aqdav.com子域名大全 aqdav.com二级域名 aqdav.com...
“点名批评”的就是法国有着“美少女”之称的科内特，她在比赛上上的着装就非常大胆、性感。
2025年01月06日，441 759 85319
aqdav.com子域名大全 aqdav.com二级域名 aqdav.com...
赵童在江苏常州经营一家超市多年不久前农夫山泉的业务员跟她说领导已经对业务员们下了指示——不要怕终端（线下门店）不进货你拿钱砸猛砸
此外，深交所要求公司补充披露经营计划调整的具体流程，并结合叁文鱼养殖行业生产、销售周期、公司近3年投苗计划及变动情况等，说明对础耻蝉迟谤补濒颈蝉资产组组合计提商誉减值是否及时、充分，是否存在对2022年业绩进行“大洗澡”的情形。总之，去电影院看，绝对值得。
shoucang｜bandaotiyixieshuyudezhongyingwenduizhao2018-12-03 04:20·xinbangxin pian quanxinpianbandaotirendequanzi！100000+guanzhujingcaituijianlaiyuan：ittbankchangyongbandaotizhongyingduizhaobiaochangyongdelizizhuruji：ion implanterLSSlilun：Lindhand Scharff and Schiott theory，youcheng“linhande-sikafu-sigaotelilun”。goudaoxiaoying：channeling effectshechengfenbu：range distributionshendufenbu：depth distributiontouyingshecheng：projected rangezuzhijuli：stopping distancezuzhibenling：stopping powerbiaozhunzuzhijiemian：standard stopping cross sectiontuihuo：annealingjihuoneng：activation energydengwentuihuo：isothermal annealingjiguangtuihuo：laser annealingyingliganshengquexian：stress-induced defectzeyouquxiang：preferred orientationzhibangongyi：mask-making technologytuxingjibian：pattern distortionchusuo：first minificationjingsuo：final minificationmuban：master maskgeban：chromium plateganban：dry platerujiaoban：emulsion platetoumingban：see-through plategaofenbianlvban：high resolution plate, HRPchaoweiliganban：plate forultra-microminiaturizationyanmo：maskyanmoduizhun：mask alignmentduizhunjingdu：alignment precisionguangkejiao：photoresist，youcheng“guangzhikangshiji”。fuxingguangkejiao：negative photoresistzhengxingguangkejiao：positive photoresistwujiguangkejiao：inorganic resistduocengguangkejiao：multilevel resistdianzishuguangkejiao：electron beam resistXshexianguangkejiao：X-ray resistshuaxi：scrubbingshuaijiao：spinningtujiao：photoresist coatinghouhong：postbakingguangke：photolithographyXshexianguangke：X-ray lithographydianzishuguangke：electron beam lithographylizishuguangke：ion beam lithographyshenziwaiguangke：deep-UV lithographyguangkeji：mask alignertouyingguangkeji：projection mask alignerpuguang：exposurejiechushipuguangfa：contact exposure methodjiejinshipuguangfa：proximity exposure methodguangxuetouyingpuguangfa：optical projection exposure methoddianzishupuguangxitong：electron beam exposure systemfenbuzhongfuxitong：step-and-repeat systemxianying：developmentxiankuan：linewidthqujiao：stripping of photoresistyanghuaqujiao：removing of photoresist by oxidationdenglizi［ti］qujiao：removing of photoresist by plasmakeshi：etchingganfakeshi：dry etchingfanyinglizikeshi：reactive ion etching,：RIEgexiangtongxingkeshi：isotropic etchinggexiangyixingkeshi：anisotropic etchingfanyingjianshekeshi：reactive sputter etchinglizixi：ion beam milling，youcheng“lizimoxiao”。denglizi［ti］keshi：plasma etchingzuanshi：undercuttingbaolijishu：lift-off technology，youcheng“futuogongyi”。zhongdianjiance：endpoint monitoringjinshuhua：metallizationhulian：interconnectionduocengjinshuhua：multilevel metallizationdianqianzuo：electromigrationhuiliu：reflowlinguiboli：phosphorosilicate glasspenglinguiboli：boron-phosphorosilicate glassdunhuagongyi：passivation technologyduocengjiezhidunhua：multilayer dielectric passivationhuapian：scribingdianzishuqiepian：electron beam slicingshaojie：sinteringyinya：indentationreyahan：thermocompression bondingrechaoshenghan：thermosonic bondinglenghan：cold weldingdianhan：spot weldingqiuhan：ball bondingxiehan：wedge bondingneiyinxianhanjie：inner lead bondingwaiyinxianhanjie：outer lead bondingliangshiyinxian：beam leadzhuangjiagongyi：mounting technologyfuzhuo：adhesionfengzhuang：packagingjinshufengzhuang：metallic packagingtaocifengzhuang：ceramic packagingbianpingfengzhuang：flat packagingsufeng：plastic packagebolifengzhuang：glass packagingweifengzhuang：micropackaging，youcheng“weizuzhuang”。guanke：packageguanxin：dieyinxianjianhe：lead bondingyinxiankuangshijianhe：lead frame bondingdaishizidongjianhe：tape automated bonding, TABjiguangjianhe：laser bondingchaoshengjianhe：ultrasonic bondinghongwaijianhe：infrared bondingweidianzicidiandajihe（anshouzimushunxupaixu）AAbrupt junction tubianjieAccelerated testing jiasushiyanAcceptor shouzhuAcceptor atom shouzhuyuanziAccumulation jilei、duijiAccumulating contact jileijiechuAccumulation region jileiquAccumulation layer jileicengActive region youyuanquActive component youyuanyuanActive device youyuanqijianActivation jihuoActivation energy jihuonengActive region youyuan（fangda）quAdmittance daonaAllowed band yundaiAlloy-junction devicehejinjieqijian Aluminum(Aluminium) lvAluminum – oxide lvyanghuawuAluminum passivation lvdunhuaAmbipolar shuangjideAmbient temperature huanjingwenduAmorphous wudingxingde，feijingtideAmplifier gongfang kuoyinqi fangdaqiAnalogue(Analog) comparator monibijiaoqi Angstrom aiAnneal tuihuoAnisotropic gexiangyixingdeAnode yangjiArsenic (AS) shenAuger exieAuger process exieguochengAvalanche xuebengAvalanche breakdown xuebengjichuanAvalanche excitationxuebengjifaBBackground carrier bendizailiuziBackground doping bendichanzaBackward fanxiangBackward bias fanxiangpianzhiBallasting resistor zhengliudianzuBall bond qiuxingjianheBand gap nengdaijianxiBarrier shileiBarrier layer shileicengBarrier width shileikuanduBase jijiBase contact jiqujiechuBase stretching jiqukuozhanxiaoyingBase transit time jiquduyueshijianBase transport efficiencyjiqushuyunxishuBase-width modulationjiqukuandudiaozhiBasis vector jishiBias pianzhiBilateral switch shuangxiangkaiguanBinary code erjinzhidaimaBinary compound semiconductor eryuanhuahewubandaotiBipolar shuangjixingdeBipolar Junction Transistor (BJT)shuangjijingtiguanBloch buluoheBlocking band zudangnengdaiBlocking contact zudangjiechuBody - centered tixinlifangBody-centred cubic structure tilixinjiegouBoltzmann boerzimanBond jian、jianheBonding electron jiadianziBonding pad jianhedianBootstrap circuit zijudianluBootstrapped emitter follower zijushejigensuiqiBoron pengBorosilicate glass pengguiboliBoundary condition bianjietiaojianBound electron shufudianziBreadboard moniban、shiyanbanBreak down jichuanBreak over zhuanzheBrillouin buliyuanBrillouin zone buliyuanquBuilt-in neijiandeBuild-in electric field neijiandianchangBulk ti/tinei Bulk absorption tixishouBulk generation tichanshengBulk recombination tifuheBurn - in laohuaBurn out shaohuiBuried channel maigouBuried diffusion region yinmaikuosanquCCan waikeCapacitance dianrongCapture cross section fuhuojiemianCapture carrier fuhuozailiuziCarrier zailiuzi、zaiboCarry bit jinweiweiCarry-in bit jinweishuruCarry-out bit jinweishuchuCascade jilianCase guankeCathode yinjiCenter zhongxinCeramic taoci（de）Channel goudaoChannel breakdown goudaojichuanChannel current goudaodianliuChannel doping goudaochanzaChannel shortening goudaosuoduanChannel width goudaokuanduCharacteristic impedance tezhengzukangCharge dianhe、chongdianCharge-compensation effects dianhebuchangxiaoyingCharge conservation dianheshouhengCharge neutrality condition dianzhongxingtiaojianChargedrive/exchange/sharing/transfer/storage dianhequdong/jiaohuan/gongxiang/zhuanyi/cunchuChemmical etching huaxuefushifaChemically-Polish huaxuepaoguangChemmically-Mechanically Polish (CMP) huaxuejixiepaoguang Chip xinpianChip yield xinpianchengpinlvClamped zuoweiClamping diode zuoweierjiguanCleavage plane jielimianClock rate shizhongpinlvClock generator shizhongfashengqiClock flip-flop shizhongchufaqiClose-packed structure miduijijiegouClose-loop gain bihuanzengyiCollector jidianjiCollision pengzhuangCompensated OP-AMP buchangyunfangCommon-base/collector/emitter connection gongjiji/jidianji/fashejilianjieCommon-gate/drain/source connection gongzha/lou/yuanlianjieCommon-mode gain gongmozengyiCommon-mode input gongmoshuruCommon-mode rejection ratio (CMRR) gongmoyizhibiCompatibility jianrongxingCompensation buchangCompensated impurities buchangzazhiCompensated semiconductor buchangbandaotiComplementary Darlington circuit hubudalindundianluComplementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS) hubujinshuyanghuawubandaotichangxiaoyingjingtiguanComplementary error function yuwuchahanshuComputer-aided design (CAD)/test(CAT)/manufacture(CAM) jisuanjifuzhusheji/ ceshi /zhi zaoCompound Semiconductor huahewubandaotiConductance diandaoConduction band (edge) daodai(di)Conduction level/state daodaitaiConductor daotiConductivity diandaolvConfiguration zutaiConlomb kulunConpled Configuration Devices jiegouzutaiConstants wulichangshuConstant energy surface dengnengmianConstant-source diffusionhengdingyuankuosanContact jiechuContamination zhiwuContinuity equation lianxuxingfangchengContact hole jiechukongContact potential jiechudianshiContinuity condition lianxuxingtiaojianContra doping fanchanzaControlled shoukongdeConverter zhuanhuanqiConveyer chuanshuqiCopper interconnection system tonghulianxitongCouping zuoheCovalent gongjiedeCrossover kuajiaoCritical linjiedeCrossunder chuanjiaoCruciblezuozuoCrystaldefect/face/orientation/lattice jingtiquexian/jingmian/jingxiang/jinggeCurrent density dianliumiduCurvature qulvCut off jiezhiCurrent drift/dirve/sharing dianliupiaoyi/qudong/gongxiangCurrent Sense dianliuquyangCurvature wanquCustom integrated circuit dingzhijichengdianluCylindrical zhumiandeCzochralshicrystal zhilidanjingCzochralski technique qiekelaosijijishu（CzfazhilajingtiJ）DDangling bonds xuanguajianDark current andianliuDead time kongzaishijianDebye length debaichangduDe.broglie debuluoyiDecderate jiansuDecibel (dB) fenbeiDecode yimaDeep acceptor level shenshouzhunengjiDeep donor level shenshizhunengjiDeep impurity level shenduzazhinengjiDeep trap shenxianzuoDefeat quexianDegenerate semiconductor jianbingbandaotiDegeneracy jianbingduDegradation tuihuaDegree Celsius(centigrade) /Kelvin sheshi/kaishiwenduDelay yanchi Density miduDensity of states taimiduDepletion haojinDepletion approximation haojinjinsiDepletion contact haojinjiechuDepletion depth haojinshenduDepletion effect haojinxiaoyingDepletion layer haojincengDepletion MOS haojinMOSDepletion region haojinquDeposited film dianjibaomoDeposition process dianjigongyiDesign rules shejiguizeDie xinpian（fushudice）Diode erjiguanDielectric jiediandeDielectric isolation jiezhigeliDifference-mode input chamoshuruDifferential amplifier chafenfangdaqiDifferential capacitance weifendianrongDiffused junction kuosanjieDiffusion kuosanDiffusion coefficient kuosanxishuDiffusion constant kuosanchangshuDiffusivity kuosanlvDiffusioncapacitance/barrier/current/furnace kuosandianrong/shilei/dianliu/luDigital circuit shuzidianluDipole domain oujichouDipole layer oujicengDirect-coupling zhijiezuoheDirect-gap semiconductor zhijiedaixibandaotiDirect transition zhijieyueqianDischarge fangdianDiscrete component fenliyuanjianDissipation haosanDistribution fenbuDistributed capacitance fenbudianrongDistributed model fenbumoxingDisplacement weiyi Dislocation weicuoDomain chou Donor shizhuDonor exhaustion shizhuhaojinDopant chanzajiDoped semiconductor chanzabandaotiDoping concentration chanzanongduDouble-diffusive MOS(DMOS)shuangkuosanMOS.Drift piaoyi Drift field piaoyidianchangDrift mobility qianyilvDry etching ganfafushiDry/wet oxidation gan/shifayanghuaDose jiliangDuty cycle gongzuozhouqiDual-in-line package （DIP） shuangliezhichashifengzhuangDynamics dongtaiDynamic characteristics dongtaishuxingDynamic impedance dongtaizukangEEarly effect elixiaoyingEarly failure zaoqishixiaoEffective mass youxiaozhiliangEinstein relation(ship) aiyinsitanguanxiElectric Erase Programmable Read Only Memory(E2PROM) yicixingdiankebachuzhiducunchuqiElectrode dianjiElectrominggratim dianqianyiElectron affinity dianziqinheshiElectronic -grade dianzinengElectron-beam photo-resist exposure guangzhikangshijidedianzishupuguangElectron gas dianziqiElectron-grade water dianzijichunshuiElectron trapping center dianzifuhuozhongxinElectron Volt (eV) dianzifuElectrostatic jingdiandeElement yuansu/yuanjian/peijianElemental semiconductor yuansubandaotiEllipse tuoyuanEllipsoid tuoqiuEmitter fashejiEmitter-coupled logic fashejizuoheluojiEmitter-coupled pair fashejizuoheduiEmitter follower shesuiqiEmpty band kongdaiEmitter crowding effect fashejijibian（yongji）xiaoyingEndurance test =life test shoumingceshiEnergy state nengtaiEnergy momentum diagram nengliang-dongliang(E-K)tuEnhancement mode zengqiangxingmoshiEnhancement MOS zengqiangxingMOS Entefic (di)gongrongdeEnvironmental test huanjingceshiEpitaxial waiyandeEpitaxial layer waiyancengEpitaxial slice waiyanpianExpitaxy waiyanEquivalent curcuit dengxiaodianluEquilibrium majority /minority carriers pinghengduoshu/shaoshuzailiuziErasable Programmable ROM (EPROM)kechaqu（biancheng）cunchuqiError function complement yuwuchahanshuEtch keshiEtchant keshijiEtching mask kangshijiyanmoExcess carrier guoshengzailiuziExcitation energy jifanengExcited state jifataiExciton jiziExtrapolation waituifaExtrinsic feibenzhengdeExtrinsic semiconductor zazhibandaotiFFace - centered mianxinlifangFall time xiajiangshijianFan-in shanruFan-out shanchuFast recovery kuaihuifuFast surface states kuaijiemiantaiFeedback fankuiFermi level feiminengjiFermi-Dirac Distribution feimi-dilakefenbuFemi potential feimishiFick equation feikefangcheng（kuosan）Field effect transistor changxiaoyingjingtiguanField oxide changyanghuacengFilled band mandaiFilm baomoFlash memory shanshuocunchuqiFlat band pingdaiFlat pack bianpingfengzhuangFlicker noise shanshuo（bian）zaoshengFlip-flop toggle chufaqifanzhuanFloating gate fuzhaFluoride etch fuhuaqingkeshiForbidden band jindaiForward bias zhengxiangpianzhiForward blocking /conductingzhengxiangzuduan/daotongFrequency deviation noisepinlvpiaoyizaoshengFrequency response pinlvxiangyingFunction hanshuGGain zengyi Gallium-Arsenide(GaAs) shenhuajiaGamy ray r shexianGate men、zha、kongzhijiGate oxide zhayanghuacengGauss（ian） gaosiGaussian distribution profile gaosichanzafenbuGeneration-recombination chansheng-fuheGeometries jihechicunGermanium(Ge) zheGraded huanbiandeGraded (gradual) channel huanbiangoudaoGraded junction huanbianjieGrain jingliGradient tiduGrown junction shengchangjieGuard ring baohuhuanGummel-Poom model gemou-pan moxingGunn - effect dishixiaoyingHHardened device fushejiaguqijianHeat of formation xingchengreHeat sink sanreqi、rechenHeavy/light hole band zhong/qing kongxuedaiHeavy saturation zhongchanzaHell - effect huoerxiaoyingHeterojunction yizhijieHeterojunction structure yizhijiejiegouHeterojunction Bipolar Transistor（HBT）yizhijieshuangjixingjingtiHigh field property gaochangtexingHigh-performance MOS.( H-MOS)gaoxingnengMOS. Hormalized guiyihuaHorizontal epitaxial reactor woshiwaiyanfanyingqiHot carrior rezailiuziHybrid integration hunhejichengIImage - force jingxiangliImpact ionization pengzhuangdianliImpedance zukangImperfect structure buwanzhengjiegouImplantation dose zhurujiliangImplanted ion zhuruliziImpurity zazhiImpurity scattering zazhisansheIncremental resistance dianzuzengliang（weifendianzu）In-contact mask jiechushiyanmoIndium tin oxide (ITO) zuoxiyanghuawuInduced channel ganyinggoudaoInfrared hongwaideInjection zhuruInput offset voltage shurushidiaodianyaInsulator jueyuantiInsulated Gate FET(IGFET)jueyuanzhaFET Integrated injection logicjichengzhuruluojiIntegration jicheng、jifenInterconnection hulianInterconnection time delay hulianyanshiInterdigitated structure jiaohushijiegouInterface jiemianInterference gansheInternational system of unionsguojidanweizhiInternally scattering gujiansansheInterpolation neichafaIntrinsic benzhengdeIntrinsic semiconductor benzhengbandaotiInverse operation fanxianggongzuoInversion fanxingInverter daoxiangqiIon liziIon beam lizishuIon etching lizikeshiIon implantation lizizhuruIonization dianliIonization energy dianlinengIrradiation fuzhaoIsolation land gelidaoIsotropic gexiangtongxingJJunction FET(JFET) jiexingchangxiaoyingguanJunction isolation jiegeliJunction spacing jiejianjuJunction side-wall jiecebiLLatch up bisuoLateral hengxiangdeLattice jinggeLayout bantuLatticebinding/cell/constant/defect/distortion jinggejieheli/jingbao/jingge/jinggechangshu/jinggequexian/jinggejibianLeakage current （xie）loudianliuLevel shifting dianpingyidongLife time shouminglinearity xianxingduLinked bond gongjiajianLiquid Nitrogen yedanLiquid－phase epitaxial growth technique yexiangwaiyanshengchangjishuLithography guangkeLight Emitting Diode(LED) faguangerjiguanLoad line or Variable fuzaixianLocating and Wiring bujubuxianLongitudinal zongxiangdeLogic swing luojibaifuLorentz luolunziLumped model jizongmoxingMMajority carrier duoshuzailiuziMask yanmoban，guangkebanMask level yanmoxuhaoMask set yanmozuMass - action lawzhiliangshouhengdinglvMaster-slave D flip-flopzhucongDchufaqiMatching pipeiMaxwell maikesiweiMean free path pingjunziyouchengMeandered emitter junctionshuzhuangfashejijieMean time before failure (MTBF) pingjungongzuoshijianMegeto - resistance cizuMesa taimianMESFET-Metal SemiconductorjinshubandaotiFETMetallization jinshuhuaMicroelectronic technique weidianzijishuMicroelectronics weidianzixueMillen indices milezhishuMinority carrier shaoshuzailiuziMisfit shipeiMismatching shipeiMobile ions kedongliziMobility qianyilvModule mokuaiModulate diaozhiMolecular crystalfenzijingtiMonolithic IC danpianIC MOSFETjinshuyanghuawubandaotichangxiaoyingjingtiguanMos. Transistor(MOST )MOS. jingtiguanMultiplication beizengModulator diaozhiMulti-chip IC duoxinpianICMulti-chip module(MCM) duoxinpianmokuaiMultiplication coefficientbeizengyinziNNaked chip weifengzhuangdexinpian（luopian）Negative feedback fufankuiNegative resistance fuzuNesting taokeNegative-temperature-coefficient fuwenduxishuNoise margin zaoshengrongxianNonequilibrium feipinghengNonrolatile feihuifa（yishi）xingNormally off/on changbi/kaiNumerical analysis shuzhifenxiOOccupied band mandaiOfficienay gonglvOffset pianyi、shidiaoOn standby daimingzhuangtaiOhmic contact oumujiechuOpen circuit kailuOperating point gongzuodianOperating bias gongzuopianzhiOperational amplifier (OPAMP)yunsuanfangdaqiOptical photon =photon guangziOptical quenchingguangzuomieOptical transition guangyueqianOptical-coupled isolatorguangzuohegeliqiOrganic semiconductoryoujibandaotiOrientation jingxiang、dingxiangOutline waixingOut-of-contact maskfeijiechushiyanmoOutput characteristic shuchutexingOutput voltage swing shuchudianyabaifuOvercompensation guobuchangOver-current protection guoliubaohuOver shoot guochongOver-voltage protection guoyabaohuOverlap jiaodieOverload guozaiOscillator zhendangqiOxide yanghuawuOxidation yanghuaOxide passivation yanghuacengdunhuaPPackage fengzhuangPad yahandianParameter canshuParasitic effect jishengxiaoyingParasitic oscillation jishengzhendangPassination dunhuaPassive component wuyuanyuanjianPassive device wuyuanqijianPassive surface dunhuajiemianParasitic transistor jishengjingtiguanPeak-point voltage fengdiandianyaPeak voltage fengzhidianyaPermanent-storage circuit yongjiucunchudianluPeriod zhouqiPeriodic table zhouqibiaoPermeable - base keshentoujiquPhase-lock loop suoxianghuanPhase drift xiangyiPhonon spectra shengzipuPhoto conduction guangdiandaoPhoto diode guangdianerjiguanPhotoelectric cell guangdianchiPhotoelectric effect guangdianxiaoyingPhotoenic devices guangziqijianPhotolithographic process guangkegongyi(photo) resist （guangmin）kangfushijiPin guanjiaoPinch off jiaduanPinning of Fermi level feiminengjidedingzha（xiaoying）Planar process pingmiangongyiPlanar transistor pingmianjingtiguanPlasma denglizitiPlezoelectric effect yadianxiaoyingPoisson equation bosongfangchengPoint contact dianjiechuPolarity jixingPolycrystal duojingPolymer semiconductorjuhewubandaotiPoly-silicon duojingguiPotential (dian)shiPotential barrier shileiPotential well shizuoPower dissipation gonghaoPower transistor gonglvjingtiguanPreamplifier qianzhifangdaqiPrimary flat zhupingmianPrincipal axes zhuzhouPrint-circuit board(PCB) yinzhidianlubanProbability jilvProbe tanzhenProcess gongyiPropagation delay chuanshuyanshiPseudopotential method zuoshifaPunch through chuantongPulse triggering/modulating maichongchufa/diaozhiPulseWiden Modulator(PWM) maichongkuandudiaozhiPunchthrough chuantongPush-pull stage tuiwanjiQQuality factor pinzhiyinziQuantization liangzihuaQuantum liangziQuantum efficiencyliangzixiaoyingQuantum mechanics liangzilixueQuasi – Fermi－levelzhunfeiminengjiQuartz shiyingRRadiation conductivity fushediandaolvRadiation damage fushesunshangRadiation flux density fushetongliangmiduRadiation hardening fushejiaguRadiation protection fushebaohuRadiative - recombinationfuzhaofuheRadioactive fangshexingReach through chuantongReactive sputtering source fanyingjiansheyuanRead diode lideerjiguanRecombination fuheRecovery diode huifuerjiguanReciprocal lattice daoheziRecovery time huifushijianRectifier zhengliuqi（guan）Rectifying contact zhengliujiechuReference jizhundian jizhun cankaodianRefractive index zheshelvRegister jicunqiRegistration duizhunRegulate kongzhi diaozhengRelaxation lifetime chiyushijianReliability kekaoxingResonance xiezhenResistance dianzuResistor dianzuqiResistivity dianzulvRegulator wenyaguan（qi）Relaxation chiyuResonant frequencygongshepinlvResponse time xiangyingshijianReverse fanxiangdeReverse bias fanxiangpianzhiSSampling circuit quyangdianluSapphire lanbaoshi（Al2O3）Satellite valley weixingguSaturated current rangedianliubaohequSaturation region baohequSaturation baohedeScaled down anbilisuoxiaoScattering sansheSchockley diode xiaokelaierjiguanSchottky xiaotejiSchottky barrier xiaotejishileiSchottky contact xiaotejijiechuSchrodingen xuedingeScribing grid huapiangeSecondary flat cipingmianSeed crystal zijingSegregation fenningSelectivity xuanzexingSelf aligned ziduizhundeSelf diffusion zikuosanSemiconductor bandaotiSemiconductor-controlled rectifier kekongguiSendsitivity lingminduSerial chuanxing/chuanlianSeries inductance chuanliandianganSettle time jianlishijianSheet resistance baocengdianzuShield pingbiShort circuit duanluShot noise sanlizaoshengShunt fenliuSidewall capacitancebianqiangdianrong Signal xinhaoSilica glass shiyingboliSilicon guiSilicon carbide tanhuaguiSilicon dioxide (SiO2) eryanghuaguiSilicon Nitride(Si3N4) danhuaguiSilicon On Insulator jueyuanguiSiliver whiskers yinxuSimple cubic jianlifangSingle crystal danjingSink chenSkin effect qufuxiaoyingSnap time jibianshijianSneak path qianxingtongluSulethreshold yazuodeSolar battery/cell taiyangnengdianchiSolid circuit gutidianluSolid Solubility gurongduSonband zidaiSource yuanjiSource follower yuansuiqiSpace charge kongjiandianheSpecific heat(PT) reSpeed-power product sudugonghaochengji Spherical qiumiandeSpin zixuan Split fenlieSpontaneous emission zifafasheSpreading resistancekuozhandianzuSputter jianshe Stacking fault cengcuoStatic characteristic jingtaitexingStimulated emission shoujifasheStimulated recombination shoujifuheStorage time cunchushijianStress yingliStraggle pianchaSublimation shenghuaSubstrate chendiSubstitutional tiweishideSuperlattice chaojinggeSupply dianyuan Surface biaomianSurge capacity langyongnengliSubscript xiabiaoSwitching time kaiguanshijianSwitch kaiguanTTailing kuozhanTerminal zhongduanTensor zhangliang Tensorial zhangliangdeThermal activation rejifaThermal conductivity redaolvThermal equilibrium repinghengThermal Oxidation reyanghuaThermal resistance rezuThermal sink rechenThermal velocity reyundongThermoelectricpovoer wenchadiandongshilvThick-film technique houmojishuThin-film hybrid ICbaomohunhejichengdianluThin-Film Transistor(TFT) baomojingtiThreshlod zuozhiThyistor jingzhaguanTransconductance kuadaoTransfer characteristic zhuanyitexingTransfer electron zhuanyidianziTransfer function chuanshuhanshu Transient shuntaideTransistor aging(stress) jingtiguanlaohuaTransit time duyueshijianTransition yueqianTransition-metal silica guodujinshuguihuawuTransition probability yueqianjilvTransition region guoduquTransport shuyun Transverse hengxiangdeTrap xianzuo Trapping fuhuoTrapped charge xianzuodianheTriangle generator sanjiaobofashengqiTriboelectricity mobadianTrigger chufaTrim diaopei diaozhengTriple diffusion sanzhongkuosanTruth table zhenzhibiaoTolerahce rongchaTunnel(ing) suidao（chuan）Tunnel current suidaodianliuTurn over zhuanzheTurn - off time guanduanshijianUUltraviolet ziwaideUnijunction danjiedeUnipolar danjideUnit cell yuan（yuan）baoUnity-gain frequency danweizengyipinlvUnilateral-switchdanxiangkaiguanVVacancy kongwei Vacuum zhenkongValence(value) band jiadai Value band edge jiadaidingValence bond jiajian Vapour phase qixiangVaractor bianrongguan Varistor bianzuqiVibration zhendong Voltage dianyaWWafer jingpianWave equation bodongfangchengWave guide bodaoWave number boshuWave-particle duality bolierxiangxingWear-out shaohuiWire routing buxianWork function gonghanshuWorst-case device zuihuaiqingkuangqijianYYield chengpinlvZZener breakdown qinajichuanZone melting qurongfaganenzanshang，weizhongguoxinjiayou！dajiazenmekan？kuailailiuyanjiaoliuba^_^ruqinshanzuoruzhuanzhu【yuanchuangbuyi，jidezhuanfa】bandaotirenlinzoujidedianxiafangmuzhiliuxiajiaoyin。rujuewenzhangbucuo，liuyanpinglun，zhuanfagengduopengyou，chuandizanbandaotirendeguandian。zhinengtuijian：80yePPTkandongbandaotixingyeyikexinpian，zhajiuzhemenanzao？ |zhuanfengliaozhongguobandaotikunjing！zhepianjiangquanliao！zhongguoxinsuanwangshi！|dailaobanzhicaijinhuabeihou：zhongguoshangweizhangkongdehexinjishuqingdanfulixiazai：dianzijishuquantaoziliao，gongchengshibikan！zhicaijinhuabeihou：zhongguoshangweizhangkongdehexinjishuqingdan！zhekenengshizuiquande，zhongguoshangweizhangkongdehexinjishuqingdan（xin bangzhongguobandaotipaixingbang！ tian jiaxin pian quanxinpianbandaotirendequanzi！tian jiaqukuailianshouxiqukuailiancongrumendaojingtong。zaizheli，biedazhao！tian jia1xin jududongbandaoti，kandongxinpian！tian jia1gezan，gongzilaobanjia1yuanbenciluntanxianchang。zhubanfanggongtu
到(顿补辞)达(顿补)现(齿颈补苍)场(颁丑补苍驳)后(贬辞耻)消(齿颈补辞)防(贵补苍驳)员(驰耻补苍)发(贵补)现(齿颈补苍)
蹿补诲辞苍驳箩颈诲耻驳补颈锄丑颈锄耻辞。测耻蝉丑别苍驳，产耻锄丑耻颈辩颈耻，产耻锄补颈丑耻，蝉耻颈测耻别谤补苍，锄颈诲别辩颈濒别。
乌(奥耻)鸦(驰补)女(狈惫)士(厂丑颈)听(罢颈苍驳)后(贬辞耻)，十(厂丑颈)分(贵别苍)惊(闯颈苍驳)慌(贬耻补苍驳)，急(闯颈)忙(惭补苍驳)飞(贵别颈)走(窜辞耻)了(尝颈补辞)。狐(贬耻)狸(尝颈)赶(骋补苍)忙(惭补苍驳)叫(闯颈补辞)来(尝补颈)同(罢辞苍驳)伙(贬耻辞)猫(惭补辞)女(狈惫)士(厂丑颈)，猫(惭补辞)女(狈惫)士(厂丑颈)飞(贵别颈)快(碍耻补颈)爬(笔补)上(厂丑补苍驳)大(顿补)树(厂丑耻)，寻(齿耻苍)找(窜丑补辞)那(狈补)块(碍耻补颈)鲜(齿颈补苍)美(惭别颈)的(顿别)肉(搁辞耻)。
然而，赫什绝非第一个怀疑美国炸毁了“北溪”管道的人。怪不得，夜里我给炉子填煤，几次起来上外面铲煤，看见婶子屋里的灯一直亮着。因为要省电，他们屋一般没有特殊事情早早就关灯了。这么晚还不熄灯？我当时还挺纳闷的，岂不知道婶子一夜没睡，是在给我们—个租住在自己家隔壁房子的“盲流”孩子做棉袄呢！aqdav.com子域名大全 aqdav.com二级域名 aqdav.com...
网红圈里的纪律委员李雨禅也来凑了回热闹这次他站队白冰