Zhong)国(Guo)芯(Xin)加(Jia)油(You)！大(Da)家(Jia)怎(Zen)么(Me)看(Kan)？快(Kuai)来(Lai)留(Liu)言(Yan)交(Jiao)流(Liu)吧(Ba)^_^如(Ru)侵(Qin)删(Shan)丨(Zuo)如(Ru)转(Zhuan)注(Zhu)【原(Yuan)创(Chuang)不(Bu)易(Yi)，记(Ji)得(De)转(Zhuan)发(Fa)】半(Ban)导(Dao)体(Ti)人(Ren)临(Lin)走(Zou)记(Ji)得(De)点(Dian)下(Xia)方(Fang)拇(Mu)指(Zhi)留(Liu)下(Xia)脚(Jiao)印(Yin)。如(Ru)觉(Jue)文(Wen)章(Zhang)不(Bu)错(Cuo)，留(Liu)言(Yan)评(Ping)论(Lun)，转(Zhuan)发(Fa)更(Geng)多(Duo)朋(Peng)友(You)，传(Chuan)递(Di)咱(Zan)半(Ban)导(Dao)体(Ti)人(Ren)的(De)观(Guan)点(Dian)。智(Zhi)能(Neng)推(Tui)荐(Jian)：80页(Ye)PPT看(Kan)懂(Dong)半(Ban)导(Dao)体(Ti)行(Xing)业(Ye)一(Yi)颗(Ke)芯(Xin)片(Pian)，咋(Zha)就(Jiu)这(Zhe)么(Me)难(Nan)造(Zao)？ |转(Zhuan)疯(Feng)了(Liao)中(Zhong)国(Guo)半(Ban)导(Dao)体(Ti)困(Kun)境(Jing)！这(Zhe)篇(Pian)讲(Jiang)全(Quan)了(Liao)！中(Zhong)国(Guo)芯(Xin)酸(Suan)往(Wang)事(Shi)！|戴(Dai)老(Lao)板(Ban)制(Zhi)裁(Cai)晋(Jin)华(Hua)背(Bei)后(Hou)：中(Zhong)国(Guo)尚(Shang)未(Wei)掌(Zhang)控(Kong)的(De)核(He)心(Xin)技(Ji)术(Shu)清(Qing)单(Dan)福(Fu)利(Li)下(Xia)载(Zai)：电(Dian)子(Zi)技(Ji)术(Shu)全(Quan)套(Tao)资(Zi)料(Liao)，工(Gong)程(Cheng)师(Shi)必(Bi)看(Kan)！制(Zhi)裁(Cai)晋(Jin)华(Hua)背(Bei)后(Hou)：中(Zhong)国(Guo)尚(Shang)未(Wei)掌(Zhang)控(Kong)的(De)核(He)心(Xin)技(Ji)术(Shu)清(Qing)单(Dan)！这(Zhe)可(Ke)能(Neng)是(Shi)最(Zui)全(Quan)的(De)，中(Zhong)国(Guo)尚(Shang)未(Wei)掌(Zhang)控(Kong)的(De)核(He)心(Xin)技(Ji)术(Shu)清(Qing)单(Dan)（芯(Xin) 榜(Bang)中(Zhong)国(Guo)半(Ban)导(Dao)体(Ti)排(Pai)行(Xing)榜(Bang)！ 添(Tian) 加(Jia)芯(Xin) 片(Pian) 圈(Quan)芯(Xin)片(Pian)半(Ban)导(Dao)体(Ti)人(Ren)的(De)圈(Quan)子(Zi)！添(Tian) 加(Jia)区(Qu)块(Kuai)链(Lian)首(Shou)席(Xi)区(Qu)块(Kuai)链(Lian)从(Cong)入(Ru)门(Men)到(Dao)精(Jing)通(Tong)。在(Zai)这(Zhe)里(Li)，憋(Bie)大(Da)招(Zhao)！添(Tian) 加(Jia)1芯(Xin) 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